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    Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Lead Pitch Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Max Power Dissipation Reference Standard Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Drain to Source Resistance Supplier Device Package Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage FET Feature Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
    AUIRLZ24NS AUIRLZ24NS Infineon Technologies $0.00
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    		 download 13 Weeks Surface Mount Tube 2015 HEXFET® Obsolete 1 (Unlimited) EAR99 ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 3.8W Ta 45W Tc 18A N-Channel 60m Ω @ 11A, 10V 2V @ 250μA 480pF @ 25V 15nC @ 5V 18A Tc 55V 4V 10V ±16V
    IPD60R750E6ATMA1 IPD60R750E6ATMA1 Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2011 CoolMOS™ E6 Obsolete 1 (Unlimited) 150°C -55°C RoHS Compliant 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount 3.949996g -55°C~150°C TJ MOSFET (Metal Oxide) 1 9 ns 600V 680mOhm PG-TO252-3 48W Tc 5.7A 50 ns N-Channel 750mOhm @ 2A, 10V 3.5V @ 170μA 373pF @ 100V 17.2nC @ 10V 7ns 12 ns 20V 5.7A Tc 600V 373pF 10V ±20V 750 mΩ
    IPP100N04S204AKSA2 IPP100N04S204AKSA2 Infineon Technologies $0.00
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    		 download Through Hole Tube 2006 OptiMOS™ Obsolete 1 (Unlimited) 3 RoHS Compliant Contains Lead AVALANCHE RATED TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED R-PSFM-T3 1 SINGLE WITH BUILT-IN DIODE TO-220AB 40V 300W Tc 100A 0.0036Ohm SILICON N-Channel 3.6m Ω @ 80A, 10V 4V @ 250μA 5300pF @ 25V 172nC @ 10V 100A Tc 400A 810 mJ 10V ±20V
    IPD60R520C6ATMA1 IPD60R520C6ATMA1 Infineon Technologies $0.00
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    		 download 12 Weeks Tape & Reel (TR) 2008 CoolMOS™ C6 Obsolete 1 (Unlimited) 2 RoHS Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING YES R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE DRAIN 66W Tc SWITCHING 0.52Ohm 600V SILICON N-Channel 520m Ω @ 2.8A, 10V 3.5V @ 230μA 512pF @ 100V 23.4nC @ 10V 8.1A 8.1A Tc 600V 22A 153 mJ 10V ±20V
    IPP80N04S2H4AKSA2 IPP80N04S2H4AKSA2 Infineon Technologies $0.00
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    		 Through Hole Tube 2008 OptiMOS™ Obsolete 1 (Unlimited) 3 RoHS Compliant AVALANCHE RATED TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE R-PSFM-T3 1 SINGLE WITH BUILT-IN DIODE TO-220AB 300W Tc 80A 0.004Ohm 40V SILICON N-Channel 4m Ω @ 80A, 10V 4V @ 250μA 4400pF @ 25V 148nC @ 10V 80A Tc 40V 320A 660 mJ 10V ±20V
    IPP60R330P6XKSA1 IPP60R330P6XKSA1 Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2008 CoolMOS™ P6 Obsolete 1 (Unlimited) 150°C -55°C RoHS Compliant Lead Free 3 TO-220-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) Halogen Free 12 ns 600V 297mOhm PG-TO220-3 93W Tc 12A 33 ns N-Channel 330mOhm @ 4.5A, 10V 4.5V @ 370μA 1010pF @ 100V 22nC @ 10V 7ns 20V 12A Tc 600V 1.01nF 10V ±20V 330 mΩ
    IPU60R2K0C6AKMA1 IPU60R2K0C6AKMA1 Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2008 CoolMOS™ yes Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant TO-251-3 Short Leads, IPak, TO-251AA Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED R-PSIP-T3 1 SINGLE WITH BUILT-IN DIODE 600V 22.3W Tc 2.4A SWITCHING 2Ohm SILICON N-Channel 2 Ω @ 760mA, 10V 3.5V @ 60μA 140pF @ 100V 6.7nC @ 10V 2.4A Tc 6A 11 mJ 10V ±20V
    AUIRLS4030-7P AUIRLS4030-7P Infineon Technologies $0.00
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    		 download Surface Mount Tube 2009 Automotive, AEC-Q101, HEXFET® Discontinued 1 (Unlimited) 6 EAR99 10.67mm ROHS3 Compliant Lead Free Tin No 7 AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY TO-263-7, D2Pak (6 Leads + Tab) No SVHC 4.83mm 9.65mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 SINGLE GULL WING 260 30 R-PSSO-G6 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 370W 53 ns 1V 370W Tc 190A SWITCHING 0.0039Ohm 110 ns SILICON N-Channel 3.9m Ω @ 110A, 10V 2.5V @ 250μA 11490pF @ 50V 140nC @ 4.5V 160ns 87 ns 16V 100V 190A Tc 320 mJ 4.5V 10V ±16V
    AUIRLU3110Z AUIRLU3110Z Infineon Technologies $0.00
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    		 download 11 Weeks Through Hole Tube 2009 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 6.73mm RoHS Compliant Tin No 3 ULTRA-LOW RESISTANCE TO-251-3 Short Leads, IPak, TO-251AA No SVHC 2.39mm 6.22mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 260 30 FET General Purpose Power 1 DRAIN Single 140W 24 ns 1V 140W Tc 63A SWITCHING 33 ns SILICON N-Channel 14m Ω @ 38A, 10V 2.5V @ 100μA 3980pF @ 25V 48nC @ 4.5V 110ns 48 ns 16V 100V 1 V 42A 42A Tc 250A
    IPW50R280CEFKSA1 IPW50R280CEFKSA1 Infineon Technologies $0.00
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    		 download 52 Weeks Through Hole Tube 2008 CoolMOS™ yes Obsolete 1 (Unlimited) 3 RoHS Compliant Lead Free 3 TO-247-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 1 SINGLE WITH BUILT-IN DIODE 8 ns 500V 92W Tc 13A SWITCHING 0.28Ohm 40 ns SILICON N-Channel 280m Ω @ 4.2A, 13V 3.5V @ 350μA 773pF @ 100V 32.6nC @ 10V 6.4ns 7.6 ns 20V Super Junction 13A Tc 42.9A 13V ±20V
    IPP50R500CEXKSA1 IPP50R500CEXKSA1 Infineon Technologies $0.00
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    		 download Tube 2008 CoolMOS™ yes Obsolete 1 (Unlimited) 3 150°C -55°C 10.36mm RoHS Compliant 3 TO-220-3 15.95mm 4.57mm Through Hole MOSFET (Metal Oxide) ENHANCEMENT MODE NOT SPECIFIED NOT SPECIFIED 3 NO 57W 1 TO-220AB Halogen Free Single 57W 6 ns 7.6A SWITCHING 0.5Ohm 30 ns N-Channel 500m Ω @ 2.3A, 13V 3.5V @ 200μA 433pF @ 100V 18.7nC @ 10V 5ns 12 ns 20V 500V Super Junction 7.6A Tc 24A 129 mJ 13V ±20V
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    		 download 6 Weeks Tube 2008 CoolMOS™ yes Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant TO-220-3 Full Pack compliant Through Hole -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED 26.4W Tc SWITCHING 0.8Ohm 500V SILICON N-Channel 800m Ω @ 1.5A, 13V 3.5V @ 130μA 280pF @ 100V 12.4nC @ 10V Super Junction 5A Tc 500V 15.5A 83 mJ 13V ±20V
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    		 download Surface Mount Tube 2005 HEXFET®, StrongIRFET™ Discontinued 1 (Unlimited) EAR99 10.67mm ROHS3 Compliant Lead Free No 7 TO-263-8, D2Pak (7 Leads + Tab), TO-263CA No SVHC 4.83mm 9.65mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) FET General Purpose Power 1 Single 231W 18 ns 2.2V 231W Tc 37 ns 195A 78 ns N-Channel 1.4m Ω @ 100A, 10V 3.9V @ 150μA 7437pF @ 25V 225nC @ 10V 62ns 51 ns 20V 195A Tc 40V 6V 10V ±20V
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    		 download 20 Weeks Surface Mount Tube 2012 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 6.73mm ROHS3 Compliant Lead Free No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.39mm 6.22mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING R-PSSO-G2 FET General Purpose Power 1 TO-252AA DRAIN Single 140W 11 ns 3V 140W Tc 34 ns 90A SWITCHING 0.0024Ohm 51 ns SILICON N-Channel 2.4m Ω @ 90A, 10V 3.9V @ 100μA 4610pF @ 25V 134nC @ 10V 39ns 34 ns 20V 40V 3 V 90A Tc 760A 6V 10V ±20V
    IPA50R650CE IPA50R650CE Infineon Technologies $0.00
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    		 download Tube 2013 CoolMOS™ yes Obsolete 1 (Unlimited) 3 RoHS Compliant TO-220-3 Full Pack compliant Through Hole -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED 27.2W Tc SWITCHING 0.65Ohm 500V SILICON N-Channel 650m Ω @ 1.8A, 13V 3.5V @ 150μA 342pF @ 100V 15nC @ 10V Super Junction 6.1A 6.1A Tc 500V 19A 102 mJ 13V ±20V
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    		 download Surface Mount Tube 2012 HEXFET® Discontinued 1 (Unlimited) 8 EAR99 5mm ROHS3 Compliant Lead Free No 8 8-SOIC (0.154, 3.90mm Width) No SVHC 1.5mm 4mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) DUAL GULL WING FET General Purpose Power 1 Single 2.5W 7.1 ns 4V 2.5W Ta 3.7A SWITCHING 14 ns SILICON N-Channel 78m Ω @ 2.2A, 10V 5V @ 100μA 1750pF @ 100V 44nC @ 10V 3.2ns 12 ns 20V 200V 4 V 3.7A Ta 10V ±20V
    IPW50R190CEFKSA1 IPW50R190CEFKSA1 Infineon Technologies $0.00
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    		 download 6 Weeks Through Hole Tube 2000 CoolMOS™ yes Obsolete 1 (Unlimited) 3 RoHS Compliant Lead Free No 3 TO-247-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 3 FET General Purpose Power 1 Single 127W 9.5 ns 500V 127W Tc 18.5A SWITCHING 54 ns SILICON N-Channel 190m Ω @ 6.2A, 13V 3.5V @ 510μA 1137pF @ 100V 47.2nC @ 10V 8.5ns 7.5 ns 20V Super Junction 18.5A Tc 13V ±20V
    IPD50R650CEBTMA1 IPD50R650CEBTMA1 Infineon Technologies $0.00
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    		 download Tape & Reel (TR) 2017 CoolMOS™ no Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PSSO-G2 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 47W Tc SWITCHING 0.65Ohm 500V SILICON N-Channel 650m Ω @ 1.8A, 13V 3.5V @ 150μA 342pF @ 100V 15nC @ 10V 6.1A 6.1A Tc 500V 19A 102 mJ 13V ±20V
    IRFB7446GPBF IRFB7446GPBF Infineon Technologies $0.00
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    		 download 14 Weeks Through Hole Tube 2013 HEXFET®, StrongIRFET™ Obsolete 1 (Unlimited) EAR99 ROHS3 Compliant 3 TO-220-3 Through Hole MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 99W Tc 120A N-Channel 3.3m Ω @ 70A, 10V 3.9V @ 100μA 3183pF @ 25V 93nC @ 10V 120A Tc 40V 6V 10V ±20V
    AUIRF4905S AUIRF4905S Infineon Technologies $0.00
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    		 download 16 Weeks Tube 1997 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PSSO-G2 Other Transistors AEC-Q101 1 SINGLE WITH BUILT-IN DIODE DRAIN 200W Tc SWITCHING 0.02Ohm 55V SILICON P-Channel 20m Ω @ 42A, 10V 4V @ 250μA 3500pF @ 25V 180nC @ 10V 42A 42A Tc 55V 280A 140 mJ 10V ±20V
    IPD30N06S2L-13 IPD30N06S2L-13 Infineon Technologies $0.00
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    		 download Tape & Reel (TR) 2006 OptiMOS™ yes Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant LOGIC LEVEL COMPATIBLE TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 136W Tc SWITCHING 0.017Ohm 55V SILICON N-Channel 13m Ω @ 30A, 10V 2V @ 80μA 1800pF @ 25V 69nC @ 10V 30A 30A Tc 55V 200A 240 mJ 4.5V 10V ±20V
    IRFH5206TRPBF IRFH5206TRPBF Infineon Technologies $0.00
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    		 download Surface Mount Tape & Reel (TR) 2007 HEXFET® Obsolete 1 (Unlimited) 5 EAR99 5.9944mm RoHS Compliant Lead Free No 8 8-PowerVDFN No SVHC 838.2μm 5mm 6.7MOhm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL 260 30 R-PDSO-N5 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.6W 6.4 ns 2V 3.6W Ta 100W Tc 89A SWITCHING 22 ns SILICON N-Channel 6.7m Ω @ 50A, 10V 4V @ 100μA 2490pF @ 25V 60nC @ 10V 11ns 8.2 ns 20V 60V 16A Ta 89A Tc 350A 10V ±20V
    IRFS7530-7PPBF IRFS7530-7PPBF Infineon Technologies $0.00
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    		 download 16 Weeks Surface Mount Tube 2008 HEXFET®, StrongIRFET™ Discontinued 1 (Unlimited) EAR99 ROHS3 Compliant Lead Free 7 TO-263-7, D2Pak (6 Leads + Tab) No SVHC Surface Mount 1.59999g -55°C~175°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 1 FET General Purpose Power Single 375W 24 ns 3.7V 375W Tc 240A 168 ns N-Channel 1.4m Ω @ 100A, 10V 3.7V @ 250μA 12960pF @ 25V 354nC @ 10V 102ns 79 ns 3.7V 240A Tc 60V 6V 10V ±20V
    IRFS7530PBF IRFS7530PBF Infineon Technologies $0.00
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    		 download 14 Weeks Surface Mount Tube 2013 HEXFET®, StrongIRFET™ Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant Lead Free 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC Surface Mount 3.949996g -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 R-PSSO-G2 1 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 375W 52 ns 3.7V 375W Tc 195A SWITCHING 0.002Ohm 172 ns SILICON N-Channel 2m Ω @ 100A, 10V 3.7V @ 250μA 13703pF @ 25V 411nC @ 10V 141ns 104 ns 3.7V 60V 195A Tc 760A 6V 10V ±20V
    IRFS7534-7PPBF IRFS7534-7PPBF Infineon Technologies $0.00
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    		 download 16 Weeks Surface Mount Tube 2013 HEXFET®, StrongIRFET™ Discontinued 1 (Unlimited) 6 EAR99 ROHS3 Compliant Lead Free 7 TO-263-7, D2Pak (6 Leads + Tab) Surface Mount 1.59999g -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 R-PSSO-G6 1 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE TO-263CB DRAIN 290W 140 ns 290W Tc 240A SWITCHING 195 ns SILICON N-Channel 1.95m Ω @ 100A, 10V 3.7V @ 250μA 9990pF @ 25V 300nC @ 10V 120ns 86 ns 20V 60V 240A Tc 6V 10V ±20V
    IRFS7537PBF IRFS7537PBF Infineon Technologies $0.00
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    		 download Surface Mount Tube 2013 HEXFET®, StrongIRFET™ Discontinued 1 (Unlimited) EAR99 10.67mm ROHS3 Compliant Lead Free 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.83mm 9.65mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) Single 230W 15 ns 3.7V 230W Tc 173A 82 ns N-Channel 3.3m Ω @ 100A, 10V 3.7V @ 150μA 7020pF @ 25V 210nC @ 10V 105ns 84 ns 20V 173A Tc 60V 6V 10V ±20V
    IRLML6344TRPBF IRLML6344TRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2010 HEXFET® Active 1 (Unlimited) 3 EAR99 3.04mm ROHS3 Compliant Lead Free No 3 TO-236-3, SC-59, SOT-23-3 No SVHC 1.12mm 1.4mm 37MOhm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING 260 30 1 FET General Purpose Power 1 Single 1.3W 4.2 ns 800mV 1.3W Ta 15 ns 5A 150°C SWITCHING 22 ns SILICON N-Channel 29m Ω @ 5A, 4.5V 1.1V @ 10μA 650pF @ 25V 6.8nC @ 4.5V 5.6ns 9.1 ns 12V 30V 800 mV 5A 5A Ta 2.5V 4.5V ±12V
    IRFS4127TRLPBF IRFS4127TRLPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2008 HEXFET® Active 1 (Unlimited) 2 EAR99 10.668mm ROHS3 Compliant Lead Free 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 4.826mm 9.652mm 22MOhm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power Not Qualified 1 DRAIN Single 375W 17 ns 375W Tc 72A SWITCHING 56 ns SILICON N-Channel 22m Ω @ 44A, 10V 5V @ 250μA 5380pF @ 50V 150nC @ 10V 18ns 22 ns 20V 200V 72A Tc 250 mJ 10V ±20V
    IRF6218STRLPBF IRF6218STRLPBF Infineon Technologies $0.00
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    		 download 14 Weeks Surface Mount Tape & Reel (TR) 2004 HEXFET® Not For New Designs 1 (Unlimited) 2 EAR99 10.668mm ROHS3 Compliant Lead Free No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.572mm 9.65mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 Other Transistors 1 DRAIN Single 250W 21 ns -5V 250W Tc -150A SWITCHING 35 ns SILICON P-Channel 150m Ω @ 16A, 10V 5V @ 250μA 2210pF @ 25V 110nC @ 10V 70ns 30 ns 20V -150V -5 V 27A 27A Tc 150V 10V ±20V
    IRFP150NPBF IRFP150NPBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 1998 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 15.875mm ROHS3 Compliant Contains Lead, Lead Free 42A No 3 AVALANCHE RATED, HIGH RELIABILITY TO-247-3 No SVHC 5.45mm 24.99mm 5.3mm 36mOhm Through Hole -55°C~175°C TJ 100V MOSFET (Metal Oxide) ENHANCEMENT MODE 1 FET General Purpose Power 1 TO-247AC DRAIN Single 140W 11 ns 4V 160W Tc 270 ns 42A 175°C SWITCHING 45 ns SILICON N-Channel 36m Ω @ 23A, 10V 4V @ 250μA 1900pF @ 25V 110nC @ 10V 56ns 40 ns 20V 100V 100V 4 V 42A Tc 420 mJ 10V ±20V