Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Frequency | Height | Width | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Supply Current | Operating Mode | Max Supply Current | Bandwidth | Sensing Method | Number of Functions | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Pin Count | Output Type | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Supply Voltage-Max (Vsup) | Ambient Temperature Range High | Number of Elements | Configuration | JEDEC-95 Code | Analog IC - Other Type | Case Connection | Halogen Free | Response Time | Data Rate | Polarization | Element Configuration | Power Dissipation | Output | Turn On Delay Time | Threshold Voltage | Max Dual Supply Voltage | Drain to Source Resistance | Supplier Device Package | Power Dissipation-Max | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | FET Feature | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Input Capacitance | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Rds On Max | Accuracy | Function | Voltage - Supply | Sensor Type | Current - Sensing | Linearity | Protocol | RF Family/Standard | Serial Interfaces | Modulation | For Measuring |
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IPW65R080CFDFKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tube | 2008 | CoolMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-247-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | R-PSFM-T3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | 391W Tc | SWITCHING | 0.08Ohm | 650V | SILICON | N-Channel | 80m Ω @ 17.6A, 10V | 4.5V @ 1.76mA | 5030pF @ 100V | 170nC @ 10V | 43.3A | 43.3A Tc | 700V | 137A | 1160 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPP65R045C7XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 2008 | CoolMOS™ C7 | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | 3 | TO-220-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | DRAIN | Halogen Free | 227W | 20 ns | 650V | 227W Tc | 46A | SWITCHING | 0.045Ohm | 82 ns | SILICON | N-Channel | 45m Ω @ 24.9A, 10V | 4V @ 1.25mA | 4340pF @ 400V | 93nC @ 10V | 14ns | 7 ns | 20V | 46A Tc | 249 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPW60R040CFD7XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tube | OptiMOS™ | Active | 1 (Unlimited) | ROHS3 Compliant | TO-247-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 227W Tc | N-Channel | 40m Ω @ 24.9A, 10V | 4.5V @ 1.25mA | 4354pF @ 400V | 109nC @ 10V | 50A Tc | 600V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPW60R040C7XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 2007 | CoolMOS™ C7 | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | TO-247-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | R-PSFM-T3 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 600V | 227W Tc | 50A | SWITCHING | 0.04Ohm | SILICON | N-Channel | 40m Ω @ 24.9A, 10V | 4V @ 1.24mA | 4340pF @ 400V | 107nC @ 10V | 50A Tc | 211A | 249 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPW65R080CFDAFKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 2008 | Automotive, AEC-Q101, CoolMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | HIGH RELIABILITY | TO-247-3 | Through Hole | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSFM-T3 | 1 | SINGLE WITH BUILT-IN DIODE | 20 ns | 650V | 391W Tc | 43.3A | SWITCHING | 0.08Ohm | 85 ns | SILICON | N-Channel | 80m Ω @ 17.6A, 10V | 4.5V @ 1.76mA | 4440pF @ 100V | 161nC @ 10V | 18ns | 6 ns | 20V | 650V | 43.3A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BGM13HBA9E6327XTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
12 Weeks | Tape & Reel (TR) | Active | 1 (Unlimited) | ROHS3 Compliant | 1.805GHz~2.69GHz | Surface Mount | -40°C~85°C | 54Mbps | 1.6V~3.1V | 802.11a/b/g/n, Bluetooth v4.0 | Bluetooth | SPI, USB | 16QAM, 64QAM, 256QAM, DSSS, FHSS, OFDM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BGM14HBA12E6327XTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
12 Weeks | Active | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TLI4970D025T5XUMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Cut Tape (CT) | 2007 | Automotive, AEC-Q100 | yes | Active | 3 (168 Hours) | 8 | 7mm | ROHS3 Compliant | Lead Free | 8 | SEATED HGT-CALCULATED | 8-PowerTDFN | DC~18kHz | 1.05mm | Surface Mount | -40°C~85°C | 12mA | 20mA | 18 kHz | Hall Effect | 1 | DUAL | NO LEAD | NOT SPECIFIED | 3.3V | NOT SPECIFIED | Digital | 1 | 3.5V | 85°C | ANALOG CIRCUIT | Halogen Free | 57μs | Unidirectional | SPI | 125°C | ±3.5% | 3.1V~3.5V | Hall Effect, Differential | 25A | ±1.6% | AC/DC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFSL3306PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2007 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | 160A | No | 3 | TO-262-3 Long Leads, I2Pak, TO-262AA | 9.65mm | 4.826mm | Through Hole | -55°C~175°C TJ | 60V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | 40 | FET General Purpose Power | 1 | DRAIN | Single | 230W | 15 ns | 230W Tc | 120A | SWITCHING | 0.0042Ohm | 40 ns | SILICON | N-Channel | 4.2m Ω @ 75A, 10V | 4V @ 150μA | 4520pF @ 50V | 120nC @ 10V | 76ns | 77 ns | 20V | 60V | 120A Tc | 620A | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPA60R230P6XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tube | 2008 | CoolMOS™ P6 | Active | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | Lead Free | 3 | TO-220-3 Full Pack | Through Hole | 6.000006g | -55°C~150°C TJ | MOSFET (Metal Oxide) | 1 | Halogen Free | 12 ns | 600V | 207mOhm | PG-TO220-FP | 33W Tc | 16.8A | 38 ns | N-Channel | 230mOhm @ 6.4A, 10V | 4.5V @ 530μA | 1450pF @ 100V | 31nC @ 10V | 7ns | 6 ns | 20V | 600V | 16.8A Tc | 600V | 1.45nF | 10V | ±20V | 230 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPW60R125P6XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 2008 | CoolMOS™ P6 | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | TO-247-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | R-PSFM-T3 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 600V | 219W Tc | 30A | SWITCHING | 0.125Ohm | SILICON | N-Channel | 125m Ω @ 11.6A, 10V | 4.5V @ 960μA | 2660pF @ 100V | 56nC @ 10V | 30A Tc | 87A | 636 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPAW60R600CEXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 2013 | CoolMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | 3 | TO-220-3 Full Pack | No SVHC | Through Hole | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | 3V | 28W Tc | 10.3A | SWITCHING | 0.6Ohm | 600V | SILICON | N-Channel | 600m Ω @ 2.4A, 10V | 3.5V @ 200μA | 444pF @ 100V | 20.5nC @ 10V | Super Junction | 10.3A Tc | 600V | 19A | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPP076N12N3GXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Through Hole | Tube | 2008 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | TO-220-3 | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSFM-T3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | Halogen Free | 188W | 24 ns | 120V | 188W Tc | 100A | SWITCHING | 0.0076Ohm | 39 ns | SILICON | N-Channel | 7.6m Ω @ 100A, 10V | 4V @ 130μA | 6640pF @ 60V | 101nC @ 10V | 50ns | 10 ns | 20V | 100A Tc | 400A | 230 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPW60R190P6FKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 2008 | CoolMOS™ P6 | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | 3 | TO-247-3 | No SVHC | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | SINGLE WITH BUILT-IN DIODE | 15 ns | 600V | 151W Tc | 20.2A | SWITCHING | 0.19Ohm | 45 ns | SILICON | N-Channel | 190m Ω @ 7.6A, 10V | 4.5V @ 630μ | 1750pF @ 100V | 11nC @ 10V | 8ns | 7 ns | 20V | 20.2A Tc | 57A | 419 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPP020N08N5AKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Through Hole | Tube | 2013 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | TO-220-3 | not_compliant | Through Hole | 6.000006g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 1 | 1 | TO-220AB | DRAIN | Halogen Free | Single | 40 ns | 80V | 375W Tc | 120A | SWITCHING | 0.002Ohm | 102 ns | SILICON | N-Channel | 2m Ω @ 100A, 10V | 3.8V @ 280μA | 16900pF @ 40V | 223nC @ 10V | 36ns | 37 ns | 20V | 80V | 120A Tc | 480A | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SPW35N60C3FKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Tube | 2005 | CoolMOS™ | yes | Not For New Designs | 1 (Unlimited) | 3 | ROHS3 Compliant | AVALANCHE RATED, HIGH VOLTAGE | TO-247-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | R-PSFM-T3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-247AA | 313W Tc | SWITCHING | 0.1Ohm | 600V | SILICON | N-Channel | 100m Ω @ 21.9A, 10V | 3.9V @ 1.9mA | 4500pF @ 25V | 200nC @ 10V | 34.6A | 34.6A Tc | 650V | 103.8A | 1500 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPAN70R450P7SXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tube | CoolMOS™ P7 | Active | 1 (Unlimited) | ROHS3 Compliant | TO-220-3 Full Pack | Through Hole | -40°C~150°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 22.7W Tc | N-Channel | 450m Ω @ 2.3A, 10V | 3.5V @ 120μA | 424pF @ 400V | 13.1nC @ 10V | 10A Tc | 700V | 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPAN70R750P7SXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tube | CoolMOS™ P7 | Active | 1 (Unlimited) | ROHS3 Compliant | TO-220-3 Full Pack | Through Hole | -40°C~150°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 20.8W Tc | N-Channel | 750m Ω @ 1.4A, 10V | 3.5V @ 70μA | 306pF @ 400V | 8.3nC @ 10V | 6.5A Tc | 700V | 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPP126N10N3GXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Through Hole | Tube | 2008 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-220-3 | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | Halogen Free | 94W | 14 ns | 100V | 94W Tc | 58A | SWITCHING | 24 ns | SILICON | N-Channel | 12.3m Ω @ 46A, 10V | 3.5V @ 46μA | 2500pF @ 50V | 35nC @ 10V | 8ns | 5 ns | 20V | 58A Tc | 70 mJ | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPA60R950C6XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Through Hole | Tube | 2005 | CoolMOS™ | yes | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-220-3 Full Pack | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | Halogen Free | 26W | 10 ns | 600V | 26W Tc | 4.4A | SWITCHING | 0.95Ohm | 60 ns | SILICON | N-Channel | 950m Ω @ 1.5A, 10V | 3.5V @ 130μA | 280pF @ 100V | 13nC @ 10V | 8ns | 13 ns | 20V | 4.4A Tc | 46 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPI040N06N3GXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 2008 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.36mm | ROHS3 Compliant | Lead Free | No | 3 | AVALANCHE RATED | TO-262-3 Long Leads, I2Pak, TO-262AA | 9.45mm | 4.52mm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | 3 | FET General Purpose Power | 1 | Halogen Free | Single | 188W | 30 ns | 60V | 188W Tc | 90A | SWITCHING | 0.004Ohm | 40 ns | SILICON | N-Channel | 4m Ω @ 90A, 10V | 4V @ 90μA | 11000pF @ 30V | 98nC @ 10V | 70ns | 5 ns | 20V | 60V | 90A Tc | 165 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPAN70R900P7SXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tube | CoolMOS™ P7 | Active | 1 (Unlimited) | ROHS3 Compliant | TO-220-3 Full Pack | Through Hole | -40°C~150°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 17.9W Tc | N-Channel | 900m Ω @ 1.1A, 10V | 3.5V @ 60μA | 211pF @ 400V | 6.8nC @ 10V | 6A Tc | 700V | 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPP023N04NGXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Through Hole | Tube | 2008 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.36mm | ROHS3 Compliant | Lead Free | 3 | TO-220-3 | No SVHC | 15.95mm | 4.57mm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 3 | FET General Purpose Power | Not Qualified | 1 | TO-220AB | Halogen Free | Single | 167W | 27 ns | 40V | 167W Tc | 90A | SWITCHING | 40 ns | SILICON | N-Channel | 2.3m Ω @ 90A, 10V | 4V @ 95μA | 10000pF @ 20V | 120nC @ 10V | 20V | 90A Tc | 400A | 150 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFI4510GPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 15 Weeks | Through Hole | Tube | 2008 | HEXFET® | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | No | 3 | TO-220-3 Full Pack | No SVHC | Through Hole | 6.000006g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | 42W | 16 ns | 2V | 42W Tc | 35A | SWITCHING | 54 ns | SILICON | N-Channel | 13.5m Ω @ 21A, 10V | 4V @ 100μA | 2998pF @ 50V | 81nC @ 10V | 33ns | 37 ns | 20V | 100V | 35A Tc | 206 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPA60R280P7XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tube | 2014 | CoolMOS™ P7 | Active | Not Applicable | 3 | EAR99 | ROHS3 Compliant | TO-220-3 Full Pack | 20.7mm | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | NOT SPECIFIED | NOT SPECIFIED | NO | R-PSFM-T3 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | 24W | 17 ns | 24W Tc | 12A | 150°C | SWITCHING | 0.28Ohm | 60 ns | SILICON | N-Channel | 280m Ω @ 3.8A, 10V | 4V @ 190μA | 761pF @ 400V | 18nC @ 10V | 20V | 600V | 12A Tc | 36A | 38 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPI90N04S402AKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Through Hole | Tube | 2010 | OptiMOS™ | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | TO-262-3 Long Leads, I2Pak, TO-262AA | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | SINGLE WITH BUILT-IN DIODE | Halogen Free | 23 ns | 40V | 150W Tc | 90A | 0.0025Ohm | 27 ns | SILICON | N-Channel | 2.5m Ω @ 90A, 10V | 4V @ 95μA | 9430pF @ 25V | 118nC @ 10V | 13ns | 26 ns | 20V | 90A Tc | 475 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BGSA20GN10E6327XTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Tape & Reel (TR) | Last Time Buy | 1 (Unlimited) | ROHS3 Compliant | 10-XFQFN Exposed Pad | Surface Mount | Switch | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSC020N03LSGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | OptiMOS™ | no | Active | 1 (Unlimited) | 8 | EAR99 | ROHS3 Compliant | Contains Lead | Tin | 8 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 96W | 30V | 2.5W Ta 96W Tc | 28A | SWITCHING | 0.0029Ohm | SILICON | N-Channel | 2m Ω @ 30A, 10V | 2.2V @ 250μA | 7200pF @ 15V | 93nC @ 10V | 7ns | 20V | 28A Ta 100A Tc | 400A | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSC018N04LSGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | Tin | 8 | LOGIC LEVEL COMPATIBLE | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-F5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 125W | 40V | 2.5W Ta 125W Tc | 30A | SWITCHING | 0.0025Ohm | SILICON | N-Channel | 1.8m Ω @ 50A, 10V | 2V @ 85μA | 12000pF @ 20V | 150nC @ 10V | 7.4ns | 20V | 30A Ta 100A Tc | 400A | 295 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF60R217 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | StrongIRFET™ | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Lead Free | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 83W Tc | 58A | SWITCHING | 0.0099Ohm | 60V | SILICON | N-Channel | 9.9m Ω @ 35A, 10V | 3.7V @ 50μA | 2170pF @ 25V | 66nC @ 10V | 58A Tc | 60V | 217A | 124 mJ | 6V 10V | ±20V |
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