All Products
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Integrated Circuits (ICs)
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Connectors
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Discrete Semiconductors
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Capacitors
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RF/IF & RFID
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Microsemi Corporation(6096)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Lifecycle Status | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Reach Compliance Code | Height | Width | Mounting Type | Weight | Voltage - Rated DC | Technology | Capacitance | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Surface Mount | JESD-30 Code | Operating Temperature (Max) | Subcategory | Qualification Status | Reference Standard | Diode Element Material | Number of Elements | Configuration | Diode Type | Output Current-Max | Application | Number of Phases | Rep Pk Reverse Voltage-Max | JEDEC-95 Code | Output Current | Polarity | Forward Current | Forward Voltage | Case Connection | Max Surge Current | Element Configuration | Speed | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Operating Temperature - Junction | Max Reverse Voltage (DC) | Average Rectified Current | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Max Forward Surge Current (Ifsm) | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Reverse Current-Max | Natural Thermal Resistance | Reverse Recovery Time | Power Dissipation-Max | Reverse Voltage (DC) | Recovery Time | Forward Voltage-Max | Capacitance @ Vr, F | Max Junction Temperature (Tj) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| APT30DQ60KG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 27 Weeks | IN PRODUCTION (Last Updated: 2 weeks ago) | Through Hole | Tube | 1997 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -55°C | 10.26mm | RoHS Compliant | Lead Free | Tin | 30A | No | TO-220-2 | 9.19mm | 4.72mm | Through Hole | 6.000006g | 600V | AVALANCHE | 8541.10.00.80 | APT30DQ60 | 3 | R-PSFM-T2 | Rectifier Diodes | SILICON | 1 | Standard | ULTRA FAST SOFT RECOVERY | 1 | 30A | 30A | 2V | CATHODE | 320A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 25μA @ 600V | 2.4V @ 30A | -55°C~175°C | 600V | 30A | 25μA | 600V | 320A | 30 ns | 600V | 19 ns | |||||||||||||||||||||||||||||||||
| 1N5616US | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 7 Weeks | IN PRODUCTION (Last Updated: 2 weeks ago) | Surface Mount | Bulk | 1997 | no | Active | 1 (Unlimited) | 2 | EAR99 | 200°C | -65°C | Non-RoHS Compliant | Lead, Tin | Yes | 2 | HIGH RELIABILITY | SQ-MELF, A | Surface Mount | AVALANCHE | 8541.10.00.80 | e0 | TIN LEAD | END | WRAP AROUND | NOT SPECIFIED | NOT SPECIFIED | 2 | Not Qualified | SILICON | 1 | Standard | 1A | 1.3V | ISOLATED | Single | Standard Recovery >500ns, > 200mA (Io) | 500nA @ 400V | 1.3V @ 3A | -65°C~200°C | 400V | 1A | 500nA | 400V | 30A | 2 μs | ||||||||||||||||||||||||||||||||||||||||
| APT15D60KG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 27 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | Through Hole | Tube | yes | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -55°C | 10.26mm | RoHS Compliant | Lead Free | Tin | 15A | No | TO-220-2 | 9.19mm | 4.72mm | Through Hole | 6.000006g | 600V | 8541.10.00.80 | APT15D60 | 3 | R-PSFM-T2 | Rectifier Diodes | SILICON | 1 | Standard | ULTRA FAST SOFT RECOVERY | 1 | TO-220AC | 15A | 15A | 1.6V | CATHODE | 110A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 250μA @ 600V | 1.8V @ 15A | -55°C~175°C | 600V | 15A | 250μA | 600V | 110A | 80 ns | 600V | 21 ns | ||||||||||||||||||||||||||||||||||
| APT40DQ120BG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 29 Weeks | IN PRODUCTION (Last Updated: 2 weeks ago) | Through Hole | Tube | 1997 | yes | Active | 1 (Unlimited) | 2 | 175°C | -55°C | RoHS Compliant | Lead Free | 40A | No | TO-247-2 | Through Hole | 1.2kV | 8541.10.00.80 | e1 | TIN SILVER COPPER | 3 | R-PSFM-T2 | Rectifier Diodes | SILICON | 1 | Standard | ULTRA FAST SOFT RECOVERY | 1 | 40A | 40A | 3.3V | CATHODE | Single | Fast Recovery =< 500ns, > 200mA (Io) | 100μA @ 1200V | 3.3V @ 40A | -55°C~175°C | 1.2kV | 40A | 100μA | 1.2kV | 210A | 1200V | 350 ns | |||||||||||||||||||||||||||||||||||||||||
| APT60DQ60BG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 25 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Tube | 1997 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -55°C | 21.46mm | RoHS Compliant | Lead Free | 60A | No | 3 | TO-247-2 | 5.31mm | 16.26mm | Through Hole | 6.500007g | 600V | AVALANCHE | 8541.10.00.80 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | R-PSFM-T2 | SILICON | 1 | Standard | ULTRA FAST SOFT RECOVERY | 1 | 60A | 60A | 2.4V | CATHODE | 600A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 25μA @ 600V | 2.4V @ 60A | -55°C~175°C | 600V | 60A | 25μA | 600V | 600A | 35 ns | 600V | 26 ns | |||||||||||||||||||||||||||||||||
| UPS120EE3/TR7 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 19 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Surface Mount | Tape & Reel (TR) | 1997 | Active | 1 (Unlimited) | 1 | EAR99 | 125°C | -55°C | RoHS Compliant | Lead Free | 1A | No | 2 | DO-216AA | Surface Mount | 20V | 8541.10.00.80 | e3 | Matte Tin (Sn) - annealed | GULL WING | UPS120 | 1 | S-PSSO-G1 | Rectifier Diodes | SILICON | 1 | Schottky | 1A | Standard | 1A | 455mV | CATHODE | Single | Fast Recovery =< 500ns, > 200mA (Io) | 10μA @ 20V | 530mV @ 1A | -55°C~125°C | 20V | 1A | 10μA | 20V | 50A | 50A | 20V | |||||||||||||||||||||||||||||||||||||||
| UES1002 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | 1996 | Active | Not Applicable | 2 | EAR99 | 175°C | -55°C | Non-RoHS Compliant | No | 2 | A, Axial | Through Hole | 8541.10.00.80 | e0 | TIN LEAD | END | WRAP AROUND | SILICON | 1 | Standard | 1A | 1A | 975mV | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 2μA @ 100V | 975mV @ 1A | -55°C~175°C | 100V | 1A | 2μA | 100V | 30A | 25 ns | |||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N5190 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | 1997 | Military, MIL-PRF-19500/424 | Active | 1 (Unlimited) | 2 | 175°C | -65°C | Non-RoHS Compliant | No | B, Axial | Through Hole | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier | WIRE | 1N5190 | 2 | O-XALF-W2 | Qualified | MIL-19500/424A | SILICON | 1 | Standard | 3A | FAST RECOVERY POWER | 1 | 3A | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 2μA @ 600V | 1.5V @ 9A | 600V | 3A | 2μA | 600V | 80A | 400 ns | ||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N5711UR-1 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Surface Mount | Bulk | 1997 | Military, MIL-PRF-19500/444 | no | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -65°C | Non-RoHS Compliant | Contains Lead | No | 2 | METALLURGICALLY BONDED | DO-213AA | Surface Mount | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | 2 | Qualified | MIL-19500/444 | SILICON | 1 | Schottky | 0.033A | 33mA | 1V | ISOLATED | Single | Small Signal =< 200mA (Io), Any Speed | 200nA @ 100V | 1V @ 15mA | -65°C~150°C | 70V | 33mA | 70V | 2pF @ 0V 1MHz | ||||||||||||||||||||||||||||||||||||||||||
| 1N5806US | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 7 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Surface Mount | Bulk | 1997 | no | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | Non-RoHS Compliant | Contains Lead | Lead, Tin | Yes | 2 | HIGH RELIABILITY | SQ-MELF, A | not_compliant | 2.62mm | Surface Mount | AVALANCHE | 25pF | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier | END | WRAP AROUND | NOT SPECIFIED | NOT SPECIFIED | 2 | SILICON | 1 | Standard | 1A | 1A | 975mV | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 1μA @ 150V | 875mV @ 1A | -65°C~175°C | 150V | 1A | 1μA | 150V | 35A | 35A | 25 ns | 25pF @ 10V 1MHz | 175°C | |||||||||||||||||||||||||||||||||
| JANTX1N3614 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | 1997 | Military, MIL-PRF-19500/228 | no | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | Non-RoHS Compliant | Contains Lead | No | 2 | HIGH RELIABILITY | A, Axial | Through Hole | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | 2 | Qualified | MIL-19500 | SILICON | 1 | Standard | 1A | DO-41 | 1.1V | ISOLATED | Single | Standard Recovery >500ns, > 200mA (Io) | 1μA @ 800V | 1.1V @ 1A | -65°C~175°C | 800V | 1A | 1μA | 800V | 30A | ||||||||||||||||||||||||||||||||||||||||||
| JAN1N5819-1 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | 1997 | Military, MIL-PRF-19500/586 | no | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -55°C | Non-RoHS Compliant | Lead, Tin | No | 2 | METALLURGICALLY BONDED | DO-204AL, DO-41, Axial | Through Hole | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | 2 | Qualified | MIL-19500/586 | SILICON | 1 | Schottky | 1A | 45V | 1A | 850mV | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 50μA @ 45V | 490mV @ 1A | -65°C~150°C | 1nA | 40V | 50A | 45V | |||||||||||||||||||||||||||||||||||||||||||
| JAN1N5554 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | Through Hole | Bulk | Military, MIL-PRF-19500/420 | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | Non-RoHS Compliant | Contains Lead | No | 2 | HIGH RELIABILITY | B, Axial | Through Hole | AVALANCHE | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | 2 | Rectifier Diodes | Qualified | MIL-19500 | SILICON | 1 | Standard | 3A | GENERAL PURPOSE | 1 | 5A | 1.3V | ISOLATED | Single | Standard Recovery >500ns, > 200mA (Io) | 1μA @ 1000V | 1.3V @ 9A | -65°C~175°C | 1kV | 3A | 1μA | 1kV | 100A | 1000V | 2 μs | ||||||||||||||||||||||||||||||||||||||
| JANTX1N5712-1 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Bulk | 1997 | Military, MIL-PRF-19500/444 | no | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -65°C | Non-RoHS Compliant | Contains Lead | No | 2 | METALLURGICALLY BONDED | DO-204AH, DO-35, Axial | Through Hole | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | WIRE | 2 | Qualified | MIL-19500/444 | SILICON | 1 | Schottky | 0.075A | 16V | 75mA | 1V | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 150nA @ 16V | 1V @ 35mA | -65°C~150°C | 20V | 750mA | 2pF @ 0V 1MHz | ||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N5809US | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Surface Mount | Bulk | 1997 | Military, MIL-PRF-19500/477 | no | Active | 1 (Unlimited) | 2 | 175°C | -65°C | Non-RoHS Compliant | Contains Lead | No | 2 | HIGH RELIABILITY, METALLURGICALLY BONDED | SQ-MELF, B | Surface Mount | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | 2 | Qualified | MIL-19500 | SILICON | 1 | Standard | 3A | ULTRA FAST RECOVERY | 1 | 875mV | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 5μA @ 100V | 875mV @ 4A | -65°C~175°C | 100V | 3A | 125A | 30 ns | 5W | 60pF @ 10V 1MHz | ||||||||||||||||||||||||||||||||||||||||
| 1N6623 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 17 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | no | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -65°C | Non-RoHS Compliant | Lead, Tin | 2 | HIGH RELIABILITY | A, Axial | Through Hole | AVALANCHE | 8541.10.00.80 | e0 | TIN LEAD | WIRE | NOT SPECIFIED | NOT SPECIFIED | 2 | Rectifier Diodes | Not Qualified | SILICON | 1 | Standard | 1A | 1A | 1.8V | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 500nA @ 880V | 1.55V @ 1A | -65°C~150°C | 880V | 1A | 880V | 20A | 50 ns | 10pF @ 10V 1MHz | |||||||||||||||||||||||||||||||||||||||||
| JANTX1N5618US | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Surface Mount | Bulk | 1997 | Military, MIL-PRF-19500/427 | no | Active | 1 (Unlimited) | 2 | EAR99 | 200°C | -65°C | Non-RoHS Compliant | Contains Lead | No | 2 | METALLURGICALLY BONDED | SQ-MELF, A | Surface Mount | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | 2 | Qualified | SILICON | 1 | Standard | 1A | 1.3V | ISOLATED | Single | Standard Recovery >500ns, > 200mA (Io) | 500nA @ 600V | 1.3V @ 3A | -65°C~200°C | 600V | 1A | 500nA | 600V | 30A | 2 μs | ||||||||||||||||||||||||||||||||||||||||||
| 1N6627 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 17 Weeks | IN PRODUCTION (Last Updated: 2 weeks ago) | Through Hole | Bulk | 1997 | Active | 1 (Unlimited) | 2 | 150°C | -65°C | Non-RoHS Compliant | Yes | 2 | METALLURGICALLY BONDED, HIGH RELIABILITY | A, Axial | Through Hole | AVALANCHE | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | NOT SPECIFIED | NOT SPECIFIED | 2 | Not Qualified | SILICON | 1 | Standard | ULTRA FAST RECOVERY | 1 | 1.75A | 1.5V | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 2μA @ 440V | 1.35V @ 2A | -65°C~150°C | 440V | 1.75A | 2μA | 440V | 75A | 30 ns | 40pF @ 10V 1MHz | |||||||||||||||||||||||||||||||||||||||||
| JANTX1N5419 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Bulk | 1997 | Military, MIL-PRF-19500/411 | Active | 1 (Unlimited) | 2 | 175°C | -65°C | Non-RoHS Compliant | Yes | 2 | B, Axial | not_compliant | Through Hole | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | NOT SPECIFIED | NOT SPECIFIED | 2 | Qualified | MIL-19500/411L | SILICON | 1 | Standard | 3A | FAST RECOVERY POWER | 1 | 1.5V | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 1μA @ 500V | 1.5V @ 9A | -65°C~175°C | 500V | 3A | 1μA | 500V | 80A | 250 ns | ||||||||||||||||||||||||||||||||||||||||||
| UES2604R | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Bulk | 1996 | no | Active | Not Applicable | 2 | 150°C | -55°C | Non-RoHS Compliant | Lead Free | No | 3 | 8541.10.00.80 | e0 | TIN LEAD | BOTTOM | PIN/PEG | 2 | O-MBFM-P2 | Rectifier Diodes | SILICON | 2 | RECTIFIER DIODE | ULTRA FAST RECOVERY | 1 | 30A | Common Cathode | 50μA | 200V | 300A | 50 ns | 1.25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N3957 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | Military, MIL-PRF-19500/228 | no | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | Non-RoHS Compliant | No | 2 | HIGH RELIABILITY | A, Axial | Through Hole | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | 2 | Qualified | MIL-19500 | SILICON | 1 | Standard | 1A | DO-41 | 1.1V | ISOLATED | Single | Standard Recovery >500ns, > 200mA (Io) | 1μA @ 1000V | 1.1V @ 1A | -65°C~175°C | 1kV | 1A | 1μA | 1kV | 30A | 1000V | |||||||||||||||||||||||||||||||||||||||||||
| CDLL5712 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Surface Mount | Bulk | 1997 | no | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -65°C | Non-RoHS Compliant | No | 2 | METALLURGICALLY BONDED | DO-213AA | Surface Mount | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | 2 | SILICON | 1 | Schottky | 0.075A | 75mA | 1V | ISOLATED | Single | Small Signal =< 200mA (Io), Any Speed | 150nA @ 16V | 1V @ 35mA | -65°C~150°C | 20V | 75mA | 20V | 250 °C/W | 2pF @ 0V 1MHz | |||||||||||||||||||||||||||||||||||||||||||||
| 1N6622US | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 17 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Surface Mount | Bulk | 1997 | no | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -65°C | Non-RoHS Compliant | Contains Lead | Lead, Tin | Yes | 2 | HIGH RELIABILITY | SQ-MELF, A | not_compliant | Surface Mount | AVALANCHE | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | NOT SPECIFIED | NOT SPECIFIED | 2 | Not Qualified | SILICON | 1 | Standard | ULTRA FAST RECOVERY | 1 | 1.2A | 1.6V | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 500nA @ 660V | 1.4V @ 1.2A | -65°C~150°C | 660V | 1.2A | 500nA | 660V | 20A | 13 °C/W | 30 ns | 10pF @ 10V 1MHz | ||||||||||||||||||||||||||||||||||
| JANTXV1N5806US | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Surface Mount | Bulk | 1997 | Military, MIL-PRF-19500/477 | Active | 1 (Unlimited) | 2 | 175°C | -65°C | Non-RoHS Compliant | No | 2 | SQ-MELF, A | Surface Mount | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | 2 | Qualified | MIL-19500/477F | SILICON | 1 | Standard | ULTRA FAST RECOVERY POWER | 1 | 2.5A | 975mV | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 1μA @ 150V | 875mV @ 1A | -65°C~175°C | 150V | 1A | 1μA | 150V | 35A | 25 ns | 25pF @ 10V 1MHz | ||||||||||||||||||||||||||||||||||||||||||
| JANTX1N5188 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | IN PRODUCTION (Last Updated: 4 weeks ago) | Through Hole | Bulk | 1997 | Military, MIL-PRF-19500/424 | Active | 1 (Unlimited) | 2 | 175°C | -65°C | Non-RoHS Compliant | Contains Lead | No | 2 | B, Axial | Through Hole | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier | WIRE | 2 | Qualified | SILICON | 1 | Standard | 3A | FAST RECOVERY POWER | 1 | 3A | 1.5V | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 2μA @ 400V | 1.5V @ 9A | -65°C~175°C | 400V | 3A | 2μA | 400V | 80A | 250 ns | |||||||||||||||||||||||||||||||||||||||||||
| 1N6620US | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 17 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Surface Mount | Bulk | 1997 | no | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -65°C | Non-RoHS Compliant | Lead, Tin | 2 | HIGH RELIABILITY | SQ-MELF, A | not_compliant | Surface Mount | AVALANCHE | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | NOT SPECIFIED | NOT SPECIFIED | 2 | Not Qualified | SILICON | 1 | Standard | ULTRA FAST RECOVERY | 1 | 1.2A | 1.6V | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 500nA @ 220V | 1.4V @ 1.2A | -65°C~150°C | 220V | 1.2A | 220V | 20A | 0.5μA | 13 °C/W | 30 ns | 10pF @ 10V 1MHz | ||||||||||||||||||||||||||||||||||||
| JANTXV1N5811US | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Bulk | 1997 | Military, MIL-PRF-19500/477 | no | Active | 1 (Unlimited) | 2 | 175°C | -65°C | Non-RoHS Compliant | Contains Lead | No | 2 | HIGH RELIABILITY, METALLURGICALLY BONDED | SQ-MELF, B | Surface Mount | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | 2 | Qualified | MIL-19500 | SILICON | 1 | Standard | 3A | ULTRA FAST RECOVERY | 1 | 6A | 875mV | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 5μA @ 150V | 875mV @ 4A | -65°C~175°C | 150V | 3A | 5μA | 150V | 125A | 30 ns | 5W | 60pF @ 10V 1MHz | ||||||||||||||||||||||||||||||||||||||
| JANTX1N5802 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Bulk | 1997 | Military, MIL-PRF-19500/477 | no | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | Non-RoHS Compliant | No | 2 | HIGH RELIABILITY | A, Axial | Through Hole | AVALANCHE | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | Qualified | MIL-19500 | SILICON | 1 | Standard | 1A | 1 | 975mV | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 1μA @ 50V | 875mV @ 1A | -65°C~175°C | 50V | 1A | 1μA | 50V | 35A | 25 ns | 25pF @ 10V 1MHz | ||||||||||||||||||||||||||||||||||||||||||
| UFR7015 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Stud | Bulk | 1997 | no | Active | 1 | EAR99 | 175°C | -65°C | Non-RoHS Compliant | Lead Free | No | 2 | HIGH RELIABILITY | 8541.10.00.80 | e0 | TIN LEAD | UPPER | SOLDER LUG | 1 | O-MUPM-D1 | Rectifier Diodes | SILICON | 1 | RECTIFIER DIODE | FAST RECOVERY | 1 | 70A | CATHODE | Single | 25μA | 150V | 1kA | 50 ns | 0.975V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5184 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 7 Weeks | Bulk | 1997 | no | Discontinued | 1 (Unlimited) | 2 | EAR99 | Non-RoHS Compliant | HIGH RELIABILITY | S, Axial | not_compliant | Through Hole | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | WIRE | NO | O-LALF-W2 | 175°C | SILICON | 1 | SINGLE | Standard | 0.1A | 10000V | ISOLATED | Small Signal =< 200mA (Io), Any Speed | 5μA @ 10000V | 10V @ 100mA | -65°C~175°C | 10000V | 100mA | 1.5W |