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  • IPW50R190CEFKSA1

IPW50R190CEFKSA1

Trans MOSFET N-CH 500V 18.5A 3-Pin(3+Tab) TO-247 Tube


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPW50R190CEFKSA1
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 745
  • Description: Trans MOSFET N-CH 500V 18.5A 3-Pin(3+Tab) TO-247 Tube (Kg)

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
RoHS Status RoHS Compliant
Factory Lead Time 6 Weeks
Lead Free Lead Free
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
Series CoolMOS™
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Pin Count 3
Number of Elements 1
Power Dissipation-Max 127W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 127W
Turn On Delay Time 9.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 190m Ω @ 6.2A, 13V
Vgs(th) (Max) @ Id 3.5V @ 510μA
Input Capacitance (Ciss) (Max) @ Vds 1137pF @ 100V
Current - Continuous Drain (Id) @ 25°C 18.5A Tc
Gate Charge (Qg) (Max) @ Vgs 47.2nC @ 10V
Rise Time 8.5ns
Drive Voltage (Max Rds On,Min Rds On) 13V
Vgs (Max) ±20V
Fall Time (Typ) 7.5 ns
Turn-Off Delay Time 54 ns
Continuous Drain Current (ID) 18.5A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 500V
FET Feature Super Junction
Radiation Hardening No
See Relate Datesheet