Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Packaging | Published | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | RoHS Status | Voltage - Rated | Additional Feature | Package / Case | Reach Compliance Code | Frequency | Operating Mode | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Surface Mount | JESD-30 Code | Operating Temperature (Max) | Operating Temperature (Min) | Subcategory | Qualification Status | Gain | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Current Rating (Amps) | Polarity/Channel Type | Power Dissipation-Max (Abs) | Transistor Application | DS Breakdown Voltage-Min | FET Technology | Source Url Status Check Date | Transistor Element Material | Drain Current-Max (Abs) (ID) | Feedback Cap-Max (Crss) | Current - Test | Transistor Type | Voltage - Test | Highest Frequency Band | Noise Figure | Power - Output | Power Dissipation Ambient-Max |
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MRF8P20100HSR3 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
10 Weeks | Tape & Reel (TR) | 2006 | Obsolete | Not Applicable | EAR99 | ROHS3 Compliant | 65V | NI-780S-4 | 2.03GHz | 8541.29.00.75 | MRF8P20100 | 16dB | 400mA | LDMOS (Dual) | 28V | 20W | |||||||||||||||||||||||||||||||||||||||
ON5448,518 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
Tape & Reel (TR) | 2008 | Active | 3 (168 Hours) | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||
ON5452,518 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
Tape & Reel (TR) | 2010 | Active | 3 (168 Hours) | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||
MRF8P18265HSR5 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
Tape & Reel (TR) | 2012 | Obsolete | 1 (Unlimited) | ROHS3 Compliant | 65V | SOT-1110B | 1.88GHz | MRF8P18265 | 16dB | 800mA | LDMOS | 30V | 72W | ||||||||||||||||||||||||||||||||||||||||||
MRF8S19140HSR5 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
Tape & Reel (TR) | Obsolete | 1 (Unlimited) | ROHS3 Compliant | 65V | NI-780S | 1.96GHz | MRF8S19140 | 19.1dB | 1.1A | LDMOS | 28V | 34W | |||||||||||||||||||||||||||||||||||||||||||
MRF8S19260HSR5 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
Tape & Reel (TR) | 2012 | Obsolete | 1 (Unlimited) | ROHS3 Compliant | 65V | SOT-1110B | 1.99GHz | MRF8S19260 | 18.2dB | 1.6A | LDMOS (Dual) | 30V | 74W | ||||||||||||||||||||||||||||||||||||||||||
BF908R,235 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 1996 | Obsolete | 1 (Unlimited) | ROHS3 Compliant | 12V | SOT-143R | 200MHz | BF908 | 4 | 40mA | 2013-06-14 00:00:00 | 15mA | N-Channel Dual Gate | 8V | 0.6dB | |||||||||||||||||||||||||||||||||||||||
MRFE6VP61K25HSR6 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 2011 | Discontinued | 3 (168 Hours) | ROHS3 Compliant | 133V | NI-1230S | 230MHz | MRFE6VP61K25 | 24dB | 100mA | LDMOS (Dual) | 50V | 1250W | |||||||||||||||||||||||||||||||||||||||||
MRF8HP21080HSR3 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
Tape & Reel (TR) | 2011 | Obsolete | Not Applicable | 4 | EAR99 | ROHS3 Compliant | 65V | NI-780S-4 | 2.17GHz | ENHANCEMENT MODE | 8541.29.00.75 | FLAT | 260 | 40 | MRF8HP21080 | YES | R-CDFP-F4 | 225°C | FET General Purpose Power | Not Qualified | 14.4dB | 2 | COMMON SOURCE, 2 ELEMENTS | SOURCE | N-CHANNEL | AMPLIFIER | 65V | METAL-OXIDE SEMICONDUCTOR | SILICON | 150mA | LDMOS (Dual) | 28V | 16W | ||||||||||||||||||||||
BF513,215 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Tape & Reel (TR) | 1997 | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | 20V | LOW NOISE | TO-236-3, SC-59, SOT-23-3 | 100MHz | DEPLETION MODE | 8541.21.00.75 | e3 | Tin (Sn) | DUAL | GULL WING | 260 | NOT SPECIFIED | 3 | YES | R-PDSO-G3 | 150°C | Other Transistors | Not Qualified | 1 | SINGLE | 30mA | 0.25W | AMPLIFIER | 20V | JUNCTION | SILICON | 0.03A | 0.4 pF | 5mA | N-Channel JFET | 10V | 1.5dB | |||||||||||||||
MW6S010GNR1 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Tape & Reel (TR) | 2009 | Active | 3 (168 Hours) | 2 | EAR99 | ROHS3 Compliant | 68V | TO-270BA | not_compliant | 960MHz | ENHANCEMENT MODE | 8541.29.00.75 | e3 | Tin (Sn) | DUAL | GULL WING | 260 | 40 | MW6S010 | YES | R-PDSO-G2 | 225°C | FET General Purpose Power | Not Qualified | 18dB | 1 | SINGLE | SOURCE | N-CHANNEL | 61.4W | AMPLIFIER | 68V | METAL-OXIDE SEMICONDUCTOR | SILICON | 125mA | LDMOS | 28V | 10W | |||||||||||||||
MRFE6S9060NR1 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Tape & Reel (TR) | 2007 | Active | 3 (168 Hours) | 2 | EAR99 | ROHS3 Compliant | 66V | TO-270AA | not_compliant | 880MHz | ENHANCEMENT MODE | 8541.29.00.75 | e3 | Tin (Sn) | DUAL | FLAT | 260 | 40 | MRFE6S9060 | YES | R-PDFM-F2 | 225°C | FET General Purpose Power | Not Qualified | 21.1dB | 1 | SINGLE | SOURCE | N-CHANNEL | AMPLIFIER | 66V | METAL-OXIDE SEMICONDUCTOR | SILICON | 450mA | LDMOS | 28V | 14W | ||||||||||||||||
BF556A,235 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Tape & Reel (TR) | Obsolete | 1 (Unlimited) | ROHS3 Compliant | 30V | TO-236-3, SC-59, SOT-23-3 | e3 | Tin (Sn) | BF556 | 3 | YES | 150°C | Other Transistors | 7mA | 0.25W | JUNCTION | 2013-06-14 00:00:00 | N-Channel JFET | ||||||||||||||||||||||||||||||||||||
BF545A,215 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Tape & Reel (TR) | 2001 | Obsolete | 1 (Unlimited) | 3 | ROHS3 Compliant | 30V | TO-236-3, SC-59, SOT-23-3 | DEPLETION MODE | 8541.21.00.75 | e3 | TIN | DUAL | GULL WING | 260 | NOT SPECIFIED | BF545 | 3 | YES | R-PDSO-G3 | 150°C | Other Transistors | Not Qualified | 1 | SINGLE | TO-236AB | 6.5mA | 0.25W | AMPLIFIER | 30V | JUNCTION | SILICON | N-Channel JFET | VERY HIGH FREQUENCY B | ||||||||||||||||||||
BF998R,235 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 1996 | Obsolete | 1 (Unlimited) | ROHS3 Compliant | 12V | SOT-143R | 200MHz | BF998 | 4 | 30mA | 2013-06-14 00:00:00 | 10mA | N-Channel Dual Gate | 8V | 0.6dB | |||||||||||||||||||||||||||||||||||||||
BF1211,215 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 2003 | Obsolete | 1 (Unlimited) | 4 | EAR99 | ROHS3 Compliant | 6V | LOW NOISE | TO-253-4, TO-253AA | unknown | 400MHz | DUAL GATE, ENHANCEMENT MODE | 8541.21.00.75 | e3 | Tin (Sn) | GULL WING | 260 | 40 | BF1211 | 4 | YES | R-PDSO-G4 | 150°C | FET General Purpose Power | Not Qualified | 29dB | 2 | COMPLEX | SOURCE | 30mA | 0.18W | AMPLIFIER | 6V | METAL-OXIDE SEMICONDUCTOR | SILICON | 0.03A | 0.03 pF | 15mA | N-Channel Dual Gate | 5V | 0.9dB | |||||||||||||
MRFE6VS25NR1 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
10 Weeks | Tape & Reel (TR) | 2006 | Active | 3 (168 Hours) | 2 | EAR99 | ROHS3 Compliant | 133V | TO-270AA | 512MHz | ENHANCEMENT MODE | 8541.29.00.75 | e3 | Matte Tin (Sn) | DUAL | FLAT | 260 | 40 | MRFE6VS25 | YES | R-PDFM-F2 | 150°C | -40°C | FET General Purpose Power | 25.4dB | 1 | Single | N-CHANNEL | 133V | METAL-OXIDE SEMICONDUCTOR | 10mA | LDMOS | 50V | 25W | 25W | ||||||||||||||||||||
MRFE6VP6600NR3 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Tape & Reel (TR) | 2007 | Active | 3 (168 Hours) | EAR99 | ROHS3 Compliant | 133V | OM780-4 | 230MHz | 8541.29.00.75 | NOT SPECIFIED | NOT SPECIFIED | 24.7dB | 100mA | LDMOS (Dual) | 50V | 600W | |||||||||||||||||||||||||||||||||||||
AFT21H350W03SR6 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
10 Weeks | Tape & Reel (TR) | 2006 | Not For New Designs | Not Applicable | EAR99 | ROHS3 Compliant | 65V | NI-1230S | 2.11GHz | 8541.29.00.40 | 260 | 40 | 125°C | FET General Purpose Power | 16.4dB | Single | N-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 750mA | LDMOS | 28V | 63W | |||||||||||||||||||||||||||||||||
MRF6V12500HR5 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Tape & Reel (TR) | 2010 | Active | Not Applicable | 2 | EAR99 | ROHS3 Compliant | 110V | SOT-957A | 1.03GHz | ENHANCEMENT MODE | 8541.29.00.75 | DUAL | FLAT | 260 | 40 | MRF6V12500 | YES | R-CDFM-F2 | 225°C | FET General Purpose Power | Not Qualified | 19.7dB | 1 | SINGLE | SOURCE | N-CHANNEL | AMPLIFIER | 110V | METAL-OXIDE SEMICONDUCTOR | SILICON | 200mA | LDMOS | 50V | 500W | |||||||||||||||||||
MRF7S18125BHSR3 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 2008 | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 65V | NI-780S | 1.93GHz | MRF7S18125 | 16.5dB | 1.1A | LDMOS | 28V | 125W | |||||||||||||||||||||||||||||||||||||||||
MRF8S18120HSR5 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 2006 | Discontinued | 3 (168 Hours) | ROHS3 Compliant | 65V | NI-780S | 1.81GHz | MRF8S18120 | 18.2dB | 800mA | LDMOS | 28V | 72W | |||||||||||||||||||||||||||||||||||||||||
MRF8S21200HSR6 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Tape & Reel (TR) | 2010 | Obsolete | 3 (168 Hours) | 4 | EAR99 | ROHS3 Compliant | 65V | NI-1230S | 2.14GHz | ENHANCEMENT MODE | 8541.29.00.75 | FLAT | 260 | 40 | MRF8S21200 | YES | R-CDFP-F4 | 225°C | FET General Purpose Power | Not Qualified | 18.1dB | 2 | COMMON SOURCE, 2 ELEMENTS | SOURCE | N-CHANNEL | AMPLIFIER | 65V | METAL-OXIDE SEMICONDUCTOR | SILICON | 1.4A | LDMOS (Dual) | 28V | 48W | ||||||||||||||||||||
MRFG35010AR1 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 2009 | Obsolete | 1 (Unlimited) | EAR99 | ROHS3 Compliant | 15V | NI-360HF | 3.55GHz | MRFG35010 | 10dB | 140mA | pHEMT FET | 12V | 1W | ||||||||||||||||||||||||||||||||||||||||
MRF9045NR1 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 2008 | Obsolete | 3 (168 Hours) | 2 | 5A991 | Non-RoHS Compliant | 65V | TO-270AA | 945MHz | ENHANCEMENT MODE | 8541.29.00.75 | e3 | Matte Tin (Sn) | DUAL | FLAT | 260 | 40 | MRF9045 | YES | R-PDFP-F2 | 200°C | Not Qualified | 19dB | 1 | SINGLE | SOURCE | N-CHANNEL | AMPLIFIER | 65V | METAL-OXIDE SEMICONDUCTOR | SILICON | 350mA | LDMOS | 28V | 45W | |||||||||||||||||||
MRF6S24140HS | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | Bulk | 2012 | Obsolete | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | 68V | NI-880S | 2.39GHz | ENHANCEMENT MODE | 8541.29.00.75 | DUAL | FLAT | 260 | 40 | MRF6S24140 | YES | R-CDFP-F2 | 225°C | FET General Purpose Power | Not Qualified | 15.2dB | 1 | SINGLE | SOURCE | N-CHANNEL | 68V | METAL-OXIDE SEMICONDUCTOR | SILICON | 1.3A | LDMOS | 28V | 28W | |||||||||||||||||||||
MRF7S19170HR3 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 2009 | Obsolete | 1 (Unlimited) | EAR99 | ROHS3 Compliant | 65V | NI-880 | 1.99GHz | 8541.29.00.75 | MRF7S19170 | 17.2dB | 1.4A | LDMOS | 28V | 50W | |||||||||||||||||||||||||||||||||||||||
MRF18085ALSR5 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 2011 | Obsolete | 1 (Unlimited) | ROHS3 Compliant | 65V | NI-780S | 1.81GHz~1.88GHz | 15dB | 800mA | LDMOS | 26V | 85W | ||||||||||||||||||||||||||||||||||||||||||
MRF1550FNT1 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 2001 | Obsolete | 1 (Unlimited) | 6 | EAR99 | Non-RoHS Compliant | 40V | TO-272BA | 175MHz | ENHANCEMENT MODE | 8541.29.00.75 | e3 | Matte Tin (Sn) | DUAL | FLAT | 260 | 40 | MRF1550 | YES | R-PDFM-F6 | 200°C | FET General Purpose Power | Not Qualified | 14.5dB | 1 | SINGLE | SOURCE | 12A | N-CHANNEL | 165W | AMPLIFIER | 40V | METAL-OXIDE SEMICONDUCTOR | SILICON | 12A | 500mA | LDMOS | 12.5V | 50W | |||||||||||||||
MRF21085LSR3 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 2011 | Obsolete | 1 (Unlimited) | ROHS3 Compliant | 65V | NI-780S | 2.11GHz~2.17GHz | 13.6dB | 1A | LDMOS | 28V | 19W |
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