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  • RFP12N10L

RFP12N10L

RFP12N10L datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-RFP12N10L
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 946
  • Description: RFP12N10L datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Current 12A
Operating Mode ENHANCEMENT MODE
Power Dissipation 60W
Case Connection DRAIN
Turn On Delay Time 15 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 200m Ω @ 12A, 5V
Vgs(th) (Max) @ Id 2V @ 250μA
Factory Lead Time 9 Weeks
Input Capacitance (Ciss) (Max) @ Vds 900pF @ 25V
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Current - Continuous Drain (Id) @ 25°C 12A Tc
Mount Through Hole
Mounting Type Through Hole
Rise Time 70ns
Package / Case TO-220-3
Drive Voltage (Max Rds On,Min Rds On) 5V
Number of Pins 3
Weight 4.535924g
Vgs (Max) ±10V
Fall Time (Typ) 80 ns
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Turn-Off Delay Time 100 ns
Published 2005
Continuous Drain Current (ID) 12A
JESD-609 Code e3
Threshold Voltage 2V
Pbfree Code yes
Part Status Active
JEDEC-95 Code TO-220AB
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Gate to Source Voltage (Vgs) 10V
Number of Terminations 3
Drain to Source Breakdown Voltage 100V
ECCN Code EAR99
Height 9.4mm
Resistance 200mOhm
Length 10.67mm
Terminal Finish Tin (Sn)
Width 4.83mm
Subcategory FET General Purpose Power
Radiation Hardening No
Voltage - Rated DC 100V
REACH SVHC No SVHC
Technology MOSFET (Metal Oxide)
Current Rating 12A
RoHS Status ROHS3 Compliant
Number of Elements 1
Number of Channels 1
Lead Free Lead Free
Voltage 100V
Power Dissipation-Max 60W Tc
Element Configuration Single
See Relate Datesheet