Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Packaging | Published | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | RoHS Status | Voltage - Rated | Package / Case | Reach Compliance Code | Frequency | Operating Mode | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Surface Mount | JESD-30 Code | Operating Temperature (Max) | Subcategory | Qualification Status | Gain | Number of Elements | Configuration | Case Connection | Current Rating (Amps) | Polarity/Channel Type | Power Dissipation-Max (Abs) | RF/Microwave Device Type | Transistor Application | DS Breakdown Voltage-Min | FET Technology | Transistor Element Material | Current - Test | Transistor Type | Voltage - Test | Power - Output |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
MMRF2011NT1 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
12 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 28V | 24-QFN Exposed Pad | 728MHz~960MHz | LDMOS | 1.6W | |||||||||||||||||||||||||||||||||||||
MHT1108NT1 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Tape & Reel (TR) | 2006 | Active | 3 (168 Hours) | EAR99 | RoHS Compliant | 65V | 16-VDFN Exposed Pad | compliant | 2.45GHz | NOT SPECIFIED | NOT SPECIFIED | 18.6dB | 10μA | 110mA | LDMOS | 32V | 12.5W | |||||||||||||||||||||||||||
AFT20P060-4GNR3 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
10 Weeks | Tape & Reel (TR) | 2006 | Active | 3 (168 Hours) | EAR99 | ROHS3 Compliant | 65V | OM-780G-4L | 2.17GHz | 8541.29.00.40 | e3 | Matte Tin (Sn) | 260 | 40 | 18.9dB | 450mA | LDMOS (Dual) | 28V | 6.3W | |||||||||||||||||||||||||||
A2T08VD020NT1 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Tape & Reel (TR) | 2013 | Active | 3 (168 Hours) | EAR99 | ROHS3 Compliant | 105V | 24-QFN Exposed Pad | 728MHz~960MHz | 260 | NOT SPECIFIED | 19.1dB | 10μA | 40mA | LDMOS | 48V | 18W | ||||||||||||||||||||||||||||
AFT09MP055NR1 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
10 Weeks | Tape & Reel (TR) | 2013 | Active | 3 (168 Hours) | EAR99 | ROHS3 Compliant | 40V | TO-270AB | 870MHz | 8541.29.00.40 | e3 | Matte Tin (Sn) | 260 | 40 | 150°C | FET General Purpose Power | 15.7dB | N-CHANNEL | 625W | METAL-OXIDE SEMICONDUCTOR | 550mA | LDMOS | 12.5V | 1W | ||||||||||||||||||||||
MRF8HP21080HR3 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
10 Weeks | Tape & Reel (TR) | 2006 | Last Time Buy | Not Applicable | 4 | EAR99 | ROHS3 Compliant | 65V | NI780-4 | 2.17GHz | ENHANCEMENT MODE | 8541.29.00.75 | FLAT | 260 | 40 | MRF8HP21080 | YES | R-CDFM-F4 | 225°C | FET General Purpose Power | Not Qualified | 14.4dB | 2 | COMMON SOURCE, 2 ELEMENTS | SOURCE | N-CHANNEL | AMPLIFIER | 65V | METAL-OXIDE SEMICONDUCTOR | SILICON | 150mA | LDMOS (Dual) | 28V | 16W | ||||||||||||
MMRF2005GNR1 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | EAR99 | ROHS3 Compliant | 8542.33.00.01 | e3 | Tin (Sn) | NARROW BAND HIGH POWER | ||||||||||||||||||||||||||||||||||||
A2T18S166W12SR3 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
10 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 28V | NI-780-2S2L | 1.805GHz~1.995GHz | NOT SPECIFIED | NOT SPECIFIED | LDMOS | 38W | |||||||||||||||||||||||||||||||||||
MRF24301HR5 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
10 Weeks | Active | SOT-957A | 2.4GHz~2.5GHz | 13.5dB | LDMOS | 300W | ||||||||||||||||||||||||||||||||||||||||
A2T23H160-24SR3 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Tape & Reel (TR) | 2006 | Active | Not Applicable | EAR99 | ROHS3 Compliant | 65V | NI-780S-4L2L | 2.3GHz | 8541.29.00.75 | 17.7dB | 350mA | LDMOS (Dual) | 28V | 28W | ||||||||||||||||||||||||||||||
A2T09VD250NR1 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Tape & Reel (TR) | 2015 | Active | 3 (168 Hours) | EAR99 | ROHS3 Compliant | 105V | TO-270-6 Variant, Flat Leads | 920MHz | 8541.29.00.75 | 22.5dB | 1A | LDMOS (Dual) | 48V | 65W | ||||||||||||||||||||||||||||||
A3T21H360W23SR6 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Tape & Reel (TR) | 2006 | Active | Not Applicable | EAR99 | ROHS3 Compliant | 65V | ACP-1230S-4L2S | 2.11GHz~2.2GHz | 260 | 40 | 16.4dB | 10μA | 600mA | LDMOS (Dual) | 28V | 328W | ||||||||||||||||||||||||||||
MRF8S7235NR3 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
10 Weeks | Tape & Reel (TR) | 2006 | Not For New Designs | 3 (168 Hours) | EAR99 | ROHS3 Compliant | 70V | OM-780-2 | 728MHz | 8541.29.00.40 | e3 | Matte Tin (Sn) | 260 | 40 | 150°C | FET General Purpose Power | 20dB | Single | N-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 1.4A | LDMOS | 28V | 63W | ||||||||||||||||||||||
A3T21H400W23SR6 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Tape & Reel (TR) | Active | Not Applicable | ROHS3 Compliant | 260 | 40 | |||||||||||||||||||||||||||||||||||||||
A2T07D160W04SR3 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
10 Weeks | Tape & Reel (TR) | 2006 | Not For New Designs | Not Applicable | EAR99 | ROHS3 Compliant | 70V | NI-780S-4 | 803MHz | 8541.29.00.75 | 260 | 40 | 21.5dB | 450mA | LDMOS (Dual) | 28V | 30W | |||||||||||||||||||||||||||||
A3T18H408W24SR3 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Tape & Reel (TR) | Active | Not Applicable | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||
A2G26H280-04SR3 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
14 Weeks | Tape & Reel (TR) | Active | ||||||||||||||||||||||||||||||||||||||||||||
MRF6VP3091NBR5 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
10 Weeks | Tape & Reel (TR) | 2006 | Active | 3 (168 Hours) | 4 | EAR99 | ROHS3 Compliant | 115V | TO-272-4 | 860MHz | ENHANCEMENT MODE | 8541.29.00.75 | e3 | Matte Tin (Sn) | FLAT | 260 | 40 | MRF6VP3091 | YES | R-PDFM-F4 | 150°C | FET General Purpose Power | Not Qualified | 22dB | 2 | COMMON SOURCE, 2 ELEMENTS | SOURCE | N-CHANNEL | AMPLIFIER | 115V | METAL-OXIDE SEMICONDUCTOR | SILICON | 350mA | LDMOS (Dual) | 50V | 18W | ||||||||||
A2T23H200W23SR6 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Tape & Reel (TR) | 2006 | Active | Not Applicable | EAR99 | ROHS3 Compliant | 65V | ACP-1230S-4L2S | 2.3GHz~2.4GHz | 260 | 40 | 15.5dB | 10μA | 500mA | LDMOS | 28V | 51W | ||||||||||||||||||||||||||||
AFT20P140-4WGNR3 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
10 Weeks | Tape & Reel (TR) | 2006 | Not For New Designs | 3 (168 Hours) | EAR99 | ROHS3 Compliant | 65V | OM-780G-4L | 1.88GHz~1.91GHz | 8541.29.00.75 | e3 | TIN | 260 | 40 | 125°C | FET General Purpose Power | 17.8dB | Single | N-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 500mA | LDMOS (Dual) | 28V | 24W | ||||||||||||||||||||||
MRFE6VP6600GNR3 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Tape & Reel (TR) | 2009 | Active | 3 (168 Hours) | EAR99 | ROHS3 Compliant | 133V | OM-780G-4L | 230MHz | 8541.29.00.75 | NOT SPECIFIED | NOT SPECIFIED | 24.7dB | 100mA | LDMOS (Dual) | 50V | 600W | ||||||||||||||||||||||||||||
AFT26P100-4WGSR3 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
10 Weeks | Tape & Reel (TR) | 2006 | Not For New Designs | Not Applicable | EAR99 | ROHS3 Compliant | 8541.29.00.75 | 260 | 40 | |||||||||||||||||||||||||||||||||||||
MRF7S18125BHSR3 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 2008 | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 65V | NI-780S | 1.93GHz | MRF7S18125 | 16.5dB | 1.1A | LDMOS | 28V | 125W | ||||||||||||||||||||||||||||||||
MRF8S18120HSR5 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 2006 | Discontinued | 3 (168 Hours) | ROHS3 Compliant | 65V | NI-780S | 1.81GHz | MRF8S18120 | 18.2dB | 800mA | LDMOS | 28V | 72W | ||||||||||||||||||||||||||||||||
MRF8S21200HSR6 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Tape & Reel (TR) | 2010 | Obsolete | 3 (168 Hours) | 4 | EAR99 | ROHS3 Compliant | 65V | NI-1230S | 2.14GHz | ENHANCEMENT MODE | 8541.29.00.75 | FLAT | 260 | 40 | MRF8S21200 | YES | R-CDFP-F4 | 225°C | FET General Purpose Power | Not Qualified | 18.1dB | 2 | COMMON SOURCE, 2 ELEMENTS | SOURCE | N-CHANNEL | AMPLIFIER | 65V | METAL-OXIDE SEMICONDUCTOR | SILICON | 1.4A | LDMOS (Dual) | 28V | 48W | |||||||||||
MRFG35010AR1 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 2009 | Obsolete | 1 (Unlimited) | EAR99 | ROHS3 Compliant | 15V | NI-360HF | 3.55GHz | MRFG35010 | 10dB | 140mA | pHEMT FET | 12V | 1W | |||||||||||||||||||||||||||||||
MRF9045NR1 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 2008 | Obsolete | 3 (168 Hours) | 2 | 5A991 | Non-RoHS Compliant | 65V | TO-270AA | 945MHz | ENHANCEMENT MODE | 8541.29.00.75 | e3 | Matte Tin (Sn) | DUAL | FLAT | 260 | 40 | MRF9045 | YES | R-PDFP-F2 | 200°C | Not Qualified | 19dB | 1 | SINGLE | SOURCE | N-CHANNEL | AMPLIFIER | 65V | METAL-OXIDE SEMICONDUCTOR | SILICON | 350mA | LDMOS | 28V | 45W | ||||||||||
MRF6S24140HS | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | Bulk | 2012 | Obsolete | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | 68V | NI-880S | 2.39GHz | ENHANCEMENT MODE | 8541.29.00.75 | DUAL | FLAT | 260 | 40 | MRF6S24140 | YES | R-CDFP-F2 | 225°C | FET General Purpose Power | Not Qualified | 15.2dB | 1 | SINGLE | SOURCE | N-CHANNEL | 68V | METAL-OXIDE SEMICONDUCTOR | SILICON | 1.3A | LDMOS | 28V | 28W | ||||||||||||
MRF7S19170HR3 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 2009 | Obsolete | 1 (Unlimited) | EAR99 | ROHS3 Compliant | 65V | NI-880 | 1.99GHz | 8541.29.00.75 | MRF7S19170 | 17.2dB | 1.4A | LDMOS | 28V | 50W | ||||||||||||||||||||||||||||||
MRF18085ALSR5 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 2011 | Obsolete | 1 (Unlimited) | ROHS3 Compliant | 65V | NI-780S | 1.81GHz~1.88GHz | 15dB | 800mA | LDMOS | 26V | 85W |
Products