All Products
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Connectors
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Capacitors
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RF/IF & RFID
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- Filters
Vishay Siliconix(2369)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Technology | Operating Mode | Lead Length | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Max Power Dissipation | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Drain to Source Resistance | Supplier Device Package | Power Dissipation-Max | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Feedback Cap-Max (Crss) | Input Capacitance | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Rds On Max | Turn Off Time-Max (toff) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SISS40DN-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2016 | ThunderFET® | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | No | 8 | PowerPAK® 1212-8S | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | S-PDSO-N5 | 1 | 1 | DRAIN | Single | 3.7W | 14 ns | 3.7W Ta 52W Tc | 36.5A | SWITCHING | 14 ns | SILICON | N-Channel | 21m Ω @ 10A, 10V | 3.5V @ 250μA | 845pF @ 50V | 24nC @ 10V | 5ns | 5 ns | 20V | 100V | 36.5A Tc | 60A | 20 mJ | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| SUD90330E-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Tape & Reel (TR) | ThunderFET® | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | unknown | 2.507mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | 1 | 125W | 12 ns | 125W Tc | 35.8A | 175°C | 30 ns | N-Channel | 37.5m Ω @ 12.2A, 10V | 4V @ 250μA | 1172pF @ 100V | 32nC @ 10V | 20V | 200V | 35.8A Tc | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4430BDY-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | TrenchFET® | Active | 1 (Unlimited) | 8 | EAR99 | 5mm | ROHS3 Compliant | No | 8 | 8-SOIC (0.154, 3.90mm Width) | Unknown | 1.55mm | 4mm | Surface Mount | 186.993455mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 30 | 8 | 1 | 1 | Single | 20 ns | 3V | 1.6W Ta | 20A | 0.0045Ohm | 60 ns | SILICON | N-Channel | 4.5m Ω @ 20A, 10V | 3V @ 250μA | 36nC @ 4.5V | 14ns | 14 ns | 20V | 30V | 14A Ta | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| SIR846ADP-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | Active | 1 (Unlimited) | 5 | EAR99 | 6.25mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | PowerPAK® SO-8 | Unknown | 1.12mm | 5.26mm | 9.5MOhm | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | C BEND | R-PDSO-C5 | 1 | FET General Purpose Powers | 1 | DRAIN | Single | 5.4W | 14 ns | 1.8V | 5.4W Ta 83W Tc | 60A | SWITCHING | 28 ns | SILICON | N-Channel | 7.8m Ω @ 20A, 10V | 3V @ 250μA | 2350pF @ 50V | 66nC @ 10V | 20V | 100V | 60A Tc | 200A | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IRFU014PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2011 | yes | Active | 1 (Unlimited) | 3 | EAR99 | 6.73mm | ROHS3 Compliant | Lead Free | No | 3 | TO-251-3 Short Leads, IPak, TO-251AA | Unknown | 6.22mm | 2.39mm | 200mOhm | Through Hole | 329.988449mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 9.65mm | 260 | 40 | 3 | 1 | 1 | DRAIN | Single | 2.5W | 10 ns | 4V | 2.5W Ta 25W Tc | 7.7A | SWITCHING | 60V | 13 ns | SILICON | N-Channel | 200m Ω @ 4.6A, 10V | 4V @ 250μA | 300pF @ 25V | 11nC @ 10V | 50ns | 19 ns | 20V | 7.7A Tc | 60V | 27.4 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IRF640STRLPBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Surface Mount, Through Hole | Tape & Reel (TR) | 2015 | Active | 1 (Unlimited) | 2 | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | Tin | No | 3 | AVALANCHE RATED | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.83mm | 9.65mm | 180mOhm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | 260 | 40 | 4 | R-PSSO-G2 | 1 | 1 | DRAIN | Single | 130W | 14 ns | 3.1W Ta 130W Tc | 18A | SWITCHING | 45 ns | SILICON | N-Channel | 180m Ω @ 11A, 10V | 4V @ 250μA | 1300pF @ 25V | 70nC @ 10V | 51ns | 36 ns | 20V | 200V | 18A Tc | 72A | 580 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||
| SIR166DP-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | TrenchFET® | yes | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Lead Free | No | 8 | PowerPAK® SO-8 | Unknown | 4MOhm | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN | DUAL | C BEND | 260 | 40 | 8 | R-XDSO-C5 | 1 | FET General Purpose Power | 1 | DRAIN | Single | 5W | 28 ns | 1.2V | 5W Ta 48W Tc | 40A | SWITCHING | 44 ns | SILICON | N-Channel | 3.2m Ω @ 15A, 10V | 2.2V @ 250μA | 3340pF @ 15V | 77nC @ 10V | 21ns | 16 ns | 20V | 30V | 1.2 V | 40A Tc | 70A | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
| SI7108DN-T1-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | TrenchFET® | yes | Active | 1 (Unlimited) | 5 | EAR99 | 3.05mm | ROHS3 Compliant | Lead Free | No | 8 | ULTRA-LOW RESISTANCE | PowerPAK® 1212-8 | 1.04mm | 3.05mm | 4.9mOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 30 | 8 | S-XDSO-C5 | 1 | FET General Purpose Power | 1 | DRAIN | Single | 1.5W | 10 ns | 1.5W Ta | 22A | SWITCHING | 60 ns | SILICON | N-Channel | 4.9m Ω @ 22A, 10V | 2V @ 250μA | 30nC @ 4.5V | 10ns | 10 ns | 16V | 20V | 2 V | 14A Ta | 60A | 24 mJ | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||
| SI4896DY-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2014 | TrenchFET® | yes | Active | 1 (Unlimited) | 8 | EAR99 | ROHS3 Compliant | Lead Free | 8 | 8-SOIC (0.154, 3.90mm Width) | No SVHC | unknown | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | 8 | 1 | FET General Purpose Power | Not Qualified | 1 | Single | 1.56W | 17 ns | 2V | 1.56W Ta | 6.7A | 40 ns | SILICON | N-Channel | 16.5m Ω @ 10A, 10V | 2V @ 250μA (Min) | 41nC @ 10V | 11ns | 31 ns | 20V | 6.7A Ta | 80V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| SQ3418AEEV-T1_GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tape & Reel (TR) | TrenchFET® | Active | 1 (Unlimited) | 6 | EAR99 | ROHS3 Compliant | SOT-23-6 Thin, TSOT-23-6 | unknown | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PDSO-G6 | 1 | SINGLE WITH BUILT-IN DIODE | 4W Tc | 0.032Ohm | 40V | SILICON | N-Channel | 35m Ω @ 6A, 10V | 2.5V @ 250μA | 370pF @ 15V | 10nC @ 10V | 8A | 7.8A Tc | 30V | 62 pF | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SIB417EDK-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2016 | TrenchFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 1.6mm | ROHS3 Compliant | No | 6 | PowerPAK® SC-75-6L | Unknown | 750μm | 1.6mm | Surface Mount | 95.991485mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | 260 | 40 | 6 | S-XDSO-N3 | 1 | Other Transistors | 1 | DRAIN | Single | 2.4W | 12 ns | -1V | 2.4W Ta 13W Tc | -9A | SWITCHING | 0.058Ohm | 8V | 30 ns | SILICON | P-Channel | 58m Ω @ 5.8A, 4.5V | 1V @ 250μA | 565pF @ 4V | 12nC @ 5V | 31ns | 17 ns | 5V | -1 V | 5.8A | 9A Tc | 8V | 1.2V 4.5V | ±5V | ||||||||||||||||||||||||||||
| IRFR214TRRPBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2015 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 6.73mm | ROHS3 Compliant | No | 3 | AVALANCHE RATED | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.39mm | 6.22mm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | GULL WING | 260 | 30 | 3 | R-PSSO-G2 | 1 | FET General Purpose Power | 1 | TO-252AA | DRAIN | Single | 7 ns | 2.5W Ta 25W Tc | 2.2A | SWITCHING | 2Ohm | 250V | 16 ns | SILICON | N-Channel | 2 Ω @ 1.3A, 10V | 4V @ 250μA | 140pF @ 25V | 8.2nC @ 10V | 7.6ns | 7 ns | 20V | 2.2A Tc | 250V | 8.8A | 10V | ±20V | |||||||||||||||||||||||||||||||
| SUP57N20-33-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Through Hole | Tube | 2009 | TrenchFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.41mm | ROHS3 Compliant | Lead Free | No | 3 | TO-220-3 | No SVHC | 9.01mm | 4.7mm | 33mOhm | Through Hole | 6.000006g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | 30 | 3 | 1 | FET General Purpose Power | 1 | TO-220AB | DRAIN | Single | 3.75W | 24 ns | 4V | 3.75W Ta 300W Tc | 57A | SWITCHING | 45 ns | SILICON | N-Channel | 33m Ω @ 30A, 10V | 4V @ 250μA | 5100pF @ 25V | 130nC @ 10V | 220ns | 200 ns | 20V | 200V | 57A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||
| SI4430BDY-T1-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2005 | TrenchFET® | Active | 1 (Unlimited) | 8 | EAR99 | 5mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | 8-SOIC (0.154, 3.90mm Width) | Unknown | 1.55mm | 4mm | 4.5mOhm | Surface Mount | 186.993455mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 260 | 40 | 8 | 1 | 1 | Single | 1.6W | 20 ns | 1V | 1.6W Ta | 14A | 30V | 60 ns | SILICON | N-Channel | 4.5m Ω @ 20A, 10V | 3V @ 250μA | 36nC @ 4.5V | 14ns | 14 ns | 20V | 14A Ta | 30V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| SI8481DB-T1-E1 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 21 Weeks | Tape & Reel (TR) | TrenchFET® Gen III | Active | 1 (Unlimited) | 4 | EAR99 | ROHS3 Compliant | 4-UFBGA | 600μm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | BOTTOM | BALL | 260 | 30 | YES | S-PBGA-B4 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | 1.1W | 16 ns | 2.8W Tc | -6.2A | 150°C | SWITCHING | 0.025Ohm | 300 ns | SILICON | P-Channel | 21m Ω @ 3A, 4.5V | 900mV @ 250μA | 2500pF @ 10V | 47nC @ 4.5V | 8V | -20V | 9.7A Tc | 20V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||
| SI7806ADN-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | TrenchFET® | yes | Active | 1 (Unlimited) | 5 | EAR99 | 3.05mm | ROHS3 Compliant | No | 8 | PowerPAK® 1212-8 | 1.04mm | 3.05mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 30 | 8 | S-XDSO-C5 | 1 | FET General Purpose Power | 1 | DRAIN | Single | 1.5W | 13 ns | 1.5W Ta | 14A | SWITCHING | 33 ns | SILICON | N-Channel | 11m Ω @ 14A, 10V | 3V @ 250μA | 20nC @ 5V | 10ns | 10 ns | 20V | 30V | 9A | 9A Ta | 40A | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| SI2301CDS-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | TrenchFET® | Active | 1 (Unlimited) | 150°C | -55°C | 3.04mm | ROHS3 Compliant | Lead Free | Tin | No | 3 | TO-236-3, SC-59, SOT-23-3 | No SVHC | 1.12mm | 1.4mm | 112mOhm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | 1 | 1 | Single | 1.6W | 11 ns | -1V | 90mOhm | SOT-23-3 (TO-236) | 860mW Ta 1.6W Tc | -3.1A | 150°C | 30 ns | P-Channel | 112mOhm @ 2.8A, 4.5V | 1V @ 250μA | 405pF @ 10V | 10nC @ 4.5V | 35ns | 35 ns | 8V | -20V | -400 mV | 3.1A Tc | 20V | 405pF | 2.5V 4.5V | ±8V | 112 mΩ | |||||||||||||||||||||||||||||||||||
| SIHP12N65E-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 2016 | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | No | 3 | TO-220-3 | Through Hole | 6.000006g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 1 | 1 | TO-220AB | Single | 156W | 16 ns | 156W Tc | 12A | SWITCHING | 35 ns | SILICON | N-Channel | 380m Ω @ 6A, 10V | 4V @ 250μA | 1224pF @ 100V | 70nC @ 10V | 19ns | 18 ns | 20V | 700V | 12A Tc | 650V | 28A | 226 mJ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| SI7153DN-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Tape & Reel (TR) | Active | 1 (Unlimited) | EAR99 | RoHS Compliant | PowerPAK® 1212-8 | 9.5mOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 52W Tc | P-Channel | 9.5m Ω @ 20A, 10V | 2.5V @ 250μA | 3600pF @ 15V | 93nC @ 10V | 18A Tc | 30V | 4.5V 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA477EDJ-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2014 | TrenchFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | No | PowerPAK® SC-70-6 | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | S-PDSO-N3 | 19W | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 12A | SWITCHING | 0.014Ohm | 12V | SILICON | P-Channel | 14m Ω @ 7A, 4.5V | 1V @ 250μA | 2970pF @ 6V | 87nC @ 8V | 8V | 12A Tc | 12V | 40A | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2314EDS-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2015 | TrenchFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | No | 3 | TO-236-3, SC-59, SOT-23-3 | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | 3 | 1 | FET General Purpose Powers | 1 | Single | 750mW | 530 ns | 750mW Ta | 3.77A | SWITCHING | 20V | 13.5 μs | SILICON | N-Channel | 33m Ω @ 5A, 4.5V | 950mV @ 250μA | 14nC @ 4.5V | 1.4μs | 5.9 μs | 12V | 3.77A Ta | 20V | 1.8V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||
| SIS427EDN-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2016 | TrenchFET® | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | No | 8 | PowerPAK® 1212-8 | Unknown | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | C BEND | S-PDSO-C5 | 1 | 1 | DRAIN | Single | 45 ns | 3.7W Ta 52W Tc | -50A | SWITCHING | 28 ns | SILICON | P-Channel | 10.6m Ω @ 11A, 10V | 2.5V @ 250μA | 1930pF @ 15V | 66nC @ 10V | 40ns | 12 ns | 25V | -30V | 50A Tc | 30V | 4.5V 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||
| SQJ457EP-T1_GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tape & Reel (TR) | Automotive, AEC-Q101, TrenchFET® | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | PowerPAK® SO-8 | unknown | 1.267mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 1 | 68W | 15 ns | 68W Tc | -36A | 175°C | 40 ns | P-Channel | 25m Ω @ 10A, 10V | 2.5V @ 250μA | 3400pF @ 25V | 100nC @ 10V | 20V | -60V | 36A Tc | 60V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR462DP-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | TrenchFET® | yes | Active | 1 (Unlimited) | 5 | EAR99 | 4.9mm | ROHS3 Compliant | Lead Free | No | 8 | PowerPAK® SO-8 | Unknown | 1.04mm | 5.89mm | 7.9mOhm | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 40 | 8 | R-XDSO-C5 | 1 | FET General Purpose Powers | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 4.8W | 20 ns | 3V | 4.8W Ta 41.7W Tc | 30A | SWITCHING | 30V | 25 ns | SILICON | N-Channel | 7.9m Ω @ 20A, 10V | 3V @ 250μA | 1155pF @ 15V | 30nC @ 10V | 15ns | 10 ns | 20V | 3 V | 30A Tc | 30V | 70A | 4.5V 10V | ±20V | ||||||||||||||||||||||||||
| SQJ479EP-T1_GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tape & Reel (TR) | Automotive, AEC-Q101, TrenchFET® | Active | 1 (Unlimited) | 4 | EAR99 | ROHS3 Compliant | PowerPAK® SO-8 | unknown | 1.267mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PSSO-G4 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 68W | 15 ns | 68W Tc | -32A | 175°C | 0.033Ohm | 50 ns | SILICON | P-Channel | 33m Ω @ 10A, 10V | 2.5V @ 250μA | 4500pF @ 25V | 150nC @ 10V | 20V | -80V | 32A Tc | 80V | 80 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| SQJ459EP-T1_GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tape & Reel (TR) | 2017 | Automotive, AEC-Q101, TrenchFET® | Active | 1 (Unlimited) | 4 | EAR99 | ROHS3 Compliant | PowerPAK® SO-8 | unknown | 1.267mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PSSO-G4 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 83W | 12 ns | 83W Tc | -52A | 175°C | 88 ns | SILICON | P-Channel | 18m Ω @ 3.5A, 10V | 2.5V @ 250μA | 4586pF @ 30V | 108nC @ 10V | 20V | -60V | 52A Tc | 60V | 200A | 80 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| SI4840BDY-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | yes | Active | 1 (Unlimited) | 8 | EAR99 | 5mm | ROHS3 Compliant | Lead Free | No | 8 | 8-SOIC (0.154, 3.90mm Width) | Unknown | 1.75mm | 4mm | 9mOhm | Surface Mount | 186.993455mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 40 | 8 | 1 | FET General Purpose Powers | 1 | Single | 2.5W | 10 ns | 1V | 2.5W Ta 6W Tc | 12.4A | 150°C | SWITCHING | 30 ns | SILICON | N-Channel | 9m Ω @ 12.4A, 10V | 3V @ 250μA | 2000pF @ 20V | 50nC @ 10V | 12ns | 10 ns | 20V | 40V | 1 V | 19A Tc | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||
| SIHP8N50D-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Through Hole | Tube | 2011 | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | No | 3 | TO-220-3 | Through Hole | 6.000006g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 1 | FET General Purpose Powers | 1 | TO-220AB | Single | 13 ns | 156W Tc | 8.7A | SWITCHING | 0.85Ohm | 17 ns | SILICON | N-Channel | 850m Ω @ 4A, 10V | 5V @ 250μA | 527pF @ 100V | 30nC @ 10V | 16ns | 11 ns | 5V | 500V | 8.7A Tc | 29 mJ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| SUM60N10-17-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2015 | TrenchFET® | yes | Active | 1 (Unlimited) | 2 | EAR99 | 10.41mm | ROHS3 Compliant | Lead Free | Tin | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.83mm | 9.65mm | 16.5mOhm | Surface Mount | 1.437803g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 4 | R-PSSO-G2 | 1 | 1 | DRAIN | Single | 3.75W | 15 ns | 3.75W Ta 150W Tc | 60A | SWITCHING | 30 ns | SILICON | N-Channel | 16.5m Ω @ 30A, 10V | 4V @ 250μA | 4300pF @ 25V | 100nC @ 10V | 12ns | 10 ns | 20V | 100V | 60A Tc | 80 mJ | 6V 10V | ±20V | 60ns | |||||||||||||||||||||||||||||||||
| SUD50P10-43L-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 1995 | TrenchFET® | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Lead Free | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 260 | 30 | R-PSSO-G2 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 6.9W | 8.3W Ta 136W Tc | 37.1A | SILICON | P-Channel | 43m Ω @ 9.2A, 10V | 3V @ 250μA | 4600pF @ 50V | 160nC @ 10V | 20V | 100V | 37.1A Tc | 40A | 4.5V 10V | ±20V |