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Infineon Technologies(12661)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Operating Supply Voltage | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | REACH SVHC | Reach Compliance Code | Lead Pitch | Frequency | Height | Width | Resistance | Mounting Type | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | Height Seated (Max) | Manufacturer Package Identifier | Number of Functions | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Number of Channels | Subcategory | Qualification Status | Termination Style | Number of Elements | Configuration | JEDEC-95 Code | Analog IC - Other Type | Case Connection | Halogen Free | Data Rate | Applications | Element Configuration | Power Dissipation | Output | Turn On Delay Time | Threshold Voltage | Max Dual Supply Voltage | Supplier Device Package | Reverse Recovery Time | Power Dissipation-Max | Recovery Time | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Turn-Off Delay Time | Actuator Type | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | FET Feature | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Power - Output | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Voltage - Supply | Protocol | Output Signal | RF Family/Standard | Serial Interfaces | Modulation | For Measuring | Rotation Angle - Electrical, Mechanical |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IRFB4620PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2008 | HEXFET® | Active | 1 (Unlimited) | 3 | Through Hole | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | No | 3 | TO-220-3 | No SVHC | 9.02mm | 4.826mm | 72.5MOhm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | FET General Purpose Power | 1 | TO-220AB | Single | 144W | 13.4 ns | 3V | 144W Tc | 25A | SWITCHING | 25.4 ns | SILICON | N-Channel | 72.5m Ω @ 15A, 10V | 5V @ 100μA | 1710pF @ 50V | 38nC @ 10V | 22.4ns | 14.8 ns | 20V | 200V | 200V | 3 V | 25A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF4104PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2003 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | 75A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | TO-220-3 | No SVHC | 9.017mm | 4.826mm | 5.5MOhm | Through Hole | -55°C~175°C TJ | 40V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | FET General Purpose Power | 1 | TO-220AB | DRAIN | Single | 140W | 16 ns | 4V | 140W Tc | 35 ns | 75A | SWITCHING | 38 ns | SILICON | N-Channel | 5.5m Ω @ 75A, 10V | 4V @ 250μA | 3000pF @ 25V | 100nC @ 10V | 130ns | 77 ns | 20V | 40V | 75A Tc | 470A | 220 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA90R1K2C3XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 29 Weeks | Tube | 2008 | CoolMOS™ | yes | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-220-3 Full Pack | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | R-PSFM-T3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | 31W Tc | SWITCHING | 900V | SILICON | N-Channel | 1.2 Ω @ 2.8A, 10V | 3.5V @ 310μA | 710pF @ 100V | 28nC @ 10V | 3.1A | 5.1A Tc | 900V | 10A | 68 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPAN80R450P7XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tube | 2013 | CoolMOS™ P7 | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-220-3 Full Pack | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | NO | R-PSFM-T3 | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | 29W Tc | SWITCHING | 0.45Ohm | 800V | SILICON | N-Channel | 450m Ω @ 4.5A, 10V | 3.5V @ 220μA | 770pF @ 500V | 24nC @ 10V | 11A Tc | 800V | 29A | 29 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFB4410PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2004 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 10.6426mm | ROHS3 Compliant | Lead Free | 96A | No | 3 | TO-220-3 | No SVHC | 2.54mm | 9.017mm | 4.82mm | 10mOhm | Through Hole | -55°C~175°C TJ | 100V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN OVER NICKEL | 250 | 30 | FET General Purpose Power | 1 | TO-220AB | Single | 250W | 24 ns | 4V | 38 ns | 200W Tc | 88A | SWITCHING | 55 ns | SILICON | N-Channel | 10m Ω @ 58A, 10V | 4V @ 150μA | 5150pF @ 50V | 180nC @ 10V | 80ns | 50 ns | 20V | 100V | 100V | 4 V | 75A | 88A Tc | 220 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFB4410ZGPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Through Hole | Tube | 2009 | HEXFET® | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | No | 3 | TO-220-3 | No SVHC | 16.51mm | 4.826mm | 9MOhm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | FET General Purpose Power | 1 | TO-220AB | DRAIN | Single | 230W | 16 ns | 230W Tc | 97A | SWITCHING | 43 ns | SILICON | N-Channel | 9m Ω @ 58A, 10V | 4V @ 150μA | 4820pF @ 50V | 120nC @ 10V | 52ns | 57 ns | 20V | 100V | 4 V | 97A Tc | 242 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA50R250CPXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2008 | CoolMOS™ | yes | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-220-3 Full Pack | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | Halogen Free | 33W | 35 ns | 500V | 33W Tc | 13A | SWITCHING | 0.25Ohm | 80 ns | SILICON | N-Channel | 250m Ω @ 7.8A, 10V | 3.5V @ 520μA | 1420pF @ 100V | 36nC @ 10V | 14ns | 11 ns | 20V | Super Junction | 13A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA032N06N3GXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Through Hole | Tube | 2008 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-220-3 Full Pack | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | Halogen Free | 41W | 35 ns | 60V | 41W Tc | 84A | SWITCHING | 62 ns | SILICON | N-Channel | 3.2m Ω @ 80A, 10V | 4V @ 118μA | 13000pF @ 30V | 165nC @ 10V | 120ns | 20 ns | 20V | 84A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA60R170CFD7XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tube | 2014 | CoolMOS™ CFD7 | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-220-3 Full Pack | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | NO | R-PSFM-T3 | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | 26W Tc | SWITCHING | 0.17Ohm | 600V | SILICON | N-Channel | 170m Ω @ 6A, 10V | 4.5V @ 300μA | 1199pF @ 400V | 28nC @ 10V | 8A Tc | 650V | 51A | 60 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFB3207PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2004 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 10.6426mm | ROHS3 Compliant | Lead Free | 180A | No | 3 | TO-220-3 | No SVHC | 2.54mm | 4.82mm | 4.826mm | Through Hole | -55°C~175°C TJ | 75V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | FET General Purpose Power | 1 | TO-220AB | DRAIN | Single | 300W | 29 ns | 4V | 330W Tc | 180A | SWITCHING | 0.0045Ohm | 68 ns | SILICON | N-Channel | 4.5m Ω @ 75A, 10V | 4V @ 250μA | 7600pF @ 50V | 260nC @ 10V | 120ns | 74 ns | 20V | 75V | 75V | 4 V | 75A | 170A Tc | 720A | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPP11N80C3XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tube | 2005 | CoolMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | AVALANCHE RATED | TO-220-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | R-PSFM-T3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | 156W Tc | 0.45Ohm | 800V | SILICON | N-Channel | 450m Ω @ 7.1A, 10V | 3.9V @ 680μA | 1600pF @ 100V | 85nC @ 10V | 11A | 11A Tc | 800V | 33A | 470 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL1004PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2004 | HEXFET® | Active | 1 (Unlimited) | 3 | Through Hole | EAR99 | 10.6426mm | ROHS3 Compliant | Lead Free | Tin | 130A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE | TO-220-3 | No SVHC | 8.77mm | 4.82mm | 6.5mOhm | Through Hole | -55°C~175°C TJ | 40V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | FET General Purpose Power | 1 | TO-220AB | DRAIN | Single | 200W | 16 ns | 1V | 200W Tc | 130A | SWITCHING | 25 ns | SILICON | N-Channel | 6.5m Ω @ 78A, 10V | 1V @ 250μA | 5330pF @ 25V | 100nC @ 4.5V | 210ns | 14 ns | 16V | 40V | 40V | 1 V | 130A Tc | 520A | 700 mJ | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP60R170CFD7XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tube | 2014 | CoolMOS™ CFD7 | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-220-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | NO | R-PSFM-T3 | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | DRAIN | 75W Tc | SWITCHING | 0.17Ohm | 600V | SILICON | N-Channel | 170m Ω @ 6A, 10V | 4.5V @ 300μA | 1199pF @ 400V | 28nC @ 10V | 14A | 14A Tc | 650V | 51A | 60 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP041N04NGXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Through Hole | Tube | 2008 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | No | 3 | TO-220-3 | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | 3 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | Halogen Free | 94W | 16 ns | 40V | 94W Tc | 80A | SWITCHING | 23 ns | SILICON | N-Channel | 4.1m Ω @ 80A, 10V | 4V @ 45μA | 4500pF @ 20V | 56nC @ 10V | 3.8ns | 4.8 ns | 20V | 80A Tc | 400A | 60 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TLE5009A16E2200XUMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 39 Weeks | Tape & Reel (TR) | Automotive, AEC-Q100 | Active | 3 (168 Hours) | ROHS3 Compliant | 16-TSSOP (0.154, 3.90mm Width) | Surface Mount | -40°C~125°C | Magnetoresistive | Gull Wing | Analog Voltage | External Magnet, Not Included | 4.5V~5.5V | Cosine, Sine | Angle | 0° ~ 360°, Continuous | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TLE5009A16E1210XUMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 39 Weeks | Tape & Reel (TR) | Automotive, AEC-Q100 | Active | 3 (168 Hours) | ROHS3 Compliant | 16-TSSOP (0.154, 3.90mm Width) | Surface Mount | -40°C~125°C | Magnetoresistive | Gull Wing | Analog Voltage | External Magnet, Not Included | 3V~3.6V | Cosine, Sine | Angle | 0° ~ 360°, Continuous | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TLE5009A16E2210XUMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 39 Weeks | Tape & Reel (TR) | Automotive, AEC-Q100 | Active | 3 (168 Hours) | ROHS3 Compliant | 16-TSSOP (0.154, 3.90mm Width) | Surface Mount | -40°C~125°C | Magnetoresistive | Gull Wing | Analog Voltage | External Magnet, Not Included | 4.5V~5.5V | Cosine, Sine | Angle | 0° ~ 360°, Continuous | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TLE5012BE3005FUMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 17 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | yes | Not For New Designs | 3 (168 Hours) | 8 | 5V | 5mm | ROHS3 Compliant | 8 | 8-SOIC (0.154, 3.90mm Width) | SPI | 4mm | Surface Mount | -40°C~150°C | Magnetoresistive | 1.75mm | 1 | e3 | Tin (Sn) | NOT SPECIFIED | 5V | NOT SPECIFIED | 8 | 1.27mm | 3V | Gull Wing | ANALOG CIRCUIT | SENT, SPI | External Magnet, Not Included | 3V~5.5V | Cosine, Sine | Angle | 0° ~ 360°, Continuous | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BGM12LBA9E6327XTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
12 Weeks | Tape & Reel (TR) | Active | 1 (Unlimited) | ROHS3 Compliant | 703MHz~960MHz | Surface Mount | -40°C~85°C | 54Mbps | -5dBm | 1.6V~3.1V | 802.11a/b/g/n, Bluetooth v4.0 | Bluetooth | SPI, USB | 16QAM, 64QAM, 256QAM, DSSS, FHSS, OFDM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BGM15LBA12E6327XTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
12 Weeks | Tape & Reel (TR) | Active | 1 (Unlimited) | ROHS3 Compliant | 12-UFQFN Exposed Pad | 703MHz~960MHz | Surface Mount | -40°C~85°C | 54Mbps | -4dBm | 1.7V~3.1V | 802.11a/b/g/n, Bluetooth v4.0 | Bluetooth | SPI, USB | 16QAM, 64QAM, 256QAM, DSSS, FHSS, OFDM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ADM8262-AC-T-1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tray | 2004 | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | Contains Lead | 128 | 128-BFQFP | Serial | Surface Mount | ADM8262 | Wireless Power Transmitter | P-FQFP-128 | 3.3V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF3805STRL-7PP | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | HEXFET® | Active | 1 (Unlimited) | 6 | SMD/SMT | EAR99 | 10.3378mm | ROHS3 Compliant | Lead Free | 160A | No | 7 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | No SVHC | 4.5466mm | 15.2908mm | 2.6MOhm | Surface Mount | -55°C~175°C TJ | 55V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | R-PSSO-G6 | FET General Purpose Power | 1 | DRAIN | Single | 300W | 23 ns | 4V | 300W Tc | 68 ns | 240A | SWITCHING | 80 ns | SILICON | N-Channel | 2.6m Ω @ 140A, 10V | 4V @ 250μA | 7820pF @ 25V | 200nC @ 10V | 130ns | 52 ns | 20V | 55V | 55V | 4 V | 160A Tc | 680 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB107N20N3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | OptiMOS™ | yes | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | 4.7mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSSO-G2 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 300mW | 18 ns | 300W Tc | 88A | 175°C | SWITCHING | 41 ns | SILICON | N-Channel | 10.7m Ω @ 88A, 10V | 4V @ 270μA | 7100pF @ 100V | 87nC @ 10V | 26ns | 11 ns | 20V | 200V | 88A Tc | 560 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP260NPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Bulk | 2004 | HEXFET® | Active | 1 (Unlimited) | 3 | Through Hole | EAR99 | 15.875mm | ROHS3 Compliant | Contains Lead, Lead Free | 50A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | TO-247-3 | No SVHC | 20.2946mm | 5.3mm | 40mOhm | Through Hole | -55°C~175°C TJ | 200V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 250 | 30 | FET General Purpose Power | 1 | TO-247AC | DRAIN | Single | 300W | 17 ns | 4V | 300W Tc | 402 ns | 50A | SWITCHING | 55 ns | SILICON | N-Channel | 40m Ω @ 28A, 10V | 4V @ 250μA | 4057pF @ 25V | 234nC @ 10V | 60ns | 48 ns | 20V | 200V | 200V | 4 V | 50A Tc | 200A | 560 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRF4905STRL | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | Automotive, AEC-Q101, HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Lead Free | Tin | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | R-PSSO-G2 | 1 | Other Transistors | 1 | DRAIN | Single | 17W | 20 ns | 200W Tc | 42A | SWITCHING | 0.02Ohm | 51 ns | SILICON | P-Channel | 20m Ω @ 42A, 10V | 4V @ 250μA | 3500pF @ 25V | 180nC @ 10V | 99ns | 64 ns | 20V | -55V | 42A Tc | 55V | 280A | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPT020N10N3ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | OptiMOS™ | Active | 1 (Unlimited) | 8 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | ULTRA LOW RESISTANCE | 8-PowerSFN | not_compliant | 2.4mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | PG-HSOF-8 | e3 | Tin (Sn) | SINGLE | FLAT | 260 | 40 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 375W | 34 ns | 2V | 100V | 375W Tc | 300A | 175°C | 0.02Ohm | 84 ns | SILICON | N-Channel | 2m Ω @ 150A, 10V | 3.5V @ 272μA | 11200pF @ 50V | 156nC @ 10V | 20V | 100V | 300A Tc | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPW65R019C7FKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 2008 | CoolMOS™ C7 | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | 3 | TO-247-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 446W | 30 ns | 650V | 446W Tc | 75A | SWITCHING | 106 ns | SILICON | N-Channel | 19m Ω @ 58.3A, 10V | 4V @ 2.92mA | 9900pF @ 400V | 215nC @ 10V | 27ns | 5 ns | 20V | 75A Tc | 496A | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPN50R2K0CEATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tape & Reel (TR) | 2013 | CoolMOS™ CE | yes | Active | 3 (168 Hours) | EAR99 | ROHS3 Compliant | 3 | SOT-223-3 | No SVHC | not_compliant | Surface Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | e3 | Tin (Sn) | 3V | 5W Tc | 3.6A | N-Channel | 2 Ω @ 600mA, 13V | 3.5V @ 50μA | 124pF @ 100V | 6nC @ 10V | 3.6A Tc | 500V | 13V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPN50R3K0CEATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tape & Reel (TR) | 2013 | CoolMOS™ CE | yes | Active | 3 (168 Hours) | 3 | EAR99 | ROHS3 Compliant | 3 | SOT-223-3 | No SVHC | not_compliant | Surface Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 3V | 5W Tc | 2.6A | SWITCHING | 3Ohm | 500V | SILICON | N-Channel | 3 Ω @ 400mA, 13V | 3.5V @ 30μA | 84pF @ 100V | 4.3nC @ 10V | 2.6A Tc | 500V | 13V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP250NPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2004 | HEXFET® | Active | 1 (Unlimited) | 3 | Through Hole | EAR99 | 15.875mm | ROHS3 Compliant | Contains Lead, Lead Free | 30A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | TO-247-3 | No SVHC | 20.2946mm | 5.3mm | 75mOhm | Through Hole | -55°C~175°C TJ | 200V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 250 | 30 | FET General Purpose Power | 1 | TO-247AC | DRAIN | Single | 214W | 14 ns | 214W Tc | 279 ns | 30A | SWITCHING | 41 ns | SILICON | N-Channel | 75m Ω @ 18A, 10V | 4V @ 250μA | 2159pF @ 25V | 123nC @ 10V | 43ns | 33 ns | 20V | 200V | 200V | 4 V | 30A Tc | 10V | ±20V |