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RF/IF & RFID
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ON Semiconductor(36350)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Lifecycle Status | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Voltage | Number of Elements | JEDEC-95 Code | Case Connection | Halogen Free | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Power Dissipation-Max | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Feedback Cap-Max (Crss) | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| FCP380N60 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | ACTIVE (Last Updated: 2 days ago) | Through Hole | Tube | 2010 | SuperFET® II | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.67mm | ROHS3 Compliant | No | 3 | TO-220-3 | No SVHC | 9.4mm | 4.83mm | Through Hole | 1.8g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | FET General Purpose Power | 1 | TO-220AB | Single | 31W | 14 ns | 2.5V | 106W Tc | 10.2A | SWITCHING | 45 ns | SILICON | N-Channel | 380m Ω @ 5A, 10V | 3.5V @ 250μA | 1665pF @ 25V | 40nC @ 10V | 7ns | 6 ns | 20V | 650V | 10.2A Tc | 600V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| FDP047N10 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 7 Weeks | ACTIVE (Last Updated: 2 days ago) | Through Hole | Tube | 2013 | PowerTrench® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.1mm | ROHS3 Compliant | Lead Free | No | 3 | ULTRA-LOW RESISTANCE | TO-220-3 | No SVHC | 15.38mm | 4.7mm | 4.7MOhm | Through Hole | 2.421g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | FET General Purpose Power | 1 | TO-220AB | Single | 375W | 174 ns | 3.5V | 375W Tc | 164A | SWITCHING | 344 ns | SILICON | N-Channel | 4.7m Ω @ 75A, 10V | 4.5V @ 250μA | 15265pF @ 25V | 210nC @ 10V | 386ns | 244 ns | 20V | 100V | 120A Tc | 656A | 10V | ±20V | |||||||||||||||||||||||||||||
| FQA13N80-F109 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | ACTIVE (Last Updated: 18 hours ago) | Through Hole | Tube | 2007 | QFET® | yes | Active | 1 (Unlimited) | 3 | 15.8mm | ROHS3 Compliant | Lead Free | 3 | TO-3P-3, SC-65-3 | No SVHC | 18.9mm | 5mm | Through Hole | 6.401g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | Not Qualified | 1 | Single | 300W | 60 ns | 5V | 300W Tc | 12.6A | SWITCHING | 0.75Ohm | 155 ns | SILICON | N-Channel | 750m Ω @ 6.3A, 10V | 5V @ 250μA | 3500pF @ 25V | 88nC @ 10V | 150ns | 110 ns | 30V | 800V | 12.6A Tc | 50.4A | 10V | ±30V | ||||||||||||||||||||||||||||||||
| FCP104N60 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | ACTIVE (Last Updated: 2 days ago) | Through Hole | Tube | 2014 | SuperFET® II | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.67mm | ROHS3 Compliant | 3 | TO-220-3 | 16.3mm | 4.7mm | Through Hole | 1.8g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | 1 | TO-220AB | Single | 26 ns | 357W Tc | 37A | SWITCHING | 600V | 72 ns | SILICON | N-Channel | 104m Ω @ 18.5A, 10V | 3.5V @ 250μA | 4165pF @ 380V | 82nC @ 10V | 18ns | 3.3 ns | 30V | 37A Tc | 600V | 809 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||
| FCP110N65F | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | ACTIVE (Last Updated: 2 days ago) | Through Hole | Tube | FRFET®, SuperFET® II | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.67mm | ROHS3 Compliant | 3 | TO-220-3 | 16.3mm | 4.7mm | Through Hole | 1.8g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | 1 | TO-220AB | Single | 31 ns | 357W Tc | 35A | SWITCHING | 89 ns | SILICON | N-Channel | 110m Ω @ 17.5A, 10V | 5V @ 3.5mA | 4895pF @ 100V | 145nC @ 10V | 21ns | 5.7 ns | 30V | 650V | 35A Tc | 809 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| NTHL110N65S3F | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | ACTIVE (Last Updated: 3 days ago) | yes | Active | Not Applicable | RoHS Compliant | TO-247-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | e3 | Tin (Sn) | 240W Tc | N-Channel | 110m Ω @ 15A, 10V | 5V @ 3mA | 2560pF @ 400V | 58nC @ 10V | 30A Tc | 650V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCA22N60N | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | ACTIVE (Last Updated: 2 days ago) | Through Hole | Tube | 2009 | SupreMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | 15.8mm | ROHS3 Compliant | Lead Free | Tin | No | 3 | TO-3P-3, SC-65-3 | No SVHC | 20.1mm | 5mm | 165mOhm | Through Hole | 6.401g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | FET General Purpose Power | 1 | DRAIN | Single | 205W | 16.9 ns | 3V | 205W Tc | 22A | SWITCHING | 49 ns | SILICON | N-Channel | 165m Ω @ 11A, 10V | 4V @ 250μA | 1950pF @ 100V | 45nC @ 10V | 16.7s | 4 ns | 30V | 650V | 3 V | 22A Tc | 600V | 66A | 672 mJ | 10V | ±30V | |||||||||||||||||||||||||||
| NTPF082N65S3F | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | ACTIVE (Last Updated: 3 days ago) | SuperFET® III | yes | Active | Not Applicable | RoHS Compliant | TO-220-3 Full Pack | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | 48W Tc | N-Channel | 82m Ω @ 20A, 10V | 5V @ 4mA | 3240pF @ 400V | 70nC @ 10V | 40A Tc | 650V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMC86324 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 5 Weeks | ACTIVE (Last Updated: 22 hours ago) | Surface Mount | Tape & Reel (TR) | 2008 | PowerTrench® | yes | Active | 1 (Unlimited) | 5 | EAR99 | 3.3mm | ROHS3 Compliant | No | 8 | 8-PowerTDFN | No SVHC | 1.05mm | 3.3mm | Surface Mount | 32.13mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e4 | Nickel/Palladium (Ni/Pd) | DUAL | S-PDSO-N5 | FET General Purpose Power | 1 | MO-240BA | DRAIN | Single | 41W | 8 ns | 3.1V | 2.3W Ta 41W Tc | 7A | SWITCHING | 0.023Ohm | 14 ns | SILICON | N-Channel | 23m Ω @ 7A, 10V | 4V @ 250μA | 965pF @ 50V | 18nC @ 10V | 4ns | 4 ns | 20V | 80V | 7A | 7A Ta 20A Tc | 30A | 72 mJ | 6V 10V | ±20V | ||||||||||||||||||||||||||
| FDMS86520L | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 5 Weeks | ACTIVE (Last Updated: 3 days ago) | Surface Mount | Tape & Reel (TR) | PowerTrench® | yes | Active | 1 (Unlimited) | 5 | EAR99 | 5mm | ROHS3 Compliant | Lead Free | No | 8 | 8-PowerTDFN | No SVHC | 1.1mm | 6mm | Surface Mount | 74mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | R-PDSO-F5 | 1 | FET General Purpose Power | 1 | MO-240AA | DRAIN | Single | 2.5W | 15 ns | 1.8V | 2.5W Ta 69W Tc | 13.5A | 150°C | SWITCHING | 32 ns | SILICON | N-Channel | 8.2m Ω @ 13.5A, 10V | 3V @ 250μA | 4615pF @ 30V | 63nC @ 10V | 5.6ns | 3.4 ns | 20V | 60V | 1.8 V | 22A | 13.5A Ta 22A Tc | 60A | 4.5V 10V | ±20V | ||||||||||||||||||||||||
| FQP7N20 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 5 Weeks | ACTIVE (Last Updated: 3 days ago) | Through Hole | Tube | QFET® | yes | Active | 1 (Unlimited) | ROHS3 Compliant | Lead Free | 6.6A | TO-220-3 | Through Hole | -55°C~150°C TJ | 200V | MOSFET (Metal Oxide) | Single | 63W | 63W Tc | 6.6A | 15 ns | N-Channel | 690m Ω @ 3.3A, 10V | 5V @ 250μA | 400pF @ 25V | 10nC @ 10V | 65ns | 35 ns | 30V | 200V | 6.6A Tc | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| FQB5N90TM | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 7 Weeks | ACTIVE (Last Updated: 1 day ago) | Surface Mount | Tape & Reel (TR) | QFET® | yes | Active | 1 (Unlimited) | 2 | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | Tin | 5.4A | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | not_compliant | 4.83mm | 9.65mm | 2.3Ohm | Surface Mount | 1.31247g | -55°C~150°C TJ | 900V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | DRAIN | Single | 3.13W | 28 ns | 3V | 3.13W Ta 158W Tc | 5.4A | SWITCHING | 65 ns | SILICON | N-Channel | 2.3 Ω @ 2.7A, 10V | 5V @ 250μA | 1550pF @ 25V | 40nC @ 10V | 65ns | 50 ns | 30V | 900V | 5.4A Tc | 660 mJ | 10V | ±30V | ||||||||||||||||||||||||
| FQPF7P20 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 4 Weeks | ACTIVE (Last Updated: 2 days ago) | Through Hole | Tube | 2013 | QFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.36mm | ROHS3 Compliant | Lead Free | -5.2A | No | 3 | TO-220-3 Full Pack | 16.07mm | 4.9mm | Through Hole | 2.27g | -55°C~150°C TJ | -200V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | Other Transistors | 1 | ISOLATED | Single | 45W | 15 ns | 45W Tc | 5.2A | SWITCHING | 0.69Ohm | 30 ns | SILICON | P-Channel | 690m Ω @ 2.6A, 10V | 5V @ 250μA | 770pF @ 25V | 25nC @ 10V | 110ns | 42 ns | 30V | -200V | 5.2A Tc | 200V | 20.8A | 560 mJ | 10V | ±30V | ||||||||||||||||||||||||||||
| FDMC86340 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | ACTIVE (Last Updated: 23 hours ago) | Surface Mount | Tape & Reel (TR) | 2017 | PowerTrench® | yes | Active | 1 (Unlimited) | 5 | EAR99 | 3.4mm | ROHS3 Compliant | No | 8 | 8-PowerWDFN | 750μm | 3.4mm | Surface Mount | 152.7mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | S-PDSO-N5 | FET General Purpose Power | 1 | MO-240BA | DRAIN | Single | 54W | 20 ns | 2.3W Ta 54W Tc | 48A | SWITCHING | 0.0065Ohm | 23 ns | SILICON | N-Channel | 6.5m Ω @ 14A, 10V | 4V @ 250μA | 3885pF @ 40V | 53nC @ 10V | 16ns | 10 ns | 20V | 80V | 14A Ta 48A Tc | 200A | 8V 10V | ±20V | ||||||||||||||||||||||||||||||
| FDP55N06 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 5 Weeks | ACTIVE (Last Updated: 3 days ago) | Through Hole | Tube | 2013 | UniFET™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | AVALANCHE RATED | TO-220-3 | No SVHC | 22mOhm | Through Hole | 1.8g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | Not Qualified | 1 | TO-220AB | Single | 114W | 30 ns | 2V | 114W Tc | 55A | SWITCHING | 70 ns | SILICON | N-Channel | 22m Ω @ 27.5A, 10V | 4V @ 250μA | 1510pF @ 25V | 37nC @ 10V | 130ns | 95 ns | 25V | 60V | 55A Tc | 220A | 480 mJ | 10V | ±25V | |||||||||||||||||||||||||||||
| FQPF4N90C | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 4 Weeks | ACTIVE (Last Updated: 3 days ago) | Through Hole | Tube | 2003 | QFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.16mm | ROHS3 Compliant | Lead Free | Tin | 4A | No | 3 | TO-220-3 Full Pack | No SVHC | 9.19mm | 4.7mm | Through Hole | 2.27g | -55°C~150°C TJ | 900V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | FET General Purpose Power | 1 | TO-220AB | ISOLATED | Single | 47W | 25 ns | 5V | 47W Tc | 4A | SWITCHING | 40 ns | SILICON | N-Channel | 4.2 Ω @ 2A, 10V | 5V @ 250μA | 960pF @ 25V | 22nC @ 10V | 50ns | 35 ns | 30V | 900V | 4A | 4A Tc | 570 mJ | 10V | ±30V | |||||||||||||||||||||||||||
| FDP8447L | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 9 Weeks | ACTIVE (Last Updated: 3 days ago) | Through Hole | Tube | 2006 | PowerTrench® | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | Tin | No | 3 | TO-220-3 | 8.7MOhm | Through Hole | 1.8g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | FET General Purpose Power | 1 | TO-220AB | Single | 2W | 9 ns | 2W Ta 60W Tc | 12A | SWITCHING | 28 ns | SILICON | N-Channel | 8.7m Ω @ 14A, 10V | 3V @ 250μA | 2500pF @ 20V | 49nC @ 10V | 7ns | 4 ns | 20V | 40V | 50A | 12A Ta 50A Tc | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| FDPF55N06 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 5 Weeks | ACTIVE (Last Updated: 4 days ago) | Through Hole | Tube | 2013 | UniFET™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.36mm | ROHS3 Compliant | No | 3 | AVALANCHE RATED | TO-220-3 Full Pack | 16.07mm | 4.9mm | Through Hole | 2.27g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | FET General Purpose Power | 1 | TO-220AB | ISOLATED | Single | 48W | 30 ns | 48W Tc | 55A | SWITCHING | 0.022Ohm | 70 ns | SILICON | N-Channel | 22m Ω @ 27.5A, 10V | 4V @ 250μA | 1510pF @ 25V | 37nC @ 10V | 130ns | 95 ns | 25V | 60V | 55A Tc | 220A | 480 mJ | 10V | ±25V | ||||||||||||||||||||||||||||||
| 2V7002LT3G | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 20 Weeks | ACTIVE, NOT REC (Last Updated: 1 day ago) | Tape & Reel (TR) | 2007 | Automotive, AEC-Q101 | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-236-3, SC-59, SOT-23-3 | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 3 | YES | FET General Purpose Power | 1 | Halogen Free | Single | 300mW | 20 ns | 225mW Ta | 115mA | SWITCHING | 60V | 40 ns | SILICON | N-Channel | 7.5 Ω @ 500mA, 10V | 2.5V @ 250μA | 50pF @ 25V | 20V | 115mA Tc | 60V | 5 pF | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| FDP2572 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 9 Weeks | ACTIVE (Last Updated: 3 days ago) | Through Hole | Tube | 2002 | PowerTrench® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | 29A | 3 | TO-220-3 | No SVHC | 9.4mm | 4.83mm | Through Hole | 1.8g | -55°C~175°C TJ | 150V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | Not Qualified | 1 | TO-220AB | DRAIN | Single | 135W | 11 ns | 4V | 135W Tc | 29A | SWITCHING | 0.054Ohm | 31 ns | SILICON | N-Channel | 54m Ω @ 9A, 10V | 4V @ 250μA | 1770pF @ 25V | 34nC @ 10V | 14ns | 14 ns | 20V | 150V | 4 V | 4A | 4A Ta 29A Tc | 6V 10V | ±20V | ||||||||||||||||||||||||
| HUF75645S3ST | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | ACTIVE (Last Updated: 3 days ago) | Surface Mount | Tape & Reel (TR) | 2002 | UltraFET™ | yes | Active | 1 (Unlimited) | 2 | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | 75A | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 11.33mm | 4.83mm | 14mOhm | Surface Mount | 1.31247g | -55°C~175°C TJ | 100V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | GULL WING | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 310W | 14 ns | 4V | 310W Tc | 75mA | SWITCHING | 41 ns | SILICON | N-Channel | 14m Ω @ 75A, 10V | 4V @ 250μA | 3790pF @ 25V | 238nC @ 20V | 117ns | 97 ns | 20V | 100V | 4 V | 75A Tc | 10V | ±20V | ||||||||||||||||||||||||||
| FDB060AN08A0 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | ACTIVE (Last Updated: 4 days ago) | Surface Mount | Tape & Reel (TR) | PowerTrench® | yes | Active | 1 (Unlimited) | 2 | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | 80A | No | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.83mm | 11.33mm | 6MOhm | Surface Mount | 1.31247g | -55°C~175°C TJ | 75V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | GULL WING | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 255W | 19 ns | 255W Tc | 80A | SWITCHING | 37 ns | SILICON | N-Channel | 6m Ω @ 80A, 10V | 4V @ 250μA | 5150pF @ 25V | 95nC @ 10V | 79ns | 38 ns | 20V | 75V | 16A Ta 80A Tc | 350 mJ | 6V 10V | ±20V | ||||||||||||||||||||||||||||||
| FDA33N25 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 6 Weeks | ACTIVE (Last Updated: 4 days ago) | Through Hole | Tube | 2014 | UniFET™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | 16.2mm | ROHS3 Compliant | 3 | TO-3P-3, SC-65-3 | 20.1mm | 5mm | Through Hole | 6.401g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | Not Qualified | 1 | Single | 245W | 33 ns | 245W Tc | 33A | SWITCHING | 0.094Ohm | 77 ns | SILICON | N-Channel | 94m Ω @ 16.5A, 10V | 5V @ 250μA | 2200pF @ 25V | 46.8nC @ 10V | 142ns | 68 ns | 30V | 250V | 33A Tc | 10V | ±30V | |||||||||||||||||||||||||||||||||
| NTHL040N65S3F | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | SuperFET® III | yes | Active | Not Applicable | RoHS Compliant | TO-247-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 446W Tc | N-Channel | 40m Ω @ 32.5A, 10V | 5V @ 6.5mA | 5940pF @ 400V | 158nC @ 10V | 65A Tc | 650V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTHL065N65S3F | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | ACTIVE (Last Updated: 4 days ago) | yes | Active | Not Applicable | RoHS Compliant | TO-247-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | e3 | Tin (Sn) | 337W Tc | N-Channel | 65m Ω @ 23A, 10V | 5V @ 4.6mA | 4075pF @ 400V | 98nC @ 10V | 46A Tc | 650V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQL40N50 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 15 Weeks | ACTIVE (Last Updated: 2 days ago) | Through Hole | Tube | QFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 20mm | ROHS3 Compliant | Lead Free | 40A | No | 3 | TO-264-3, TO-264AA | 26mm | 5mm | Through Hole | 6.756g | -55°C~150°C TJ | 500V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | FET General Purpose Power | 1 | ISOLATED | Single | 460W | 140 ns | 460W Tc | 40A | SWITCHING | 350 ns | SILICON | N-Channel | 110m Ω @ 20A, 10V | 5V @ 250μA | 7500pF @ 25V | 200nC @ 10V | 440ns | 250 ns | 30V | 500V | 40A Tc | 10V | ±30V | |||||||||||||||||||||||||||||||||
| NVHL027N65S3F | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 4 Weeks | Automotive, AEC-Q101, SuperFET® III, FRFET® | yes | Active | Not Applicable | Non-RoHS Compliant | TO-247-3 | not_compliant | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | e3 | Tin (Sn) | 595W Tc | N-Channel | 27.4m Ω @ 35A, 10V | 5V @ 3mA | 7780pF @ 400V | 227nC @ 10V | 75A Tc | 650V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NDB5060L | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | ACTIVE (Last Updated: 3 days ago) | Surface Mount | Tape & Reel (TR) | yes | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Lead Free | 26A | No | 3 | LOGIC LEVEL COMPATIBLE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -65°C~175°C TJ | 60V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 26A | GULL WING | R-PSSO-G2 | FET General Purpose Power | 60V | 1 | DRAIN | Single | 68W | 13 ns | 68W Tc | 26A | SWITCHING | 0.05Ohm | 45 ns | SILICON | N-Channel | 35m Ω @ 13A, 10V | 2V @ 250μA | 840pF @ 30V | 24nC @ 5V | 200ns | 102 ns | 16V | 60V | 26A Tc | 5V 10V | ±16V | ||||||||||||||||||||||||||||||||||
| FQP2P40-F080 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 7 Weeks | ACTIVE (Last Updated: 1 day ago) | Through Hole | Tube | QFET® | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | 3 | TO-220-3 | Through Hole | 1.8g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 1 | Other Transistors | 1 | TO-220AB | Single | 30 ns | 63W Tc | 2A | SWITCHING | 55 ns | SILICON | P-Channel | 6.5 Ω @ 1A, 10V | 5V @ 250μA | 350pF @ 25V | 13nC @ 10V | 75ns | 60 ns | 30V | -400V | 2A | 2A Tc | 400V | 8A | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| FQPF630 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 4 Weeks | ACTIVE (Last Updated: 6 days ago) | Through Hole | Tube | 2000 | QFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.16mm | ROHS3 Compliant | Lead Free | 6.3A | No | 3 | TO-220-3 Full Pack | 9.19mm | 4.7mm | Through Hole | 2.27g | -55°C~150°C TJ | 200V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | FET General Purpose Power | 1 | TO-220AB | ISOLATED | Single | 38W | 8 ns | 38W Tc | 6.3A | SWITCHING | 0.4Ohm | 47 ns | SILICON | N-Channel | 400m Ω @ 3.15A, 10V | 4V @ 250μA | 550pF @ 25V | 25nC @ 10V | 75ns | 64 ns | 25V | 200V | 6.3A Tc | 25.2A | 10V | ±25V |