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Vishay Semiconductor Diodes Division(13890)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Diameter | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Mounting Type | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | JESD-30 Code | Operating Temperature (Max) | Subcategory | Qualification Status | Diode Element Material | Number of Elements | Configuration | Diode Type | Output Current-Max | Application | Number of Phases | JEDEC-95 Code | Non-rep Pk Forward Current-Max | Output Current | Polarity | Forward Current | Forward Voltage | Case Connection | Max Surge Current | Element Configuration | Max Reverse Leakage Current | Speed | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Operating Temperature - Junction | Max Reverse Voltage (DC) | Average Rectified Current | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Max Forward Surge Current (Ifsm) | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Reverse Current-Max | Natural Thermal Resistance | Reverse Recovery Time | Reverse Voltage | Recovery Time | Reverse Recovery Time-Max | Capacitance @ Vr, F |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| V8P12HM3_A/H | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2017 | Automotive, AEC-Q101, eSMP®, TMBS® | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | FREE WHEELING DIODE, LOW POWER LOSS | TO-277, 3-PowerDFN | unknown | Surface Mount | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | R-PDSO-F3 | 150°C | SILICON | 1 | SINGLE | Schottky | 8A | EFFICIENCY | 1 | TO-277A | 140A | CATHODE | Fast Recovery =< 500ns, > 200mA (Io) | 300μA @ 120V | 840mV @ 8A | -40°C~150°C | 120V | 8A | 120V | 300μA | ||||||||||||||||||||||||||||||||||||||
| AS3PM-M3/86A | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | eSMP® | Active | 1 (Unlimited) | 3 | EAR99 | 175°C | -55°C | ROHS3 Compliant | Tin | No | 3 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | TO-277, 3-PowerDFN | Surface Mount | 8541.10.00.80 | DUAL | FLAT | AS3PM | 3 | Rectifier Diodes | SILICON | 1 | Avalanche | GENERAL PURPOSE | 1 | TO-277A | 3A | CATHODE | 70A | Common Anode | Standard Recovery >500ns, > 200mA (Io) | 10μA @ 1000V | 920mV @ 1.5A | -55°C~175°C | 1kV | 2.1A | 280nA | 1kV | 70A | 1000V | 2.1A DC | 1.2 μs | 1kV | 37pF @ 4V 1MHz | |||||||||||||||||||||||||||||||
| AS4PG-M3/86A | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2016 | eSMP® | Active | 1 (Unlimited) | 3 | EAR99 | 175°C | -55°C | 6.15mm | ROHS3 Compliant | Tin | No | 3 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | TO-277, 3-PowerDFN | 1.2mm | 4.35mm | Surface Mount | 8541.10.00.80 | e3 | DUAL | FLAT | 260 | 30 | AS4PG | 3 | Rectifier Diodes | SILICON | 1 | Avalanche | GENERAL PURPOSE | 1 | TO-277A | 4A | 1.1V | CATHODE | 100A | Common Anode | Standard Recovery >500ns, > 200mA (Io) | 10μA @ 400V | 962mV @ 2A | -55°C~175°C | 400V | 2.4A | 350nA | 400V | 100A | 100A | 2.4A DC | 1.8 μs | 400V | 1.8 μs | 60pF @ 4V 1MHz | |||||||||||||||||||||||
| AS4PK-M3/86A | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | eSMP® | Active | 1 (Unlimited) | 3 | EAR99 | 175°C | -55°C | ROHS3 Compliant | Tin | No | 3 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | TO-277, 3-PowerDFN | Surface Mount | 8541.10.00.80 | e3 | DUAL | FLAT | 260 | 30 | AS4PK | 3 | Rectifier Diodes | SILICON | 1 | Avalanche | GENERAL PURPOSE | 1 | TO-277A | 4A | 1.1V | CATHODE | 100A | Common Anode | Standard Recovery >500ns, > 200mA (Io) | 10μA @ 800V | 962mV @ 2A | -55°C~175°C | 800V | 2.4A | 350nA | 800V | 100A | 100A | 2.4A DC | 1.8 μs | 800V | 1.8 μs | 60pF @ 4V 1MHz | ||||||||||||||||||||||||||
| 1N5404GP-E3/54 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 22 Weeks | Through Hole | Tape & Reel (TR) | 2016 | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT, SNUBBER DIODE | DO-201AD, Axial | unknown | Through Hole | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | NOT APPLICABLE | NOT APPLICABLE | O-PALF-W2 | 175°C | SILICON | 1 | SINGLE | Standard | 3A | HIGH VOLTAGE | 1 | 125A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | 5μA @ 400V | 1.2V @ 3A | -50°C~150°C | 400V | 3A | 400V | 5μA | 5μs | 30pF @ 4V 1MHz | |||||||||||||||||||||||||||||||||||||||
| ESH3C-E3/57T | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 21 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -55°C | ROHS3 Compliant | No | 2 | FREE WHEELING DIODE, LOW POWER LOSS | DO-214AB, SMC | Surface Mount | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 40 | ESH3C | 2 | Rectifier Diodes | SILICON | 1 | Standard | 3A | EFFICIENCY | 1 | 3A | 900mV | 125A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 5μA @ 150V | 900mV @ 3A | -55°C~175°C | 150V | 3A | 5μA | 150V | 125A | 40 ns | 150V | 25 ns | ||||||||||||||||||||||||||||||
| 1N5407GP-E3/73 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 22 Weeks | Through Hole | Tape & Box (TB) | 2016 | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT, SNUBBER DIODE | DO-201AD, Axial | unknown | Through Hole | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | NOT APPLICABLE | NOT APPLICABLE | O-PALF-W2 | 175°C | SILICON | 1 | SINGLE | Standard | 3A | HIGH VOLTAGE | 1 | 125A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | 5μA @ 400V | 1.2V @ 3A | -50°C~150°C | 800V | 3A | 800V | 5μA | 5μs | 30pF @ 4V 1MHz | |||||||||||||||||||||||||||||||||||||||
| VS-MBRD340TR-M3 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2016 | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -40°C | ROHS3 Compliant | 3 | FREE WHEELING DIODE, HIGH RELIABILITY | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | unknown | Surface Mount | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 260 | 40 | 3 | R-PSSO-G2 | Rectifier Diodes | Not Qualified | SILICON | 1 | Schottky | 3A | GENERAL PURPOSE | 1 | TO-252AA | 3A | 600mV | CATHODE | Common Anode | Fast Recovery =< 500ns, > 200mA (Io) | 200μA @ 20V | 600mV @ 3A | -40°C~150°C | 40V | 3A | 200μA | 40V | 490A | 490A | 189pF @ 5V 1MHz | ||||||||||||||||||||||||||||||
| VS-MBRD320-M3 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tube | 2016 | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -40°C | ROHS3 Compliant | 3 | FREE WHEELING DIODE, HIGH RELIABILITY | TO-252-3, DPak (2 Leads + Tab), SC-63 | unknown | Surface Mount | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 260 | 40 | 3 | R-PSSO-G2 | Rectifier Diodes | Not Qualified | SILICON | 1 | Schottky | 3A | GENERAL PURPOSE | 1 | TO-252AA | 3A | CATHODE | Common Anode | Fast Recovery =< 500ns, > 200mA (Io) | 200μA @ 20V | 600mV @ 3A | -40°C~150°C | 20V | 3A | 200μA | 20V | 490A | 189pF @ 5V 1MHz | |||||||||||||||||||||||||||||||||
| VS-30WQ10FNTRR-M3 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2016 | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -40°C | ROHS3 Compliant | 3 | FREE WHEELING DIODE, HIGH RELIABILITY | TO-252-3, DPak (2 Leads + Tab), SC-63 | unknown | Surface Mount | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 260 | 40 | 3 | R-PSSO-G2 | Rectifier Diodes | Not Qualified | SILICON | 1 | Schottky | GENERAL PURPOSE | 1 | 3.5A | CATHODE | Common Anode | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 100V | 810mV @ 3A | -40°C~150°C | 100V | 3.5A | 1mA | 100V | 440A | 92pF @ 5V 1MHz | |||||||||||||||||||||||||||||||||||
| SB5H90-E3/54 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tape & Reel (TR) | 2009 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -55°C | 5.3mm | 9.4996mm | ROHS3 Compliant | Lead Free | No | 2 | FREE WHEELING DIODE, LOW POWER LOSS, LOW LEAKAGE CURRENT | DO-201AD, Axial | Through Hole | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | 2 | Rectifier Diodes | SILICON | 1 | Schottky | EFFICIENCY | 1 | 5A | Standard | 5A | 800mV | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 200μA @ 90V | 800mV @ 5A | 175°C Max | 90V | 5A | 200μA | 90V | 200A | 200A | ||||||||||||||||||||||||||||||||
| VS-30WQ10FNTRL-M3 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2016 | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -40°C | ROHS3 Compliant | FREE WHEELING DIODE, HIGH RELIABILITY | TO-252-3, DPak (2 Leads + Tab), SC-63 | unknown | Surface Mount | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 260 | 40 | 3 | R-PSSO-G2 | Rectifier Diodes | Not Qualified | SILICON | 1 | Schottky | GENERAL PURPOSE | 1 | 3.5A | CATHODE | Common Anode | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 100V | 810mV @ 3A | -40°C~150°C | 100V | 3.5A | 1mA | 100V | 440A | 92pF @ 5V 1MHz | ||||||||||||||||||||||||||||||||||||
| SSC53L-M3/57T | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 11 Weeks | Surface Mount | Tape & Reel (TR) | 2016 | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | FREE WHEELING DIODE, LOW POWER LOSS | DO-214AB, SMC | unknown | Surface Mount | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | NOT SPECIFIED | NOT SPECIFIED | R-PDSO-C2 | 150°C | SILICON | 1 | SINGLE | Schottky | 5A | EFFICIENCY | 1 | Fast Recovery =< 500ns, > 200mA (Io) | 700μA @ 30V | 450mV @ 5A | -65°C~150°C | 30V | 5A | 30V | 700μA | ||||||||||||||||||||||||||||||||||||||||||
| AS3PD-M3/86A | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | eSMP® | Active | 1 (Unlimited) | 3 | EAR99 | 175°C | -55°C | ROHS3 Compliant | Tin | No | 3 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | TO-277, 3-PowerDFN | Surface Mount | 8541.10.00.80 | DUAL | FLAT | AS3PD | 3 | Rectifier Diodes | SILICON | 1 | Avalanche | GENERAL PURPOSE | 1 | TO-277A | 3A | CATHODE | 70A | Common Anode | Standard Recovery >500ns, > 200mA (Io) | 10μA @ 200V | 920mV @ 1.5A | -55°C~175°C | 200V | 2.1A | 280nA | 200V | 70A | 2.1A DC | 1.2 μs | 200V | 1.2 μs | 37pF @ 4V 1MHz | |||||||||||||||||||||||||||||||
| MURS340-E3/9AT | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 21 Weeks | Surface Mount | Tape & Reel (TR) | 2015 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | ROHS3 Compliant | No | 2 | FREE WHEELING DIODE | DO-214AB, SMC | Surface Mount | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 30 | MURS340 | 2 | Rectifier Diodes | SILICON | 1 | Standard | 4A | EFFICIENCY | 1 | 4A | 1.28V | 125A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 10μA @ 400V | 1.25V @ 3A | -65°C~175°C | 400V | 3A | 10μA | 400V | 125A | 75 ns | 400V | 75 ns | ||||||||||||||||||||||||||||||
| P600B-E3/73 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tape & Box (TB) | 2016 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -50°C | ROHS3 Compliant | 2 | FREE WHEELING DIODE | P600, Axial | unknown | Through Hole | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | NOT APPLICABLE | NOT APPLICABLE | 2 | Rectifier Diodes | Not Qualified | SILICON | 1 | Standard | 6A | GENERAL PURPOSE | 1 | 22A | 1.3V | ISOLATED | Single | Standard Recovery >500ns, > 200mA (Io) | 5μA @ 100V | 900mV @ 6A | -50°C~150°C | 100V | 6A | 5μA | 100V | 400A | 2.5 μs | 150pF @ 4V 1MHz | ||||||||||||||||||||||||||||||||
| V8PL6-M3/86A | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2017 | eSMP®, TMBS® | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | FREE WHEELING DIODE, LOW POWER LOSS | TO-277, 3-PowerDFN | unknown | Surface Mount | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | R-PDSO-F3 | 150°C | SILICON | 1 | SINGLE | Schottky | EFFICIENCY | 1 | TO-277A | 140A | CATHODE | Fast Recovery =< 500ns, > 200mA (Io) | 2.4mA @ 60V | 580mV @ 8A | -40°C~150°C | 60V | 4.3A | 60V | 2400μA | |||||||||||||||||||||||||||||||||||||||
| V8P45-M3/86A | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2016 | eSMP®, TMBS® | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | FREE WHEELING DIODE, LOW POWER LOSS | TO-277, 3-PowerDFN | unknown | Surface Mount | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | R-PDSO-F3 | 150°C | SILICON | 1 | SINGLE | Schottky | EFFICIENCY | 1 | TO-277A | 140A | CATHODE | Fast Recovery =< 500ns, > 200mA (Io) | 600μA @ 45V | 580mV @ 8A | -40°C~150°C | 45V | 4.3A | 45V | 600μA | |||||||||||||||||||||||||||||||||||||||
| V8P8-M3/86A | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2017 | eSMP®, TMBS® | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | FREE WHEELING DIODE, LOW POWER LOSS | TO-277, 3-PowerDFN | unknown | Surface Mount | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | R-PDSO-F3 | 150°C | SILICON | 1 | SINGLE | Schottky | 4A | EFFICIENCY | 1 | TO-277A | 140A | CATHODE | Fast Recovery =< 500ns, > 200mA (Io) | 700μA @ 80V | 660mV @ 8A | -40°C~150°C | 80V | 4A | 80V | 700μA | ||||||||||||||||||||||||||||||||||||||
| RGL34B-E3/98 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 19 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | SUPERECTIFIER® | yes | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | ROHS3 Compliant | 2 | FREE WHEELING DIODE | DO-213AA (Glass) | unknown | Surface Mount | 8541.10.00.70 | e3 | Matte Tin (Sn) | END | WRAP AROUND | 260 | 40 | RGL34B | 2 | Rectifier Diodes | Not Qualified | SILICON | 1 | Standard | 0.5A | ISOLATED | 10A | Single | 5μA | Fast Recovery =< 500ns, > 200mA (Io) | 5μA @ 100V | 1.3V @ 500mA | -65°C~175°C | 100V | 500mA | 150 ns | 150 ns | 4pF @ 4V 1MHz | |||||||||||||||||||||||||||||||||
| S3B-E3/9AT | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 11 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -55°C | ROHS3 Compliant | No | 2 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | DO-214AB, SMC | Surface Mount | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 30 | S3B | 2 | Rectifier Diodes | SILICON | 1 | Standard | 3A | GENERAL PURPOSE | 1 | 3A | 1.15V | 100A | Single | Standard Recovery >500ns, > 200mA (Io) | 10μA @ 100V | 1.15V @ 2.5A | -55°C~150°C | 100V | 3A | 10μA | 100V | 100A | 2.5 μs | 100V | 2.5 μs | 60pF @ 4V 1MHz | |||||||||||||||||||||||||||||
| BYM11-600HE3/96 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | SUPERECTIFIER® | yes | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | ROHS3 Compliant | Tin | 2 | FREE WHEELING DIODE, HIGH RELIABILITY | DO-213AB, MELF (Glass) | unknown | Surface Mount | 8541.10.00.80 | e3 | END | WRAP AROUND | NOT SPECIFIED | NOT SPECIFIED | BYM11-600 | 2 | Rectifier Diodes | Not Qualified | SILICON | 1 | Standard | 1A | 1A | 1.3V | ISOLATED | 30A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 5μA @ 600V | 1.3V @ 1A | -65°C~175°C | 600V | 1A | 5μA | 600V | 30A | 250 ns | 600V | 250 ns | 15pF @ 4V 1MHz | ||||||||||||||||||||||||||||
| VS-10ETF10PBF | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2011 | Discontinued | 1 (Unlimited) | EAR99 | 150°C | -40°C | 10.51mm | ROHS3 Compliant | Tin | No | 2 | TO-220-2 | 15.25mm | 4.65mm | Through Hole | 8541.10.00.80 | 10ETF10 | Standard | 10A | 1.33V | 185A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 1.33V @ 10A | -40°C~150°C | 10A | 100μA | 1kV | 185A | 160A | 1000V | 0.5 °C/W | 310 ns | 1kV | 310 ns | |||||||||||||||||||||||||||||||||||||||||
| VS-20ETF06PBF | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2011 | Discontinued | 1 (Unlimited) | EAR99 | 150°C | -40°C | 10.54mm | ROHS3 Compliant | No | 2 | TO-220-2 | Unknown | 8.76mm | 4.57mm | Through Hole | 8541.10.00.80 | 20ETF06 | Standard | 20A | 1.3V | 300A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 100μA @ 600V | 1.3V @ 20A | -40°C~150°C | 600V | 20A | 100μA | 600V | 300A | 300A | 0.5 °C/W | 160 ns | 600V | 160 ns | ||||||||||||||||||||||||||||||||||||||||
| VS-20ETF06FPPBF | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2007 | Obsolete | 1 (Unlimited) | 2 | EAR99 | 150°C | -40°C | 10.6mm | ROHS3 Compliant | No | 2 | FREE WHEELING DIODE, UL APPROVED | TO-220-2 Full Pack | Unknown | 8.9mm | 4.8mm | Through Hole | 8541.10.00.80 | e3 | MATTE TIN OVER NICKEL | 20ETF06 | SILICON | 1 | Standard | FAST SOFT RECOVERY | 1 | 20A | 1.67V | ISOLATED | 300A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 100μA @ 600V | 1.3V @ 20A | -40°C~150°C | 600V | 20A | 100μA | 600V | 300A | 300A | 0.5 °C/W | 160 ns | 600V | 160 ns | |||||||||||||||||||||||||||||||
| VS-20ETS12PBF | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2001 | Discontinued | 1 (Unlimited) | EAR99 | 150°C | -40°C | 10.54mm | ROHS3 Compliant | No | 2 | TO-220-2 | Unknown | 8.76mm | 4.57mm | Through Hole | 8541.10.00.80 | 20ETS12 | 3 | Standard | 20A | 1.1V | 300A | Single | Standard Recovery >500ns, > 200mA (Io) | 100μA @ 1200V | 1.1V @ 20A | -40°C~150°C | 1.2kV | 20A | 100μA | 1.2kV | 300A | 300A | 1200V | 0.5 °C/W | 1.2kV | ||||||||||||||||||||||||||||||||||||||||
| VS-10ETF06PBF | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2009 | Discontinued | 1 (Unlimited) | EAR99 | 150°C | -40°C | 10.54mm | ROHS3 Compliant | Lead Free | No | 2 | TO-220-2 | 8.76mm | 4.57mm | Through Hole | 8541.10.00.80 | 10ETF06 | Standard | 10A | 1.2V | 160A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 1.2V @ 10A | -40°C~150°C | 10A | 100μA | 600V | 160A | 160A | 0.5 °C/W | 145 ns | 600V | 145 ns | ||||||||||||||||||||||||||||||||||||||||||
| VS-20ETS12FPPBF | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 1999 | Obsolete | 1 (Unlimited) | 2 | EAR99 | 150°C | -40°C | ROHS3 Compliant | No | 2 | UL APPROVED | TO-220-2 Full Pack | Through Hole | 8541.10.00.80 | e3 | MATTE TIN OVER NICKEL | 20ETS12 | SILICON | 1 | Standard | HIGH VOLTAGE | 1 | 20A | 1.1V | ISOLATED | 300A | Single | Standard Recovery >500ns, > 200mA (Io) | 100μA @ 1200V | 1.1V @ 20A | -40°C~150°C | 1.2kV | 20A | 100μA | 1.2kV | 300A | 300A | 1200V | 0.5 °C/W | 1.2kV | ||||||||||||||||||||||||||||||||||||
| UGF12JT-E3/45 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2016 | yes | Obsolete | 1 (Unlimited) | 2 | EAR99 | 150°C | -55°C | ROHS3 Compliant | No | 2 | FREE WHEELING DIODE | TO-220-2 Full Pack, Isolated Tab | Through Hole | 8541.10.00.80 | e3 | Matte Tin (Sn) | 260 | 40 | 3 | Rectifier Diodes | SILICON | 1 | Standard | EFFICIENCY | 1 | 12A | 135A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 30μA @ 600V | 1.75V @ 12A | -55°C~150°C | 600V | 12A | 30μA | 600V | 135A | 50 ns | 600V | 50 ns | ||||||||||||||||||||||||||||||||||||
| UG8JTHE3/45 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 20 Weeks | Through Hole | Tube | 2011 | yes | Obsolete | 1 (Unlimited) | 2 | EAR99 | 150°C | -55°C | 10.54mm | ROHS3 Compliant | No | 2 | HIGH RELIABILITY | TO-220-2 | 15.32mm | 4.7mm | Through Hole | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Rectifier Diodes | SILICON | 1 | Standard | 8A | EFFICIENCY | 1 | 8A | CATHODE | 100A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 30μA @ 600V | 1.75V @ 8A | -55°C~150°C | 600V | 8A | 30μA | 600V | 100A | 50 ns | 480V | 500 ns |