All Products
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Integrated Circuits (ICs)
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Connectors
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Discrete Semiconductors
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RF/IF & RFID
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Microsemi Corporation(6096)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Lifecycle Status | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Height | Width | Mounting Type | Weight | Voltage - Rated DC | Technology | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | JESD-30 Code | Subcategory | Qualification Status | Reference Standard | Diode Element Material | Number of Elements | Diode Type | Output Current-Max | Application | Number of Phases | JEDEC-95 Code | Output Current | Polarity | Forward Current | Forward Voltage | Case Connection | Max Surge Current | Element Configuration | Speed | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Operating Temperature - Junction | Max Reverse Voltage (DC) | Average Rectified Current | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Natural Thermal Resistance | Reverse Recovery Time | Power Dissipation-Max | Reverse Voltage (DC) | Recovery Time | Capacitance @ Vr, F |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 1N4454-1 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 17 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | 1999 | no | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -55°C | Non-RoHS Compliant | No | 2 | METALLURGICALLY BONDED | DO-204AH, DO-35, Axial | Through Hole | 8541.10.00.70 | e0 | TIN LEAD | WIRE | SILICON | 1 | Standard | 200mA | 1V | ISOLATED | Single | Small Signal =< 200mA (Io), Any Speed | 100nA @ 50V | 1V @ 10mA | -65°C~175°C | 75V | 200mA | 100nA | 50V | 4A | 4 ns | 0.5W | ||||||||||||||||||||||||||||||||||||
| APT30DQ100KG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 27 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Tube | 1997 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -55°C | RoHS Compliant | Lead Free | 30A | No | TO-220-2 | Through Hole | 1kV | 8541.10.00.80 | e3 | PURE MATTE TIN | 3 | R-PSFM-T2 | Rectifier Diodes | SILICON | 1 | Standard | ULTRA FAST SOFT RECOVERY | 1 | TO-220AC | 30A | 30A | 3V | CATHODE | Single | Fast Recovery =< 500ns, > 200mA (Io) | 100μA @ 1000V | 3V @ 30A | -55°C~175°C | 1kV | 30A | 100μA | 1kV | 150A | 1000V | 295 ns | |||||||||||||||||||||||||||||
| LSM315JE3/TR13 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Surface Mount | Tape & Reel (TR) | 1997 | yes | Active | 1 (Unlimited) | RoHS Compliant | No | 2 | DO-214AB, SMC | Surface Mount | LSM315 | Schottky | Fast Recovery =< 500ns, > 200mA (Io) | 2mA @ 15V | 320mV @ 3A | -55°C~125°C | 15V | 3A | 15V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N4153UR-1 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 6 Weeks | Surface Mount | Bulk | 1999 | no | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | Non-RoHS Compliant | No | 2 | METALLURGICALLY BONDED | DO-213AA | Surface Mount | 8541.10.00.70 | e0 | TIN LEAD | END | WRAP AROUND | 2 | SILICON | 1 | Standard | 0.15A | 150mA | 880mV | ISOLATED | Single | Small Signal =< 200mA (Io), Any Speed | 50nA @ 50V | -65°C~175°C | 50V | 150mA | 50nA | 50V | 2A | 4 ns | 2pF @ 0V 1MHz | |||||||||||||||||||||||||||||||||||
| APT30DQ120KG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 31 Weeks | IN PRODUCTION (Last Updated: 2 weeks ago) | Through Hole | Tube | 1997 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -55°C | RoHS Compliant | Lead Free | 30A | No | TO-220-3 | Through Hole | 1.2kV | 8541.10.00.80 | e3 | PURE MATTE TIN | 3 | R-PSFM-T2 | Rectifier Diodes | SILICON | 1 | Standard | ULTRA FAST SOFT RECOVERY | 1 | TO-220AC | 30A | 30A | 3.3V | CATHODE | Single | Fast Recovery =< 500ns, > 200mA (Io) | 100μA @ 1200V | 3.3V @ 30A | -55°C~175°C | 1.2kV | 30A | 100μA | 1.2kV | 210A | 1200V | 320 ns | |||||||||||||||||||||||||||||
| JAN1N4249 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | 1997 | Military, MIL-PRF-19500/286 | Active | 1 (Unlimited) | EAR99 | 175°C | -65°C | Non-RoHS Compliant | No | 2 | A, Axial | Through Hole | 2 | Qualified | Standard | 1.3V | Single | Standard Recovery >500ns, > 200mA (Io) | 1μA @ 1000V | 1.3V @ 3A | -65°C~175°C | 1kV | 1A | 1μA | 1kV | 25A | 1000V | 5 μs | ||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N4944 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | Through Hole | Bulk | 1997 | Military, MIL-PRF-19500/359 | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | Non-RoHS Compliant | No | 2 | METALLURGICALLY BONDED | A, Axial | Through Hole | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | 2 | Qualified | MIL-19500/359F | SILICON | 1 | Standard | 1A | 1.3V | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 1μA @ 400V | 1.3V @ 1A | -65°C~175°C | 400V | 1A | 1μA | 400V | 15A | 150 ns | ||||||||||||||||||||||||||||||||||
| CDLL5817 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Bulk | 1997 | no | Active | 1 (Unlimited) | 2 | EAR99 | 125°C | -55°C | Non-RoHS Compliant | No | 2 | METALLURGICALLY BONDED | DO-213AB, MELF | Surface Mount | 8541.10.00.80 | e0 | TIN LEAD | END | WRAP AROUND | 2 | SILICON | 1 | Schottky | 1A | 1A | 900mV | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 100μA @ 20V | 600mV @ 1A | -55°C~125°C | 20V | 1A | 100μA | 20V | 40 °C/W | ||||||||||||||||||||||||||||||||||||
| JAN1N5804 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | IN PRODUCTION (Last Updated: 2 weeks ago) | Through Hole | Bulk | 1997 | Military, MIL-PRF-19500/477 | no | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | Non-RoHS Compliant | Contains Lead | No | 2 | HIGH RELIABILITY | A, Axial | Through Hole | AVALANCHE | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | Rectifier Diodes | Qualified | MIL-19500 | SILICON | 1 | Standard | ULTRA FAST RECOVERY POWER | 1 | 975mV | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 1μA @ 100V | 975mV @ 2.5A | -65°C~175°C | 100V | 2.5A | 1μA | 100V | 35A | 25 ns | 3W | 25pF @ 10V 1MHz | ||||||||||||||||||||||||||||
| JAN1N5809 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | IN PRODUCTION (Last Updated: 2 weeks ago) | Through Hole | Bulk | 1997 | Military, MIL-PRF-19500/477 | no | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | Non-RoHS Compliant | No | 2 | HIGH RELIABILITY, METALLURGICALLY BONDED | B, Axial | Through Hole | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier | WIRE | 2 | Rectifier Diodes | Qualified | MIL-19500 | SILICON | 1 | Standard | 6A | ULTRA FAST RECOVERY POWER | 1 | 6A | 875mV | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 5μA @ 100V | 875mV @ 4A | -65°C~175°C | 100V | 6A | 5μA | 100V | 125A | 30 ns | 5W | 60pF @ 10V 1MHz | |||||||||||||||||||||||||||
| JAN1N5806US | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | Surface Mount | Bulk | 1997 | Military, MIL-PRF-19500/477 | Active | 1 (Unlimited) | 2 | 175°C | -65°C | Non-RoHS Compliant | No | 2 | SQ-MELF, A | Surface Mount | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier | END | WRAP AROUND | Qualified | MIL-19500/477F | SILICON | 1 | Standard | ULTRA FAST RECOVERY POWER | 1 | 975mV | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 1μA @ 150V | 975mV @ 2.5A | -65°C~175°C | 150V | 2.5A | 1μA | 150V | 35A | 25 ns | 25pF @ 10V 1MHz | ||||||||||||||||||||||||||||||||||
| 1N5620US | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 7 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Surface Mount | Bulk | 1997 | no | Active | 1 (Unlimited) | 2 | EAR99 | 200°C | -65°C | Non-RoHS Compliant | Lead, Tin | Yes | 2 | HIGH RELIABILITY | SQ-MELF, A | Surface Mount | AVALANCHE | 8541.10.00.80 | e0 | TIN LEAD | END | WRAP AROUND | NOT SPECIFIED | NOT SPECIFIED | 2 | Rectifier Diodes | Not Qualified | SILICON | 1 | Standard | 1A | 1.3V | ISOLATED | Single | Standard Recovery >500ns, > 200mA (Io) | 500nA @ 800V | 1.3V @ 3A | -65°C~200°C | 800V | 1A | 500nA | 800V | 30A | 2 μs | |||||||||||||||||||||||||||||
| JANTX1N6642U | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Surface Mount | Bulk | 1996 | Military, MIL-PRF-19500/578 | no | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | Non-RoHS Compliant | No | 2 | METALLURGICALLY BONDED | SQ-MELF, B | Surface Mount | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | 2 | Qualified | MIL-19500/578E | SILICON | 1 | Standard | 0.3A | 300mA | 1.2V | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 500nA @ 75V | 1.2V @ 100mA | -65°C~175°C | 75V | 300mA | 500nA | 75V | 2.5A | 20 ns | 0.75W | 5pF @ 0V 1MHz | |||||||||||||||||||||||||||||
| APT60S20SG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | Surface Mount | Tube | 1997 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -55°C | 16.05mm | RoHS Compliant | Lead Free | 75A | No | 3 | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 5.08mm | 13.99mm | Surface Mount | 260.39037mg | 200V | 8541.10.00.80 | e3 | PURE MATTE TIN | GULL WING | 245 | 30 | 3 | R-PSSO-G2 | Rectifier Diodes | SILICON | 1 | Schottky | HIGH VOLTAGE ULTRA FAST SOFT RECOVERY | 1 | 75A | Standard | 75A | 900mV | CATHODE | 600A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 200V | 900mV @ 60A | -55°C~150°C | 200V | 75A | 1mA | 200V | 600A | 55 ns | 200V | 55 ns | |||||||||||||||||||
| JAN1N5620 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | IN PRODUCTION (Last Updated: 2 weeks ago) | Through Hole | Bulk | 1997 | Military, MIL-PRF-19500/427 | no | Active | 1 (Unlimited) | 2 | EAR99 | 200°C | -55°C | Non-RoHS Compliant | No | 2 | HIGH RELIABILITY | A, Axial | Through Hole | AVALANCHE | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | 2 | Qualified | MIL-19500 | SILICON | 1 | Standard | 1A | 1.3V | ISOLATED | Single | Standard Recovery >500ns, > 200mA (Io) | 500nA @ 800V | 1.3V @ 3A | -65°C~200°C | 800V | 1A | 500nA | 800V | 30A | 2 μs | ||||||||||||||||||||||||||||||||
| JAN1N4248 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | 1997 | Military, MIL-PRF-19500/286 | no | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -55°C | Non-RoHS Compliant | No | 2 | HIGH RELIABILITY | A, Axial | Through Hole | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | 2 | Qualified | MIL-19500 | SILICON | 1 | Standard | 1A | 1.3V | ISOLATED | Single | Standard Recovery >500ns, > 200mA (Io) | 1μA @ 800V | 1.3V @ 3A | -65°C~175°C | 800V | 1A | 1μA | 800V | 25A | 5 μs | |||||||||||||||||||||||||||||||||
| JANTX1N3613 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | Through Hole | Bulk | 1997 | Military, MIL-PRF-19500/228 | no | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -55°C | Non-RoHS Compliant | Contains Lead | No | 2 | HIGH RELIABILITY | A, Axial | Through Hole | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | 2 | Qualified | MIL-19500 | SILICON | 1 | Standard | 1A | 1.1V | ISOLATED | Single | Standard Recovery >500ns, > 200mA (Io) | 1μA @ 600V | 1.1V @ 1A | -65°C~175°C | 600V | 1A | 30A | 38 °C/W | ||||||||||||||||||||||||||||||||||
| 1N3595UR-1 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 6 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | Surface Mount | Bulk | 1997 | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | Non-RoHS Compliant | No | 2 | METALLURGICALLY BONDED | DO-213AA | Surface Mount | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | Rectifier Diodes | SILICON | 1 | Standard | 0.15A | 150mA | 1V | ISOLATED | Single | Small Signal =< 200mA (Io), Any Speed | 1nA @ 125V | 1V @ 200mA | -65°C~175°C | 125V | 150mA | 1nA | 125V | 4A | 150mA DC | 3 μs | 0.5W | |||||||||||||||||||||||||||||||||
| JANTX1N5614 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | Through Hole | Bulk | 1997 | Military, MIL-PRF-19500/427 | Active | 1 (Unlimited) | 200°C | -65°C | Non-RoHS Compliant | Contains Lead | Yes | 2 | A, Axial | Through Hole | Standard | 1A | 1.3V | Single | Standard Recovery >500ns, > 200mA (Io) | 500nA @ 200V | 1.3V @ 3A | -65°C~200°C | 200V | 1A | 1μA | 200V | 30A | 200V | 1A | 2 μs | ||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N5552 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | 1997 | Military, MIL-PRF-19500/420 | Active | 1 (Unlimited) | 2 | 175°C | -65°C | Non-RoHS Compliant | Contains Lead | No | 2 | B, Axial | Through Hole | AVALANCHE | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | 2 | Qualified | SILICON | 1 | Standard | 5A | POWER | 1 | 5A | 1.2V | ISOLATED | Single | Standard Recovery >500ns, > 200mA (Io) | 1μA @ 600V | 1.2V @ 9A | -65°C~175°C | 600V | 5A | 1μA | 600V | 100A | 2 μs | ||||||||||||||||||||||||||||||||
| JAN1N5711-1 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 11 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | 1997 | Military, MIL-PRF-19500/444 | no | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -65°C | Non-RoHS Compliant | No | 2 | METALLURGICALLY BONDED | DO-204AH, DO-35, Axial | Through Hole | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | WIRE | 2 | Qualified | MIL-19500/444 | SILICON | 1 | Schottky | 0.033A | 33mA | 1V | ISOLATED | Single | Small Signal =< 200mA (Io), Any Speed | 200nA @ 70V | 1V @ 15mA | -65°C~150°C | 70V | 2pF @ 0V 1MHz | ||||||||||||||||||||||||||||||||||||
| JAN1N4944 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | IN PRODUCTION (Last Updated: 2 weeks ago) | Through Hole | Bulk | 1997 | Military, MIL-PRF-19500/360 | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | Non-RoHS Compliant | Contains Lead | No | 2 | METALLURGICALLY BONDED | A, Axial | Through Hole | AVALANCHE | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | Qualified | MIL-19500 | SILICON | 1 | Standard | 1A | 1.3V | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 1μA @ 400V | 1.3V @ 1A | -65°C~175°C | 400V | 1A | 1μA | 400V | 15A | 150 ns | |||||||||||||||||||||||||||||||||
| JAN1N5806 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | IN PRODUCTION (Last Updated: 2 weeks ago) | Through Hole | Bulk | 1997 | Military, MIL-PRF-19500/477 | no | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | Non-RoHS Compliant | Contains Lead | No | 2 | HIGH RELIABILITY | A, Axial | Through Hole | AVALANCHE | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier | WIRE | Qualified | MIL-19500 | SILICON | 1 | Standard | 1A | 1 | 975mV | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 1μA @ 150V | 975mV @ 2.5A | -65°C~175°C | 150V | 2.5A | 1μA | 150V | 35A | 25 ns | 3W | 25pF @ 10V 1MHz | |||||||||||||||||||||||||||||
| APT60DQ120BG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 29 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Tube | 1997 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -55°C | 21.46mm | RoHS Compliant | Lead Free | 60A | No | TO-247-2 | 5.31mm | 16.26mm | Through Hole | 6.500007g | 1.2kV | 8541.10.00.80 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | R-PSFM-T2 | Rectifier Diodes | SILICON | 1 | Standard | ULTRA FAST SOFT RECOVERY | 1 | 60A | 60A | 3.35V | CATHODE | 540A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 100μA @ 1200V | 3.3V @ 60A | -55°C~175°C | 1.2kV | 60A | 100μA | 1.2kV | 540A | 1200V | 320 ns | 1.2kV | 320 ns | |||||||||||||||||||||||
| APT30D40BG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 25 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | Through Hole | Tube | 1997 | yes | Active | 1 (Unlimited) | 2 | 175°C | -55°C | 21.46mm | RoHS Compliant | Lead Free | 30A | No | TO-247-2 | 5.31mm | 16.26mm | Through Hole | 6.500007g | 400V | 8541.10.00.80 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | R-PSFM-T2 | SILICON | 1 | Standard | ULTRA FAST SOFT RECOVERY | 1 | 30A | 30A | 1.5V | CATHODE | 320A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 250μA @ 400V | 1.5V @ 30A | -55°C~175°C | 400V | 30A | 250μA | 400V | 320A | 32 ns | 400V | 22 ns | |||||||||||||||||||||||||||
| CDLL2810 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 17 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Surface Mount | Bulk | 1997 | no | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -65°C | Non-RoHS Compliant | No | 2 | METALLURGICALLY BONDED | DO-213AA | Surface Mount | 8541.10.00.70 | e0 | TIN LEAD | END | WRAP AROUND | 2 | SILICON | 1 | Schottky | 0.075A | 75mA | 1V | ISOLATED | Single | Small Signal =< 200mA (Io), Any Speed | 100nA @ 15V | 1V @ 35mA | -65°C~150°C | 20V | 75mA | 20V | 250 °C/W | 2pF @ 0V 1MHz | |||||||||||||||||||||||||||||||||||
| HSM880J/TR13 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Surface Mount | Tape & Reel (TR) | 1997 | no | Active | 1 (Unlimited) | 175°C | -55°C | Non-RoHS Compliant | No | 2 | DO-214AB, SMC | Surface Mount | e0 | Tin/Lead (Sn/Pb) | HSM880 | Schottky | 8A | 780mV | Single | Fast Recovery =< 500ns, > 200mA (Io) | 500μA @ 80V | 780mV @ 8A | -55°C~175°C | 80V | 8A | 500μA | 80V | 300A | |||||||||||||||||||||||||||||||||||||||||||||
| APT15D100KG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 27 Weeks | Through Hole | Tube | yes | Active | 1 (Unlimited) | 2 | 175°C | -55°C | 10.26mm | RoHS Compliant | Lead Free | Tin | 15A | No | TO-220-3 | 9.19mm | 4.72mm | Through Hole | 6.000006g | 1kV | 8541.10.00.80 | APT15D100 | 3 | R-PSFM-T2 | Rectifier Diodes | SILICON | 1 | Standard | ULTRA FAST SOFT RECOVERY | 1 | TO-220AC | 15A | 15A | 2.3V | CATHODE | 80A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 250μA @ 1000V | 2.3V @ 15A | -55°C~175°C | 1kV | 15A | 250μA | 1kV | 80A | 1000V | 260 ns | 1kV | 260 ns | |||||||||||||||||||||||||
| JAN1N4153-1 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | Military, MIL-PRF-19500/337 | no | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | Non-RoHS Compliant | No | 2 | METALLURGICALLY BONDED | DO-204AH, DO-35, Axial | Through Hole | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | WIRE | Qualified | MIL-19500/337 | SILICON | 1 | Standard | 150mA | 880mV | ISOLATED | Single | Small Signal =< 200mA (Io), Any Speed | 50nA @ 50V | 880mV @ 20mA | -65°C~175°C | 75V | 2A | 150mA DC | 4 ns | 2pF @ 0V 1MHz | ||||||||||||||||||||||||||||||||||||
| JAN1N914 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | Through Hole | Bulk | 1999 | Military, MIL-PRF-19500/116 | no | Active | 1 (Unlimited) | EAR99 | 175°C | -65°C | Non-RoHS Compliant | Contains Lead | No | 2 | DO-204AH, DO-35, Axial | Through Hole | e0 | Tin/Lead (Sn/Pb) | Qualified | SILICON | 1 | Standard | 0.075A | 1.2V | Single | Small Signal =< 200mA (Io), Any Speed | 500nA @ 75V | 1.2V @ 50mA | -65°C~150°C | 500nA | 75V | 2A | 200mA | 5 ns | 2.8pF @ 1.5V 1MHz |