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  • SQJ848EP-T1_GE3

SQJ848EP-T1_GE3

MOSFET N-CH 40V 47A POWERPAKSO-8


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SQJ848EP-T1_GE3
  • Package: PowerPAK® SO-8
  • Datasheet: PDF
  • Stock: 513
  • Description: MOSFET N-CH 40V 47A POWERPAKSO-8 (Kg)

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Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Turn-Off Delay Time 38 ns
Continuous Drain Current (ID) 30A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 47A
Factory Lead Time 12 Weeks
Drain-source On Resistance-Max 0.009Ohm
Drain to Source Breakdown Voltage 40V
Mount Surface Mount
Nominal Vgs 2 V
Mounting Type Surface Mount
Radiation Hardening No
RoHS Status RoHS Compliant
Package / Case PowerPAK® SO-8
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101, TrenchFET®
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
JESD-30 Code R-PSSO-G4
Number of Elements 1
Power Dissipation-Max 68W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 68W
Case Connection DRAIN
Turn On Delay Time 18 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 7.5m Ω @ 10.3A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2500pF @ 20V
Current - Continuous Drain (Id) @ 25°C 47A Tc
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
Rise Time 10ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 17 ns
See Relate Datesheet