Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Mounting Type | Weight | Operating Temperature | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Surface Mount | JESD-30 Code | Subcategory | Qualification Status | Max Power Dissipation | Power - Max | Reference Standard | Diode Element Material | Number of Elements | Configuration | Diode Type | Output Current-Max | Application | Number of Phases | JEDEC-95 Code | Non-rep Pk Forward Current-Max | Polarity | Forward Current | Forward Voltage | Case Connection | Polarity/Channel Type | Max Surge Current | Element Configuration | Power Dissipation | Breakdown Voltage | Max Reverse Leakage Current | Input | Speed | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Operating Temperature - Junction | Max Reverse Voltage (DC) | Average Rectified Current | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Max Forward Surge Current (Ifsm) | Voltage - DC Reverse (Vr) (Max) | Natural Thermal Resistance | Reverse Recovery Time | Reverse Voltage | Reverse Voltage (DC) | Recovery Time | Max Collector Current | Collector Emitter Breakdown Voltage | Collector Emitter Voltage (VCEO) | Capacitance @ Vr, F | Transistor Application | Transistor Element Material | Rise Time | Input Capacitance | Current - Collector Cutoff (Max) | Collector Emitter Saturation Voltage | Turn On Time | Vce(on) (Max) @ Vge, Ic | Turn Off Time-Nom (toff) | IGBT Type | NTC Thermistor | Gate-Emitter Voltage-Max | Input Capacitance (Cies) @ Vce | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) |
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VS-20ETS08FPPBF | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 1999 | Obsolete | 1 (Unlimited) | 2 | EAR99 | 150°C | -40°C | 10.6mm | ROHS3 Compliant | Lead Free | No | 2 | UL APPROVED | TO-220-2 Full Pack | 8.9mm | 4.8mm | Through Hole | 8541.10.00.80 | e3 | MATTE TIN OVER NICKEL | 20ETS08 | SILICON | 1 | Standard | HIGH VOLTAGE | 1 | 20A | 1.1V | ISOLATED | 300A | Single | Standard Recovery >500ns, > 200mA (Io) | 100μA @ 800V | 1.1V @ 20A | -40°C~150°C | 800V | 20A | 1mA | 800V | 300A | 300A | 0.5 °C/W | 800V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
VS-10ETF04FPPBF | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
8 Weeks | Through Hole | Tube | 2008 | Obsolete | 1 (Unlimited) | EAR99 | 150°C | -40°C | ROHS3 Compliant | No | 2 | TO-220-2 Full Pack | Through Hole | e3 | MATTE TIN OVER NICKEL | 10ETF04 | Standard | 10A | 160A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 1.2V @ 10A | -40°C~150°C | 10A | 100μA | 400V | 160A | 0.5 °C/W | 200 ns | 400V | 145 ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
VS-10ETF06FPPBF | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2008 | Obsolete | 1 (Unlimited) | EAR99 | 150°C | -40°C | ROHS3 Compliant | No | 2 | TO-220-2 Full Pack | Through Hole | e3 | MATTE TIN OVER NICKEL | 10ETF06 | Standard | 10A | 1.2V | 150A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 1.2V @ 10A | -40°C~150°C | 10A | 100μA | 600V | 150A | 0.5 °C/W | 200 ns | 600V | 145 ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
VS-MBRS340TRPBF | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2014 | yes | Obsolete | 1 (Unlimited) | 2 | EAR99 | 150°C | -55°C | 7.11mm | ROHS3 Compliant | No | 2 | FREE WHEELING DIODE, HIGH RELIABILITY | DO-214AB, SMC | Unknown | 6.22mm | Surface Mount | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | MBRS340 | 2 | Rectifier Diodes | SILICON | 1 | Schottky | 4A | HIGH POWER | 1 | 4A | 525mV | 1.58kA | Single | 40V | 2mA | Fast Recovery =< 500ns, > 200mA (Io) | 2mA @ 40V | 525mV @ 3A | -55°C~150°C | 40V | 3A | 2mA | 40V | 1.58kA | 1.58kA | |||||||||||||||||||||||||||||||||||||||||||||||||||||
VS-MBRS130LTRPBF | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2009 | yes | Obsolete | 1 (Unlimited) | 2 | EAR99 | 125°C | -55°C | 4.57mm | ROHS3 Compliant | No | 2 | FREE WHEELING DIODE, HIGH RELIABILITY | DO-214AA, SMB | Unknown | 2.56mm | 3.81mm | Surface Mount | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | MBRS130 | 2 | Rectifier Diodes | SILICON | 1 | Schottky | 1A | 1A | 420mV | 230A | Single | 1mA | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 30V | 420mV @ 1A | -55°C~125°C | 30V | 1A | 1mA | 30V | 230A | 230A | 25 °C/W | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
VS-10ETF10FPPBF | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2013 | Obsolete | 1 (Unlimited) | 2 | EAR99 | 150°C | -40°C | ROHS3 Compliant | FREE WHEELING DIODE, UL APPROVED | TO-220-2 Full Pack | unknown | Through Hole | 8541.10.00.80 | e3 | MATTE TIN OVER NICKEL | NOT APPLICABLE | NOT APPLICABLE | 10ETF10 | R-PSFM-T2 | SILICON | 1 | Standard | FAST SOFT RECOVERY | 1 | TO-220AC | 140A | ISOLATED | 160A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 1.33V @ 10A | -40°C~150°C | 10A | 100μA | 1000V | 0.5 °C/W | 310 ns | 1kV | 310 ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MBRB1660HE3/81 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2011 | yes | Discontinued | 1 (Unlimited) | 2 | EAR99 | 150°C | -65°C | ROHS3 Compliant | No | 3 | FREE WHEELING DIODE, LOW POWER LOSS | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 245 | 30 | MBRB1660 | 3 | R-PSSO-G2 | Rectifier Diodes | AEC-Q101 | SILICON | 1 | Schottky | EFFICIENCY | 1 | 16A | 750mV | 150A | Common Cathode | 1mA | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 60V | 750mV @ 16A | -65°C~175°C | 60V | 16A | 1mA | 60V | 150A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
MBRB10H60-E3/81 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2011 | yes | Obsolete | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | 10.45mm | ROHS3 Compliant | No | 3 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, LOW POWER LOSS | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.83mm | 9.14mm | Surface Mount | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | MBRB10H60 | 3 | R-PSSO-G2 | Rectifier Diodes | SILICON | 1 | Schottky | EFFICIENCY | 1 | 10A | 850mV | Common Cathode | Fast Recovery =< 500ns, > 200mA (Io) | 100μA @ 60V | 710mV @ 10A | -65°C~175°C | 60V | 10A | 100μA | 60V | 150A | 150A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MBRB750-E3/81 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2011 | yes | Obsolete | 1 (Unlimited) | 2 | EAR99 | 150°C | -65°C | 10.45mm | ROHS3 Compliant | No | 3 | FREE WHEELING DIODE, LOW POWER LOSS | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.83mm | 9.14mm | Surface Mount | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | MBRB750 | 3 | R-PSSO-G2 | Rectifier Diodes | SILICON | 1 | Schottky | EFFICIENCY | 1 | 7.5A | 750mV | 150A | Common Cathode | 500μA | Fast Recovery =< 500ns, > 200mA (Io) | 500μA @ 50V | 750mV @ 7.5A | -65°C~150°C | 50V | 7.5A | 500μA | 50V | 150A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
SBLB10L30-E3/81 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2011 | yes | Obsolete | 1 (Unlimited) | 2 | EAR99 | 150°C | -65°C | ROHS3 Compliant | No | 3 | FREE WHEELING DIODE, LOW POWER LOSS | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | SBLB10L30 | 3 | R-PSSO-G2 | Rectifier Diodes | SILICON | 1 | Schottky | EFFICIENCY | 1 | 10A | 200A | Common Cathode | 1mA | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 30V | 520mV @ 10A | -65°C~150°C | 30V | 10A | 1mA | 30V | 200A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SS8P3LHM3/87A | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 2015 | eSMP® | yes | Discontinued | 1 (Unlimited) | 3 | EAR99 | 150°C | -55°C | ROHS3 Compliant | No | 3 | FREEWHEELING DIODE, HIGH RELIABILITY | TO-277, 3-PowerDFN | Surface Mount | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | SS8P3L | 3 | YES | Rectifier Diodes | SILICON | 1 | Schottky | 8A | EFFICIENCY | 1 | TO-277A | 8A | CATHODE | 150A | Common Anode | 200μA | Fast Recovery =< 500ns, > 200mA (Io) | 200μA @ 30V | 570mV @ 8A | -55°C~150°C | 30V | 8A | 200μA | 30V | 150A | 150A | 330pF @ 4V 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
VS-15ETX06STRLPBF | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 11 Weeks | Surface Mount | Tape & Reel (TR) | 2017 | Automotive, AEC-Q101, FRED Pt® | yes | Discontinued | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | 10.67mm | ROHS3 Compliant | No | 3 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.83mm | 9.65mm | Surface Mount | 2.000002g | 8541.10.00.80 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 3 | R-PSSO-G2 | Rectifier Diodes | SILICON | 1 | Standard | HYPERFAST SOFT RECOVERY HIGH POWER | 1 | 15A | 2.3V | CATHODE | 170A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 50μA @ 600V | 3.2V @ 15A | -65°C~175°C | 600V | 15A | 100nA | 600V | 170A | 22 ns | 600V | 22 ns | |||||||||||||||||||||||||||||||||||||||||||||||||||
VS-30ETH06STRRPBF | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 11 Weeks | Surface Mount | Tape & Reel (TR) | 2017 | Automotive, AEC-Q101, FRED Pt® | yes | Discontinued | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | ROHS3 Compliant | Tin | 3 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | 8541.10.00.80 | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSSO-G2 | Rectifier Diodes | Not Qualified | SILICON | 1 | Standard | HYPERFAST SOFT RECOVERY HIGH POWER | 1 | 30A | CATHODE | Single | Fast Recovery =< 500ns, > 200mA (Io) | 50mA @ 600V | 2.6V @ 30A | -65°C~175°C | 600V | 30A | 50μA | 600V | 200A | 31 ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
VS-20TQ035STRLPBF | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 11 Weeks | Surface Mount | Tape & Reel (TR) | 2014 | Automotive, AEC-Q101 | yes | Discontinued | 1 (Unlimited) | 2 | EAR99 | 150°C | -55°C | ROHS3 Compliant | Tin | 3 | FREEWHEELING DIODE, HIGH RELIABILITY | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | e3 | GULL WING | 260 | 10 | 3 | R-PSSO-G2 | Rectifier Diodes | Not Qualified | SILICON | 1 | Schottky | HIGH POWER | 1 | 20A | CATHODE | 1.8kA | Single | 2.7mA | Fast Recovery =< 500ns, > 200mA (Io) | 2.7mA @ 35V | 570mV @ 20A | -55°C~150°C | 35V | 20A | 2.7mA | 35V | 1.8kA | 1400pF @ 5V 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
VS-8ETH03STRRPBF | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 11 Weeks | Surface Mount | Tape & Reel (TR) | 2017 | Automotive, AEC-Q101, FRED Pt® | yes | Discontinued | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | ROHS3 Compliant | Tin | 3 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | 8541.10.00.80 | e3 | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSSO-G2 | Rectifier Diodes | Not Qualified | SILICON | 1 | Standard | 8A | HFRHP | 1 | 8A | CATHODE | 100A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 20μA @ 300V | 1.25V @ 8A | -65°C~175°C | 300V | 8A | 20μA | 300V | 100A | 27 ns | 300V | 35 ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||
VS-8EWS08STRLPBF | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2011 | yes | Obsolete | 1 (Unlimited) | 2 | EAR99 | 150°C | -55°C | ROHS3 Compliant | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | 8541.10.00.80 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 10 | R-PSSO-G2 | Rectifier Diodes | SILICON | 1 | Standard | 8A | HIGH VOLTAGE | 1 | TO-252AA | 8A | 1.1V | CATHODE | 200A | Common Anode | Fast Recovery =< 500ns, > 200mA (Io) | 50μA @ 800V | 1.1V @ 8A | -55°C~150°C | 800V | 8A | 50μA | 800V | 200A | 200A | 25 ns | 800V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
VS-10ETF02PBF | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2015 | Discontinued | 1 (Unlimited) | 2 | EAR99 | 150°C | -40°C | ROHS3 Compliant | No | FREE WHEELING DIODE | TO-220-2 | Through Hole | 8541.10.00.80 | e3 | MATTE TIN OVER NICKEL | R-PSFM-T2 | SILICON | 1 | Standard | FAST SOFT RECOVERY | 1 | TO-220AC | 10A | CATHODE | 160A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 100μA @ 200V | 1.2V @ 10A | -40°C~150°C | 200V | 10A | 100μA | 200V | 160A | 200 ns | 200V | 145 ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
VS-GA100TS60SFPBF | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | 2012 | Obsolete | 1 (Unlimited) | EAR99 | ROHS3 Compliant | 3 | INT-A-Pak | Unknown | Chassis Mount | -40°C~150°C TJ | 780W | 780W | Half Bridge | NPN | Dual | Standard | 220A | 600V | 600V | 16.25nF | 1mA | 1.39V | 1.28V @ 15V, 100A | PT | No | 16.25nF @ 30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
VS-GA200SA60SP | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | 2000 | Obsolete | 1 (Unlimited) | 4 | EAR99 | ROHS3 Compliant | 4 | UL APPROVED | SOT-227-4, miniBLOC | Unknown | Chassis Mount | -55°C~150°C TJ | UPPER | UNSPECIFIED | 630W | 781W | 1 | Single | ISOLATED | N-CHANNEL | 630W | Standard | 342A | 600V | 600V | POWER CONTROL | SILICON | 60ns | 16.25nF | 1mA | 1.1V | 132 ns | 1.3V @ 15V, 100A | 2160 ns | No | 16.25nF @ 30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
VS-GA200TH60S | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
14 Weeks | Chassis Mount | 2015 | yes | Obsolete | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Double INT-A-PAK (3 + 4) | Chassis Mount | -40°C~150°C TJ | Nickel (Ni) | Insulated Gate BIP Transistors | 1.042kW | 1042W | 1 | Half Bridge | Standard | 260A | 600V | 1.9V | 13.1nF | 5μA | 1.9V @ 15V, 200A (Typ) | No | 20V | 13.1nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
VS-GA100NA60UP | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 2013 | Obsolete | 1 (Unlimited) | 4 | EAR99 | ROHS3 Compliant | UL RECOGNIZED | SOT-227-4, miniBLOC | Chassis Mount | -55°C~150°C TJ | UPPER | UNSPECIFIED | 4 | NO | R-PUFM-X4 | 250W | 1 | Single | ISOLATED | N-CHANNEL | Standard | POWER CONTROL | SILICON | 250μA | 137 ns | 2.1V @ 15V, 50A | 550 ns | No | 7.4nF @ 30V | 600V | 100A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
VS-GB100TS60NPBF | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | 2016 | Obsolete | 1 (Unlimited) | EAR99 | ROHS3 Compliant | 3 | INT-A-Pak | Unknown | Chassis Mount | -40°C~150°C TJ | 390W | 390W | Half Bridge | NPN | Dual | Standard | 108A | 600V | 600V | 100μA | 2.6V | 2.85V @ 15V, 100A | NPT | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
VS-GB200TH120N | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
14 Weeks | Chassis Mount | 2015 | yes | Obsolete | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Double INT-A-PAK (3 + 4) | Chassis Mount | 150°C TJ | Nickel (Ni) | Insulated Gate BIP Transistors | 1.136kW | 1136W | 1 | Half Bridge | Standard | 360A | 1.2kV | 2.35V | 14.9nF | 5mA | 2.35V @ 15V, 200A | No | 20V | 14.9nF @ 25V | 1200V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
VS-GB100TP120U | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
Chassis Mount | 2015 | yes | Obsolete | 1 (Unlimited) | EAR99 | ROHS3 Compliant | INT-A-Pak | Chassis Mount | NICKEL (197) | 735W | 735W | Half Bridge | Standard | 150A | 1.2kV | 3.9V | 4.3nF | 2mA | 3.9V @ 15V, 100A | No | 4.3nF @ 25V | 1200V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
VS-GB100TH120U | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Chassis Mount | 2015 | yes | Obsolete | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Double INT-A-PAK (3 + 4) | Chassis Mount | -40°C~150°C TJ | Nickel (Ni) | Insulated Gate BIP Transistors | 1.136kW | 1136W | 1 | Half Bridge | Standard | 200A | 1.2kV | 3.6V | 8.45nF | 5mA | 3.6V @ 15V, 100A | NPT | No | 20V | 8.45nF @ 20V | 1200V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
VS-EMG050J60N | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | Chassis Mount | 2012 | Obsolete | 1 (Unlimited) | 17 | EAR99 | ROHS3 Compliant | No | 17 | EMIPAK2 | Unknown | Chassis Mount | 150°C TJ | UPPER | PIN/PEG | 17 | 338W | 338W | 2 | Half Bridge | NPN | ISOLATED | Standard | 88A | 600V | 2.1V | POWER CONTROL | SILICON | 9.5nF | 100μA | 2.2V | 227 ns | 2.1V @ 15V, 50A | 302 ns | Yes | 9.5nF @ 30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
VS-GB100TH120N | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
14 Weeks | Chassis Mount | 2015 | Obsolete | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Double INT-A-PAK (3 + 4) | Chassis Mount | 150°C TJ | Insulated Gate BIP Transistors | 833W | 833W | 1 | Half Bridge | Standard | 200A | 1.2kV | 2.35V | 8.58nF | 5mA | 2.35V @ 15V, 100A | No | 20V | 8.58nF @ 25V | 1200V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
VS-GB50LP120N | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
12 Weeks | Chassis Mount | 2015 | yes | Obsolete | 1 (Unlimited) | EAR99 | ROHS3 Compliant | INT-A-PAK (3 + 4) | Chassis Mount | -40°C~150°C TJ | Nickel (Ni) | Insulated Gate BIP Transistors | 446W | 446W | 1 | Single | Standard | 100A | 1.2kV | 1.7V | 4.29nF | 1mA | 1.7V @ 15V, 50A (Typ) | No | 20V | 4.29nF @ 25V | 1200V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
VS-GB100TP120N | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
12 Weeks | Chassis Mount | 2015 | Obsolete | 1 (Unlimited) | EAR99 | ROHS3 Compliant | INT-A-Pak | Chassis Mount | 150°C TJ | 650W | 650W | Half Bridge | Standard | 200A | 1.2kV | 2.2V | 7.43nF | 5mA | 2.2V @ 15V, 100A | No | 7.43nF @ 25V | 1200V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
VS-GB300NH120N | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
14 Weeks | Chassis Mount | 2015 | Obsolete | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Double INT-A-PAK (3 + 4) | Chassis Mount | 150°C TJ | 1.645kW | 1645W | Single | Standard | 500A | 1.2kV | 2.45V | 21.2nF | 5mA | 2.45V @ 15V, 300A | No | 21.2nF @ 25V | 1200V |
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