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Vishay Semiconductor Diodes Division(13890)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Max Operating Temperature | Min Operating Temperature | Diameter | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Mounting Type | Voltage - Rated DC | Capacitance | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Surface Mount | JESD-30 Code | Operating Temperature (Max) | Subcategory | Qualification Status | Diode Element Material | Number of Elements | Configuration | Diode Type | Output Current-Max | Application | Number of Phases | Rep Pk Reverse Voltage-Max | JEDEC-95 Code | Non-rep Pk Forward Current-Max | Output Current | Polarity | Forward Current | Forward Voltage | Case Connection | Max Surge Current | Element Configuration | Max Reverse Leakage Current | Supplier Device Package | Speed | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Operating Temperature - Junction | Max Reverse Voltage (DC) | Average Rectified Current | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Max Forward Surge Current (Ifsm) | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Reverse Current-Max | Natural Thermal Resistance | Reverse Recovery Time | Reverse Voltage | Recovery Time | Capacitance @ Vr, F |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BYV27-200-TAP | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tape & Box (TB) | yes | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -55°C | 4.2mm | ROHS3 Compliant | Silver, Tin | No | 2 | SOD-57, Axial | Unknown | 3.6mm | 3.6mm | Through Hole | 8541.10.00.80 | e2 | Tin/Silver (Sn96.5Ag3.5) | WIRE | BYV27-200 | 2 | Rectifier Diodes | SILICON | 1 | Avalanche | 2A | EFFICIENCY | 1 | 2A | 1.07V | ISOLATED | 50A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 1μA @ 200V | 1.07V @ 3A | -55°C~175°C | 200V | 2A | 1μA | 200V | 50A | 50A | 25 ns | 200V | 25 ns | ||||||||||||||||||||||||||||||||||
| V20PW45HM3/I | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Tape & Reel (TR) | Automotive, AEC-Q101, eSMP®, TMBS® | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | FREE WHEELING DIODE, LOW POWER LOSS | TO-252-3, DPak (2 Leads + Tab), SC-63 | unknown | Surface Mount | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PSSO-G2 | 150°C | SILICON | 1 | SINGLE | Schottky | EFFICIENCY | 1 | 45V | TO-252AE | 20A | CATHODE | Fast Recovery =< 500ns, > 200mA (Io) | 1.5mA @ 45V | 610mV @ 20A | -40°C~150°C | 45V | 1500μA | 3000pF @ 4V 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||
| SS3H9-E3/9AT | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 11 Weeks | Surface Mount | Tape & Reel (TR) | 2014 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | ROHS3 Compliant | No | 2 | FREE WHEELING DIODE, LOW POWER LOSS, LOW LEAKAGE CURRENT | DO-214AB, SMC | Surface Mount | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 40 | SS3H9 | 2 | Rectifier Diodes | SILICON | 1 | Schottky | 3A | EFFICIENCY | 1 | 3A | 800mV | 100A | Single | 20μA | Fast Recovery =< 500ns, > 200mA (Io) | 20μA @ 90V | 800mV @ 3A | -65°C~175°C | 90V | 3A | 20μA | 90V | 100A | ||||||||||||||||||||||||||||||||||||||
| SS3H10-M3/9AT | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 11 Weeks | Surface Mount | Tape & Reel (TR) | 2014 | yes | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, LOW POWER LOSS | DO-214AB, SMC | not_compliant | Surface Mount | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 30 | R-PDSO-C2 | 175°C | SILICON | 1 | SINGLE | Schottky | 3A | EFFICIENCY | 1 | 100A | Fast Recovery =< 500ns, > 200mA (Io) | 20μA @ 100V | 800mV @ 3A | -65°C~175°C | 100V | 3A | 100V | 20μA | ||||||||||||||||||||||||||||||||||||||||||||||
| RS3K-E3/9AT | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 11 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -55°C | ROHS3 Compliant | Lead Free | No | 2 | FREE WHEELING DIODE | DO-214AB, SMC | Surface Mount | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 30 | RS3K | 2 | Rectifier Diodes | SILICON | 1 | Standard | 3A | EFFICIENCY | 1 | 3A | 1.3V | 100A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 10μA @ 800V | 1.3V @ 2.5A | -55°C~150°C | 800V | 3A | 10μA | 800V | 100A | 500 ns | 800V | 500 ns | 34pF @ 4V 1MHz | ||||||||||||||||||||||||||||||||||
| SS10PH10-M3/87A | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2014 | eSMP® | Active | 1 (Unlimited) | 3 | EAR99 | 175°C | -55°C | ROHS3 Compliant | No | 3 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | TO-277, 3-PowerDFN | Surface Mount | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | SS10PH10 | 3 | Rectifier Diodes | SILICON | 1 | Schottky | HIGH VOLTAGE | 1 | TO-277A | 10A | 880mV | CATHODE | 200A | Common Anode | 10μA | Fast Recovery =< 500ns, > 200mA (Io) | 10μA @ 100V | 880mV @ 10A | -55°C~175°C | 100V | 10A | 10μA | 100V | 200A | 270pF @ 4V 1MHz | ||||||||||||||||||||||||||||||||||||||
| V8P10HM3_A/H | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2016 | Automotive, AEC-Q101, eSMP®, TMBS® | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | FREE WHEELING DIODE , LOW POWER LOSS | TO-277, 3-PowerDFN | unknown | Surface Mount | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | R-PDSO-F3 | 150°C | SILICON | 1 | SINGLE | Schottky | 8A | EFFICIENCY | 1 | TO-277A | 150A | CATHODE | Fast Recovery =< 500ns, > 200mA (Io) | 70μA @ 100V | 680mV @ 8A | -40°C~150°C | 100V | 8A | 100V | 70μA | ||||||||||||||||||||||||||||||||||||||||||||||
| SBYV28-200-E3/73 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tape & Box (TB) | 2013 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -55°C | ROHS3 Compliant | No | 2 | LOW LEAKAGE CURRENT, FREE WHEELING DIODE | DO-201AD, Axial | Through Hole | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | SBYV28-200 | 2 | Rectifier Diodes | SILICON | 1 | SINGLE | Standard | EFFICIENCY | 1 | 3.5A | ISOLATED | 90A | Fast Recovery =< 500ns, > 200mA (Io) | 5μA @ 200V | 1.1V @ 3.5A | -55°C~150°C | 200V | 3.5A | 5μA | 200V | 90A | 20 ns | 200V | 20 ns | 20pF @ 4V 1MHz | |||||||||||||||||||||||||||||||||||||||
| ES3F-E3/9AT | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 20 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -55°C | ROHS3 Compliant | No | 2 | FREE WHEELING DIODE | DO-214AB, SMC | Surface Mount | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 40 | ES3F | 2 | Rectifier Diodes | SILICON | 1 | Standard | 3A | EFFICIENCY | 1 | 3A | 100A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 10μA @ 300V | 1.1V @ 3A | -55°C~150°C | 300V | 3A | 10μA | 300V | 100A | 50 ns | 300V | 50 ns | 30pF @ 4V 1MHz | ||||||||||||||||||||||||||||||||||||
| ES3B-E3/9AT | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 20 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -55°C | ROHS3 Compliant | No | 2 | FREE WHEELING DIODE, LOW POWER LOSS | DO-214AB, SMC | Surface Mount | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 30 | ES3B | 2 | Rectifier Diodes | SILICON | 1 | Standard | 3A | EFFICIENCY | 1 | 3A | 900mV | 100A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 10μA @ 100V | 900mV @ 3A | -55°C~150°C | 100V | 3A | 10μA | 100V | 100A | 30 ns | 100V | 30 ns | 45pF @ 4V 1MHz | |||||||||||||||||||||||||||||||||||
| ES3B-E3/57T | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 21 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | yes | Active | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 150°C | -55°C | 7.11mm | ROHS3 Compliant | Lead Free | 3A | No | 2 | FREE WHEELING DIODE, LOW POWER LOSS | DO-214AB, SMC | Unknown | 2.42mm | 6.22mm | Surface Mount | 100V | 45pF | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 30 | ES3B | 2 | Rectifier Diodes | SILICON | 1 | Standard | EFFICIENCY | 1 | 3A | 3A | 900mV | 100A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 10μA @ 100V | 900mV @ 3A | -55°C~150°C | 100V | 3A | 10μA | 100V | 100A | 100A | 20 ns | 100V | 30 ns | 45pF @ 4V 1MHz | |||||||||||||||||||||||||
| RGP02-12E-E3/73 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tape & Box (TB) | 2015 | SUPERECTIFIER® | Active | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | Tin | No | 2 | DO-204AL, DO-41, Axial | Through Hole | RGP02-12 | Standard | 1.8V | 20A | Single | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 5μA @ 1200V | 1.8V @ 100mA | -65°C~175°C | 1.2kV | 500mA | 5μA | 1.2kV | 20A | 1200V | 500mA | 300 ns | 1.2kV | 300 ns | ||||||||||||||||||||||||||||||||||||||||||||||||||
| BYG22D-E3/TR3 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -55°C | 4.5mm | ROHS3 Compliant | Tin | No | 2 | FREE WHEELING DIODE | DO-214AC, SMA | 2.09mm | 2.79mm | Surface Mount | 8541.10.00.80 | e3 | DUAL | C BEND | 260 | 40 | BYG22D | 2 | Rectifier Diodes | SILICON | 1 | Avalanche | 2A | ULTRA FAST SOFT RECOVERY | 1 | 2A | 1.1V | 35A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 1μA @ 200V | 1.1V @ 2A | -55°C~150°C | 200V | 2A | 1μA | 200V | 35A | 35A | 25 ns | 200V | 25 ns | ||||||||||||||||||||||||||||||||
| VSKY10201406-G4-08 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Tape & Reel (TR) | 2017 | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | 0502 (1406 Metric) | unknown | Surface Mount | NOT SPECIFIED | NOT SPECIFIED | Schottky | Fast Recovery =< 500ns, > 200mA (Io) | 100μA @ 20V | 450mV @ 1A | 150°C Max | 20V | 1A | 240pF @ 0V 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MUR460-E3/54 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tape & Reel (TR) | 2011 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | 5.3mm | 9.5mm | ROHS3 Compliant | Lead Free | No | 2 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | DO-201AD, Axial | Unknown | Through Hole | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | MUR460 | 2 | Rectifier Diodes | SILICON | 1 | Standard | 4A | EFFICIENCY | 1 | 4A | 1.05V | ISOLATED | 150A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 10μA @ 600V | 1.28V @ 4A | -65°C~175°C | 600V | 4A | 10μA | 600V | 150A | 150A | 75 ns | 600V | 75 ns | |||||||||||||||||||||||||||||||||
| SB3H90-E3/73 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tape & Box (TB) | 2012 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -55°C | ROHS3 Compliant | Lead Free | 3A | No | 2 | FREE WHEELING DIODE, LOW POWER LOSS | DO-201AD, Axial | 6mm | Through Hole | 90V | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | SB3H90 | 2 | Rectifier Diodes | SILICON | 1 | Schottky | EFFICIENCY | 1 | 3A | Standard | 3A | 800mV | ISOLATED | 100A | Single | 20μA | Fast Recovery =< 500ns, > 200mA (Io) | 20μA @ 90V | 800mV @ 3A | 175°C Max | 90V | 3A | 20μA | 90V | 100A | |||||||||||||||||||||||||||||||||||
| UF5401-E3/73 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tape & Box (TB) | 2012 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -55°C | ROHS3 Compliant | No | 2 | FREE WHEELING DIODE | DO-201AD, Axial | Through Hole | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | UF5401 | 2 | Rectifier Diodes | SILICON | 1 | Standard | 3A | EFFICIENCY | 1 | 3A | 1V | ISOLATED | 150A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 10μA @ 100V | 1V @ 3A | -55°C~150°C | 100V | 3A | 10μA | 100V | 150A | 50 ns | 100V | 50 ns | 45pF @ 4V 1MHz | |||||||||||||||||||||||||||||||||||||
| VSSC8L45-M3/9AT | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 11 Weeks | Surface Mount | Tape & Reel (TR) | 2015 | TMBS® | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | FREE WHEELING DIODE, LOW POWER LOSS | DO-214AB, SMC | unknown | Surface Mount | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | NOT SPECIFIED | NOT SPECIFIED | R-PDSO-C2 | 150°C | SILICON | 1 | SINGLE | Schottky | EFFICIENCY | 1 | 140A | Fast Recovery =< 500ns, > 200mA (Io) | 1.85mA @ 45V | 420mV @ 4A | -40°C~150°C | 45V | 4.9A | 45V | 1850μA | 1216pF @ 4V 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||
| FES16DT-E3/45 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 20 Weeks | Through Hole | Tube | 2009 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -65°C | 10.54mm | ROHS3 Compliant | Lead Free | No | 2 | FREE WHEELING DIODE | TO-220-2 | 8.89mm | 4.7mm | Through Hole | 8541.10.00.80 | e3 | Matte Tin (Sn) | FES16D | 3 | Rectifier Diodes | SILICON | 1 | Standard | EFFICIENCY | 1 | 16A | 975mV | CATHODE | 250A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 10μA @ 200V | 975mV @ 16A | -65°C~150°C | 200V | 16A | 10μA | 200V | 250A | 250A | 35 ns | 200V | 35 ns | |||||||||||||||||||||||||||||||||||
| VF30100SG-E3/4W | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Through Hole | Tube | 2016 | TMBS® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 150°C | -40°C | 10.26mm | ROHS3 Compliant | Lead Free | No | 3 | FREE WHEELING DIODE, LOW POWER LOSS | TO-220-3 Full Pack, Isolated Tab | 15.24mm | 4.83mm | Through Hole | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | VF30100S | 3 | Rectifier Diodes | SILICON | 1 | Schottky | EFFICIENCY | 1 | TO-220AB | 30A | 1V | 250A | Common Anode | 350μA | Fast Recovery =< 500ns, > 200mA (Io) | 350μA @ 100V | 1V @ 30A | -40°C~150°C | 100V | 30A | 350μA | 100V | 250A | ||||||||||||||||||||||||||||||||||||
| VS-1N3673A | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Chassis, Stud | Bulk | 2008 | Active | 1 (Unlimited) | 200°C | -65°C | ROHS3 Compliant | No | DO-203AA, DO-4, Stud | 31.8mm | Chassis, Stud Mount | 1N3673 | Standard | 12A | 1.35V | 240A | Single | DO-203AA | Standard Recovery >500ns, > 200mA (Io) | 600μA @ 1000V | 1.35V @ 12A | -65°C~200°C | 1kV | 12A | 600μA | 1kV | 240A | 240A | 1000V | 12A | 0.5 °C/W | 1kV | |||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-16F60 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Chassis, Stud | Bulk | 2008 | Active | 1 (Unlimited) | 1 | EAR99 | 175°C | -65°C | 31.8mm | ROHS3 Compliant | No | 2 | DO-203AA, DO-4, Stud | 11mm | Chassis, Stud Mount | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | O-MUPM-D1 | SILICON | 1 | Standard | GENERAL PURPOSE | 1 | 16A | CATHODE | 370A | Single | Standard Recovery >500ns, > 200mA (Io) | 12mA @ 600V | 1.23V @ 50A | -65°C~175°C | 600V | 16A | 12mA | 600V | 370A | 370A | 0.5 °C/W | 600V | |||||||||||||||||||||||||||||||||||||||||
| VS-T70HF40 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Chassis Mount, Panel, Screw | Bulk | 1997 | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -40°C | 41mm | ROHS3 Compliant | 70A | 2 | UL APPROVED | D-55 T-Module | Unknown | 25mm | 27mm | Chassis Mount | 8541.10.00.80 | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | SILICON | 1 | Standard | HIGH VOLTAGE POWER | 1 | 70A | 1.35V | ISOLATED | 1.25kA | Single | Standard Recovery >500ns, > 200mA (Io) | 15mA @ 400V | 400V | 70A | 15mA | 400V | 1.25kA | 1.25kA | 400V | |||||||||||||||||||||||||||||||||||||||||
| VS-85HF20 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Chassis, Stud | Bulk | 2011 | Active | 1 (Unlimited) | 1 | EAR99 | 180°C | -65°C | 36.5mm | ROHS3 Compliant | No | 2 | DO-203AB, DO-5, Stud | Unknown | 17.35mm | Chassis, Stud Mount | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | O-MUPM-D1 | SILICON | 1 | Standard | GENERAL PURPOSE | 1 | 85A | 1.2V | CATHODE | 1.8kA | Single | Standard Recovery >500ns, > 200mA (Io) | 9mA @ 200V | 1.2V @ 267A | -65°C~150°C | 200V | 85A | 9mA | 200V | 1.8kA | 1.369kA | 0.25 °C/W | 500 ns | 200V | ||||||||||||||||||||||||||||||||||||||
| VS-25FR120 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Chassis, Stud | Bulk | 2008 | Active | 1 (Unlimited) | 1 | EAR99 | 175°C | -65°C | 12.69mm | ROHS3 Compliant | 2 | DO-203AA, DO-4, Stud | Unknown | 31.8mm | 11mm | Chassis, Stud Mount | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | NOT SPECIFIED | O-MUPM-D1 | SILICON | 1 | Standard, Reverse Polarity | GENERAL PURPOSE | 1 | 25A | 1.3V | ANODE | 373A | Single | Standard Recovery >500ns, > 200mA (Io) | 12mA @ 1200V | 1.3V @ 78A | -65°C~175°C | 1.2kV | 25A | 12mA | 1.2kV | 373A | 373A | 1200V | 0.5 °C/W | 1.2kV | ||||||||||||||||||||||||||||||||||||
| VS-1N2128A | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Bulk | 2017 | Active | 1 (Unlimited) | 1 | EAR99 | ROHS3 Compliant | LOW LEAKAGE CURRENT | DO-203AB, DO-5, Stud | unknown | Chassis, Stud Mount | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | NOT SPECIFIED | 1N2128 | NO | O-MUPM-D1 | 200°C | Rectifier Diodes | SILICON | 1 | SINGLE | Standard | 60A | POWER | 1 | 50V | 900A | CATHODE | Standard Recovery >500ns, > 200mA (Io) | 10mA @ 50V | 1.3V @ 188A | -65°C~200°C | 50V | 60A | 2500μA | ||||||||||||||||||||||||||||||||||||||||||||
| MBRB1645-E3/45 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 27 Weeks | Surface Mount | Tube | 2013 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -65°C | ROHS3 Compliant | No | 3 | FREE WHEELING DIODE, LOW POWER LOSS | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Unknown | Surface Mount | 8541.10.00.80 | e3 | Matte Tin (Sn) | GULL WING | 245 | 30 | MBRB1645 | 3 | R-PSSO-G2 | Rectifier Diodes | SILICON | 1 | Schottky | EFFICIENCY | 1 | 16A | 630mV | CATHODE | Single | Fast Recovery =< 500ns, > 200mA (Io) | 200μA @ 45V | 630mV @ 16A | -65°C~150°C | 45V | 16A | 200μA | 45V | 150A | 150A | ||||||||||||||||||||||||||||||||||||||
| MBRF745-E3/45 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 22 Weeks | Through Hole | Tube | 2011 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -65°C | ROHS3 Compliant | No | 2 | FREE WHEELING DIODE, LOW POWER LOSS | TO-220-2 Full Pack, Isolated Tab | Through Hole | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Rectifier Diodes | SILICON | 1 | Schottky | EFFICIENCY | 1 | 7.5A | 840mV | 150A | Single | 100μA | Fast Recovery =< 500ns, > 200mA (Io) | 100μA @ 45V | 840mV @ 15A | -65°C~150°C | 45V | 7.5A | 100μA | 45V | 150A | ||||||||||||||||||||||||||||||||||||||||||||
| GI1404-E3/45 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 20 Weeks | Through Hole | Tube | 2011 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -65°C | ROHS3 Compliant | No | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | TO-220-2 | Through Hole | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | R-PSFM-T2 | Rectifier Diodes | SILICON | 1 | Standard | 8A | EFFICIENCY | 1 | TO-220AC | 8A | CATHODE | 125A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 5μA @ 200V | 975mV @ 8A | -65°C~150°C | 200V | 8A | 5μA | 200V | 125A | 35 ns | 200V | 35 ns | ||||||||||||||||||||||||||||||||||||||||
| MBR10100-M3/4W | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Through Hole | Tube | 2016 | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -65°C | ROHS3 Compliant | 2 | FREE WHEELING DIODE, LOW POWER LOSS | TO-220-2 | unknown | Through Hole | 8541.10.00.80 | NOT SPECIFIED | NOT SPECIFIED | 3 | Rectifier Diodes | Not Qualified | SILICON | 1 | Schottky | EFFICIENCY | 1 | 10A | CATHODE | Single | Fast Recovery =< 500ns, > 200mA (Io) | 100μA @ 100V | 800mV @ 10A | -65°C~150°C | 100V | 10A | 100μA | 100V | 150A |