Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Diameter | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Mounting Type | Technology | Manufacturer Package Identifier | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | JESD-30 Code | Operating Temperature (Max) | Subcategory | Qualification Status | Reference Standard | Diode Element Material | Number of Elements | Configuration | Diode Type | Output Current-Max | Application | Number of Phases | JEDEC-95 Code | Non-rep Pk Forward Current-Max | Forward Current | Forward Voltage | Case Connection | Breakdown Voltage-Min | Max Surge Current | Element Configuration | Power Dissipation | Max Reverse Leakage Current | Supplier Device Package | Speed | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Operating Temperature - Junction | Max Reverse Voltage (DC) | Average Rectified Current | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Max Forward Surge Current (Ifsm) | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Reverse Current-Max | Natural Thermal Resistance | Reverse Recovery Time | Reverse Voltage | Reverse Voltage (DC) | Recovery Time | Capacitance @ Vr, F | Max Junction Temperature (Tj) |
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VS-60EPU02PBF | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 11 Weeks | Radial, Through Hole | Tube | 2011 | FRED Pt® | Obsolete | 1 (Unlimited) | 2 | EAR99 | 175°C | -55°C | 15.9mm | ROHS3 Compliant | No | 2 | TO-247-2 | 20.7mm | 5.3mm | Through Hole | 8541.10.00.80 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 2 | Rectifier Diodes | SILICON | 1 | Standard | ULTRA FAST SOFT RECOVERY | 1 | 60A | 1.08V | CATHODE | 800A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 50μA @ 200V | 1.08V @ 60A | -55°C~175°C | 200V | 60A | 50μA | 200V | 800A | 800A | 0.2 °C/W | 35 ns | 200V | 35 ns | |||||||||||||||||||||||||||||||||||||
VS-HFA25PB60PBF | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Radial, Through Hole | Tube | 2004 | HEXFRED® | Obsolete | 1 (Unlimited) | 2 | EAR99 | 150°C | -55°C | 15.9mm | ROHS3 Compliant | No | 2 | TO-247-2 | Unknown | 20.7mm | 5.3mm | Through Hole | 8541.10.00.80 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 2 | Rectifier Diodes | SILICON | 1 | Standard | EFFICIENCY | 1 | 25A | 2V | CATHODE | 225A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 20μA @ 600V | 1.7V @ 25A | -55°C~150°C | 600V | 25A | 20μA | 600V | 225A | 225A | 0.25 °C/W | 75 ns | 600V | 75 ns | ||||||||||||||||||||||||||||||||||||
VS-HFA08PB120PBF | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Radial, Through Hole | Tube | 2011 | HEXFRED® | Obsolete | 1 (Unlimited) | 2 | EAR99 | 150°C | -55°C | 15.9mm | ROHS3 Compliant | No | 2 | TO-247-2 | 20.7mm | 5.3mm | Through Hole | 8541.10.00.80 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 2 | Rectifier Diodes | SILICON | 1 | Standard | 8A | EFFICIENCY | 1 | 8A | 4.3V | CATHODE | 130A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 10μA @ 1200V | 3.3V @ 8A | -55°C~150°C | 1.2kV | 8A | 10μA | 1.2kV | 32A | 130A | 1200V | 0.25 °C/W | 95 ns | 1.2kV | 160 ns | |||||||||||||||||||||||||||||||||||
VS-HFA30PB120PBF | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | Radial, Through Hole | Bulk | 2017 | HEXFRED® | Obsolete | 1 (Unlimited) | 2 | EAR99 | 150°C | -55°C | 15.87mm | ROHS3 Compliant | No | 2 | TO-247-2 | Unknown | 20.7mm | 5.31mm | Through Hole | 8541.10.00.80 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 2 | Rectifier Diodes | SILICON | 1 | Standard | EFFICIENCY | 1 | 30A | 5.7V | CATHODE | 120A | Single | 350W | Fast Recovery =< 500ns, > 200mA (Io) | 40μA @ 1200V | 4.1V @ 30A | -55°C~150°C | 1.2kV | 30A | 40μA | 1.2kV | 120A | 120A | 1200V | 0.5 °C/W | 170 ns | 1.2kV | 170 ns | |||||||||||||||||||||||||||||||||||
VS-HFA16PB120PBF | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Through Hole | Tube | 2004 | HEXFRED® | Obsolete | 1 (Unlimited) | 2 | EAR99 | 150°C | -55°C | 15.875mm | ROHS3 Compliant | No | 2 | TO-247-2 | Unknown | 20.701mm | 5.3086mm | Through Hole | 8541.10.00.80 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 2 | Rectifier Diodes | SILICON | 1 | Standard | EFFICIENCY | 1 | 16A | 980mV | CATHODE | 190A | Single | 151W | Fast Recovery =< 500ns, > 200mA (Io) | 20μA @ 1200V | 3V @ 16A | -55°C~150°C | 1.2kV | 16A | 20μA | 1.2kV | 190A | 190A | 1200V | 0.5 °C/W | 135 ns | 1.2kV | 135 ns | ||||||||||||||||||||||||||||||||||
SB520A-E3/54 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tape & Reel (TR) | 2016 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -65°C | 5.3mm | 9.5mm | ROHS3 Compliant | No | 2 | FREE WHEELING DIODE | DO-201AD, Axial | Through Hole | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | SB520 | 2 | Rectifier Diodes | SILICON | 1 | Schottky | 5A | GENERAL PURPOSE | 1 | 5A | 500mV | ISOLATED | 150A | Single | 500μA | Fast Recovery =< 500ns, > 200mA (Io) | 500μA @ 20V | 500mV @ 5A | -65°C~150°C | 20V | 5A | 500μA | 20V | 150A | ||||||||||||||||||||||||||||||||||||||
USB260-M3/52T | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 22 Weeks | Surface Mount | Tape & Reel (TR) | 2016 | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -55°C | ROHS3 Compliant | FREE WHEELING DIODE, LOW POWER LOSS | DO-214AA, SMB | unknown | 2.44mm | Surface Mount | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | NOT SPECIFIED | NOT SPECIFIED | R-PDSO-C2 | SILICON | 1 | SINGLE | Standard | 2A | EFFICIENCY | 1 | 2A | Fast Recovery =< 500ns, > 200mA (Io) | 5μA @ 600V | 1.6V @ 2A | -55°C~150°C | 600V | 2A | 5μA | 600V | 90A | 30 ns | 600V | 45pF @ 4V 1MHz | 150°C | ||||||||||||||||||||||||||||||||||||||||
S5JHE3_A/H | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 11 Weeks | Surface Mount | Tape & Reel (TR) | 2016 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -55°C | ROHS3 Compliant | Lead Free | No | 2 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | DO-214AB, SMC | Surface Mount | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 30 | S5J | Rectifier Diodes | AEC-Q101 | SILICON | 1 | Standard | 5A | GENERAL PURPOSE | 1 | 1.15V | Single | Standard Recovery >500ns, > 200mA (Io) | 10μA @ 600V | 1.15V @ 5A | -55°C~150°C | 600V | 5A | 600V | 100A | 10μA | 2.5 μs | 40pF @ 4V 1MHz | ||||||||||||||||||||||||||||||||||||||
SB560-E3/73 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tape & Box (TB) | 2015 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -65°C | 10mm | ROHS3 Compliant | No | 2 | FREE WHEELING DIODE | DO-201AD, Axial | 5.8mm | 5.8mm | Through Hole | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | SB560 | 2 | Rectifier Diodes | SILICON | 1 | Schottky | 5A | 1 | 5A | 650mV | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 500μA @ 60V | 650mV @ 5A | -65°C~150°C | 60V | 5A | 500μA | 60V | 220A | 220A | 75 ns | ||||||||||||||||||||||||||||||||||||||
LS4448GS18 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 6 Weeks | Surface Mount | Tape & Reel (TR) | 2016 | Automotive, AEC-Q101 | Active | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 100A | No | 2 | SOD-80 Variant | Surface Mount | 6.560-5006.01-496 12071 | LS4448 | Standard | 300mA | 1V | 2A | Single | 50μA | SOD-80 QuadroMELF | Small Signal =< 200mA (Io), Any Speed | 25nA @ 20V | 1V @ 100mA | 175°C Max | 75V | 150mA | 100V | 2A | 75V | 150mA | 8 ns | 8 ns | 4pF @ 0V 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||
NS8GT-E3/45 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Through Hole | Tube | 2011 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -55°C | ROHS3 Compliant | No | 2 | FREE WHEELING DIODE | TO-220-2 | Through Hole | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Rectifier Diodes | SILICON | 1 | Standard | 8A | GENERAL PURPOSE | 1 | 8A | 1.1V | CATHODE | 125A | Single | Standard Recovery >500ns, > 200mA (Io) | 10μA @ 400V | 1.1V @ 8A | -55°C~150°C | 400V | 8A | 10μA | 400V | 125A | 400V | ||||||||||||||||||||||||||||||||||||||||||
VS-SD400N16PC | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | Chassis, Stud | Bulk | 2016 | Active | 1 (Unlimited) | 1 | EAR99 | 190°C | -40°C | 32mm | ROHS3 Compliant | No | 2 | DO-205AB, DO-9, Stud | 260.5mm | 32mm | Stud Mount | 8541.10.00.80 | UPPER | HIGH CURRENT CABLE | O-CUPM-H1 | SILICON | 1 | Standard | GENERAL PURPOSE | 1 | 480A | CATHODE | 8.64kA | Single | Standard Recovery >500ns, > 200mA (Io) | 15mA @ 1600V | -40°C~190°C | 1.6kV | 400A | 15mA | 1.6kV | 8.64kA | 8.25kA | 1600V | 0.04 °C/W | 1.6kV | |||||||||||||||||||||||||||||||||||||||||||
BYW29-200-E3/45 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2016 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -65°C | 10.54mm | ROHS3 Compliant | Tin | No | 2 | FREE WHEELING DIODE | TO-220-2 | 15.32mm | 4.7mm | Through Hole | SCHOTTKY | 8541.10.00.80 | e3 | BYW29-200 | 3 | Rectifier Diodes | SILICON | 1 | Standard | 8A | EFFICIENCY | 1 | 8A | 1.3V | CATHODE | 100A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 10μA @ 200V | 1.3V @ 20A | -65°C~150°C | 200V | 8A | 10μA | 200V | 100A | 25 ns | 200V | 25 ns | 45pF @ 4V 1MHz | |||||||||||||||||||||||||||||||||||
MBRB1060-E3/45 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 22 Weeks | Surface Mount | Tube | 2011 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -65°C | ROHS3 Compliant | Lead Free | No | 3 | FREE WHEELING DIODE, LOW POWER LOSS | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | MBRB1060 | 3 | R-PSSO-G2 | Rectifier Diodes | SILICON | 1 | Schottky | EFFICIENCY | 1 | 10A | 950mV | 150A | Common Cathode | 100μA | Fast Recovery =< 500ns, > 200mA (Io) | 100μA @ 60V | 800mV @ 10A | -65°C~150°C | 60V | 10A | 100μA | 60V | 150A | |||||||||||||||||||||||||||||||||||||||
VF20100S-E3/4W | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Through Hole | Tube | 2011 | TMBS® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 150°C | -40°C | ROHS3 Compliant | No | FREE WHEELING DIODE , LOW POWER LOSS | TO-220-3 Full Pack, Isolated Tab | Through Hole | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | VF20100S | 3 | R-PSFM-T3 | SILICON | 1 | Schottky | EFFICIENCY | 1 | TO-220AB | 20A | 105V | 250A | Common Anode | 500μA | Fast Recovery =< 500ns, > 200mA (Io) | 500μA @ 100V | 900mV @ 20A | -40°C~150°C | 100V | 20A | 500μA | 100V | 250A | |||||||||||||||||||||||||||||||||||||||||
VS-150KS10 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Chassis, Stud | Bulk | 2008 | Active | 1 (Unlimited) | 1 | EAR99 | 200°C | -40°C | ROHS3 Compliant | 42 | FREE WHEELING DIODE | B-42 | Unknown | Chassis, Stud Mount | 8541.10.00.80 | UPPER | SOLDER LUG | NOT SPECIFIED | NOT SPECIFIED | O-MUPM-D1 | SILICON | 1 | Standard | GENERAL PURPOSE | 1 | 150A | 1.33V | CATHODE | 3.74kA | Single | Standard Recovery >500ns, > 200mA (Io) | 35mA @ 100V | 1.33V @ 471A | -40°C~200°C | 100V | 150A | 35mA | 100V | 0.1 °C/W | 100V | |||||||||||||||||||||||||||||||||||||||||||
UGB8DT-E3/45 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 20 Weeks | Surface Mount | Tube | 2013 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -55°C | ROHS3 Compliant | No | 3 | FREE WHEELING DIODE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 245 | 30 | UGB8D | 3 | R-PSSO-G2 | Rectifier Diodes | SILICON | 1 | Standard | 8A | EFFICIENCY | 1 | 8A | 1.2V | 150A | Common Cathode | Fast Recovery =< 500ns, > 200mA (Io) | 10μA @ 200V | 1V @ 8A | -55°C~150°C | 200V | 8A | 10μA | 200V | 150A | 30 ns | 200V | 30 ns | |||||||||||||||||||||||||||||||||||
BYV29-400-E3/45 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 2011 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -40°C | ROHS3 Compliant | Tin | 2 | FREE WHEELING DIODE | TO-220-2 | unknown | Through Hole | 8541.10.00.80 | e3 | NOT SPECIFIED | NOT SPECIFIED | BYV29-400 | 3 | Rectifier Diodes | Not Qualified | SILICON | 1 | Standard | 8A | EFFICIENCY | 1 | 8A | 1.4V | CATHODE | 110A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 10μA @ 400V | 1.25V @ 8A | -40°C~150°C | 400V | 8A | 10μA | 400V | 110A | 50 ns | 400V | 50 ns | ||||||||||||||||||||||||||||||||||||
SB5H90-E3/73 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tape & Box (TB) | 2014 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -55°C | ROHS3 Compliant | No | 2 | FREE WHEELING DIODE, LOW POWER LOSS, LOW LEAKAGE CURRENT | DO-201AD, Axial | Through Hole | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | 2 | Rectifier Diodes | SILICON | 1 | Schottky | 5A | EFFICIENCY | 1 | 5A | 800mV | ISOLATED | 200A | Single | 200μA | Fast Recovery =< 500ns, > 200mA (Io) | 200μA @ 90V | 800mV @ 5A | 175°C Max | 90V | 5A | 200μA | 90V | 200A | |||||||||||||||||||||||||||||||||||||||||
SGL41-30-E3/96 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 125°C | -55°C | ROHS3 Compliant | Lead Free | No | 2 | LOW POWER LOSS, FREE WHEELING DIODE | DO-213AB, MELF | Unknown | Surface Mount | 8541.10.00.80 | e3 | Matte Tin (Sn) | END | WRAP AROUND | 250 | 40 | SGL41-30 | 2 | Rectifier Diodes | SILICON | 1 | Schottky | 1A | 1A | 500mV | ISOLATED | 30A | Single | 500μA | Fast Recovery =< 500ns, > 200mA (Io) | 500μA @ 30V | 500mV @ 1A | -55°C~125°C | 30V | 1A | 500μA | 30V | 30A | 30A | 110pF @ 4V 1MHz | |||||||||||||||||||||||||||||||||||
SS34HE3_A/I | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 20 Weeks | Surface Mount | Tape & Reel (TR) | 2016 | Automotive, AEC-Q101 | yes | Discontinued | 1 (Unlimited) | 2 | EAR99 | 125°C | -55°C | ROHS3 Compliant | No | 2 | FREE WHEELING DIODE, LOW POWER LOSS | DO-214AB, SMC | Surface Mount | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 30 | SS34 | Rectifier Diodes | SILICON | 1 | Schottky | 3A | EFFICIENCY | 1 | 3A | 500mV | Single | Fast Recovery =< 500ns, > 200mA (Io) | 500μA @ 40V | 500mV @ 3A | -55°C~125°C | 40V | 3A | 20mA | 40V | 100A | 100A | 40V | ||||||||||||||||||||||||||||||||||||||
SS8P2L-M3/86A | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2005 | eSMP® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 150°C | -55°C | 4.35mm | ROHS3 Compliant | No | 3 | FREEWHEELING DIODE, HIGH RELIABILITY | TO-277, 3-PowerDFN | Unknown | 1.2mm | 6.15mm | Surface Mount | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | SS8P2L | 3 | Rectifier Diodes | SILICON | 1 | Schottky | 8A | EFFICIENCY | 1 | TO-277A | 8A | 570mV | CATHODE | 150A | Common Anode | 200μA | Fast Recovery =< 500ns, > 200mA (Io) | 200μA @ 30V | 570mV @ 8A | -55°C~150°C | 20V | 8A | 200μA | 20V | 150A | 150A | 330pF @ 4V 1MHz | |||||||||||||||||||||||||||||||
VS-30WQ06FNTR-M3 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2016 | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -40°C | ROHS3 Compliant | 3 | FREE WHEELING DIODE, HIGH RELIABILITY | TO-252-3, DPak (2 Leads + Tab), SC-63 | unknown | Surface Mount | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 260 | 40 | 3 | R-PSSO-G2 | Rectifier Diodes | Not Qualified | SILICON | 1 | Schottky | HIGH POWER | 1 | 3.5A | CATHODE | Common Anode | Fast Recovery =< 500ns, > 200mA (Io) | 2mA @ 60V | 610mV @ 3A | -40°C~150°C | 60V | 3.5A | 2mA | 60V | 490A | 145pF @ 5V 1MHz | |||||||||||||||||||||||||||||||||||||||||
VS-4ESH02HM3/86A | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2017 | FRED Pt® | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE | TO-277, 3-PowerDFN | unknown | Surface Mount | 8541.10.00.80 | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | R-PDSO-F3 | 175°C | AEC-Q101 | SILICON | 1 | SINGLE | Standard | 4A | HYPERFAST SOFT RECOVERY | 1 | TO-277A | 130A | CATHODE | Fast Recovery =< 500ns, > 200mA (Io) | 2μA @ 200V | 930mV @ 4A | -65°C~175°C | 200V | 4A | 200V | 2μA | 20 ns | ||||||||||||||||||||||||||||||||||||||||||||
SS36HE3_A/H | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 20 Weeks | Surface Mount | Tape & Reel (TR) | 2016 | Automotive, AEC-Q101 | yes | Discontinued | 1 (Unlimited) | 2 | EAR99 | 150°C | -55°C | ROHS3 Compliant | Lead Free | No | 2 | FREE WHEELING DIODE, LOW POWER LOSS | DO-214AB, SMC | Surface Mount | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 30 | SS36 | Rectifier Diodes | SILICON | 1 | Schottky | 3A | EFFICIENCY | 1 | 3A | 750mV | Single | Fast Recovery =< 500ns, > 200mA (Io) | 500μA @ 60V | 750mV @ 3A | -55°C~150°C | 60V | 3A | 10mA | 60V | 100A | 100A | 60V | |||||||||||||||||||||||||||||||||||||
RGP25M-E3/54 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 22 Weeks | Through Hole | Tape & Reel (TR) | 2014 | SUPERECTIFIER® | yes | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | 5.3mm | 9.5mm | ROHS3 Compliant | No | 2 | LOW LEAKAGE CURRENT | DO-201AD, Axial | Through Hole | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | RGP25M | 2 | Rectifier Diodes | SILICON | 1 | Standard | EFFICIENCY | 1 | 2.5A | ISOLATED | 100A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 5μA @ 1000V | 1.3V @ 2.5A | -65°C~175°C | 1kV | 2.5A | 5μA | 1kV | 100A | 1000V | 500 ns | 1kV | 500 ns | 60pF @ 4V 1MHz | |||||||||||||||||||||||||||||||||||
VS-50WQ10FNTR-M3 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2016 | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -40°C | ROHS3 Compliant | 3 | FREE WHEELING DIODE, HIGH RELIABLITY | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | unknown | Surface Mount | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 260 | 40 | 3 | R-PSSO-G2 | Rectifier Diodes | Not Qualified | SILICON | 1 | Schottky | GENERAL PURPOSE | 1 | 5.5A | 770mV | CATHODE | Common Anode | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 100V | 770mV @ 5A | -40°C~150°C | 100V | 5.5A | 1mA | 100V | 330A | 330A | 183pF @ 5V 1MHz | ||||||||||||||||||||||||||||||||||||||
VS-EPH3006-F3 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 11 Weeks | Through Hole | Tube | 2009 | FRED Pt® | Obsolete | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | 15.87mm | ROHS3 Compliant | No | 2 | FREEWHEELING DIODE | TO-247-2 | Unknown | 20.7mm | 5.31mm | Through Hole | 8541.10.00.80 | 3 | Rectifier Diodes | SILICON | 1 | Standard | HYPERFAST SOFT RECOVERY | 1 | 30A | 2.65V | CATHODE | 180A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 30μA @ 600V | 2.65V @ 30A | -65°C~175°C | 600V | 30A | 30μA | 600V | 180A | 180A | 35 ns | 600V | 26 ns | ||||||||||||||||||||||||||||||||||||||
VS-65PQ015PBF | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 11 Weeks | Through Hole | Tube | 2011 | Obsolete | 1 (Unlimited) | 3 | EAR99 | 125°C | -55°C | ROHS3 Compliant | No | 3 | TO-247-3 | Through Hole | e3 | MATTE TIN OVER NICKEL | SINGLE | SILICON | 1 | Schottky | GENERAL PURPOSE | 1 | TO-247AC | 65A | CATHODE | 1.5kA | Common Anode | 18mA | Fast Recovery =< 500ns, > 200mA (Io) | 18mA @ 15V | 500mV @ 65A | -55°C~125°C | 15V | 65A | 18mA | 15V | 1.5kA | 0.3 °C/W | ||||||||||||||||||||||||||||||||||||||||||||||
VS-C4PU6006LHN3 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Tube | Automotive, AEC-Q101, FRED Pt® | Active | Not Applicable | ROHS3 Compliant | TO-247-3 | unknown | Through Hole | NOT SPECIFIED | NOT SPECIFIED | Standard | Fast Recovery =< 500ns, > 200mA (Io) | 50μA @ 600V | 1.6V @ 30A | -55°C~175°C | 600V | 30A | 65ns |
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