Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Voltage - Rated | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Max Supply Voltage | REACH SVHC | Reach Compliance Code | Lead Pitch | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Size / Dimension | Voltage - Rated DC | Technology | Operating Mode | Manufacturer Package Identifier | HTS Code | Number of Functions | Nominal Supply Current | Type | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Supply Voltage-Max (Vsup) | Reference Standard | Number of Elements | Configuration | JEDEC-95 Code | Number of Outputs | Output Current | Voltage - Output | Max Output Current | Case Connection | Halogen Free | Output Current per Channel | Attenuation Value | Applications | Element Configuration | Current - Output | Power Dissipation | Turn On Delay Time | Interface IC Type | Driver Number of Bits | Built-in Protections | ESD Protection | Threshold Voltage | Output Current Flow Direction | Max Dual Supply Voltage | Drain to Source Resistance | Supplier Device Package | Power Dissipation-Max | Recovery Time | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Turn-Off Delay Time | High Level Output Current | Low Level Output Current | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | FET Feature | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Feedback Cap-Max (Crss) | Input Capacitance | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Rds On Max | Number of Segments | Turn On Time | Filter Order | Values | Resistance - Channel (Ω) | Center / Cutoff Frequency | Output Peak Current Limit-Nom | Multiplexed Display Capability |
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IRLR3105TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | 6.7056mm | ROHS3 Compliant | Lead Free | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.3876mm | 6.22mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | TO-252AA | DRAIN | Single | 57W | 8 ns | 57W Tc | 25A | SWITCHING | 25 ns | SILICON | N-Channel | 37m Ω @ 15A, 10V | 3V @ 250μA | 710pF @ 25V | 20nC @ 5V | 57ns | 37 ns | 16V | 55V | 25A Tc | 100A | 61 mJ | 5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSC039N06NSATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Cut Tape (CT) | 2012 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | not_compliant | 1.1mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | 8 | R-PDSO-F5 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 2.5W | 12 ns | 2.1V | 60V | 2.5W Ta 69W Tc | 100A | 150°C | SWITCHING | 0.0039Ohm | 20 ns | SILICON | N-Channel | 3.9m Ω @ 50A, 10V | 2.8V @ 36μA | 2000pF @ 30V | 27nC @ 10V | 12ns | 7 ns | 20V | 60V | 19A Ta 100A Tc | 400A | 50 mJ | 44 pF | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFH5250TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 19 Weeks | Surface Mount | Tape & Reel (TR) | 2005 | HEXFET® | Active | 1 (Unlimited) | 5 | EAR99 | 5.9944mm | ROHS3 Compliant | Lead Free | 8 | HIGH RELIABILITY | 8-PowerVDFN | No SVHC | 838.2μm | 5mm | 1.75MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | NO LEAD | 260 | 30 | R-PDSO-N5 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 3.6W | 28 ns | 1.8V | 3.6W Ta 160W Tc | 100A | SWITCHING | 30 ns | SILICON | N-Channel | 1.15m Ω @ 50A, 10V | 2.35V @ 150μA | 7174pF @ 13V | 110nC @ 10V | 46ns | 19 ns | 20V | 25V | 1.8 V | 45A | 45A Ta 100A Tc | 400A | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF530NPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2001 | HEXFET® | Active | 1 (Unlimited) | 3 | Through Hole | EAR99 | 10.5156mm | ROHS3 Compliant | Lead Free | Tin | 17A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY | TO-220-3 | No SVHC | 2.54mm | 8.77mm | 4.69mm | 90MOhm | Through Hole | -55°C~175°C TJ | 100V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | 250 | 30 | FET General Purpose Power | 1 | TO-220AB | DRAIN | Single | 70W | 9.2 ns | 70W Tc | 140 ns | 17A | SWITCHING | 35 ns | SILICON | N-Channel | 90m Ω @ 9A, 10V | 4V @ 250μA | 920pF @ 25V | 37nC @ 10V | 22ns | 25 ns | 20V | 100V | 100V | 4 V | 17A Tc | 60A | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFZ44NPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2001 | HEXFET® | Active | 1 (Unlimited) | 3 | Through Hole | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | Tin | 49A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | TO-220-3 | No SVHC | 2.54mm | 8.77mm | 4.826mm | 17.5MOhm | Through Hole | -55°C~175°C TJ | 55V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | 250 | 30 | FET General Purpose Power | 1 | TO-220AB | DRAIN | Single | 83W | 12 ns | 2.1V | 94W Tc | 95 ns | 49A | SWITCHING | 44 ns | SILICON | N-Channel | 17.5m Ω @ 25A, 10V | 4V @ 250μA | 1470pF @ 25V | 63nC @ 10V | 60ns | 45 ns | 20V | 55V | 55V | 2.1 V | 49A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF7842TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 8 | SMD/SMT | EAR99 | 4.9784mm | ROHS3 Compliant | Contains Lead, Lead Free | Tin | 18A | No | 8 | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.75mm | 3.9878mm | 5MOhm | Surface Mount | -55°C~150°C TJ | 40V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | GULL WING | 1 | FET General Purpose Power | 1 | 2.5A | Single | 2.5W | 14 ns | 2.25V | 2.5W Ta | 150 ns | 18A | 150°C | SWITCHING | 21 ns | SILICON | N-Channel | 5m Ω @ 17A, 10V | 2.25V @ 250μA | 4500pF @ 20V | 50nC @ 4.5V | 12ns | 5 ns | 20V | 40V | 40V | 2.25 V | 18A Ta | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF4905STRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 1997 | HEXFET® | Active | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 10.54mm | ROHS3 Compliant | Contains Lead | Tin | -74A | No | 3 | HIGH RELIABILITY, AVALANCHE RATED | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.83mm | 10.54mm | 20mOhm | Surface Mount | -55°C~150°C TJ | -55V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | D2Pak | e3 | GULL WING | 260 | 30 | R-PSSO-G2 | 1 | Other Transistors | 1 | DRAIN | Single | 3.8W | 20 ns | -2V | 170W Tc | 92 ns | -42A | 150°C | SWITCHING | 51 ns | SILICON | P-Channel | 20m Ω @ 42A, 10V | 4V @ 250μA | 3500pF @ 25V | 180nC @ 10V | 99ns | 64 ns | 20V | -55V | -55V | -4 V | 42A Tc | 55V | 280A | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF5210STRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 1998 | HEXFET® | Active | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 10.668mm | ROHS3 Compliant | Contains Lead | Tin | -40A | No | 3 | HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.83mm | 9.65mm | 60mOhm | Surface Mount | -55°C~150°C TJ | -100V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-PSSO-G2 | 1 | Other Transistors | 1 | DRAIN | Single | 3.8W | 14 ns | -4V | 3.1W Ta 170W Tc | 260 ns | -40A | 150°C | SWITCHING | 72 ns | SILICON | P-Channel | 60m Ω @ 38A, 10V | 4V @ 250μA | 2780pF @ 25V | 230nC @ 10V | 63ns | 55 ns | 20V | -100V | 100V | -4 V | 38A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFS4010TRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.826mm | 9.65mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 375W | 21 ns | 375W Tc | 180A | SWITCHING | 0.0047Ohm | 100 ns | SILICON | N-Channel | 4.7m Ω @ 106A, 10V | 4V @ 250μA | 9575pF @ 50V | 215nC @ 10V | 86ns | 77 ns | 20V | 100V | 4 V | 180A Tc | 720A | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPN80R900P7ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tape & Reel (TR) | 2014 | CoolMOS™ P7 | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-261-3 | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PDSO-G3 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 7W Tc | SWITCHING | 0.9Ohm | 800V | SILICON | N-Channel | 900m Ω @ 2.2A, 10V | 3.5V @ 110μA | 350pF @ 500V | 15nC @ 10V | 6A Tc | 800V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AUIRF7640S2TR | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Lead Free | No | 6 | DirectFET™ Isometric SB | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | BOTTOM | R-XBCC-N2 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 30W | 4 ns | 2.4W Ta 30W Tc | 5.8A | SWITCHING | 6.3 ns | SILICON | N-Channel | 36m Ω @ 13A, 10V | 5V @ 25μA | 450pF @ 25V | 11nC @ 10V | 12ns | 6.2 ns | 20V | 60V | 77A | 5.8A Ta 21A Tc | 84A | 57 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSO033N03MSGXUMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | OptiMOS™ | Active | 3 (168 Hours) | 8 | EAR99 | ROHS3 Compliant | Lead Free | Tin | 8 | 8-SOIC (0.154, 3.90mm Width) | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | SINGLE WITH BUILT-IN DIODE | Halogen Free | 1.56W | 30V | 1.56W Ta | 17A | SWITCHING | 0.0033Ohm | SILICON | N-Channel | 3.3m Ω @ 22A, 10V | 2V @ 250μA | 9600pF @ 15V | 124nC @ 10V | 12.8ns | 20V | 17A Ta | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPD25CN10NGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | OptiMOS™ | yes | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 71W | 10 ns | 100V | 71W Tc | 35A | SWITCHING | 0.025Ohm | 13 ns | SILICON | N-Channel | 25m Ω @ 35A, 10V | 4V @ 39μA | 2070pF @ 50V | 31nC @ 10V | 4ns | 3 ns | 20V | 35A Tc | 140A | 65 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPD60R600P6ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | CoolMOS™ P6 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 6.73mm | ROHS3 Compliant | Lead Free | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | not_compliant | 2.41mm | 6.22mm | Surface Mount | 3.949996g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | 1 | DRAIN | Not Halogen Free | Single | 11 ns | 4V | 600V | 63W Tc | 7.3A | SWITCHING | 0.6Ohm | 33 ns | SILICON | N-Channel | 600m Ω @ 2.4A, 10V | 4.5V @ 200μA | 557pF @ 100V | 12nC @ 10V | 30V | 7.3A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFH7440TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | HEXFET®, StrongIRFET™ | Active | 1 (Unlimited) | EAR99 | 5.85mm | ROHS3 Compliant | Lead Free | No | 8 | 8-PowerTDFN | No SVHC | 1.05mm | 5mm | 2.4MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | 1 | FET General Purpose Power | Single | 104W | 12 ns | 2.2V | 104W Tc | 85A | 150°C | 53 ns | N-Channel | 2.4m Ω @ 50A, 10V | 3.9V @ 100μA | 4574pF @ 25V | 138nC @ 10V | 45ns | 42 ns | 20V | 40V | 85A Tc | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SPD04N50C3ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Surface Mount | Tape & Reel (TR) | 2005 | CoolMOS™ | Not For New Designs | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 4.5A | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~150°C TJ | 560V | MOSFET (Metal Oxide) | 1 | 50W | 10 ns | 500V | 850mOhm | PG-TO252-3-1 | 50W Tc | 4.5A | 70 ns | N-Channel | 950mOhm @ 2.8A, 10V | 3.9V @ 200μA | 470pF @ 25V | 22nC @ 10V | 5ns | 20V | 4.5A Tc | 500V | 470pF | 10V | ±20V | 950 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPD30N03S2L20ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | OptiMOS™ | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | LOGIC LEVEL COMPATIBLE | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 60W | 5 ns | 30V | 60W Tc | 30A | SWITCHING | 19 ns | SILICON | N-Channel | 20m Ω @ 18A, 10V | 2V @ 23μA | 530pF @ 25V | 19nC @ 10V | 15ns | 10 ns | 20V | 30A Tc | 70 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF8734TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | HEXFET® | Active | 1 (Unlimited) | 8 | EAR99 | ROHS3 Compliant | Lead Free | No | 8 | 8-SOIC (0.154, 3.90mm Width) | 1.4986mm | 3.9878mm | 3.5MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | 2.5W | 13 ns | 2.5W Ta | 21A | SWITCHING | 15 ns | SILICON | N-Channel | 3.5m Ω @ 21A, 10V | 2.35V @ 50μA | 3175pF @ 15V | 30nC @ 4.5V | 16ns | 8 ns | 20V | 30V | 21A Ta | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPD70N03S4L04ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | OptiMOS™ | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | ULTRA LOW RESISTANCE | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | AEC-Q101 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 3 ns | 30V | 68W Tc | 30A | 12 ns | SILICON | N-Channel | 4.3m Ω @ 70A, 10V | 2.2V @ 30μA | 3300pF @ 25V | 48nC @ 10V | 2ns | 16V | 70A | 70A Tc | 280A | 57 mJ | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPD65R400CEAUMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2016 | CoolMOS™ | yes | Active | 3 (168 Hours) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 650V | 118W Tc | 15.1A | SWITCHING | 0.4Ohm | SILICON | N-Channel | 400m Ω @ 3.2A, 10V | 3.5V @ 320μA | 710pF @ 100V | 39nC @ 10V | Super Junction | 15.1A Tc | 215 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSC0906NSATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-F5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 30V | 2.5W Ta 30W Tc | 63A | SWITCHING | 0.0064Ohm | SILICON | N-Channel | 4.5m Ω @ 30A, 10V | 2V @ 250μA | 870pF @ 15V | 13nC @ 10V | 3.8ns | 20V | 18A Ta 63A Tc | 252A | 14 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPD50R280CEAUMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | CoolMOS™ | yes | Active | 3 (168 Hours) | 2 | ROHS3 Compliant | Contains Lead | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | Halogen Free | 500V | 119W Tc | SWITCHING | 0.28Ohm | SILICON | N-Channel | 280m Ω @ 4.2A, 13V | 3.5V @ 350μA | 773pF @ 100V | 32.6nC @ 10V | 13A Ta | 550V | 42.9A | 13V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSC034N03LSGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 39 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | 8-PowerTDFN | No SVHC | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-N5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 2.5W | 6.9 ns | 2.2V | 30V | 2.5W Ta 57W Tc | 100A | SWITCHING | 28 ns | SILICON | N-Channel | 3.4m Ω @ 30A, 10V | 2.2V @ 250μA | 4300pF @ 15V | 52nC @ 10V | 4.8ns | 4.6 ns | 20V | 22A | 22A Ta 100A Tc | 400A | 55 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSC042N03LSGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 39 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | OptiMOS™ | no | Active | 1 (Unlimited) | 8 | EAR99 | ROHS3 Compliant | Contains Lead | Tin | 8 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 57W | 30V | 2.5W Ta 57W Tc | 93A | SWITCHING | 0.0065Ohm | SILICON | N-Channel | 4.2m Ω @ 30A, 10V | 2.2V @ 250μA | 3500pF @ 15V | 42nC @ 10V | 4.4ns | 20V | 20A | 20A Ta 93A Tc | 372A | 50 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BCR401WE6327 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
Surface Mount | Cut Tape (CT) | 4 | 150°C | -65°C | 2mm | RoHS Compliant | 4 | SOT-343-4 | 1 | DUAL | GULL WING | 10V | 1 | 16V | 500mW | LED DISPLAY DRIVER | 500mW | 60mA | 10mA | 1 | NO | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BGF106CE6328XTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2013 | Obsolete | 1 (Unlimited) | EAR99 | RoHS Compliant | Copper, Silver, Tin | 5.5V | 8-UFBGA, WLCSP | unknown | 0.026 0.65mm | Surface Mount | -40°C~85°C | 0.047Lx0.047W 1.20mmx1.20mm | RC | 8504.50.80.00 | Low Pass | 3 | 16.9dB @ 800MHz ~ 4GHz | Data Lines for Mobile Devices | Yes | 2nd | R = 47 Ω, 100 Ω, C = 16.5pF (Total) | 47 100 | 290MHz Cutoff | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BCR401UE6327XT | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
Surface Mount | Tape and Reel | 150°C | RoHS Compliant | No | 6 | SC | 40V | 500mA | 500W | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BTS441TS | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
Through Hole | 5 | EAR99 | 150°C | -40°C | RoHS Compliant | Contains Lead | 5 | TO-220-5 | 15mOhm | MOS | 1 | e3 | Matte Tin (Sn) | ZIG-ZAG | NOT SPECIFIED | 12V | NOT SPECIFIED | 3 | Peripheral Drivers | Not Qualified | 43V | 1 | 65A | 21A | BUFFER OR INVERTER BASED PERIPHERAL DRIVER | 1 | TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL | SINK | 125W | 200 µs | 21A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BTS441T | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | 4 | EAR99 | 150°C | -40°C | RoHS Compliant | Contains Lead | No | 5 | TO-220-5 | 15mOhm | MOS | 1 | 2mA | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 5V | 4 | R-PSSO-G4 | Peripheral Drivers | 1 | 65A | 21A | 17A | 125W | BUFFER OR INVERTER BASED PERIPHERAL DRIVER | 1 | TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL; UNDER VOLTAGE | SINK | 125W | 200 µs | 21A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BTS133NKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | 3 | EAR99 | 150°C | -40°C | RoHS Compliant | 3 | TO-220AB | MOS | 1 | SINGLE | Not Qualified | 1 | 7A | BUFFER OR INVERTER BASED PERIPHERAL DRIVER | OVER CURRENT; OVER VOLTAGE; THERMAL | SINK | 28A |
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