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Vishay Semiconductor Diodes Division(13890)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Max Operating Temperature | Min Operating Temperature | Diameter | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Mounting Type | Weight | Manufacturer Package Identifier | Capacitance | Current | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | JESD-30 Code | Operating Temperature (Max) | Subcategory | Qualification Status | Reference Standard | Voltage | Diode Element Material | Number of Elements | Configuration | Diode Type | Output Current-Max | Application | Number of Phases | JEDEC-95 Code | Non-rep Pk Forward Current-Max | Forward Current | Forward Voltage | Case Connection | Max Surge Current | Element Configuration | Max Reverse Leakage Current | Speed | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Operating Temperature - Junction | Max Reverse Voltage (DC) | Average Rectified Current | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Max Forward Surge Current (Ifsm) | Voltage - DC Reverse (Vr) (Max) | Reverse Current-Max | Reverse Recovery Time | Power Dissipation-Max | Reverse Voltage | Recovery Time | Capacitance @ Vr, F | Max Junction Temperature (Tj) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| EGF1B-E3/67A | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | SUPERECTIFIER® | yes | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | ROHS3 Compliant | No | 2 | FREE WHEELING DIODE | DO-214BA | Surface Mount | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | 250 | 30 | EGF1B | 2 | Rectifier Diodes | SILICON | 1 | Standard | 1A | 1A | 1V | 30A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 5μA @ 100V | 1V @ 1A | -65°C~175°C | 100V | 1A | 5μA | 100V | 30A | 50 ns | 100V | 50 ns | 15pF @ 4V 1MHz | ||||||||||||||||||||||||||||||||||
| SS5P6HM3_A/H | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2016 | Automotive, AEC-Q101 | Active | 1 (Unlimited) | 3 | EAR99 | 150°C | -55°C | ROHS3 Compliant | Lead Free | Tin | 3 | FREE WHEELING DIODE, LOW POWER LOSS | TO-277, 3-PowerDFN | not_compliant | Surface Mount | 8541.10.00.80 | e3 | DUAL | FLAT | 260 | 30 | SILICON | 1 | Schottky | 5A | EFFICIENCY | 1 | TO-277A | 5A | CATHODE | Common Anode | Fast Recovery =< 500ns, > 200mA (Io) | 150μA @ 60V | 690mV @ 5A | -55°C~150°C | 60V | 5A | 60V | 150A | 150μA | 200pF @ 4V 1MHz | ||||||||||||||||||||||||||||||||||||||
| BYV26D-TAP | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tape & Box (TB) | 2016 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -55°C | ROHS3 Compliant | Lead Free | Silver, Tin | No | 2 | SOD-57, Axial | Through Hole | 8541.10.00.80 | e2 | Tin/Silver (Sn96.5Ag3.5) | WIRE | 2 | Rectifier Diodes | SILICON | 1 | Avalanche | 1A | 1A | 2.5V | ISOLATED | 30A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 5μA @ 800V | 2.5V @ 1A | -55°C~175°C | 800V | 1A | 5μA | 800V | 30A | 75 ns | 800V | 75 ns | ||||||||||||||||||||||||||||||||||||||
| SGL41-60HE3/96 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -55°C | ROHS3 Compliant | No | 2 | LOW POWER LOSS, FREE WHEELING DIODE, HIGH RELIABILITY | DO-213AB, MELF | Surface Mount | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | END | WRAP AROUND | 250 | 40 | SGL41-60 | 2 | Rectifier Diodes | SILICON | 1 | Schottky | 1A | 1A | ISOLATED | 30A | Single | 500μA | Fast Recovery =< 500ns, > 200mA (Io) | 500μA @ 60V | 700mV @ 1A | -55°C~150°C | 60V | 1A | 500μA | 60V | 30A | 80pF @ 4V 1MHz | |||||||||||||||||||||||||||||||||||||
| U3D-E3/57T | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | yes | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -55°C | ROHS3 Compliant | Tin | No | 2 | FREE WHEELING DIODE, LOW POWER LOSS | DO-214AB, SMC | Surface Mount | 8541.10.00.80 | e3 | DUAL | C BEND | 260 | 40 | U3D | 2 | Rectifier Diodes | SILICON | 1 | Standard | 3A | ULTRA FAST RECOVERY | 1 | 3A | 900mV | 100A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 10μA @ 200V | 900mV @ 3A | -55°C~150°C | 200V | 2A | 10μA | 200V | 100A | 20 ns | 200V | 30 ns | ||||||||||||||||||||||||||||||||||||
| GP30J-E3/73 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 22 Weeks | Through Hole | Tape & Box (TB) | 2009 | SUPERECTIFIER® | yes | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | ROHS3 Compliant | No | 2 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE | DO-201AD, Axial | Through Hole | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | GP30J | 2 | Rectifier Diodes | SILICON | 1 | Standard | 3A | HIGH VOLTAGE | 1 | ISOLATED | 125A | Single | Standard Recovery >500ns, > 200mA (Io) | 5μA @ 600V | 1.1V @ 3A | -65°C~175°C | 600V | 3A | 5μA | 600V | 125A | 5 μs | 600V | 5 μs | |||||||||||||||||||||||||||||||||||||
| BYM36E-TAP | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 17 Weeks | Through Hole | Tape & Box (TB) | 2016 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -55°C | ROHS3 Compliant | Silver, Tin | No | 2 | SOD-64, Axial | Through Hole | 8541.10.00.80 | e2 | Tin/Silver (Sn/Ag) | WIRE | 260 | 30 | Rectifier Diodes | SILICON | 1 | Avalanche | 1 | 2.9A | 1.78V | ISOLATED | 65A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 5μA @ 1000V | 1.78V @ 3A | -55°C~175°C | 1kV | 2.9A | 5μA | 1kV | 65A | 1000V | 150 ns | 1kV | 150 ns | |||||||||||||||||||||||||||||||||||||
| RGP30M-E3/73 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 22 Weeks | Through Hole | Tape & Box (TB) | 2016 | SUPERECTIFIER® | yes | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | ROHS3 Compliant | No | 2 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | DO-201AD, Axial | Through Hole | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | RGP30M | 2 | Rectifier Diodes | SILICON | 1 | Standard | 3A | EFFICIENCY | 1 | 1.3V | ISOLATED | 125A | Single | 5μA | Fast Recovery =< 500ns, > 200mA (Io) | 5μA @ 1000V | 1.3V @ 3A | -65°C~175°C | 1kV | 3A | 5μA | 1kV | 125A | 1000V | 500 ns | 500 ns | |||||||||||||||||||||||||||||||||||
| P600G-E3/73 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tape & Box (TB) | 2012 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -50°C | ROHS3 Compliant | No | 2 | FREE WHEELING DIODE | P600, Axial | Through Hole | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | P600G | 2 | Rectifier Diodes | SILICON | 1 | Standard | 6A | GENERAL PURPOSE | 1 | 22A | 1.3V | ISOLATED | 400A | Single | Standard Recovery >500ns, > 200mA (Io) | 5μA @ 400V | 900mV @ 6A | -50°C~150°C | 400V | 6A | 5μA | 400V | 400A | 2.5 μs | 400V | 2.5 μs | 150pF @ 4V 1MHz | |||||||||||||||||||||||||||||||||||
| GI756-E3/73 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tape & Box (TB) | 2014 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -50°C | ROHS3 Compliant | No | 600 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | P600, Axial | Through Hole | 6A | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | GI756 | 2 | O-PALF-W2 | Rectifier Diodes | 600V | SILICON | 1 | Standard | GENERAL PURPOSE | 1 | 6A | 1.25V | ISOLATED | 400A | Single | Standard Recovery >500ns, > 200mA (Io) | 5μA @ 600V | 900mV @ 6A | -50°C~150°C | 600V | 6A | 5μA | 600V | 400A | 2.5 μs | 600V | 2.5 μs | 150pF @ 4V 1MHz | |||||||||||||||||||||||||||||||||
| RGP10B-E3/54 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 22 Weeks | Through Hole | Tape & Reel (TR) | 2016 | SUPERECTIFIER® | yes | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | ROHS3 Compliant | No | 2 | FREE WHEELING DIODE | DO-204AL, DO-41, Axial | Through Hole | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | RGP10B | 2 | Rectifier Diodes | SILICON | 1 | Standard | 1A | 1.3V | ISOLATED | 30A | Single | 5μA | Fast Recovery =< 500ns, > 200mA (Io) | 5μA @ 100V | 1.3V @ 1A | -65°C~175°C | 100V | 1A | 5μA | 100V | 30A | 150 ns | 150 ns | 15pF @ 4V 1MHz | |||||||||||||||||||||||||||||||||||||
| BA157GP-E3/54 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 22 Weeks | Through Hole | Tape & Reel (TR) | 2014 | SUPERECTIFIER® | yes | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | ROHS3 Compliant | Tin | No | 2 | LOW LEAKAGE CURRENT | DO-204AL, DO-41, Axial | Through Hole | 8541.10.00.80 | e3 | WIRE | BA157 | 2 | Rectifier Diodes | SILICON | 1 | Standard | 1A | 1.3V | ISOLATED | 20A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 5μA @ 400V | 1.3V @ 1A | -65°C~175°C | 400V | 1A | 5μA | 400V | 20A | 150 ns | 400V | 150 ns | 15pF @ 4V 1MHz | |||||||||||||||||||||||||||||||||||||
| MPG06J-E3/54 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Through Hole | Tape & Reel (TR) | 2012 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -55°C | ROHS3 Compliant | Lead Free | No | 2 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | MPG06, Axial | Through Hole | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | MPG06 | 3 | Rectifier Diodes | SILICON | 1 | Standard | 1A | 1A | 1.1V | ISOLATED | 40A | Single | Standard Recovery >500ns, > 200mA (Io) | 5μA @ 600V | 1.1V @ 1A | -55°C~150°C | 600V | 1A | 5μA | 600V | 40A | 600 ns | 800V | 600 ns | 10pF @ 4V 1MHz | ||||||||||||||||||||||||||||||||||||
| 1N5817-E3/73 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tape & Box (TB) | 2017 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 125°C | -65°C | ROHS3 Compliant | Tin | No | 2 | FREE WHEELING DIODE | DO-204AL, DO-41, Axial | Through Hole | 8541.10.00.80 | e3 | WIRE | 1N5817 | 2 | Rectifier Diodes | SILICON | 1 | Schottky | 1A | 1A | 450mV | ISOLATED | 25A | Single | 1mA | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 20V | 450mV @ 1A | -65°C~125°C | 20V | 1A | 1mA | 20V | 25A | ||||||||||||||||||||||||||||||||||||||||
| 1N4937GP-E3/73 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 22 Weeks | Through Hole | Tape & Box (TB) | 2012 | SUPERECTIFIER® | yes | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | ROHS3 Compliant | Tin | No | 2 | FREE WHEELING DIODE, HIGH RELIABILITY | DO-204AL, DO-41, Axial | Through Hole | 8541.10.00.80 | e3 | WIRE | 1N4937 | 2 | Rectifier Diodes | SILICON | 1 | Standard | 1A | ISOLATED | 30A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 5μA @ 600V | 1.2V @ 1A | -65°C~175°C | 600V | 1A | 5μA | 600V | 30A | 200 ns | 600V | 200 ns | 15pF @ 4V 1MHz | ||||||||||||||||||||||||||||||||||||||
| RGP10G-E3/73 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 22 Weeks | Through Hole | Tape & Box (TB) | 2016 | SUPERECTIFIER® | yes | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | ROHS3 Compliant | No | 2 | FREE WHEELING DIODE | DO-204AL, DO-41, Axial | Through Hole | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | RGP10G | 2 | Rectifier Diodes | SILICON | 1 | Standard | 1A | 1.3V | ISOLATED | 30A | Single | 5μA | Fast Recovery =< 500ns, > 200mA (Io) | 5μA @ 400V | 1.3V @ 1A | -65°C~175°C | 400V | 1A | 5μA | 400V | 30A | 150 ns | 150 ns | 15pF @ 4V 1MHz | |||||||||||||||||||||||||||||||||||||
| S1BHE3_A/H | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 11 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -55°C | ROHS3 Compliant | Lead Free | No | 2 | FREE WHEELING DIODE | DO-214AC, SMA | Surface Mount | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 30 | S1B | Rectifier Diodes | AEC-Q101 | SILICON | 1 | Standard | 1A | 1.1V | Single | Standard Recovery >500ns, > 200mA (Io) | 1μA @ 100V | 1.1V @ 1A | -55°C~150°C | 100V | 1A | 100V | 40A | 1.8 μs | 12pF @ 4V 1MHz | |||||||||||||||||||||||||||||||||||||||
| 1N4150W-HE3-08 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2017 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -55°C | ROHS3 Compliant | No | 2 | SOD-123 | Surface Mount | 8541.10.00.70 | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | 2 | AEC-Q101 | SILICON | 1 | Standard | 200mA | Single | Small Signal =< 200mA (Io), Any Speed | 100nA @ 50V | 1V @ 200mA | -55°C~150°C | 50V | 200mA | 50V | 4 ns | 0.41W | 2.5pF @ 0V 1MHz | |||||||||||||||||||||||||||||||||||||||||||
| 1N4936GP-E3/73 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 22 Weeks | Through Hole | Tape & Box (TB) | 2012 | SUPERECTIFIER® | yes | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | ROHS3 Compliant | Tin | No | 2 | FREE WHEELING DIODE, HIGH RELIABILITY | DO-204AL, DO-41, Axial | Through Hole | 8541.10.00.80 | e3 | WIRE | 1N4936 | 2 | Rectifier Diodes | SILICON | 1 | Standard | 1A | 1.2V | ISOLATED | 30A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 5μA @ 400V | 1.2V @ 1A | -65°C~175°C | 400V | 1A | 5μA | 400V | 30A | 200 ns | 400V | 200 ns | 15pF @ 4V 1MHz | |||||||||||||||||||||||||||||||||||||
| GP10Q-E3/54 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 22 Weeks | Through Hole | Tape & Reel (TR) | 2016 | SUPERECTIFIER® | yes | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -65°C | ROHS3 Compliant | No | 2 | FREE WHEELING DIODE | DO-204AL, DO-41, Axial | Through Hole | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | GP10Q | 2 | Rectifier Diodes | SILICON | 1 | Standard | 1A | 1A | 1.2V | ISOLATED | 25A | Single | Standard Recovery >500ns, > 200mA (Io) | 5μA @ 1200V | 1.2V @ 1A | -65°C~150°C | 1.2kV | 1A | 5μA | 1.2kV | 25A | 1200V | 3 μs | 1.2kV | 3 μs | 7pF @ 4V 1MHz | |||||||||||||||||||||||||||||||||||
| GP10K-E3/54 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 22 Weeks | Through Hole | Tape & Reel (TR) | 2011 | SUPERECTIFIER® | yes | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | 2.7mm | 5.2mm | ROHS3 Compliant | Lead Free | No | 2 | FREE WHEELING DIODE | DO-204AL, DO-41, Axial | Through Hole | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | GP10K | 2 | Rectifier Diodes | SILICON | 1 | Standard | 1A | 1A | 1.2V | ISOLATED | 30A | Single | Standard Recovery >500ns, > 200mA (Io) | 5μA @ 800V | 1.2V @ 1A | -65°C~175°C | 800V | 1A | 5μA | 800V | 30A | 30A | 3 μs | 800V | 3 μs | 7pF @ 4V 1MHz | ||||||||||||||||||||||||||||||||
| SS3P5-M3/84A | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | eSMP® | yes | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -55°C | 3.61mm | ROHS3 Compliant | No | 2 | FREE WHEELING DIODE, LOW POWER LOSS | DO-220AA | Unknown | 1.15mm | 2.18mm | Surface Mount | 24.012046mg | SS3P5-M3/84A | 80pF | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | 2 | Rectifier Diodes | SILICON | 1 | Schottky | 3A | EFFICIENCY | 1 | 3A | 780mV | CATHODE | Single | Fast Recovery =< 500ns, > 200mA (Io) | 100μA @ 50V | 780mV @ 3A | -55°C~150°C | 50V | 3A | 100μA | 50V | 45A | 45A | 50V | 80pF @ 4V 1MHz | 150°C | ||||||||||||||||||||||||||||
| BYM10-800-E3/97 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 19 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | SUPERECTIFIER® | yes | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | ROHS3 Compliant | Tin | No | 2 | FREE WHEELING DIODE | DO-213AB, MELF (Glass) | Surface Mount | 8541.10.00.80 | e3 | END | WRAP AROUND | 250 | 40 | BYM10-800 | 2 | Rectifier Diodes | SILICON | 1 | Standard | 1A | 1A | 1.2V | ISOLATED | 30A | Single | Standard Recovery >500ns, > 200mA (Io) | 10μA @ 800V | 1.2V @ 1A | -65°C~175°C | 800V | 1A | 10μA | 800V | 30A | 800V | 8pF @ 4V 1MHz | |||||||||||||||||||||||||||||||||||
| EGP10C-E3/54 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 22 Weeks | Through Hole | Tape & Reel (TR) | 2016 | SUPERECTIFIER® | yes | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -65°C | ROHS3 Compliant | Lead Free | No | 2 | FREE WHEELING DIODE | DO-204AL, DO-41, Axial | Through Hole | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | EGP10C | 2 | Rectifier Diodes | SILICON | 1 | Standard | 1A | 950mV | ISOLATED | 30A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 5μA @ 150V | 950mV @ 1A | -65°C~150°C | 150V | 1A | 5μA | 150V | 30A | 50 ns | 150V | 50 ns | 22pF @ 4V 1MHz | ||||||||||||||||||||||||||||||||||||
| VSSA210-M3/5AT | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 11 Weeks | Surface Mount | Tape & Reel (TR) | 2015 | TMBS® | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | FREE WHEELING DIODE, LOW POWER LOSS | DO-214AC, SMA | unknown | Surface Mount | 8541.10.00.80 | e3 | MATTE TIN | DUAL | C BEND | 260 | 40 | 2 | R-PDSO-C2 | 150°C | Not Qualified | SILICON | 1 | SINGLE | Schottky | 2A | EFFICIENCY | 1 | 60A | Fast Recovery =< 500ns, > 200mA (Io) | 150μA @ 100V | 700mV @ 2A | -40°C~150°C | 100V | 1.7A | 100V | 175pF @ 4V 1MHz | ||||||||||||||||||||||||||||||||||||||||||
| 1N6478-E3/96 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 19 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | SUPERECTIFIER® | yes | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | 2.67mm | 5.2mm | ROHS3 Compliant | Tin | 2 | FREE WHEELING DIODE, HIGH RELIABILITY | DO-213AB, MELF (Glass) | unknown | Surface Mount | 8541.10.00.80 | e3 | END | WRAP AROUND | 250 | 30 | 1N6478 | 2 | Rectifier Diodes | Not Qualified | SILICON | 1 | Standard | 1A | 1A | 1.1V | ISOLATED | 30A | Single | Standard Recovery >500ns, > 200mA (Io) | 10μA @ 50V | 1.1V @ 1A | -65°C~175°C | 50V | 1A | 10μA | 50V | 30A | 50V | 8pF @ 4V 1MHz | ||||||||||||||||||||||||||||||||
| BYM12-200-E3/97 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | SUPERECTIFIER® | yes | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | 5.2mm | ROHS3 Compliant | Lead Free | Tin | No | 2 | FREE WHEELING DIODE | DO-213AB, MELF (Glass) | 2.67mm | 2.67mm | Surface Mount | 1A | 8541.10.00.80 | e3 | END | WRAP AROUND | 250 | 40 | BYM12-200 | 2 | Rectifier Diodes | 200V | SILICON | 1 | Standard | 1A | 1V | ISOLATED | 30A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 5μA @ 200V | 1V @ 1A | -65°C~175°C | 200V | 1A | 5μA | 200V | 30A | 30A | 50 ns | 200V | 50 ns | 20pF @ 4V 1MHz | |||||||||||||||||||||||||||
| BYS11-90-M3/TR | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 11 Weeks | Surface Mount | Tape & Reel (TR) | 2014 | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | FREE WHEELING DIODE, LOW POWER LOSS | DO-214AC, SMA | unknown | Surface Mount | 8541.10.00.80 | DUAL | C BEND | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-C2 | 150°C | Rectifier Diodes | Not Qualified | SILICON | 1 | SINGLE | Schottky | EFFICIENCY | 1 | 40A | Fast Recovery =< 500ns, > 200mA (Io) | 100μA @ 90V | 750mV @ 1A | -55°C~150°C | 90V | 1.5A | 90V | ||||||||||||||||||||||||||||||||||||||||||||||
| RGL41D-E3/96 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Surface Mount | Tape & Reel (TR) | 2016 | SUPERECTIFIER® | yes | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | ROHS3 Compliant | Lead Free | No | 2 | FREE WHEELING DIODE | DO-213AB, MELF (Glass) | Unknown | Surface Mount | 8541.10.00.80 | e3 | Matte Tin (Sn) | END | WRAP AROUND | 250 | 40 | RGL41D | 2 | Rectifier Diodes | SILICON | 1 | Standard | 1A | 1A | 1.3V | ISOLATED | 30A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 5μA @ 200V | 1.3V @ 1A | -65°C~175°C | 200V | 1A | 5μA | 200V | 30A | 30A | 150 ns | 200V | 150 ns | 15pF @ 4V 1MHz | ||||||||||||||||||||||||||||||
| BYM10-600-E3/96 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 19 Weeks | Surface Mount | Tape & Reel (TR) | 2006 | SUPERECTIFIER® | yes | Active | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 175°C | -65°C | 5.2mm | ROHS3 Compliant | Lead Free | Tin | No | 2 | FREE WHEELING DIODE | DO-213AB, MELF (Glass) | Unknown | 2.67mm | 2.67mm | Surface Mount | 8541.10.00.80 | e3 | END | WRAP AROUND | 250 | 40 | BYM10-600 | 2 | Rectifier Diodes | SILICON | 1 | Standard | 1A | 1A | 1.1V | ISOLATED | 30A | Single | Standard Recovery >500ns, > 200mA (Io) | 10μA @ 600V | 1.1V @ 1A | -65°C~175°C | 600V | 1A | 10μA | 600V | 30A | 30A | 2 μs | 600V | 8pF @ 4V 1MHz |