Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | REACH SVHC | Reach Compliance Code | Min Supply Voltage | Number of Drivers | Frequency | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | Max Supply Current | Bandwidth | Height Seated (Max) | Current | HTS Code | Number of Functions | Nominal Supply Current | Type | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Number of Channels | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Ambient Temperature Range High | Max Power Dissipation | Termination Style | Voltage | Number of Elements | Configuration | JEDEC-95 Code | Number of Outputs | Max Output Current | Analog IC - Other Type | Case Connection | Halogen Free | Output Current per Channel | Element Configuration | Current - Output | Power Dissipation | Output | Propagation Delay | Turn On Delay Time | Interface IC Type | Driver Number of Bits | Built-in Protections | Threshold Voltage | Output Current Flow Direction | Max Dual Supply Voltage | Drain to Source Resistance | Supply Voltage1-Nom | Supplier Device Package | Power Dissipation-Max | Recovery Time | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Turn-Off Delay Time | Actuator Type | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Input Capacitance | Power - Output | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Rds On Max | Turn On Time | Screening Level | Voltage - Supply | Linearity | Output Peak Current Limit-Nom | Output Signal | Turn Off Time | High Side Driver | For Measuring | Rotation Angle - Electrical, Mechanical |
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IRF5305STRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2005 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | 10.668mm | ROHS3 Compliant | Contains Lead, Lead Free | Tin | -31A | No | 3 | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED, HIGH RELIABILITY | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 5.084mm | 9.65mm | 60mOhm | Surface Mount | -55°C~175°C TJ | -55V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-PSSO-G2 | 1 | Other Transistors | 1 | TO-252 | DRAIN | Single | 110W | 14 ns | -4V | 3.8W Ta 110W Tc | 110 ns | -31A | 175°C | SWITCHING | 39 ns | SILICON | P-Channel | 60m Ω @ 16A, 10V | 4V @ 250μA | 1200pF @ 25V | 63nC @ 10V | 66ns | 63 ns | 20V | -55V | -55V | -4 V | 31A Tc | 55V | 280 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF9540NSTRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2003 | HEXFET® | Active | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 10.668mm | ROHS3 Compliant | Contains Lead | Tin | -23A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 5.084mm | 9.65mm | 117mOhm | Surface Mount | -55°C~150°C TJ | -100V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 23A | e3 | GULL WING | 260 | 30 | R-PSSO-G2 | 1 | Other Transistors | 100V | 1 | DRAIN | Single | 3.8W | 13 ns | -4V | 3.1W Ta 110W Tc | 210 ns | -23A | 150°C | SWITCHING | 40 ns | SILICON | P-Channel | 117m Ω @ 14A, 10V | 4V @ 250μA | 1450pF @ 25V | 110nC @ 10V | 67ns | 51 ns | 20V | -100V | 100V | -4 V | 23A Tc | 84 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF640NPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 1999 | HEXFET® | Active | 1 (Unlimited) | 3 | Through Hole | EAR99 | 10.668mm | ROHS3 Compliant | Contains Lead, Lead Free | Tin | 18A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | TO-220-3 | No SVHC | 19.8mm | 4.826mm | 150mOhm | Through Hole | -55°C~175°C TJ | 200V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | 250 | 30 | 1 | FET General Purpose Power | 1 | TO-220AB | DRAIN | Single | 150W | 10 ns | 2V | 150W Tc | 241 ns | 18A | 175°C | SWITCHING | 23 ns | SILICON | N-Channel | 150m Ω @ 11A, 10V | 4V @ 250μA | 1160pF @ 25V | 67nC @ 10V | 19ns | 5.5 ns | 20V | 200V | 200V | 4 V | 18A Tc | 72A | 247 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF4905LPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 1997 | HEXFET® | Active | 1 (Unlimited) | 3 | SMD/SMT | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | -74A | No | 3 | HIGH RELIABILITY, AVALANCHE RATED | TO-262-3 Long Leads, I2Pak, TO-262AA | No SVHC | 9.652mm | 4.826mm | Through Hole | -55°C~150°C TJ | -55V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | 30 | Other Transistors | 1 | DRAIN | Single | 200W | 20 ns | 4V | 170W Tc | -74A | SWITCHING | 0.02Ohm | 51 ns | SILICON | P-Channel | 20m Ω @ 42A, 10V | 4V @ 250μA | 3500pF @ 25V | 180nC @ 10V | 99ns | 64 ns | 20V | -55V | 55V | 4 V | 42A | 42A Tc | 280A | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFS3107TRL7PP | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | HEXFET® | Active | 1 (Unlimited) | ROHS3 Compliant | Lead Free | No | 7 | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | No SVHC | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | FET General Purpose Power | 1 | Single | 370W | 17 ns | 4V | 370W Tc | 240A | 100 ns | N-Channel | 2.6m Ω @ 160A, 10V | 4V @ 250μA | 9200pF @ 50V | 240nC @ 10V | 80ns | 64 ns | 20V | 75V | 260A | 240A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPT004N03LATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | OptiMOS™ | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerSFN | No SVHC | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | FLAT | R-PSSO-F2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 300W | 30 ns | 2.2V | 30V | 3.8W Ta 300W Tc | 300A | SWITCHING | 0.0005Ohm | 149 ns | SILICON | N-Channel | 0.4m Ω @ 150A, 10V | 2.2V @ 250μA | 24000pF @ 15V | 163nC @ 4.5V | 17ns | 37 ns | 20V | 300A Tc | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB017N06N3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | OptiMOS™ | no | Active | 1 (Unlimited) | 6 | EAR99 | ROHS3 Compliant | Contains Lead | 7 | TO-263-7, D2Pak (6 Leads + Tab) | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 7 | R-PSSO-G6 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 250W | 41 ns | 60V | 250W Tc | 180A | SWITCHING | 79 ns | SILICON | N-Channel | 1.7m Ω @ 100A, 10V | 4V @ 196μA | 23000pF @ 30V | 275nC @ 10V | 80ns | 24 ns | 20V | 180A Tc | 634 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB048N15N5ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Tape & Reel (TR) | 2013 | OptiMOS™ | yes | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 300W Tc | SWITCHING | 0.0048Ohm | 150V | SILICON | N-Channel | 4.8m Ω @ 60A, 10V | 4.6V @ 264μA | 7800pF @ 75V | 100nC @ 10V | 120A | 120A Tc | 150V | 480A | 230 mJ | 8V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB65R110CFDATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | CoolMOS™ | no | Active | 1 (Unlimited) | 2 | ROHS3 Compliant | Contains Lead | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | 4 | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 16 ns | 4V | 650V | 277.8W Tc | 31.2A | SWITCHING | 68 ns | SILICON | N-Channel | 110m Ω @ 12.7A, 10V | 4.5V @ 1.3mA | 3240pF @ 100V | 118nC @ 10V | 11ns | 6 ns | 20V | 31.2A Tc | 99.6A | 845 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRLTS6342TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | HEXFET® | Active | 1 (Unlimited) | 6 | EAR99 | 3mm | ROHS3 Compliant | Lead Free | No | 6 | SOT-23-6 | No SVHC | 1.3mm | 1.75mm | 17.5MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | GULL WING | FET General Purpose Power | 1 | Single | 2W | 5.4 ns | 2W Ta | 20 ns | 8.3A | SWITCHING | 32 ns | SILICON | N-Channel | 17.5m Ω @ 8.3A, 4.5V | 1.1V @ 10μA | 1010pF @ 25V | 11nC @ 4.5V | 11ns | 15 ns | 12V | 30V | -400 mV | 8.3A Ta | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRLML0040TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 3.0226mm | ROHS3 Compliant | Lead Free | No | 3 | HIGH RELIABILITY | TO-236-3, SC-59, SOT-23-3 | No SVHC | 1.016mm | 1.397mm | 56MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | FET General Purpose Power | 1 | Single | 1.3W | 5.1 ns | 1.8V | 1.3W Ta | 3.6A | SWITCHING | 6.4 ns | SILICON | N-Channel | 56m Ω @ 3.6A, 10V | 2.5V @ 25μA | 266pF @ 25V | 3.9nC @ 4.5V | 5.4ns | 4.3 ns | 16V | 40V | 1.8 V | 3.6A Ta | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF7458TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 8 | 4.9784mm | ROHS3 Compliant | Lead Free | 14A | No | 8 | AVALANCHE RATED | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.4986mm | 3.9878mm | 8MOhm | Surface Mount | -55°C~150°C TJ | 30V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | GULL WING | 1 | Single | 2.5W | 10 ns | 2.5W Ta | 77 ns | 14A | SWITCHING | 22 ns | SILICON | N-Channel | 8m Ω @ 14A, 16V | 4V @ 250μA | 2410pF @ 15V | 59nC @ 10V | 4.6ns | 5 ns | 30V | 30V | 30V | 4 V | 14A Ta | 10V 16V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFR825TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | HEXFET® | Active | 1 (Unlimited) | 2 | ROHS3 Compliant | Lead Free | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 1.3Ohm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | R-PSSO-G2 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 119W | 8.5 ns | 119W Tc | 6A | SWITCHING | 30 ns | SILICON | N-Channel | 1.3 Ω @ 3.7A, 10V | 5V @ 250μA | 1346pF @ 25V | 34nC @ 10V | 25ns | 20 ns | 20V | 500V | 6A | 6A Tc | 24A | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPD60R1K4C6ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | CoolMOS™ C6 | yes | Not For New Designs | 1 (Unlimited) | 2 | ROHS3 Compliant | Contains Lead | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 600V | 28.4W Tc | 3.2A | SWITCHING | SILICON | N-Channel | 1.4 Ω @ 1.1A, 10V | 3.5V @ 90μA | 200pF @ 100V | 9.4nC @ 10V | 3.2A Tc | 8A | 26 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPD80R2K0P7ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tape & Reel (TR) | 2014 | CoolMOS™ P7 | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 24W Tc | SWITCHING | 2Ohm | 800V | SILICON | N-Channel | 2 Ω @ 940mA, 10V | 3.5V @ 50μA | 175pF @ 500V | 9nC @ 10V | 3A Tc | 800V | 6A | 6 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPD80R2K8CEATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | CoolMOS™ CE | Active | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | Lead Free | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | 3.949996g | -55°C~150°C TJ | MOSFET (Metal Oxide) | 1 | Single | 25 ns | 800V | 2.4Ohm | PG-TO252-3 | 42W Tc | 1.9A | 72 ns | N-Channel | 2.8Ohm @ 1.1A, 10V | 3.9V @ 120μA | 290pF @ 100V | 12nC @ 10V | 15ns | 18 ns | 30V | 1.9A Tc | 800V | 290pF | 10V | ±20V | 2.8 Ω | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPZ40N04S55R4ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | Automotive, AEC-Q101, OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerVDFN | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | R-PDSO-N3 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 40V | 48W Tc | 40A | 0.0063Ohm | SILICON | N-Channel | 5.4m Ω @ 20A, 10V | 3.4V @ 17μA | 1300pF @ 25V | 23nC @ 10V | 40A Tc | 160A | 53 mJ | 7V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPD088N06N3GBTMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | OptiMOS™ | no | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSSO-G2 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | Not Halogen Free | 71W | 15 ns | 3V | 60V | 71W Tc | 50A | SWITCHING | 0.0088Ohm | 20 ns | SILICON | N-Channel | 8.8m Ω @ 50A, 10V | 4V @ 34μA | 3900pF @ 30V | 48nC @ 10V | 40ns | 5 ns | 20V | 50A Tc | 200A | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSC0902NSATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-F5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 2.5W | 4.2 ns | 30V | 2.5W Ta 48W Tc | 24A | SWITCHING | 0.0035Ohm | 21 ns | SILICON | N-Channel | 2.6m Ω @ 30A, 10V | 2.2V @ 250μA | 1700pF @ 15V | 26nC @ 10V | 5.2ns | 3.6 ns | 20V | 24A Ta 100A Tc | 400A | 40 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AUIRS2184STR | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | 1 | 8 | EAR99 | 125°C | -40°C | 4.9784mm | RoHS Compliant | Lead Free | 8 | SOIC | 20V | 10V | 2 | 1.4986mm | 3.9878mm | CMOS | 1 | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 15V | 30 | AUTOMOTIVE | Peripheral Drivers | Not Qualified | 15V | 2.3A | 1.9A | 625mW | 900 ns | 90 ns | HALF BRIDGE BASED PERIPHERAL DRIVER | TRANSIENT; UNDER VOLTAGE | SOURCE SINK | 15V | 625mW | 40 ns | 60ns | 35 ns | 0.9 µs | 2.3A | 0.4 µs | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SAF 82525 N V2.2 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tube | Obsolete | 3 (168 Hours) | 44-LCC (J-Lead) | Serial | Surface Mount | SA*82525 | P-LCC-44-1 | 4.75V~5.25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SAB 82525 N V2.2 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tube | Obsolete | 3 (168 Hours) | 44-LCC (J-Lead) | Serial | Surface Mount | SA*82525 | P-LCC-44-1 | 4.75V~5.25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BGT24LTR11N16E6327XTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Tape & Reel (TR) | 2016 | yes | Active | 1 (Unlimited) | 16 | 2.4mm | ROHS3 Compliant | Lead Free | 16-WFQFN Exposed Pad | 24GHz~24.25GHz | 770μm | Surface Mount | -40°C~85°C | 200MHz | 8542.39.00.01 | 1 | 45mA | TxRx Only | BOTTOM | BUTT | NOT SPECIFIED | 3.3V | NOT SPECIFIED | YES | 0.5mm | S-PBCC-B16 | 85°C | 300mW | 6dBm | 3.3V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TLE5109A16DE2210XUMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 39 Weeks | Tape & Reel (TR) | Automotive, AEC-Q100 | Active | 1 (Unlimited) | ROHS3 Compliant | 16-TSSOP (0.154, 3.90mm Width) | Surface Mount | Magnetoresistive | Gull Wing | Analog Voltage | External Magnet, Not Included | 5V | ±0.1° | Cosine, Sine | Angle | 0° ~ 180° | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TLE5009E2000FUMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Cut Tape (CT) | 2010 | Automotive, AEC-Q100 | Active | 1 (Unlimited) | ROHS3 Compliant | 8-SOIC (0.154, 3.90mm Width) | Surface Mount | -40°C~150°C | Magnetoresistive | 8542.39.00.01 | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | Gull Wing | ANALOG CIRCUIT | Analog Voltage | External Magnet, Not Included | 4.5V~5.5V | Cosine, Sine | Angle | 0° ~ 360°, Continuous | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TLE5009A16E1200XUMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 39 Weeks | Tape & Reel (TR) | Automotive, AEC-Q100 | Active | 3 (168 Hours) | ROHS3 Compliant | 16-TSSOP (0.154, 3.90mm Width) | Surface Mount | -40°C~125°C | Magnetoresistive | Gull Wing | Analog Voltage | External Magnet, Not Included | 3V~3.6V | Cosine, Sine | Angle | 0° ~ 360°, Continuous | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TLE5012BE1000FUMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 2004 | no | Not For New Designs | 3 (168 Hours) | 8 | 5mm | ROHS3 Compliant | 8-SOIC (0.154, 3.90mm Width) | 4mm | Surface Mount | -40°C~150°C | Magnetoresistive | 1.75mm | 8542.39.00.01 | 1 | e3 | Tin (Sn) | NOT SPECIFIED | 5V | NOT SPECIFIED | 8 | YES | 1.27mm | R-PDSO-G8 | 3V | 5.5V | Gull Wing | ANALOG CIRCUIT | SENT, SPI | External Magnet, Not Included | 3V~5.5V | Cosine, Sine | Angle | 0° ~ 360°, Continuous | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TLE4226G | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Digi-Reel® | 3 | 24 | EAR99 | 125°C | -40°C | RoHS Compliant | Contains Lead | No | 24 | SOIC | BIPOLAR | 50mA | 8542.39.00.01 | 1 | 50mA | DUAL | GULL WING | 5V | 24 | INDUSTRIAL | YES | 1.27mm | 4.75V | Peripheral Drivers | 5V | 5.25V | 6 | 70mA | Not Halogen Free | 50mA | 50mA | BUFFER OR INVERTER BASED PERIPHERAL DRIVER | 6 | TRANSIENT; OVER CURRENT; THERMAL | SINK | 0.5A | 3.5 µs | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IR2110L4SCB | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | 14 | EAR99 | 125°C | -55°C | 19mm | RoHS Compliant | Contains Lead | 14 | 20V | 10V | CMOS | 600μA | 4.44mm | 1 | e0 | TIN LEAD | DUAL | NOT SPECIFIED | 15V | NOT SPECIFIED | Not Qualified | 2 | 2A | HALF BRIDGE BASED MOSFET DRIVER | 15V | 1.6W | MIL-STD-883 Class B | 2A | YES | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SP000292889 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
Non-RoHS Compliant |
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