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RF/IF & RFID
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ON Semiconductor(36350)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Lifecycle Status | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Polarity/Channel Type | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Power Dissipation-Max | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| FDP6030BL | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | ACTIVE (Last Updated: 3 days ago) | Through Hole | Tube | 2000 | PowerTrench® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | 40A | No | 3 | TO-220-3 | 9.4mm | 4.83mm | 18MOhm | Through Hole | 1.8g | -65°C~175°C TJ | 30V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | FET General Purpose Power | 1 | TO-220AB | Single | 60W | 9 ns | 60W Tc | 40A | SWITCHING | 23 ns | SILICON | N-Channel | 18m Ω @ 20A, 10V | 3V @ 250μA | 1160pF @ 15V | 17nC @ 5V | 11ns | 8 ns | 20V | 30V | 40A Tc | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
| FQPF5N50CYDTU | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 4 Weeks | ACTIVE (Last Updated: 4 days ago) | Through Hole | Tube | 2003 | QFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.16mm | ROHS3 Compliant | Lead Free | 5A | No | 3 | TO-220-3 Full Pack, Formed Leads | 15.87mm | 4.7mm | Through Hole | 2.565g | -55°C~150°C TJ | 500V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | FET General Purpose Power | 1 | TO-220AB | ISOLATED | Single | 38W | 12 ns | 38W Tc | 5A | SWITCHING | 50 ns | SILICON | N-Channel | 1.4 Ω @ 2.5A, 10V | 4V @ 250μA | 625pF @ 25V | 24nC @ 10V | 46ns | 48 ns | 30V | 500V | 5A | 5A Tc | 20A | 10V | ±30V | ||||||||||||||||||||||||||||
| FQH8N100C | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
4 Weeks | ACTIVE (Last Updated: 2 days ago) | Through Hole | Tube | 2013 | QFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 15.87mm | ROHS3 Compliant | 3 | TO-247-3 | not_compliant | 20.82mm | 4.82mm | Through Hole | 6.39g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | Not Qualified | 1 | TO-247AB | Single | 225W | 50 ns | 225W Tc | 8A | SWITCHING | 122 ns | SILICON | N-Channel | 1.45 Ω @ 4A, 10V | 5V @ 250μA | 3220pF @ 25V | 70nC @ 10V | 95ns | 80 ns | 30V | 1kV | 8A | 8A Tc | 1000V | 850 mJ | 10V | ±30V | |||||||||||||||||||||||||||||
| FQPF9P25 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 4 Weeks | Tube | 2013 | QFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-220-3 Full Pack | not_compliant | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 8541.29.00.95 | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | NO | R-PSFM-T3 | Other Transistors | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | ISOLATED | 50W Tc | SWITCHING | 0.62Ohm | 250V | SILICON | P-Channel | 620m Ω @ 3A, 10V | 5V @ 250μA | 1180pF @ 25V | 38nC @ 10V | 6A | 6A Tc | 250V | 24A | 650 mJ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| FQPF8N60CFT | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 9 Weeks | ACTIVE (Last Updated: 2 days ago) | Through Hole | Tube | 2013 | FRFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | No | 3 | TO-220-3 Full Pack | Through Hole | 2.27g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 8541.29.00.95 | e3 | Tin (Sn) | FET General Purpose Power | 1 | TO-220AB | ISOLATED | Single | 48W | 16.5 ns | 48W Tc | 6.26A | SWITCHING | 81 ns | SILICON | N-Channel | 1.5 Ω @ 3.13A, 10V | 4V @ 250μA | 1255pF @ 25V | 36nC @ 10V | 60.5ns | 64.5 ns | 30V | 600V | 6.26A Tc | 25A | 160 mJ | 10V | ±30V | |||||||||||||||||||||||||||||||||
| FQPF16N25C | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 7 Weeks | ACTIVE (Last Updated: 1 day ago) | Through Hole | Tube | 2004 | QFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.16mm | ROHS3 Compliant | Lead Free | 16A | No | 3 | TO-220-3 Full Pack | 9.19mm | 4.7mm | Through Hole | 2.27g | -55°C~150°C TJ | 250V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | FET General Purpose Power | 1 | TO-220AB | ISOLATED | Single | 43W | 15 ns | 43W Tc | 15.6A | SWITCHING | 0.27Ohm | 135 ns | SILICON | N-Channel | 270m Ω @ 7.8A, 10V | 4V @ 250μA | 1080pF @ 25V | 53.5nC @ 10V | 130ns | 105 ns | 30V | 250V | 15.6A Tc | 62.4A | 10V | ±30V | ||||||||||||||||||||||||||||
| FQP10N20C | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | ACTIVE (Last Updated: 2 days ago) | Through Hole | Tube | 2013 | QFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.1mm | ROHS3 Compliant | Lead Free | 9.5A | No | 3 | TO-220-3 | 9.4mm | 4.7mm | 360mOhm | Through Hole | 1.8g | -55°C~150°C TJ | 200V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | FET General Purpose Power | 1 | TO-220AB | Single | 72W | 11 ns | 72W Tc | 9.5A | SWITCHING | 70 ns | SILICON | N-Channel | 360m Ω @ 4.75A, 10V | 4V @ 250μA | 510pF @ 25V | 26nC @ 10V | 92ns | 72 ns | 30V | 200V | 9.5A Tc | 10V | ±30V | ||||||||||||||||||||||||||||||
| FDA16N50-F109 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 4 Weeks | ACTIVE (Last Updated: 1 day ago) | Through Hole | Tube | UniFET™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | No | 3 | AVALANCHE RATED | TO-3P-3, SC-65-3 | No SVHC | Through Hole | 6.401g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | TIN | 260 | FET General Purpose Power | 1 | Single | 205W | 40 ns | 5V | 205W Tc | 16.5A | SWITCHING | 65 ns | SILICON | N-Channel | 380m Ω @ 8.3A, 10V | 5V @ 250μA | 1945pF @ 25V | 45nC @ 10V | 150ns | 80 ns | 30V | 500V | 16.5A Tc | 66A | 780 mJ | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| FCP190N60E | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | ACTIVE (Last Updated: 2 days ago) | Through Hole | Tube | 2017 | SuperFET® II | yes | Active | 1 (Unlimited) | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | 3 | TO-220-3 | No SVHC | 16.51mm | 4.83mm | Through Hole | 1.8g | -55°C~150°C TJ | MOSFET (Metal Oxide) | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | 1 | Single | 208W | 23 ns | 2.5V | 208W Tc | 20.6A | 101 ns | N-Channel | 190m Ω @ 10A, 10V | 3.5V @ 250μA | 3175pF @ 25V | 82nC @ 10V | 14ns | 15 ns | 20V | 20.6A Tc | 600V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| FDPF10N60ZUT | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 4 Weeks | ACTIVE (Last Updated: 3 days ago) | Through Hole | Tube | 2015 | UniFET™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | No | TO-220-3 Full Pack | Through Hole | 2.27g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | R-PSFM-T3 | FET General Purpose Power | 1 | TO-220AB | ISOLATED | Single | 42W | 25 ns | 42W Tc | 9A | SWITCHING | 0.8Ohm | 95 ns | SILICON | N-Channel | 800m Ω @ 4.5A, 10V | 5V @ 250μA | 1980pF @ 25V | 40nC @ 10V | 40ns | 60 ns | 30V | 600V | 9A | 9A Tc | 36A | 10V | ±30V | ||||||||||||||||||||||||||||||||
| BFL4026-1E | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 2 Weeks | ACTIVE (Last Updated: 2 days ago) | Tube | 2012 | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-220-3 Full Pack | not_compliant | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | 1 | TO-220AB | ISOLATED | Single | 14 ns | 2W Ta 35W Tc | 3.5A | 900V | 117 ns | SILICON | N-Channel | 3.6 Ω @ 2.5A, 10V | 650pF @ 30V | 33nC @ 10V | 37ns | 39 ns | 30V | 3.5A Tc | 900V | 10A | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| HUF75639G3 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | ACTIVE (Last Updated: 3 days ago) | Through Hole | Tube | 2002 | UltraFET™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | 15.87mm | ROHS3 Compliant | Lead Free | Tin | 56A | No | 3 | TO-247-3 | No SVHC | 20.82mm | 4.82mm | Through Hole | 6.39g | -55°C~175°C TJ | 100V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | FET General Purpose Power | 1 | DRAIN | Single | 200W | 15 ns | 4V | 200W Tc | 56A | SWITCHING | 0.025Ohm | 20 ns | SILICON | N-Channel | 25m Ω @ 56A, 10V | 4V @ 250μA | 2000pF @ 25V | 130nC @ 20V | 60ns | 25 ns | 20V | 100V | 4 V | 56A Tc | 10V | ±20V | |||||||||||||||||||||||||||
| NTR4003NT1G | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | ACTIVE (Last Updated: 3 days ago) | Tape & Reel (TR) | 2006 | yes | Active | 1 (Unlimited) | 3 | EAR99 | 3.04mm | ROHS3 Compliant | Lead Free | Tin | No | 3 | TO-236-3, SC-59, SOT-23-3 | No SVHC | 1.01mm | 1.4mm | 1Ohm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 260 | 40 | 3 | YES | FET General Purpose Power | 1 | Single | 690mW | 16.7 ns | 1.4V | 690mW Ta | 500mA | SWITCHING | 65.1 ns | SILICON | N-Channel | 1.5 Ω @ 10mA, 4V | 1.4V @ 250μA | 21pF @ 5V | 1.15nC @ 5V | 47.9ns | 47.9 ns | 20V | 30V | 1.4 V | 0.5A | 500mA Ta | 2.5V 4V | ±20V | ||||||||||||||||||||||||||
| MCH3375-TL-W | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 5 Weeks | ACTIVE (Last Updated: 1 day ago) | Surface Mount | Tape & Reel (TR) | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | 3-SMD, Flat Lead | Surface Mount | 150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e6 | Tin/Bismuth (Sn/Bi) | DUAL | R-PDSO-F3 | 1 | SINGLE WITH BUILT-IN DIODE | 800mW Ta | 1.6A | SWITCHING | 0.295Ohm | 30V | SILICON | P-Channel | 295m Ω @ 800mA, 10V | 2.6V @ 1mA | 82pF @ 10V | 2.2nC @ 10V | 1.6A Ta | 30V | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| NTMFS4C10NT1G | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | ACTIVE (Last Updated: 20 hours ago) | Tape & Reel (TR) | 2013 | yes | Active | 1 (Unlimited) | 5 | EAR99 | 6.1mm | ROHS3 Compliant | Lead Free | 5 | 8-PowerTDFN | No SVHC | not_compliant | 1.05mm | 5.1mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | 5 | YES | 1 | FET General Purpose Power | 1 | DRAIN | Single | 9 ns | 2.2V | 750mW Ta 23.6W Tc | 46A | SWITCHING | 30V | 14 ns | SILICON | N-Channel | 6.95m Ω @ 30A, 10V | 2.2V @ 250μA | 987pF @ 15V | 9.7nC @ 4.5V | 34ns | 7 ns | 20V | 8.2A | 8.2A Ta | 30V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||
| FQD7P06TM | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 4 Weeks | ACTIVE (Last Updated: 2 days ago) | Surface Mount | Tape & Reel (TR) | 2001 | QFET® | yes | Active | 1 (Unlimited) | 2 | EAR99 | 6.73mm | ROHS3 Compliant | Lead Free | -5.4A | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.39mm | 6.22mm | 450mOhm | Surface Mount | 260.37mg | -55°C~150°C TJ | -60V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | GULL WING | R-PSSO-G2 | Other Transistors | 1 | DRAIN | Single | 2.5W | 7 ns | 2.5W Ta 28W Tc | 5.4A | SWITCHING | 7.5 ns | SILICON | P-Channel | 451m Ω @ 2.7A, 10V | 4V @ 250μA | 295pF @ 25V | 8.2nC @ 10V | 50ns | 25 ns | 25V | -60V | 5.4A Tc | 60V | 90 mJ | 10V | ±25V | ||||||||||||||||||||||||||
| FQT3P20TF | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | ACTIVE (Last Updated: 4 days ago) | Surface Mount | Tape & Reel (TR) | 2001 | QFET® | yes | Active | 1 (Unlimited) | 4 | EAR99 | 6.5mm | ROHS3 Compliant | Lead Free | -670mA | No | TO-261-4, TO-261AA | 1.6mm | 3.56mm | 2.7Ohm | Surface Mount | 188mg | -55°C~150°C TJ | -200V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | GULL WING | R-PDSO-G4 | Other Transistors | 1 | DRAIN | Single | 2.5W | 8.5 ns | 2.5W Tc | 670mA | SWITCHING | 12 ns | SILICON | P-Channel | 2.7 Ω @ 335mA, 10V | 5V @ 250μA | 250pF @ 25V | 8nC @ 10V | 35ns | 25 ns | 30V | -200V | 0.67A | 670mA Tc | 200V | 2.7A | 10V | ±30V | |||||||||||||||||||||||||
| FQD5N20LTM | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 4 Weeks | ACTIVE (Last Updated: 1 day ago) | Surface Mount | Tape & Reel (TR) | QFET® | yes | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Lead Free | 3.8A | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | 260.37mg | -55°C~150°C TJ | 200V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | DRAIN | Single | 2.5W | 9 ns | 2.5W Ta 37W Tc | 3.8A | SWITCHING | 15 ns | SILICON | N-Channel | 1.2 Ω @ 1.9A, 10V | 2V @ 250μA | 325pF @ 25V | 6.2nC @ 5V | 90ns | 50 ns | 20V | 200V | 3.8A Tc | 60 mJ | 5V 10V | ±20V | |||||||||||||||||||||||||||||
| FQD5N15TM | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 4 Weeks | ACTIVE (Last Updated: 1 day ago) | Surface Mount | Tape & Reel (TR) | QFET® | yes | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Lead Free | 4A | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | 260.37mg | -55°C~150°C TJ | 150V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 8541.29.00.95 | e3 | Tin (Sn) | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | DRAIN | Single | 2.5W | 5 ns | 2.5W Ta 30W Tc | 4.3A | SWITCHING | 0.8Ohm | 13 ns | SILICON | N-Channel | 800m Ω @ 2.15A, 10V | 4V @ 250μA | 230pF @ 25V | 7nC @ 10V | 45ns | 25 ns | 25V | 150V | 4.3A Tc | 17.2A | 55 mJ | 10V | ±25V | ||||||||||||||||||||||||||
| NTNS3190NZT5G | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 7 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | 3 | 3-XFDFN | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | BOTTOM | NO LEAD | 1 | 1 | SINGLE WITH BUILT-IN DIODE AND RESISTOR | DRAIN | 18 ns | 120mW Ta | 224mA | SWITCHING | 20V | 201 ns | SILICON | N-Channel | 1.4 Ω @ 100mA, 4.5V | 1V @ 250μA | 15.8pF @ 15V | 0.7nC @ 4.5V | 35ns | 110 ns | 8V | 224mA Ta | 20V | 1.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||
| NVD3055L170T4G | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | ACTIVE (Last Updated: 2 days ago) | Tape & Reel (TR) | 2009 | yes | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | 3.949996g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | GULL WING | 3 | YES | R-PSSO-G2 | 1 | FET General Purpose Power | 1 | DRAIN | Single | 9.7 ns | 1.5W Ta 28.5W Tj | 9A | SWITCHING | 10 ns | SILICON | N-Channel | 170m Ω @ 4.5A, 5V | 2V @ 250μA | 275pF @ 25V | 10nC @ 5V | 69ns | 38 ns | 15V | 60V | 9A | 9A Ta | 27A | 5V | ±15V | ||||||||||||||||||||||||||||||||
| NVTFS4C08NTAG | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | ACTIVE (Last Updated: 1 week ago) | Surface Mount | Tape & Reel (TR) | 2014 | yes | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Lead Free | 8 | 8-PowerWDFN | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | S-PDSO-F5 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 31W | 3.1W Ta 31W Tc | 17A | 0.0059Ohm | 30V | SILICON | N-Channel | 5.9m Ω @ 30A, 10V | 2.2V @ 250μA | 1113pF @ 15V | 18.2nC @ 10V | 20V | 55A | 17A Ta | 30V | 253A | 20 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| NVMFS5C468NT1G | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 5 Weeks | ACTIVE (Last Updated: 1 week ago) | Tape & Reel (TR) | Automotive, AEC-Q101 | yes | Active | 1 (Unlimited) | RoHS Compliant | 8-PowerTDFN, 5 Leads | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 3.5W Ta 28W Tc | N-Channel | 12m Ω @ 10A, 10V | 3.5V @ 250μA | 420pF @ 25V | 7.9nC @ 10V | 12A Ta 35A Tc | 40V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQP50N06L | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 9 Weeks | ACTIVE (Last Updated: 3 days ago) | Through Hole | Tube | 2013 | QFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.1mm | ROHS3 Compliant | Lead Free | 52.4A | No | 3 | TO-220-3 | No SVHC | 9.4mm | 4.7mm | 21MOhm | Through Hole | 1.8g | -55°C~175°C TJ | 60V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | FET General Purpose Power | 1 | TO-220AB | Single | 121W | 20 ns | 2.5V | 121W Tc | 52A | SWITCHING | 80 ns | SILICON | N-Channel | 21m Ω @ 26.2A, 10V | 2.5V @ 250μA | 1630pF @ 25V | 32nC @ 5V | 380ns | 145 ns | 20V | 60V | 52.4A Tc | 990 mJ | 5V 10V | ±20V | |||||||||||||||||||||||||||
| NTB25P06T4G | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 7 Weeks | ACTIVE (Last Updated: 4 days ago) | Tape & Reel (TR) | 2012 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 10.29mm | ROHS3 Compliant | Lead Free | Tin | -25A | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.83mm | 9.65mm | Surface Mount | -55°C~175°C TJ | -60V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 3 | YES | R-PSSO-G2 | Other Transistors | 1 | DRAIN | N-CHANNEL | Single | 120W | 14 ns | 120W Tj | 27.5A | SWITCHING | 0.082Ohm | 43 ns | SILICON | P-Channel | 82m Ω @ 25A, 10V | 4V @ 250μA | 1680pF @ 25V | 50nC @ 10V | 72ns | 190 ns | 15V | -60V | 27.5A Ta | 60V | 80A | 600 mJ | 10V | ±15V | |||||||||||||||||||||||||
| NVD6824NLT4G | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 6 Weeks | LIFETIME (Last Updated: 2 days ago) | Tape & Reel (TR) | 2013 | yes | Obsolete | 1 (Unlimited) | 2 | EAR99 | 6.73mm | ROHS3 Compliant | Lead Free | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | 2.51mm | 6.22mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 3 | YES | R-PSSO-G2 | 1 | FET General Purpose Power | 1 | DRAIN | Single | 3.9W | 15 ns | 3.9W Ta 90W Tc | 8.5A | 175°C | 31 ns | SILICON | N-Channel | 20m Ω @ 20A, 10V | 2.5V @ 250μA | 3468pF @ 25V | 66nC @ 10V | 55ns | 42 ns | 20V | 100V | 8.5A Ta 41A Tc | 80 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||
| NVMFS5C426NLT1G | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 4 Weeks | ACTIVE (Last Updated: 2 days ago) | Tape & Reel (TR) | Automotive, AEC-Q101 | yes | Active | 1 (Unlimited) | RoHS Compliant | 8-PowerTDFN, 5 Leads | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 3.8W Ta 128W Tc | N-Channel | 1.2m Ω @ 50A, 10V | 2V @ 250μA | 5600pF @ 25V | 93nC @ 10V | 41A Ta 237A Tc | 40V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFS4982NFT1G | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | ACTIVE (Last Updated: 2 days ago) | Tape & Reel (TR) | 2014 | yes | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Lead Free | Tin | No | 5 | 8-PowerTDFN | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | FLAT | 5 | YES | 1 | Other Transistors | 1 | DRAIN | Single | 17.2 ns | 1.5W Ta | 207A | SWITCHING | 34.3 ns | SILICON | N-Channel | 1.3m Ω @ 25A, 10V | 2.2V @ 1mA | 6000pF @ 15V | 84nC @ 10V | 31.6ns | 12 ns | 20V | 30V | 36A | 26.5A Ta 207A Tc | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| NTMFS4931NT1G | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | ACTIVE (Last Updated: 3 days ago) | Tape & Reel (TR) | 2014 | yes | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Lead Free | 5 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 5 | YES | FET General Purpose Power | 1 | DRAIN | Single | 950mW Ta | 246A | SWITCHING | 30V | SILICON | N-Channel | 1.1m Ω @ 30A, 10V | 2.2V @ 250μA | 9821pF @ 15V | 128nC @ 10V | 23A | 23A Ta 246A Tc | 30V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| FDMS8027S | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | ACTIVE (Last Updated: 2 days ago) | Surface Mount | Tape & Reel (TR) | 2006 | PowerTrench®, SyncFET™ | yes | Active | 1 (Unlimited) | 5 | EAR99 | 5mm | ROHS3 Compliant | Tin | No | 8 | 8-PowerTDFN | No SVHC | 1.05mm | 6mm | Surface Mount | 74mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | FLAT | R-PDSO-F5 | FET General Purpose Power | 1 | MO-240AA | DRAIN | Single | 36W | 10 ns | 2.5W Ta 36W Tc | 22A | SWITCHING | 0.005Ohm | 25 ns | SILICON | N-Channel | 5m Ω @ 18A, 10V | 3V @ 1mA | 1815pF @ 15V | 31nC @ 10V | 2.3ns | 6 ns | 20V | 30V | 1.5 V | 18A Ta 22A Tc | 33 mJ | 4.5V 10V | ±20V |