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RF/IF & RFID
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Microsemi Corporation(6096)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Lifecycle Status | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Reach Compliance Code | Height | Width | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Surface Mount | JESD-30 Code | Operating Temperature (Max) | Subcategory | Qualification Status | Reference Standard | Diode Element Material | Number of Elements | Configuration | Diode Type | Output Current-Max | Application | Number of Phases | Rep Pk Reverse Voltage-Max | JEDEC-95 Code | Output Current | Forward Current | Forward Voltage | Case Connection | Max Surge Current | Element Configuration | Speed | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Operating Temperature - Junction | Max Reverse Voltage (DC) | Average Rectified Current | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Natural Thermal Resistance | Reverse Recovery Time | Power Dissipation-Max | Reverse Voltage (DC) | Recovery Time | Capacitance @ Vr, F | Voltage - Peak Reverse (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MSDM50-18 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
22 Weeks | Chassis Mount, Screw | Bulk | 2011 | Obsolete | 1 (Unlimited) | 5 | RoHS Compliant | No | 5 | Module | Chassis Mount | -40°C~150°C TJ | Standard | UPPER | UNSPECIFIED | 5 | SILICON | 1 | Three Phase | 3 | 50A | 1.8V | ISOLATED | Single | 300μA @ 1800V | 1.8V @ 150A | 300μA | 800V | 460A | 1.8kV | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| 679-1 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | Screw | Bulk | no | Obsolete | 1 (Unlimited) | 4 | EAR99 | Non-RoHS Compliant | No | 4 | 4-Square, NB | Surface Mount | -65°C~150°C TJ | Standard | e0 | TIN LEAD | UPPER | SOLDER LUG | SILICON | 4 | Single Phase | 1 | 25A | ISOLATED | Single | 20μA @ 100V | 1.2V @ 10A | 10μA | 100V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5618US | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 7 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Surface Mount | Bulk | 1997 | no | Active | 1 (Unlimited) | 2 | EAR99 | 200°C | -65°C | Non-RoHS Compliant | Yes | 2 | HIGH RELIABILITY | SQ-MELF, A | Surface Mount | AVALANCHE | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | NOT SPECIFIED | NOT SPECIFIED | 2 | Rectifier Diodes | Not Qualified | SILICON | 1 | Standard | 1A | 1.3V | ISOLATED | Single | Standard Recovery >500ns, > 200mA (Io) | 500nA @ 600V | 1.3V @ 3A | -65°C~200°C | 600V | 1A | 500nA | 600V | 30A | 2 μs | ||||||||||||||||||||||||||||||||||||
| 1N5420 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 7 Weeks | IN PRODUCTION (Last Updated: 2 weeks ago) | Through Hole | Bulk | 1997 | no | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | Non-RoHS Compliant | Yes | 2 | HIGH RELIABILITY | B, Axial | not_compliant | Through Hole | AVALANCHE | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | NOT SPECIFIED | NOT SPECIFIED | 2 | Not Qualified | SILICON | 1 | Standard | 3A | 1 | 1.5V | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 1μA @ 600V | 1.5V @ 9A | -65°C~175°C | 600V | 3A | 1μA | 600V | 80A | 400 ns | ||||||||||||||||||||||||||||||||||||
| 1N5550 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 7 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | 1997 | no | Active | 1 (Unlimited) | 2 | 175°C | -65°C | Non-RoHS Compliant | Contains Lead | Yes | 2 | HIGH RELIABILITY | B, Axial | not_compliant | Through Hole | AVALANCHE | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | NOT SPECIFIED | NOT SPECIFIED | 2 | SILICON | 1 | Standard | 3A | GENERAL PURPOSE | 1 | 5A | 1.2V | ISOLATED | Single | Standard Recovery >500ns, > 200mA (Io) | 1μA @ 200V | 1.2V @ 9A | -65°C~175°C | 200V | 3A | 1μA | 200V | 100A | 2 μs | |||||||||||||||||||||||||||||||||||
| JAN1N4454UR-1 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Surface Mount | Bulk | 1999 | Military, MIL-PRF-19500/144 | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -55°C | Non-RoHS Compliant | Contains Lead | No | 2 | METALLURGICALLY BONDED | DO-213AA | Surface Mount | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | 2 | Qualified | SILICON | 1 | Standard | 200mA | 1V | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 100nA @ 50V | 1V @ 10mA | -55°C~175°C | 50V | 4A | 100nA | 50V | 4A | 200mA DC | 44 ns | ||||||||||||||||||||||||||||||||||||||
| JAN1N5617 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | Military, MIL-PRF-19500/429 | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | Non-RoHS Compliant | No | 2 | A, Axial | Through Hole | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | 2 | Qualified | SILICON | 1 | Standard | 1A | 1.6V | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 500nA @ 400V | 1.6V @ 3A | -65°C~175°C | 400V | 1A | 500nA | 400V | 30A | 150 ns | |||||||||||||||||||||||||||||||||||||||||||
| JANTX1N5615 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | 1997 | Military, MIL-PRF-19500/429 | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -55°C | Non-RoHS Compliant | Contains Lead | 1A | No | 2 | A, Axial | Through Hole | 200V | AVALANCHE | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | 1N5615 | 2 | Qualified | SILICON | 1 | Standard | 1A | 1.6V | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 500nA @ 200V | 1.6V @ 3A | -65°C~175°C | 200V | 1A | 500nA | 200V | 30A | 150 ns | 45pF @ 12V 1MHz | ||||||||||||||||||||||||||||||||||||
| JANTXV1N5617 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | IN PRODUCTION (Last Updated: 4 weeks ago) | Through Hole | Bulk | 1997 | Military, MIL-PRF-19500/427 | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | Non-RoHS Compliant | No | 2 | A, Axial | Through Hole | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | 2 | Qualified | SILICON | 1 | Standard | 1A | DO-7 | 1.6V | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 500nA @ 400V | 1.6V @ 3A | -65°C~175°C | 400V | 1A | 500nA | 400V | 30A | 150 ns | 35pF @ 12V 1MHz | ||||||||||||||||||||||||||||||||||||||||
| JANTX1N3644 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | 1997 | Military, MIL-PRF-19500/279 | no | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | Non-RoHS Compliant | No | 2 | METALLURGICALLY BONDED, HIGH RELIABILITY | S, Axial | Through Hole | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | WIRE | Qualified | SILICON | 1 | Standard | 5V | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 5μA @ 1500V | 5V @ 250mA | -65°C~175°C | 5μA | 1.5kV | 14A | 1500V | 250mA | |||||||||||||||||||||||||||||||||||||||||||
| JANTX1N6642 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | Through Hole | Bulk | 1997 | Military, MIL-PRF-19500/578 | no | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | Non-RoHS Compliant | Contains Lead | No | 2 | METALLURGICALLY BONDED | DO-204AH, DO-35, Axial | Through Hole | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | WIRE | 2 | Qualified | MIL-19500/578E | SILICON | 1 | Standard | 0.3A | 1.2V | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 500nA @ 75V | 1.2V @ 100mA | -65°C~175°C | 75V | 300mA | 500nA | 100V | 2.5A | 20 ns | 0.75W | 5pF @ 0V 1MHz | ||||||||||||||||||||||||||||||||||||
| CDLL5711 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Surface Mount | Bulk | 1997 | no | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -65°C | Non-RoHS Compliant | Contains Lead | No | 2 | METALLURGICALLY BONDED | DO-213AA | Surface Mount | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | 2 | SILICON | 1 | Schottky | 0.033A | 33mA | 1V | ISOLATED | Single | Small Signal =< 200mA (Io), Any Speed | 200nA @ 50V | 410mV @ 1mA | -65°C~150°C | 50V | 33mA | 200nA | 70V | 250 °C/W | 2pF @ 0V 1MHz | |||||||||||||||||||||||||||||||||||||||
| APT15DQ60BG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 25 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Tube | yes | Active | 1 (Unlimited) | 2 | 175°C | -55°C | 21.46mm | RoHS Compliant | Lead Free | 15A | No | TO-247-3 | 5.31mm | 16.26mm | Through Hole | 6.500007g | 600V | 8541.10.00.80 | e1 | TIN SILVER COPPER | 3 | R-PSFM-T2 | Rectifier Diodes | SILICON | 1 | Standard | ULTRA FAST SOFT RECOVERY | 1 | 15A | 15A | 2V | CATHODE | 110A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 25μA @ 600V | 2.4V @ 15A | -55°C~175°C | 600V | 15A | 25μA | 600V | 110A | 19 ns | 600V | 15 ns | ||||||||||||||||||||||||||||||||
| APT30D30BG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 25 Weeks | IN PRODUCTION (Last Updated: 2 weeks ago) | Through Hole | Tube | 1997 | yes | Active | 1 (Unlimited) | 2 | 175°C | -55°C | 21.46mm | RoHS Compliant | Lead Free | 30A | No | TO-247-2 | 5.31mm | 16.26mm | Through Hole | 6.500007g | 300V | 8541.10.00.80 | e1 | TIN SILVER COPPER | 3 | R-PSFM-T2 | Rectifier Diodes | SILICON | 1 | Standard | ULTRA FAST SOFT RECOVERY | 1 | TO-247AD | 30A | 30A | 1.2V | CATHODE | 320A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 250μA @ 300V | 1.4V @ 30A | -55°C~175°C | 300V | 30A | 250μA | 300V | 320A | 25 ns | 300V | 25 ns | ||||||||||||||||||||||||||||||
| 1N3957 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 7 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Bulk | 1997 | no | Discontinued | 1 (Unlimited) | 2 | EAR99 | Non-RoHS Compliant | HIGH RELIABILITY | A, Axial | Through Hole | 8541.10.00.80 | e0 | TIN LEAD | WIRE | NOT SPECIFIED | NOT SPECIFIED | NO | O-LALF-W2 | 175°C | SILICON | 1 | SINGLE | Standard | 1A | 1000V | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | 1μA @ 1000V | 1.1V @ 1A | -65°C~175°C | 1000V | 1A | |||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N5419 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | 1997 | Military, MIL-PRF-19500/411 | Discontinued | 1 (Unlimited) | 2 | 175°C | -65°C | Non-RoHS Compliant | Contains Lead | No | 2 | B, Axial | Through Hole | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | 2 | Qualified | MIL-19500/411L | SILICON | 1 | Standard | 3A | FAST RECOVERY POWER | 1 | 1.5V | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 1μA @ 500V | 1.5V @ 9A | -65°C~175°C | 500V | 3A | 1μA | 500V | 80A | 150 ns | |||||||||||||||||||||||||||||||||||||||
| JANTXV1N6627 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | 1997 | Military, MIL-PRF-19500/590 | no | Discontinued | 1 (Unlimited) | 2 | 150°C | -65°C | Non-RoHS Compliant | No | 2 | METALLURGICALLY BONDED, HIGH RELIABILITY | E, Axial | Through Hole | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | 2 | Qualified | MIL-19500/590 | SILICON | 1 | Standard | ULTRA FAST RECOVERY | 1 | 1.75A | 1.5V | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 2μA @ 440V | 1.35V @ 2A | -65°C~150°C | 440V | 1.75A | 2μA | 440V | 75A | 30 ns | 40pF @ 10V 1MHz | ||||||||||||||||||||||||||||||||||||||
| MSD130-16 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 22 Weeks | Chassis Mount, Screw | Bulk | 2009 | Obsolete | 1 (Unlimited) | 5 | EAR99 | RoHS Compliant | Lead Free | No | 5 | M3 | Chassis Mount | -40°C~150°C TJ | Standard | e0 | TIN LEAD | UPPER | UNSPECIFIED | 5 | SILICON | 1 | Three Phase | 3 | 130A | 1.8V | ISOLATED | Single | 300μA @ 1600V | 1.8V @ 300A | 130A | 300μA | 1.6kV | 1.2kA | |||||||||||||||||||||||||||||||||||||||||||||||
| APT30DF60HJ | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 36 Weeks | IN PRODUCTION (Last Updated: 2 weeks ago) | Chassis Mount, Screw | Bulk | 2009 | Active | 1 (Unlimited) | 4 | 38.2mm | RoHS Compliant | No | 4 | SOT-227-4, miniBLOC | 9.6mm | 25.2mm | Chassis Mount | 30.000004g | -55°C~175°C TJ | Standard | UPPER | UNSPECIFIED | 4 | Bridge Rectifier Diodes | SILICON | 1 | Single Phase | 60A | 1 | 30A | 1.8V | ISOLATED | 320A | Single | 250μA @ 600V | 2.2V @ 30A | 250μA | 600V | 320A | 60A | 600V | ||||||||||||||||||||||||||||||||||||||||||
| APT40DR160HJ | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 36 Weeks | IN PRODUCTION (Last Updated: 2 weeks ago) | Chassis Mount, Screw | Bulk | 1997 | Active | 1 (Unlimited) | 4 | 38.2mm | RoHS Compliant | No | 4 | SOT-227-4, miniBLOC | 9.6mm | 25.2mm | Chassis Mount | 30.000004g | -55°C~150°C TJ | Standard | UPPER | UNSPECIFIED | 4 | Bridge Rectifier Diodes | SILICON | 1 | Single Phase | 1 | 40A | 1.3V | ISOLATED | 400A | Single | 20μA @ 1600V | 1.3V @ 40A | 1.6kV | 400A | 1.6kV | |||||||||||||||||||||||||||||||||||||||||||||
| 1N5711-1 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | 1997 | no | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -65°C | Non-RoHS Compliant | Lead, Tin | No | 2 | METALLURGICALLY BONDED | DO-204AH, DO-35, Axial | Through Hole | 8541.10.00.70 | e0 | TIN LEAD | WIRE | MIL-19500/444 | SILICON | 1 | Schottky | 0.033A | 15A | 1V | ISOLATED | Single | Small Signal =< 200mA (Io), Any Speed | 200nA @ 50V | 1V @ 15mA | -65°C~150°C | 70V | 33mA | 70V | 2pF @ 0V 1MHz | ||||||||||||||||||||||||||||||||||||||||||
| 1N5553 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 7 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | Through Hole | Bulk | 1997 | no | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | Non-RoHS Compliant | Contains Lead | Lead, Tin | Yes | 2 | HIGH RELIABILITY | B, Axial | Through Hole | AVALANCHE | 8541.10.00.80 | e0 | TIN LEAD | WIRE | NOT SPECIFIED | NOT SPECIFIED | 2 | Not Qualified | SILICON | 1 | Standard | 5A | GENERAL PURPOSE | 1 | 5A | 1.3V | ISOLATED | Single | Standard Recovery >500ns, > 200mA (Io) | 1μA @ 800V | 1.2V @ 9A | -65°C~175°C | 800V | 3A | 1μA | 800V | 100A | 2 μs | |||||||||||||||||||||||||||||||||
| APT15DQ60KG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 27 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Tube | 1997 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -55°C | 10.26mm | RoHS Compliant | Lead Free | 15A | No | TO-220-2 | 9.19mm | 4.72mm | Through Hole | 6.000006g | 600V | AVALANCHE | 8541.10.00.80 | Pure Matte Tin (Sn) | 3 | R-PSFM-T2 | Rectifier Diodes | SILICON | 1 | Standard | ULTRA FAST SOFT RECOVERY | 1 | TO-220AC | 15A | 15A | 2V | CATHODE | 110A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 25μA @ 600V | 2.4V @ 15A | -55°C~175°C | 600V | 15A | 25μA | 600V | 110A | 19 ns | 600V | 15 ns | |||||||||||||||||||||||||||||
| APT30DQ100BG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 25 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Tube | 1997 | yes | Active | 1 (Unlimited) | 2 | 175°C | -55°C | RoHS Compliant | Lead Free | 30A | No | TO-247-2 | Through Hole | 1kV | 8541.10.00.80 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | R-PSFM-T2 | Rectifier Diodes | SILICON | 1 | Standard | ULTRA FAST SOFT RECOVERY | 1 | 30A | 30A | 3V | CATHODE | Single | Fast Recovery =< 500ns, > 200mA (Io) | 100μA @ 1000V | 3V @ 30A | -55°C~175°C | 1kV | 30A | 100μA | 1kV | 150A | 1000V | 295 ns | |||||||||||||||||||||||||||||||||||||
| 1N5553US | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 7 Weeks | IN PRODUCTION (Last Updated: 2 weeks ago) | Surface Mount | Bulk | 1997 | no | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | Non-RoHS Compliant | Yes | 2 | HIGH RELIABILITY | SQ-MELF, B | not_compliant | Surface Mount | AVALANCHE | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | NOT SPECIFIED | NOT SPECIFIED | 2 | Not Qualified | SILICON | 1 | Standard | 5A | POWER | 1 | 5A | 1.3V | ISOLATED | Single | Standard Recovery >500ns, > 200mA (Io) | 1μA @ 800V | 1.2V @ 9A | -65°C~175°C | 800V | 3A | 1μA | 800V | 100A | 2 μs | |||||||||||||||||||||||||||||||||
| JANTX1N4942 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | Through Hole | Bulk | 1996 | Military, MIL-PRF-19500/359 | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | Non-RoHS Compliant | Contains Lead | No | 2 | METALLURGICALLY BONDED | A, Axial | Through Hole | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | 2 | Qualified | MIL-19500/359F | SILICON | 1 | Standard | 1A | 1.3V | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 1μA @ 200V | 1.3V @ 1A | -65°C~175°C | 200V | 1A | 1μA | 200V | 15A | 150 ns | |||||||||||||||||||||||||||||||||||||||
| 1N5551US | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 7 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | Surface Mount | Bulk | 1997 | no | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | Non-RoHS Compliant | Contains Lead | Yes | 2 | HIGH RELIABILITY | SQ-MELF, B | Surface Mount | AVALANCHE | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | NOT SPECIFIED | NOT SPECIFIED | 2 | Not Qualified | SILICON | 1 | Standard | 5A | POWER | 1 | 5A | 1.2V | ISOLATED | Single | Standard Recovery >500ns, > 200mA (Io) | 1μA @ 400V | 1.2V @ 9A | -65°C~175°C | 400V | 3A | 1μA | 400V | 100A | 2 μs | |||||||||||||||||||||||||||||||||
| JAN1N5550 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | 1997 | Military, MIL-PRF-19500/420 | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | Non-RoHS Compliant | Contains Lead | No | 2 | B, Axial | Through Hole | AVALANCHE | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | Qualified | SILICON | 1 | Standard | 5A | POWER | 1 | 5A | 1.2V | ISOLATED | Single | Standard Recovery >500ns, > 200mA (Io) | 1μA @ 200V | 1.2V @ 9A | -65°C~175°C | 200V | 3A | 1μA | 200V | 100A | 2 μs | ||||||||||||||||||||||||||||||||||||||
| JAN1N4148-1 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | 1999 | Military, MIL-PRF-19500/116 | no | Active | 1 (Unlimited) | 2 | EAR99 | 200°C | -65°C | Non-RoHS Compliant | Contains Lead | No | 2 | DO-204AH, DO-35, Axial | Through Hole | 8541.10.00.50 | e0 | Tin/Lead (Sn/Pb) | WIRE | 2 | Rectifier Diodes | Qualified | MIL-19500/116L | SILICON | 1 | Standard | 200mA | 1.2V | ISOLATED | Single | Small Signal =< 200mA (Io), Any Speed | 500nA @ 75V | 1.2V @ 100mA | -65°C~175°C | 75V | 200mA | 500nA | 75V | 2A | 20 ns | 4pF @ 0V 1MHz | |||||||||||||||||||||||||||||||||||||
| JANTX1N5806US | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Surface Mount | Bulk | 1997 | Military, MIL-PRF-19500/477 | Active | 1 (Unlimited) | 2 | 175°C | -65°C | Non-RoHS Compliant | Contains Lead | No | 2 | SQ-MELF, A | Surface Mount | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | 2 | Qualified | MIL-19500/477F | SILICON | 1 | Standard | ULTRA FAST RECOVERY POWER | 1 | 2.5A | 975mV | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 1μA @ 150V | 875mV @ 1A | -65°C~175°C | 150V | 1A | 1μA | 150V | 35A | 25 ns | 25pF @ 10V 1MHz |