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    Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Supplier Device Package Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
    BSC024NE2LSATMA1 BSC024NE2LSATMA1 Infineon Technologies $0.00
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    		 download 26 Weeks Surface Mount Tape & Reel (TR) 2011 OptiMOS™ no Active 1 (Unlimited) 5 EAR99 ROHS3 Compliant Contains Lead 8 8-PowerTDFN No SVHC not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) DUAL FLAT NOT SPECIFIED NOT SPECIFIED 8 R-PDSO-F5 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 4.1 ns 2V 25V 2.5W Ta 48W Tc 25A SWITCHING 0.0034Ohm 19 ns SILICON N-Channel 2.4m Ω @ 30A, 10V 2V @ 250μA 1700pF @ 12V 23nC @ 10V 3.6ns 2.6 ns 20V 25A Ta 100A Tc 400A 40 mJ 4.5V 10V ±20V
    IPB081N06L3GATMA1 IPB081N06L3GATMA1 Infineon Technologies $0.00
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    		 download 13 Weeks Surface Mount Tape & Reel (TR) 2008 OptiMOS™ no Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead 3 LOGIC LEVEL COMPATIBLE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 79W 15 ns 1.7V 60V 79W Tc 50A SWITCHING 37 ns SILICON N-Channel 8.1m Ω @ 50A, 10V 2.2V @ 34μA 4900pF @ 30V 29nC @ 4.5V 26ns 7 ns 20V 50A Tc 200A 4.5V 10V ±20V
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2002 HEXFET® Active 1 (Unlimited) 2 SMD/SMT EAR99 10.668mm ROHS3 Compliant Contains Lead, Lead Free Tin 82A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.826mm 9.65mm Surface Mount -55°C~175°C TJ 75V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 170W 13 ns 4V 230W Tc 150 ns 82A SWITCHING 49 ns SILICON N-Channel 13m Ω @ 43A, 10V 4V @ 250μA 3820pF @ 25V 160nC @ 10V 64ns 48 ns 20V 75V 75V 4 V 75A 82A Tc 280A 10V ±20V
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    		 download 18 Weeks Surface Mount Tape & Reel (TR) 2011 OptiMOS™ yes Active 3 (168 Hours) 8 EAR99 ROHS3 Compliant Lead Free Tin 8 8-SOIC (0.154, 3.90mm Width) Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 DUAL GULL WING NOT SPECIFIED NOT SPECIFIED 8 Not Qualified 1 SINGLE WITH BUILT-IN DIODE Halogen Free 1.6W -30V 1.6W Ta 14.8A SWITCHING SILICON P-Channel 8m Ω @ 14.8A, 10V 3.1V @ 150μA 6750pF @ 15V 81nC @ 10V 47ns 25V 12A Ta 30V 6V 10V ±25V
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    		 download 12 Weeks Tape & Reel (TR) 2004 HEXFET® Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 Other Transistors Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 57W Tc SWITCHING 0.11Ohm 55V SILICON P-Channel 110m Ω @ 9.6A, 10V 4V @ 250μA 650pF @ 25V 32nC @ 10V 18A 18A Tc 55V 64A 150 mJ 10V ±20V
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    		 download 12 Weeks Tape & Reel (TR) 2004 HEXFET® Not For New Designs 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, ULTRA-LOW RESISTANCE TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 68W Tc SWITCHING 0.045Ohm 55V SILICON N-Channel 45m Ω @ 16A, 10V 4V @ 250μA 700pF @ 25V 34nC @ 10V 20A 27A Tc 55V 100A 65 mJ 10V ±20V
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 1999 Automotive, AEC-Q101, OptiMOS™ Active 1 (Unlimited) 175°C -55°C ROHS3 Compliant Lead Free 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount 3.949996g -55°C~175°C TJ MOSFET (Metal Oxide) 1 Halogen Free 9 ns 60V PG-TO252-3-11 71W Tc 50A 45 ns N-Channel 7.8mOhm @ 50A, 10V 2.2V @ 35μA 4780pF @ 25V 64nC @ 10V 2ns 8 ns 16V 50A Tc 60V 4.78nF 4.5V 10V ±16V 7.8 mΩ
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    		 download 10 Weeks Tape & Reel (TR) 2004 HEXFET® Not For New Designs 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 110W Tc SWITCHING 0.0135Ohm 55V SILICON N-Channel 13.5m Ω @ 36A, 10V 3V @ 250μA 1570pF @ 25V 35nC @ 5V 42A 42A Tc 55V 240A 85 mJ 4.5V 10V ±16V
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2004 HEXFET® Active 1 (Unlimited) 2 EAR99 6.7056mm ROHS3 Compliant Lead Free No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-252-3, DPak (2 Leads + Tab), SC-63 2.26mm 6.22mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 TO-252AA DRAIN Single 91W 14 ns 91W Tc 35A SWITCHING 0.0285Ohm 43 ns SILICON N-Channel 28.5m Ω @ 21A, 10V 4V @ 50μA 1690pF @ 25V 59nC @ 10V 42ns 34 ns 20V 100V 35A Tc 140A 10V ±20V
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    		 download 18 Weeks 2013 yes Active 3 (168 Hours) EAR99 150°C -55°C ROHS3 Compliant Contains Lead not_compliant e3 Tin (Sn) Halogen Free 650V 650V
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2004 HEXFET® Not For New Designs 1 (Unlimited) 2 ROHS3 Compliant Lead Free No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 2.2Ohm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING R-PSSO-G2 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 78W 14 ns 78W Tc 3.6A SWITCHING 24 ns SILICON N-Channel 2.2 Ω @ 2.2A, 10V 5V @ 250μA 810pF @ 25V 20nC @ 10V 22ns 17 ns 20V 500V 3.6A Tc 10V ±20V
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    		 download 12 Weeks Tape & Reel (TR) 2004 HEXFET® Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 48W Tc SWITCHING 0.225Ohm 100V SILICON N-Channel 185m Ω @ 6A, 10V 2V @ 250μA 440pF @ 25V 20nC @ 5V 10A 10A Tc 100V 35A 85 mJ 4V 10V ±16V
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    		 download 26 Weeks Surface Mount Tape & Reel (TR) 2013 OptiMOS™ Active 3 (168 Hours) 3 EAR99 ROHS3 Compliant 3 3-WDSON Surface Mount -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.95 e4 Silver/Nickel (Ag/Ni) BOTTOM NO LEAD NOT SPECIFIED NOT SPECIFIED 1 SINGLE WITH BUILT-IN DIODE DRAIN 2.2W Ta 28W Tc 69A SWITCHING 0.0046Ohm SILICON N-Channel 3.5m Ω @ 30A, 10V 2V @ 250μA 1862pF @ 12V 25nC @ 10V 25V 22A 22A Ta 69A Tc 276A 50 mJ 4.5V 10V ±20V
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    		 download 10 Weeks Tape & Reel (TR) 2006 OptiMOS™ yes Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE DRAIN 68W Tc 0.04Ohm 55V SILICON N-Channel 40m Ω @ 13A, 10V 4V @ 26μA 513pF @ 25V 18nC @ 10V 29A 29A Tc 55V 116A 80 mJ 10V ±20V
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2004 HEXFET® Active 1 (Unlimited) 5 EAR99 ROHS3 Compliant No 8 8-PowerTDFN Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL FLAT R-PDSO-F5 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.6W 12 ns 3.6W Ta 54W Tc 21A SWITCHING 0.005Ohm 14 ns SILICON N-Channel 5m Ω @ 20A, 10V 2.35V @ 50μA 2487pF @ 10V 32nC @ 10V 16ns 7.1 ns 20V 30V 21A Ta 82A Tc 94 mJ 4.5V 10V ±20V
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    		 download 18 Weeks Tube 2014 CoolMOS™ P7 Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-220-3 Full Pack Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSFM-T3 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED 30W Tc SWITCHING 0.36Ohm 800V SILICON N-Channel 360m Ω @ 5.6A, 10V 3.5V @ 280μA 930pF @ 500V 30nC @ 10V 13A Tc 800V 34A 34 mJ 10V ±20V
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    		 download 18 Weeks Tube 2017 CoolMOS™ P7 yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-247-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSFM-T3 1 SINGLE WITH BUILT-IN DIODE 72W Tc SWITCHING 0.18Ohm 600V SILICON N-Channel 180m Ω @ 5.6A, 10V 4V @ 280μA 1081pF @ 400V 25nC @ 10V 18A Tc 650V 53A 56 mJ 10V ±20V
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    		 download 13 Weeks Tube 2008 OptiMOS™ no Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Contains Lead TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.95 e3 Tin (Sn) NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 1 TO-220AB Halogen Free Single 107W 60V 3W Ta 107W Tc 80A SWITCHING 0.004Ohm 30 ns SILICON N-Channel 4m Ω @ 80A, 10V 2.8V @ 50μA 2700pF @ 30V 38nC @ 10V 16ns 9 ns 20V 60V 20A 20A Ta 80A Tc 320A 70 mJ 6V 10V ±20V
    SPW24N60C3FKSA1 SPW24N60C3FKSA1 Infineon Technologies $0.00
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    		 download Tube 2005 CoolMOS™ yes Not For New Designs 1 (Unlimited) 3 16.03mm ROHS3 Compliant Lead Free 24.3A 3 AVALANCHE RATED TO-247-3 No SVHC 21.1mm 5.16mm Through Hole -55°C~150°C TJ 650V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) NOT SPECIFIED NOT SPECIFIED 3 NO Not Qualified 1 Single 240W 13 ns 3V 240W Tc 24.3A SWITCHING 0.16Ohm 140 ns SILICON N-Channel 160m Ω @ 15.4A, 10V 3.9V @ 1.2mA 3000pF @ 25V 135nC @ 10V 21ns 14 ns 20V 650V 24.3A Tc 72.9A 780 mJ 10V ±20V
    IPB034N03LGATMA1 IPB034N03LGATMA1 Infineon Technologies $0.00
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    		 download 13 Weeks Surface Mount Tape & Reel (TR) 2008 OptiMOS™ no Not For New Designs 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead 3 AVALANCHE RATED, LOGIC LEVEL COMPATIBLE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 94W 9.2 ns 30V 94W Tc 80A SWITCHING 0.0047Ohm 35 ns SILICON N-Channel 3.4m Ω @ 30A, 10V 2.2V @ 250μA 5300pF @ 15V 51nC @ 10V 6.4ns 5.4 ns 20V 80A Tc 400A 70 mJ 4.5V 10V ±20V
    IPA60R400CEXKSA1 IPA60R400CEXKSA1 Infineon Technologies $0.00
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    		 download 18 Weeks Through Hole Tube 2008 CoolMOS™ CE yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 3 TO-220-3 Full Pack Through Hole 6.000006g -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 1 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED Halogen Free 11 ns 600V 31W Tc 10.3A SWITCHING 0.4Ohm 56 ns SILICON N-Channel 400m Ω @ 3.8A, 10V 3.5V @ 300μA 700pF @ 100V 32nC @ 10V 9ns 8 ns 20V 600V 10.3A Tc 10V ±20V
    BSZ100N03MSGATMA1 BSZ100N03MSGATMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Surface Mount Tape & Reel (TR) 2005 OptiMOS™ no Active 1 (Unlimited) 5 EAR99 ROHS3 Compliant Contains Lead Tin 8 8-PowerTDFN No SVHC not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 DUAL NO LEAD NOT SPECIFIED NOT SPECIFIED 8 S-PDSO-N5 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 2.1W 2V 30V 2.1W Ta 30W Tc 40A SWITCHING SILICON N-Channel 9.1m Ω @ 20A, 10V 2V @ 250μA 1700pF @ 15V 23nC @ 10V 2.8ns 16V 10A Ta 40A Tc 4.5V 10V ±20V
    IRLR2705TRLPBF IRLR2705TRLPBF Infineon Technologies $0.00
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    		 download 12 Weeks Tape & Reel (TR) 2005 HEXFET® Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant LOGIC LEVEL COMPATIBLE, AVALANCHE RATED TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 68W Tc SWITCHING 0.051Ohm 55V SILICON N-Channel 40m Ω @ 17A, 10V 2V @ 250μA 880pF @ 25V 25nC @ 5V 28A 28A Tc 55V 110A 110 mJ 4V 10V ±16V
    IRFH8324TRPBF IRFH8324TRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2012 HEXFET® Active 1 (Unlimited) 5 EAR99 ROHS3 Compliant No 8 HIGH RELIABILITY 8-PowerTDFN No SVHC Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL FLAT R-PDSO-F5 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.6W 13 ns 3.6W Ta 54W Tc 23A SWITCHING 14 ns SILICON N-Channel 4.1m Ω @ 20A, 10V 2.35V @ 50μA 2380pF @ 10V 31nC @ 10V 26ns 8.5 ns 20V 30V 1.8 V 50A 23A Ta 90A Tc 200A 94 mJ 4.5V 10V ±20V
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    		 download 12 Weeks Through Hole Tube 2010 HEXFET® Not For New Designs 1 (Unlimited) 3 EAR99 6.7056mm ROHS3 Compliant Lead Free 30A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-251-3 Short Leads, IPak, TO-251AA No SVHC 6.22mm 2.3876mm 14mOhm Through Hole -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier 260 30 FET General Purpose Power 1 DRAIN Single 120W 7.4 ns 3V 120W Tc 61A SWITCHING 83 ns SILICON N-Channel 14m Ω @ 30A, 10V 3V @ 250μA 1870pF @ 25V 92nC @ 10V 51ns 100 ns 16V 55V 55V 3 V 30A Tc 240A 200 mJ 5V 10V ±16V
    IRFR1010ZTRPBF IRFR1010ZTRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2010 HEXFET® Active 1 (Unlimited) 2 EAR99 6.7056mm ROHS3 Compliant Lead Free No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-252-3, DPak (2 Leads + Tab), SC-63 2.3876mm 6.22mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 140W 17 ns 140W Tc 91A SWITCHING 0.0075Ohm 42 ns SILICON N-Channel 7.5m Ω @ 42A, 10V 4V @ 100μA 2840pF @ 25V 95nC @ 10V 76ns 48 ns 20V 55V 42A 42A Tc 220 mJ 10V ±20V
    IRF7495TRPBF IRF7495TRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2004 HEXFET® Active 1 (Unlimited) 8 SMD/SMT EAR99 4.9784mm ROHS3 Compliant Contains Lead, Lead Free 7.3A No 8 8-SOIC (0.154, 3.90mm Width) No SVHC 1.4986mm 3.9878mm 22MOhm Surface Mount -55°C~150°C TJ 100V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING 260 30 FET General Purpose Power 1 Single 2.5W 8.7 ns 4V 2.5W Ta 7.3A SWITCHING 10 ns SILICON N-Channel 22m Ω @ 4.4A, 10V 4V @ 250μA 1530pF @ 25V 51nC @ 10V 13ns 36 ns 20V 100V 100V 4 V 7.3A Ta 10V ±20V
    IPD60R600E6ATMA1 IPD60R600E6ATMA1 Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Bulk 2008 CoolMOS™ E6 Not For New Designs 1 (Unlimited) 2 -55°C ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE DRAIN 600V 63W Tc SWITCHING 0.6Ohm N-Channel 600m Ω @ 2.4A, 10V 3.5V @ 200μA 440pF @ 100V 20.5nC @ 10V 7.3A Tc 19A 133 mJ 10V ±20V
    AUIRLR120NTRL AUIRLR120NTRL Infineon Technologies $0.00
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    		 download 16 Weeks Tape & Reel (TR) 2015 HEXFET® Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 48W Tc SWITCHING 0.225Ohm 100V SILICON N-Channel 185m Ω @ 6A, 10V 2V @ 250μA 440pF @ 25V 20nC @ 5V 10A 10A Tc 100V 35A 85 mJ 4V 10V ±16V
    IRFR2407TRLPBF IRFR2407TRLPBF Infineon Technologies $0.00
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    		 download 12 Weeks Tape & Reel (TR) 2000 HEXFET® Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 110W Tc SWITCHING 0.026Ohm 75V SILICON N-Channel 26m Ω @ 25A, 10V 4V @ 250μA 2400pF @ 25V 110nC @ 10V 30A 42A Tc 75V 170A 130 mJ 10V ±20V