All Products
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RF/IF & RFID
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Vishay Siliconix(2369)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Lead Pitch | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Voltage | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Row Spacing | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Drain to Source Resistance | Supplier Device Package | Power Dissipation-Max | Recovery Time | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Input Capacitance | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Rds On Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SI1032R-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | TrenchFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 1.58mm | ROHS3 Compliant | Lead Free | Tin | No | 3 | LOW THRESHOLD | SC-75A | Unknown | 700μm | 760μm | 5Ohm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 260 | 30 | 3 | 1 | FET General Purpose Power | 1 | Single | 250mW | 50 ns | 900mV | 250mW Ta | 200mA | SWITCHING | 50 ns | SILICON | N-Channel | 5 Ω @ 200mA, 4.5V | 1.2V @ 250μA | 0.75nC @ 4.5V | 25ns | 25 ns | 6V | 20V | 140mA Ta | 1.5V 4.5V | ±6V | |||||||||||||||||||||||||||||||||||||
| SI1012R-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | TrenchFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 1.58mm | ROHS3 Compliant | Lead Free | No | 3 | LOW THRESHOLD | SC-75A | No SVHC | 800μm | 760μm | 700MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | 3 | 1 | FET General Purpose Power | 1 | Single | 150mW | 5 ns | 800mV | 150mW Ta | 600mA | 150°C | SWITCHING | 25 ns | SILICON | N-Channel | 700m Ω @ 600mA, 4.5V | 900mV @ 250μA | 0.75nC @ 4.5V | 5ns | 5 ns | 6V | 20V | 0.5A | 500mA Ta | 1.8V 4.5V | ±6V | |||||||||||||||||||||||||||||||||||
| SI1077X-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2014 | TrenchFET® | Active | 1 (Unlimited) | 6 | EAR99 | ROHS3 Compliant | Lead Free | Tin | No | 6 | SOT-563, SOT-666 | No SVHC | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | FLAT | 260 | 30 | 1 | SINGLE WITH BUILT-IN DIODE | -1V | 330mW Ta | 1.75A | SWITCHING | 0.078Ohm | 20V | SILICON | P-Channel | 78m Ω @ 1.8A, 4.5V | 1V @ 250μA | 965pF @ 10V | 31.1nC @ 8V | 8V | 20V | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||
| SI3456DDV-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | yes | Active | 1 (Unlimited) | 6 | EAR99 | ROHS3 Compliant | Lead Free | No | 6 | SOT-23-6 Thin, TSOT-23-6 | No SVHC | 40mOhm | Surface Mount | 19.986414mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | 6 | 1 | FET General Purpose Power | 1 | Single | 1.7W | 12 ns | 1.2V | 1.7W Ta 2.7W Tc | 5A | SWITCHING | 16 ns | SILICON | N-Channel | 40m Ω @ 5A, 10V | 3V @ 250μA | 325pF @ 15V | 9nC @ 10V | 13ns | 13 ns | 20V | 30V | 5A | 6.3A Tc | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SI2374DS-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2017 | TrenchFET® | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-236-3, SC-59, SOT-23-3 | No SVHC | 1.12mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN | DUAL | GULL WING | 260 | 30 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | 960mW | 10 ns | 1V | 960mW Ta 1.7W Tc | 4.5A | 150°C | SWITCHING | 16 ns | SILICON | N-Channel | 30m Ω @ 4A, 4.5V | 1V @ 250μA | 735pF @ 10V | 20nC @ 10V | 22ns | 9 ns | 8V | 20V | 5.9A | 4.5A Ta 5.9A Tc | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||
| SISA18ADN-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | No | 8 | PowerPAK® 1212-8 | Unknown | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | C BEND | S-PDSO-C5 | FET General Purpose Power | 1 | DRAIN | Single | 19.8W | 1.2V | 3.2W Ta 19.8W Tc | 38.3A | SWITCHING | 0.0075Ohm | 15 ns | SILICON | N-Channel | 7.5m Ω @ 10A, 10V | 2.4V @ 250μA | 1000pF @ 15V | 21.5nC @ 10V | 10ns | 7 ns | -16V | 30V | 38.3A Tc | 70A | 5 mJ | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||||
| SIA446DJ-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2007 | ThunderFET® | Active | 1 (Unlimited) | 3 | EAR99 | 2.05mm | ROHS3 Compliant | 6 | PowerPAK® SC-70-6 | Unknown | 750μm | 2.05mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | SIA446 | S-PDSO-N3 | 1 | 1 | DRAIN | Single | 5 ns | 3.5V | 3.5W Ta 19W Tc | 7.7A | SWITCHING | 10 ns | SILICON | N-Channel | 177m Ω @ 3A, 10V | 3.5V @ 250μA | 230pF @ 75V | 8nC @ 10V | 13ns | 10 ns | 20V | 150V | 7.7A Tc | 2.5 mJ | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| SI2328DS-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 3.04mm | ROHS3 Compliant | Lead Free | Tin | No | 3 | TO-236-3, SC-59, SOT-23-3 | No SVHC | 1.02mm | 1.4mm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 260 | 30 | 3 | 1 | FET General Purpose Powers | 1 | Single | 730mW | 7 ns | 4V | 730mW Ta | 1.15A | 0.25Ohm | 9 ns | SILICON | N-Channel | 250m Ω @ 1.5A, 10V | 4V @ 250μA | 5nC @ 10V | 11ns | 10 ns | 20V | 1.15A Ta | 100V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SI3473CDV-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2015 | TrenchFET® | yes | Active | 1 (Unlimited) | 6 | EAR99 | 3.05mm | ROHS3 Compliant | No | 6 | SOT-23-6 Thin, TSOT-23-6 | 1mm | 1.65mm | Surface Mount | 19.986414mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | 6 | 1 | Other Transistors | 1 | Single | 2W | 10 ns | 2W Ta 4.2W Tc | 8A | SWITCHING | 0.022Ohm | 62 ns | SILICON | P-Channel | 22m Ω @ 8.1A, 4.5V | 1V @ 250μA | 2010pF @ 6V | 65nC @ 8V | 15ns | 35 ns | 8V | -12V | 8A | 8A Tc | 12V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||
| SI7322ADN-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Tape & Reel (TR) | ThunderFET® | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | PowerPAK® 1212-8 | 1.17mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 1 | 3.3W | 6 ns | 26W Tc | 5.4A | 150°C | 9 ns | N-Channel | 57m Ω @ 5.5A, 10V | 4V @ 250μA | 360pF @ 50V | 13nC @ 10V | 20V | 100V | 15.1A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA437DJ-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Cut Tape (CT) | 2013 | TrenchFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | No | 6 | PowerPAK® SC-70-6 | Unknown | Surface Mount | -50°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | S-PDSO-N3 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 3.5W | -400mV | 3.5W Ta 19W Tc | 12.6A | SWITCHING | 20V | SILICON | P-Channel | 14.5m Ω @ 8A, 4.5V | 900mV @ 250μA | 2340pF @ 10V | 90nC @ 8V | 8V | 29.7A | 29.7A Tc | 20V | 1.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJA86EP-T1_GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Tape & Reel (TR) | Automotive, AEC-Q101, TrenchFET® | Active | 1 (Unlimited) | 4 | ROHS3 Compliant | PowerPAK® SO-8 | unknown | 1.267mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | 260 | NOT SPECIFIED | YES | R-PSSO-G4 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 48W | 10 ns | 48W Tc | 30A | 175°C | 23 ns | SILICON | N-Channel | 19m Ω @ 8A, 10V | 2.5V @ 250μA | 1400pF @ 25V | 32nC @ 10V | 20V | 80V | 30A Tc | 84A | 20 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| SQSA80ENW-T1_GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Tape & Reel (TR) | Automotive, AEC-Q101, TrenchFET® | Active | 1 (Unlimited) | 5 | ROHS3 Compliant | PowerPAK® 1212-8 | unknown | 1.17mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | YES | S-PDSO-F5 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 62.5W | 9 ns | 62.5W Tc | 18A | 175°C | 0.027Ohm | 19 ns | SILICON | N-Channel | 21m Ω @ 10A, 10V | 2.5V @ 250μA | 1358pF @ 40V | 21nC @ 10V | 20V | 80V | 18A Tc | 72A | 24.2 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SI7129DN-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | yes | Active | 1 (Unlimited) | 5 | EAR99 | 3.05mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | PowerPAK® 1212-8 | 1.04mm | 3.05mm | 11.4mOhm | Surface Mount | -50°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | C BEND | 260 | 40 | 8 | S-XDSO-C5 | 1 | Other Transistors | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 3.8W | 50 ns | 3.8W Ta 52.1W Tc | 14.4A | SWITCHING | 30V | 36 ns | SILICON | P-Channel | 11.4m Ω @ 14.4A, 10V | 2.8V @ 250μA | 3345pF @ 15V | 71nC @ 10V | 43ns | 14 ns | 20V | 35A | 35A Tc | 30V | 60A | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| SI7113DN-T1-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2015 | TrenchFET® | yes | Active | 1 (Unlimited) | 5 | EAR99 | 3.05mm | ROHS3 Compliant | Lead Free | No | 8 | PowerPAK® 1212-8 | 1.04mm | 3.05mm | 134MOhm | Surface Mount | -50°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | FLAT | 8 | S-PDSO-F5 | 1 | 1 | DRAIN | Single | 3.7W | 30 ns | 3.7W Ta 52W Tc | -13.2A | SWITCHING | 51 ns | SILICON | P-Channel | 134m Ω @ 4A, 10V | 3V @ 250μA | 1480pF @ 50V | 55nC @ 10V | 110ns | 40 ns | 20V | -100V | 13.2A Tc | 100V | 20A | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SQJ463EP-T1_GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2014 | Automotive, AEC-Q101, TrenchFET® | Active | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | No | 8 | PowerPAK® SO-8 | Unknown | Surface Mount | 506.605978mg | -55°C~175°C TJ | MOSFET (Metal Oxide) | 30A | 1 | 40V | 1 | Single | 83W | 21 ns | -2V | 10mOhm | PowerPAK® SO-8 | 83W Tc | -30A | 121 ns | P-Channel | 10mOhm @ 18A, 10V | 2.5V @ 250μA | 5875pF @ 20V | 150nC @ 10V | 17ns | 51 ns | 20V | -40V | 30A Tc | 40V | 5.875nF | 4.5V 10V | ±20V | 10 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||
| IRFS9N60APBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Surface Mount | Tube | 2014 | Active | 1 (Unlimited) | 150°C | -55°C | 10.67mm | ROHS3 Compliant | Lead Free | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Unknown | 4.83mm | 9.65mm | 750mOhm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | 1 | 1 | Single | 170W | 13 ns | 4V | 750mOhm | D2PAK | 170W Tc | 9.2A | 30 ns | N-Channel | 750mOhm @ 5.5A, 10V | 4V @ 250μA | 1400pF @ 25V | 49nC @ 10V | 25ns | 22 ns | 30V | 600V | 9.2A Tc | 600V | 1.4nF | 10V | ±30V | 750 mΩ | ||||||||||||||||||||||||||||||||||||||||||||
| SUP70101EL-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Tube | TrenchFET® | Active | Not Applicable | EAR99 | ROHS3 Compliant | TO-220-3 | 19.31mm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | e3 | Tin (Sn) | 260 | 30 | 1 | 375W | 20 ns | 8.1mOhm | 375W Tc | -120A | 175°C | 110 ns | P-Channel | 2.5V @ 250μA | 7000pF @ 50V | 190nC @ 10V | 20V | -100V | 120A Tc | 100V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP450APBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2008 | Active | 1 (Unlimited) | 3 | 15.87mm | ROHS3 Compliant | Lead Free | 14A | No | 3 | TO-247-3 | Unknown | 20.7mm | 5.31mm | 400mOhm | Through Hole | 38.000013g | -55°C~150°C TJ | 500V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN | 3 | 1 | 1 | Single | 190W | 15 ns | 4V | 190W Tc | 14A | SWITCHING | 35 ns | SILICON | N-Channel | 400m Ω @ 8.4A, 10V | 4V @ 250μA | 2038pF @ 25V | 64nC @ 10V | 36ns | 29 ns | 30V | 500V | 4 V | 14A Tc | 56A | 760 mJ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| IRF740LCPBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2011 | Active | 1 (Unlimited) | 150°C | -55°C | 10.41mm | ROHS3 Compliant | Lead Free | 10A | No | 3 | TO-220-3 | Unknown | 9.01mm | 4.7mm | 550mOhm | Through Hole | 6.000006g | -55°C~150°C TJ | 400V | MOSFET (Metal Oxide) | 1 | 1 | Single | 125W | 11 ns | 4V | 550mOhm | TO-220AB | 125W Tc | 570 ns | 10A | 25 ns | N-Channel | 550mOhm @ 6A, 10V | 4V @ 250μA | 1100pF @ 25V | 39nC @ 10V | 31ns | 20 ns | 30V | 400V | 10A Tc | 400V | 1.1nF | 10V | ±30V | 550 mΩ | |||||||||||||||||||||||||||||||||||||||||
| IRFPE50PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2008 | Active | 1 (Unlimited) | Through Hole | 150°C | -55°C | 15.87mm | ROHS3 Compliant | Lead Free | 7.8A | No | 3 | TO-247-3 | Unknown | 5.45mm | 20.7mm | 5.31mm | 1.2Ohm | Through Hole | 38.000013g | -55°C~150°C TJ | 800V | MOSFET (Metal Oxide) | 1 | 1 | Single | 190W | 19 ns | 4V | 1.2Ohm | TO-247-3 | 190W Tc | 980 ns | 7.8A | 120 ns | N-Channel | 1.2Ohm @ 4.7A, 10V | 4V @ 250μA | 3100pF @ 25V | 200nC @ 10V | 38ns | 39 ns | 20V | 800V | 800V | 4 V | 7.8A Tc | 800V | 3.1nF | 10V | ±20V | 1.2 Ω | |||||||||||||||||||||||||||||||||||||
| IRFP460BPBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 1995 | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | No | 3 | TO-247-3 | No SVHC | Through Hole | 38.000013g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN OVER NICKEL | 1 | 1 | TO-247AC | DRAIN | Single | 278W | 24 ns | 4V | 278W Tc | 20A | SWITCHING | 0.25Ohm | 117 ns | SILICON | N-Channel | 250m Ω @ 10A, 10V | 4V @ 250μA | 3094pF @ 100V | 170nC @ 10V | 31ns | 56 ns | 20V | 500V | 20A Tc | 62A | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| SIR410DP-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | yes | Active | 1 (Unlimited) | 5 | EAR99 | 4.9mm | ROHS3 Compliant | Lead Free | No | 8 | PowerPAK® SO-8 | Unknown | 1.04mm | 5.89mm | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 40 | 8 | R-XDSO-C5 | 1 | FET General Purpose Powers | 1 | DRAIN | Single | 36W | 25 ns | 1.2V | 4.2W Ta 36W Tc | 35A | SWITCHING | 30 ns | SILICON | N-Channel | 4.8m Ω @ 20A, 10V | 2.5V @ 250μA | 1600pF @ 10V | 41nC @ 10V | 15ns | 15 ns | 20V | 20V | 23A | 35A Tc | 60A | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| SIS407ADN-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2015 | TrenchFET® | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Lead Free | Tin | 8 | PowerPAK® 1212-8 | No SVHC | 1.12mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | R-PDSO-F5 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 3.7W | 12 ns | -1V | 3.7W Ta 39.1W Tc | -16.7A | 150°C | SWITCHING | 0.009Ohm | 120 ns | SILICON | P-Channel | 9m Ω @ 15A, 4.5V | 1V @ 250μA | 5875pF @ 10V | 168nC @ 8V | 4ns | 36 ns | 8V | -20V | 18A Tc | 20V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||
| SI2333DS-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | No | 3 | TO-236-3, SC-59, SOT-23-3 | Unknown | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | 3 | 1 | Other Transistors | 1 | Single | 25 ns | -1V | 750mW Ta | -4.1A | SWITCHING | 72 ns | SILICON | P-Channel | 32m Ω @ 5.3A, 4.5V | 1V @ 250μA | 1100pF @ 6V | 18nC @ 4.5V | 60 ns | 8V | -1 V | 4.1A Ta | 12V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||
| SI4190ADY-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | Active | 1 (Unlimited) | 8 | EAR99 | 5mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.75mm | 4mm | 8.8MOhm | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 260 | 30 | 1 | 1 | Single | 3W | 12 ns | 1.5V | 3W Ta 6W Tc | 13A | 150°C | SWITCHING | 34 ns | SILICON | N-Channel | 8.8m Ω @ 15A, 10V | 2.8V @ 250μA | 1970pF @ 50V | 67nC @ 10V | 20V | 100V | 1.5 V | 18.4A Tc | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IRFD9014PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2005 | Active | 1 (Unlimited) | 175°C | -55°C | 6.2738mm | ROHS3 Compliant | Lead Free | No | 4 | 4-DIP (0.300, 7.62mm) | No SVHC | 2.54mm | 3.3782mm | 5.0038mm | 500mOhm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | 1 | 7.62 mm | Single | 1.3W | 11 ns | -4V | 500mOhm | 4-DIP, Hexdip, HVMDIP | 1.3W Ta | 1.1A | 10 ns | P-Channel | 500mOhm @ 660mA, 10V | 4V @ 250μA | 270pF @ 25V | 12nC @ 10V | 63ns | 63 ns | 20V | 60V | -60V | -4 V | 1.1A Ta | 60V | 270pF | 10V | ±20V | 500 mΩ | ||||||||||||||||||||||||||||||||||||||||||
| SI7114DN-T1-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2016 | TrenchFET® | yes | Active | 1 (Unlimited) | 5 | EAR99 | 3.05mm | ROHS3 Compliant | Lead Free | No | 8 | PowerPAK® 1212-8 | Unknown | 1.04mm | 3.05mm | 7.5mOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 30 | 8 | S-XDSO-C5 | 1 | FET General Purpose Powers | 1 | DRAIN | Single | 1.5W | 10 ns | 1V | 1.5W Ta | 18.3A | SWITCHING | 1V | 45 ns | SILICON | N-Channel | 7.5m Ω @ 18.3A, 10V | 3V @ 250μA | 19nC @ 4.5V | 10ns | 10 ns | 20V | 1 V | 11.7A Ta | 30V | 60A | 42 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| SI4850EY-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | yes | Active | 1 (Unlimited) | 8 | EAR99 | 5mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.5mm | 4mm | Surface Mount | 506.605978mg | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 260 | 30 | 8 | 1 | FET General Purpose Powers | 1 | Single | 3.3W | 10 ns | 3V | 1.7W Ta | 6A | SWITCHING | 0.022Ohm | 25 ns | SILICON | N-Channel | 22m Ω @ 6A, 10V | 3V @ 250μA | 27nC @ 10V | 10ns | 12 ns | 20V | 60V | 3 V | 6A | 6A Ta | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IRF9540PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2014 | Active | 1 (Unlimited) | 175°C | -55°C | 10.41mm | ROHS3 Compliant | Lead Free | -19A | 3 | TO-220-3 | Unknown | 19.89mm | 4.7mm | 200mOhm | Through Hole | 6.000006g | -55°C~175°C TJ | -100V | MOSFET (Metal Oxide) | 1 | 1 | Single | 150W | 16 ns | -4V | 200mOhm | TO-220AB | 150W Tc | 260 ns | -19A | 175°C | 34 ns | P-Channel | 200mOhm @ 11A, 10V | 4V @ 250μA | 1400pF @ 25V | 61nC @ 10V | 73ns | 57 ns | 20V | -100V | -4 V | 19A Tc | 100V | 1.4nF | 10V | ±20V | 200 mΩ |