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Vishay Semiconductor Diodes Division(13890)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Max Operating Temperature | Min Operating Temperature | Diameter | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Mounting Type | Weight | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | JESD-30 Code | Operating Temperature (Max) | Subcategory | Qualification Status | Reference Standard | Diode Element Material | Number of Elements | Configuration | Diode Type | Output Current-Max | Application | Number of Phases | JEDEC-95 Code | Non-rep Pk Forward Current-Max | Forward Current | Forward Voltage | Case Connection | Max Surge Current | Element Configuration | Max Reverse Leakage Current | Supplier Device Package | Speed | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Operating Temperature - Junction | Max Reverse Voltage (DC) | Average Rectified Current | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Max Forward Surge Current (Ifsm) | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Reverse Current-Max | Natural Thermal Resistance | Reverse Recovery Time | Reverse Voltage | Reverse Voltage (DC) | Recovery Time | Capacitance @ Vr, F |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| AU2PMHM3_A/H | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 28 Weeks | Surface Mount | Tape & Reel (TR) | 2017 | Automotive, AEC-Q101, eSMP® | Active | 1 (Unlimited) | 3 | EAR99 | 175°C | -55°C | ROHS3 Compliant | Tin | 3 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | TO-277, 3-PowerDFN | unknown | Surface Mount | 8541.10.00.80 | e3 | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | SILICON | 1 | Avalanche | 2A | ULTRA FAST RECOVERY | 1 | TO-277A | 2A | CATHODE | Common Anode | Fast Recovery =< 500ns, > 200mA (Io) | 10μA @ 1000V | 2.5V @ 2A | -55°C~175°C | 1kV | 1.3A | 10μA | 1kV | 30A | 1000V | 75 ns | 29pF @ 4V 1MHz | ||||||||||||||||||||||||||||||||||||
| VS-8EWH06FN-M3 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Bulk | 2012 | FRED Pt® | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -55°C | 6.73mm | ROHS3 Compliant | 3 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | TO-252-3, DPak (2 Leads + Tab), SC-63 | Unknown | 2.39mm | 6.22mm | Surface Mount | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 10 | 8EWH06 | 3 | R-PSSO-G2 | Rectifier Diodes | Not Qualified | SILICON | 1 | Standard | 8A | HYPERFAST SOFT RECOVERY HIGH POWER | 1 | TO-252AA | 8A | 2.4V | CATHODE | 90A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 50μA @ 600V | 2.4V @ 8A | -65°C~175°C | 600V | 8A | 50μA | 600V | 90A | 90A | 25 ns | 600V | 18 ns | ||||||||||||||||||||||||||
| VS-8ETH06S-M3 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | FRED Pt® | Active | 1 (Unlimited) | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | Standard | TO-263AB (D2PAK) | Fast Recovery =< 500ns, > 200mA (Io) | 50μA @ 600V | 2.4V @ 8A | -65°C~175°C | 600V | 8A | 25ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-8EWH06FNTRL-M3 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2015 | FRED Pt® | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | TO-252-3, DPak (2 Leads + Tab), SC-63 | unknown | Surface Mount | 8541.10.00.80 | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSSO-G2 | 175°C | Rectifier Diodes | Not Qualified | SILICON | 1 | SINGLE | Standard | 8A | HYPERFAST SOFT RECOVERY HIGH POWER | 1 | TO-252AA | 90A | CATHODE | Fast Recovery =< 500ns, > 200mA (Io) | 50μA @ 600V | 2.4V @ 8A | -65°C~175°C | 600V | 8A | 600V | 25 ns | ||||||||||||||||||||||||||||||||||||||||
| SS12P4S-M3/86A | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2014 | eSMP® | Active | 1 (Unlimited) | 3 | EAR99 | 150°C | -55°C | ROHS3 Compliant | No | 3 | LOW POWER LOSS | TO-277, 3-PowerDFN | Surface Mount | 8541.10.00.80 | DUAL | FLAT | 3 | Rectifier Diodes | SILICON | 1 | Schottky | 4.4A | EFFICIENCY | 1 | TO-277A | 12A | 600mV | CATHODE | 280A | Common Anode | Fast Recovery =< 500ns, > 200mA (Io) | 800μA @ 40V | 600mV @ 12A | -55°C~150°C | 30V | 12A | 30V | 280A | 750pF @ 4V 1MHz | |||||||||||||||||||||||||||||||||||||||
| NSB8JT-E3/45 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 22 Weeks | Surface Mount | Tube | 2011 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -55°C | 10.45mm | ROHS3 Compliant | No | 3 | FREE WHEELING DIODE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.83mm | 9.14mm | Surface Mount | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 245 | 30 | NSB8J | 3 | R-PSSO-G2 | Rectifier Diodes | SILICON | 1 | Standard | 8A | GENERAL PURPOSE | 1 | 8A | 1.1V | 125A | Common Cathode | Standard Recovery >500ns, > 200mA (Io) | 10μA @ 600V | 1.1V @ 8A | -55°C~150°C | 600V | 8A | 10μA | 600V | 125A | 600V | 55pF @ 4V 1MHz | ||||||||||||||||||||||||||||||
| ES3A-E3/9AT | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 21 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -55°C | ROHS3 Compliant | Lead Free | No | 2 | FREE WHEELING DIODE, LOW POWER LOSS | DO-214AB, SMC | Surface Mount | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 40 | ES3A | 2 | Rectifier Diodes | SILICON | 1 | Standard | 3A | EFFICIENCY | 1 | 3A | 900mV | 100A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 10μA @ 50V | 900mV @ 3A | -55°C~150°C | 50V | 3A | 10μA | 50V | 100A | 30 ns | 50V | 30 ns | 45pF @ 4V 1MHz | |||||||||||||||||||||||||||||||
| SE40PG-M3/87A | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 28 Weeks | Surface Mount | Tape & Reel (TR) | 2017 | Automotive, AEC-Q101 | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-277, 3-PowerDFN | unknown | Surface Mount | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | R-PDSO-F3 | 175°C | SILICON | 1 | SINGLE | Standard | GENERAL PURPOSE | 1 | TO-277A | 60A | CATHODE | Standard Recovery >500ns, > 200mA (Io) | 10μA @ 400V | 1.05V @ 4A | -55°C~175°C | 400V | 2.4A | 2.4A DC | 10μA | 2.2 μs | 28pF @ 4V 1MHz | |||||||||||||||||||||||||||||||||||||||||
| GP02-40-E3/53 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 22 Weeks | Through Hole | Tape & Box (TB) | 2015 | Automotive, AEC-Q101 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | ROHS3 Compliant | No | 2 | FREE WHEELING DIODE | DO-204AL, DO-41, Axial | Through Hole | 8541.10.00.70 | e3 | MATTE TIN | WIRE | 2 | SILICON | 1 | Standard | ISOLATED | 15A | Single | Standard Recovery >500ns, > 200mA (Io) | 5μA @ 4000V | 3V @ 1A | -65°C~175°C | 4kV | 250mA | 5μA | 4kV | 15A | 4000V | 2 μs | 4kV | 2 μs | 3pF @ 4V 1MHz | |||||||||||||||||||||||||||||||||||||||
| SE40PB-M3/86A | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 28 Weeks | Surface Mount | Tape & Reel (TR) | 2015 | Automotive, AEC-Q101 | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-277, 3-PowerDFN | unknown | Surface Mount | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | R-PDSO-F3 | 175°C | SILICON | 1 | SINGLE | Standard | GENERAL PURPOSE | 1 | TO-277A | 60A | CATHODE | Standard Recovery >500ns, > 200mA (Io) | 10μA @ 100V | 1.05V @ 2A | -55°C~175°C | 100V | 2.4A | 2.4A DC | 10μA | 2.2 μs | 28pF @ 4V 1MHz | |||||||||||||||||||||||||||||||||||||||||
| SS1P3LHM3/85A | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2017 | Automotive, AEC-Q101, eSMP® | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -55°C | ROHS3 Compliant | 2 | FREE WHEELING DIODE, LOW POWER LOSS | DO-220AA | unknown | Surface Mount | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | 260 | 30 | 2 | Rectifier Diodes | Not Qualified | SILICON | 1 | Schottky | EFFICIENCY | 1 | 1.5A | CATHODE | 50A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 200μA @ 30V | 450mV @ 1A | -55°C~150°C | 30V | 1A | 200μA | 30V | 50A | 110pF @ 4V 1MHz | ||||||||||||||||||||||||||||||||||||
| SS1P4L-M3/85A | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2017 | eSMP® | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -55°C | ROHS3 Compliant | 2 | FREE WHEELING DIODE, LOW POWER LOSS | DO-220AA | unknown | Surface Mount | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | 260 | 30 | 2 | Rectifier Diodes | Not Qualified | SILICON | 1 | Schottky | EFFICIENCY | 1 | 1.5A | 480mV | CATHODE | 30A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 150μA @ 40V | 480mV @ 1A | -55°C~150°C | 40V | 1A | 150μA | 40V | 50A | 130pF @ 4V 1MHz | |||||||||||||||||||||||||||||||||||
| SS2P4HM3/85A | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2017 | eSMP® | yes | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -55°C | ROHS3 Compliant | No | 2 | FREE WHEELING DIODE, LOW POWER LOSS | DO-220AA | Surface Mount | 24.012046mg | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | 2 | AEC-Q101 | SILICON | 1 | Schottky | 2A | EFFICIENCY | 1 | 2A | 550mV | CATHODE | Single | Fast Recovery =< 500ns, > 200mA (Io) | 150μA @ 40V | 550mV @ 2A | -55°C~150°C | 40V | 2A | 150μA | 40V | 50A | 50A | 110pF @ 4V 1MHz | |||||||||||||||||||||||||||||||||||
| ES2D-M3/52T | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 22 Weeks | Surface Mount | Tape & Reel (TR) | 2016 | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -55°C | ROHS3 Compliant | Lead Free | FREE WHEELING DIODE, LOW POWER LOSS | DO-214AA, SMB | unknown | Surface Mount | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | NOT SPECIFIED | NOT SPECIFIED | R-PDSO-C2 | SILICON | 1 | Standard | 2A | EFFICIENCY | 1 | Single | Fast Recovery =< 500ns, > 200mA (Io) | 10μA @ 200V | 900mV @ 2A | -55°C~150°C | 200V | 2A | 10μA | 200V | 50A | 30 ns | 18pF @ 4V 1MHz | ||||||||||||||||||||||||||||||||||||||||
| VS-2EMH01HM3/5AT | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 11 Weeks | Surface Mount | Tape & Reel (TR) | 2017 | Automotive, AEC-Q101, FRED Pt® | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | DO-214AC, SMA | unknown | Surface Mount | 8541.10.00.80 | DUAL | C BEND | NOT SPECIFIED | NOT SPECIFIED | R-PDSO-C2 | 175°C | SILICON | 1 | SINGLE | Standard | 2A | HYPERFAST SOFT RECOVERY | 1 | 50A | Fast Recovery =< 500ns, > 200mA (Io) | 2μA @ 100V | 950mV @ 2A | -55°C~175°C | 100V | 2A | 100V | 2μA | 25 ns | ||||||||||||||||||||||||||||||||||||||||||||
| UG1D-E3/54 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tape & Reel (TR) | yes | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -55°C | 2.7mm | 5.2mm | ROHS3 Compliant | Lead Free | Tin | 2 | FREE WHEELING DIODE | DO-204AL, DO-41, Axial | unknown | Through Hole | 8541.10.00.80 | e3 | WIRE | NOT APPLICABLE | NOT APPLICABLE | UG1D | 2 | Rectifier Diodes | Not Qualified | SILICON | 1 | Standard | 1A | 1A | 950mV | ISOLATED | 40A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 5μA @ 200V | 950mV @ 1A | -55°C~150°C | 200V | 1A | 5μA | 200V | 40A | 40A | 25 ns | 200V | 35 ns | |||||||||||||||||||||||||||||||
| MBRF1045-E3/45 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 22 Weeks | Through Hole | Tube | 2016 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -65°C | 10.26mm | ROHS3 Compliant | No | 2 | FREE WHEELING DIODE, LOW POWER LOSS | TO-220-2 Full Pack, Isolated Tab | 15.24mm | 4.83mm | Through Hole | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Rectifier Diodes | SILICON | 1 | Schottky | EFFICIENCY | 1 | 10A | 840mV | 150A | Single | 100μA | Fast Recovery =< 500ns, > 200mA (Io) | 100μA @ 45V | 570mV @ 10A | -65°C~150°C | 45V | 10A | 100μA | 45V | 150A | ||||||||||||||||||||||||||||||||||||||
| VS-HFA06PB120-N3 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Through Hole | Tube | 2009 | HEXFRED® | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -55°C | 15.9mm | ROHS3 Compliant | 2 | LOW NOISE, PD-CASE | TO-247-2 | unknown | 20.7mm | 5.3mm | Through Hole | 8541.10.00.80 | NOT SPECIFIED | NOT SPECIFIED | SILICON | 1 | Standard | 6A | EFFICIENCY | 1 | 8A | CATHODE | Single | Fast Recovery =< 500ns, > 200mA (Io) | 5μA @ 1200V | 3V @ 6A | -55°C~150°C | 1.2kV | 6A | 5μA | 1.2kV | 80A | 1200V | 80 ns | |||||||||||||||||||||||||||||||||||||||
| VS-85HFR40 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Chassis, Stud | Bulk | 2009 | Active | 1 (Unlimited) | 1 | Screw | EAR99 | 180°C | -65°C | 20.02mm | ROHS3 Compliant | No | 2 | DO-203AB, DO-5, Stud | Unknown | 22.9mm | 17.35mm | Chassis, Stud Mount | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | O-MUPM-D1 | SILICON | 1 | Standard, Reverse Polarity | GENERAL PURPOSE | 1 | 85A | 1.2V | 1.8kA | Single | Standard Recovery >500ns, > 200mA (Io) | 9mA @ 400V | 1.2V @ 267A | -65°C~180°C | 400V | 85A | 9mA | 400V | 1.8kA | 1.8kA | 0.25 °C/W | 400V | |||||||||||||||||||||||||||||||||||
| VS-40HF40 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Chassis, Stud | Bulk | 2000 | Active | 1 (Unlimited) | 1 | EAR99 | 190°C | -65°C | 20.08mm | ROHS3 Compliant | No | 2 | DO-203AB, DO-5, Stud | Unknown | 22.9mm | 17.4mm | Chassis, Stud Mount | 8541.10.00.80 | UPPER | SOLDER LUG | O-MUPM-D1 | SILICON | 1 | Standard | GENERAL PURPOSE | 1 | 40A | 1.3V | CATHODE | 595A | Single | Standard Recovery >500ns, > 200mA (Io) | 9mA @ 400V | 1.3V @ 125A | -65°C~190°C | 400V | 40A | 9mA | 400V | 595A | 595A | 0.25 °C/W | 400V | |||||||||||||||||||||||||||||||||||||
| VS-ETH3007THN3 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Tube | Automotive, AEC-Q101, FRED Pt® | Active | Not Applicable | TO-220-2 | Through Hole | Standard | TO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | 30μA @ 650V | 2.1V @ 30A | -55°C~175°C | 650V | 30A | 37ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-12F10 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Chassis, Stud | Bulk | 1998 | Active | 1 (Unlimited) | 1 | EAR99 | 175°C | -65°C | 12.69mm | ROHS3 Compliant | No | 2 | DO-203AA, DO-4, Stud | Unknown | 31.8mm | 11mm | Chassis, Stud Mount | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | 12F10 | O-MUPM-D1 | SILICON | 1 | Standard | GENERAL PURPOSE | 1 | 12A | 1.26V | CATHODE | 280A | Single | Standard Recovery >500ns, > 200mA (Io) | 12mA @ 100V | 1.26V @ 38A | -65°C~175°C | 100V | 12A | 12mA | 100V | 370A | 280A | 0.5 °C/W | 100V | |||||||||||||||||||||||||||||||||||
| VS-1N3208 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Chassis, Stud | Bulk | 2011 | Active | 1 (Unlimited) | 1 | EAR99 | 175°C | -65°C | ROHS3 Compliant | No | 2 | DO-203AB, DO-5, Stud | Unknown | Chassis, Stud Mount | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | 1N3208 | O-MUPM-D1 | SILICON | 1 | Standard | GENERAL PURPOSE | 1 | 15A | 1.5V | CATHODE | 297A | Single | Standard Recovery >500ns, > 200mA (Io) | 10mA @ 50V | 1.5V @ 15A | -65°C~175°C | 50V | 15A | 10mA | 50V | 297A | 250A | 0.25 °C/W | 50V | |||||||||||||||||||||||||||||||||||||
| VS-T85HFL60S02 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Chassis Mount, Panel, Screw | Bulk | 2005 | Active | 1 (Unlimited) | EAR99 | 125°C | -40°C | 41mm | ROHS3 Compliant | 85A | 2 | D-55 T-Module | unknown | 25mm | 27mm | Chassis Mount | NOT APPLICABLE | NOT APPLICABLE | Standard | 85A | 1.55V | 1.37kA | Single | Fast Recovery =< 500ns, > 200mA (Io) | 20mA @ 600V | 600V | 85A | 100μA | 600V | 1.37kA | 1.37kA | 200 ns | 600V | 200 ns | ||||||||||||||||||||||||||||||||||||||||||||||
| VS-1N2131RA | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Chassis, Stud | Bulk | 2011 | Active | 1 (Unlimited) | 1 | EAR99 | 190°C | -65°C | 20.02mm | ROHS3 Compliant | 60A | 2 | LOW LEAKAGE CURRENT | DO-203AB, DO-5, Stud | unknown | 22.9mm | 17.35mm | Chassis, Stud Mount | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | NOT SPECIFIED | 1N2131 | O-MUPM-D1 | Rectifier Diodes | SILICON | 1 | Standard, Reverse Polarity | POWER | 1 | 60A | ANODE | 900A | Single | Standard Recovery >500ns, > 200mA (Io) | 10mA @ 200V | 1.3V @ 188A | -65°C~200°C | 200V | 60A | 10mA | 200V | 900A | 900A | 0.25 °C/W | 200V | |||||||||||||||||||||||||||||||
| VS-T85HFL100S05 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Chassis Mount, Panel, Screw | Bulk | 1997 | Active | 1 (Unlimited) | EAR99 | 125°C | -40°C | 41mm | ROHS3 Compliant | 85A | 2 | D-55 T-Module | Unknown | 25mm | 27mm | Chassis Mount | NOT APPLICABLE | NOT APPLICABLE | Standard | 85A | 1.55V | 1.37kA | Single | Fast Recovery =< 500ns, > 200mA (Io) | 20mA @ 1000V | 1kV | 85A | 100μA | 1kV | 1.37kA | 1.37kA | 1000V | 500 ns | 1kV | 500 ns | |||||||||||||||||||||||||||||||||||||||||||||
| VS-300UR40A | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Chassis, Stud | Bulk | 2008 | Active | 1 (Unlimited) | 1 | EAR99 | 200°C | -65°C | ROHS3 Compliant | No | 2 | DO-205AB, DO-9, Stud | Stud Mount | 8541.10.00.80 | Nickel (Ni) | UPPER | HIGH CURRENT CABLE | O-MUPM-H1 | SILICON | 1 | Standard, Reverse Polarity | GENERAL PURPOSE | 1 | 300A | 1.4V | 6.85kA | Single | Standard Recovery >500ns, > 200mA (Io) | 40mA @ 400V | 1.4V @ 942A | -65°C~200°C | 400V | 300A | 40mA | 400V | 6.85kA | 6.85kA | 0.08 °C/W | 400V | |||||||||||||||||||||||||||||||||||||||||
| VS-25FR120M | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Chassis, Stud | Bulk | 2017 | Active | 1 (Unlimited) | 1 | EAR99 | 175°C | -65°C | ROHS3 Compliant | 2 | DO-203AA, DO-4, Stud | unknown | Chassis, Stud Mount | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | NOT SPECIFIED | O-MUPM-D1 | SILICON | 1 | Standard, Reverse Polarity | GENERAL PURPOSE | 1 | 1.3V | ANODE | Single | Standard Recovery >500ns, > 200mA (Io) | 1.3V @ 78A | -65°C~175°C | 1.2kV | 25A | 373A | 1200V | ||||||||||||||||||||||||||||||||||||||||||||
| VS-300U10A | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Chassis, Stud | Bulk | 2007 | Active | 1 (Unlimited) | 1 | 200°C | -65°C | ROHS3 Compliant | No | 2 | DO-205AB, DO-9, Stud | Stud Mount | Nickel (Ni) | UPPER | HIGH CURRENT CABLE | O-MUPM-H1 | SILICON | 1 | Standard | GENERAL PURPOSE | 1 | 300A | 1.4V | CATHODE | 6.85kA | Single | Standard Recovery >500ns, > 200mA (Io) | 40mA @ 100V | 1.4V @ 942A | -65°C~200°C | 100V | 300A | 40mA | 100V | 6.85kA | 5.75kA | 0.08 °C/W | 100V | ||||||||||||||||||||||||||||||||||||||||||
| UGF8DT-E3/45 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 20 Weeks | Through Hole | Tube | 2011 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -55°C | ROHS3 Compliant | No | 2 | FREE WHEELING DIODE | TO-220-2 Full Pack, Isolated Tab | Through Hole | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Rectifier Diodes | SILICON | 1 | Standard | 8A | EFFICIENCY | 1 | 8A | 1.2V | 150A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 10μA @ 200V | 1V @ 8A | -55°C~150°C | 200V | 8A | 10μA | 200V | 150A | 30 ns | 200V | 30 ns |