Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Lifecycle Status | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Reach Compliance Code | Height | Width | Impedance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Surface Mount | JESD-30 Code | Operating Temperature (Max) | Subcategory | Qualification Status | Max Power Dissipation | Power - Max | Reference Standard | Diode Element Material | Number of Elements | Configuration | Diode Type | Output Current-Max | Application | Number of Phases | Rep Pk Reverse Voltage-Max | JEDEC-95 Code | Non-rep Pk Forward Current-Max | Output Current | Polarity | Forward Current | Forward Voltage | Tolerance | Case Connection | Polarity/Channel Type | Element Configuration | Voltage Tolerance | Power Dissipation | Turn On Delay Time | Max Reverse Leakage Current | Test Current | Input | Speed | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Operating Temperature - Junction | Max Reverse Voltage (DC) | Average Rectified Current | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Diode Configuration | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Natural Thermal Resistance | Reverse Recovery Time | Power Dissipation-Max | Max Collector Current | Collector Emitter Breakdown Voltage | Collector Emitter Voltage (VCEO) | Capacitance @ Vr, F | Transistor Application | Zener Voltage | Turn-Off Delay Time | Transistor Element Material | Input Capacitance | Current - Collector Cutoff (Max) | Collector Emitter Saturation Voltage | Turn On Time | Vce(on) (Max) @ Vge, Ic | Turn Off Time-Nom (toff) | IGBT Type | NTC Thermistor | Gate-Emitter Voltage-Max | Input Capacitance (Cies) @ Vce | VCEsat-Max | Voltage - Collector Emitter Breakdown (Max) | Continuous Collector Current | Gate-Emitter Thr Voltage-Max | Reference Voltage | Voltage Tol-Max | Working Test Current | Impedance-Max |
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JANTXV1N5525B-1 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | 1999 | Military, MIL-PRF-19500/437 | no | Active | 1 (Unlimited) | 2 | EAR99 | Non-RoHS Compliant | No | 2 | METALLURGICALLY BONDED | DO-204AH, DO-35, Axial | Through Hole | -65°C~175°C | ZENER | 8541.10.00.50 | e0 | Tin/Lead (Sn/Pb) | WIRE | 2 | Qualified | 500mW | MIL-19500 | SILICON | 1 | ZENER DIODE | UNIDIRECTIONAL | ±5% | ISOLATED | Single | 1μA | 1μA @ 5V | 1.1V @ 200mA | 6.2V | 6.2V | 5% | 1mA | 30Ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
JANTX1N4963 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | Through Hole | Bulk | 1999 | Military, MIL-PRF-19500/356 | Active | 1 (Unlimited) | 2 | EAR99 | Non-RoHS Compliant | Contains Lead | No | 2 | E, Axial | 3.5Ohm | Through Hole | -65°C~175°C | ZENER | 8541.10.00.50 | e0 | Tin/Lead (Sn/Pb) | WIRE | 2 | Qualified | 5W | MIL-19500/356H | SILICON | 1 | ZENER DIODE | UNIDIRECTIONAL | ±5% | ISOLATED | Single | 5% | 5W | 5μA | 75mA | 5μA @ 12.2V | 1.5V @ 1A | 16V | 16V | 5% | 3.5Ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
JANTXV1N6660R | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Bulk | Military, MIL-PRF-19500/608 | Discontinued | 1 (Unlimited) | 3 | EAR99 | 150°C | -65°C | Non-RoHS Compliant | 3 | HIGH RELIABILITY, LOW POWER LOSS, FREE WHEELING DIODE | TO-254-3, TO-254AA (Straight Leads) | Through Hole | 8541.10.00.80 | PIN/PEG | 3 | Qualified | MIL | SILICON | 2 | Schottky | EFFICIENCY | 1 | 30A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 45V | 750mV @ 15A | -65°C~150°C | 45V | 1 Pair Common Cathode | 15A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1N5618US | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 7 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Surface Mount | Bulk | 1997 | no | Active | 1 (Unlimited) | 2 | EAR99 | 200°C | -65°C | Non-RoHS Compliant | Yes | 2 | HIGH RELIABILITY | SQ-MELF, A | Surface Mount | AVALANCHE | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | NOT SPECIFIED | NOT SPECIFIED | 2 | Rectifier Diodes | Not Qualified | SILICON | 1 | Standard | 1A | 1.3V | ISOLATED | Single | Standard Recovery >500ns, > 200mA (Io) | 500nA @ 600V | 1.3V @ 3A | -65°C~200°C | 600V | 1A | 500nA | 600V | 30A | 2 μs | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1N5420 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 7 Weeks | IN PRODUCTION (Last Updated: 2 weeks ago) | Through Hole | Bulk | 1997 | no | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | Non-RoHS Compliant | Yes | 2 | HIGH RELIABILITY | B, Axial | not_compliant | Through Hole | AVALANCHE | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | NOT SPECIFIED | NOT SPECIFIED | 2 | Not Qualified | SILICON | 1 | Standard | 3A | 1 | 1.5V | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 1μA @ 600V | 1.5V @ 9A | -65°C~175°C | 600V | 3A | 1μA | 600V | 80A | 400 ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1N5550 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 7 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | 1997 | no | Active | 1 (Unlimited) | 2 | 175°C | -65°C | Non-RoHS Compliant | Contains Lead | Yes | 2 | HIGH RELIABILITY | B, Axial | not_compliant | Through Hole | AVALANCHE | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | NOT SPECIFIED | NOT SPECIFIED | 2 | SILICON | 1 | Standard | 3A | GENERAL PURPOSE | 1 | 5A | 1.2V | ISOLATED | Single | Standard Recovery >500ns, > 200mA (Io) | 1μA @ 200V | 1.2V @ 9A | -65°C~175°C | 200V | 3A | 1μA | 200V | 100A | 2 μs | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
JAN1N4454UR-1 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Surface Mount | Bulk | 1999 | Military, MIL-PRF-19500/144 | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -55°C | Non-RoHS Compliant | Contains Lead | No | 2 | METALLURGICALLY BONDED | DO-213AA | Surface Mount | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | 2 | Qualified | SILICON | 1 | Standard | 200mA | 1V | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 100nA @ 50V | 1V @ 10mA | -55°C~175°C | 50V | 4A | 100nA | 50V | 4A | 200mA DC | 44 ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
JAN1N5617 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | Military, MIL-PRF-19500/429 | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | Non-RoHS Compliant | No | 2 | A, Axial | Through Hole | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | 2 | Qualified | SILICON | 1 | Standard | 1A | 1.6V | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 500nA @ 400V | 1.6V @ 3A | -65°C~175°C | 400V | 1A | 500nA | 400V | 30A | 150 ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
JANTX1N5615 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | 1997 | Military, MIL-PRF-19500/429 | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -55°C | Non-RoHS Compliant | Contains Lead | 1A | No | 2 | A, Axial | Through Hole | 200V | AVALANCHE | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | 1N5615 | 2 | Qualified | SILICON | 1 | Standard | 1A | 1.6V | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 500nA @ 200V | 1.6V @ 3A | -65°C~175°C | 200V | 1A | 500nA | 200V | 30A | 150 ns | 45pF @ 12V 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
JANTXV1N5617 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | IN PRODUCTION (Last Updated: 4 weeks ago) | Through Hole | Bulk | 1997 | Military, MIL-PRF-19500/427 | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | Non-RoHS Compliant | No | 2 | A, Axial | Through Hole | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | 2 | Qualified | SILICON | 1 | Standard | 1A | DO-7 | 1.6V | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 500nA @ 400V | 1.6V @ 3A | -65°C~175°C | 400V | 1A | 500nA | 400V | 30A | 150 ns | 35pF @ 12V 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
JANTX1N3644 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | 1997 | Military, MIL-PRF-19500/279 | no | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | Non-RoHS Compliant | No | 2 | METALLURGICALLY BONDED, HIGH RELIABILITY | S, Axial | Through Hole | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | WIRE | Qualified | SILICON | 1 | Standard | 5V | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 5μA @ 1500V | 5V @ 250mA | -65°C~175°C | 5μA | 1.5kV | 14A | 1500V | 250mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
JANTX1N6642 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | Through Hole | Bulk | 1997 | Military, MIL-PRF-19500/578 | no | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | Non-RoHS Compliant | Contains Lead | No | 2 | METALLURGICALLY BONDED | DO-204AH, DO-35, Axial | Through Hole | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | WIRE | 2 | Qualified | MIL-19500/578E | SILICON | 1 | Standard | 0.3A | 1.2V | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 500nA @ 75V | 1.2V @ 100mA | -65°C~175°C | 75V | 300mA | 500nA | 100V | 2.5A | 20 ns | 0.75W | 5pF @ 0V 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CDLL5711 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Surface Mount | Bulk | 1997 | no | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -65°C | Non-RoHS Compliant | Contains Lead | No | 2 | METALLURGICALLY BONDED | DO-213AA | Surface Mount | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | 2 | SILICON | 1 | Schottky | 0.033A | 33mA | 1V | ISOLATED | Single | Small Signal =< 200mA (Io), Any Speed | 200nA @ 50V | 410mV @ 1mA | -65°C~150°C | 50V | 33mA | 200nA | 70V | 250 °C/W | 2pF @ 0V 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT30D20BG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 25 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Tube | yes | Active | 1 (Unlimited) | 2 | 175°C | -55°C | RoHS Compliant | Lead Free | 30A | No | 2 | TO-247-2 | Through Hole | 200V | 8541.10.00.80 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | SILICON | 1 | Standard | ULTRA FAST SOFT RECOVERY | 1 | 30A | 30A | 1.3V | CATHODE | Single | Fast Recovery =< 500ns, > 200mA (Io) | 250μA @ 200V | 1.3V @ 30A | -55°C~175°C | 200V | 30A | 250μA | 200V | 320A | 24 ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
JAN1N4454-1 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | IN PRODUCTION (Last Updated: 4 weeks ago) | Through Hole | Bulk | 1998 | Military, MIL-PRF-19500/144 | no | Active | 1 (Unlimited) | 2 | EAR99 | 125°C | -55°C | Non-RoHS Compliant | Contains Lead | No | 2 | HIGH RELIABILITY | DO-204AH, DO-35, Axial | Through Hole | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | WIRE | Qualified | MIL-19500/144 | SILICON | 1 | Standard | 200mA | 1V | ISOLATED | Single | 500mW | Small Signal =< 200mA (Io), Any Speed | 100nA @ 50V | 1V @ 10mA | -55°C~175°C | 50V | 200mA | 100nA | 50V | 4A | 4 ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1N3957 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 7 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Bulk | 1997 | no | Discontinued | 1 (Unlimited) | 2 | EAR99 | Non-RoHS Compliant | HIGH RELIABILITY | A, Axial | Through Hole | 8541.10.00.80 | e0 | TIN LEAD | WIRE | NOT SPECIFIED | NOT SPECIFIED | NO | O-LALF-W2 | 175°C | SILICON | 1 | SINGLE | Standard | 1A | 1000V | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | 1μA @ 1000V | 1.1V @ 1A | -65°C~175°C | 1000V | 1A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
JANTXV1N5419 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | 1997 | Military, MIL-PRF-19500/411 | Discontinued | 1 (Unlimited) | 2 | 175°C | -65°C | Non-RoHS Compliant | Contains Lead | No | 2 | B, Axial | Through Hole | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | 2 | Qualified | MIL-19500/411L | SILICON | 1 | Standard | 3A | FAST RECOVERY POWER | 1 | 1.5V | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 1μA @ 500V | 1.5V @ 9A | -65°C~175°C | 500V | 3A | 1μA | 500V | 80A | 150 ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
JANTXV1N6627 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | 1997 | Military, MIL-PRF-19500/590 | no | Discontinued | 1 (Unlimited) | 2 | 150°C | -65°C | Non-RoHS Compliant | No | 2 | METALLURGICALLY BONDED, HIGH RELIABILITY | E, Axial | Through Hole | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | 2 | Qualified | MIL-19500/590 | SILICON | 1 | Standard | ULTRA FAST RECOVERY | 1 | 1.75A | 1.5V | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 2μA @ 440V | 1.35V @ 2A | -65°C~150°C | 440V | 1.75A | 2μA | 440V | 75A | 30 ns | 40pF @ 10V 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
JANTX1N3291 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | IN PRODUCTION (Last Updated: 3 weeks ago) | Stud | Bulk | 1997 | Military, MIL-PRF-19500/246 | no | Discontinued | 1 (Unlimited) | 1 | EAR99 | 200°C | -65°C | Non-RoHS Compliant | No | 2 | DO-205AA, DO-8, Stud | Chassis, Stud Mount | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | UPPER | HIGH CURRENT CABLE | 1 | O-MUPM-H1 | Qualified | SILICON | 1 | Standard | POWER | 1 | 100A | 1.55V | CATHODE | Single | Small Signal =< 200mA (Io), Any Speed | 10mA @ 400V | 1.55V @ 310A | -65°C~200°C | 10mA | 400V | 1.6kA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
JANTXV1N914 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 20 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | 1998 | Military, MIL-PRF-19500/116 | no | Discontinued | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | Non-RoHS Compliant | No | 2 | METALLURGICALLY BONDED | DO-204AH, DO-35, Axial | Through Hole | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | WIRE | Qualified | MIL-19500/116 | SILICON | 1 | Standard | 0.075A | 1A | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 500nA @ 75V | 1.2V @ 50mA | -65°C~175°C | 500nA | 75V | 2A | 200mA | 5 ns | 2.8pF @ 1.5V 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT100GT120JU2 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 36 Weeks | Chassis Mount, Screw | 2006 | yes | Active | 1 (Unlimited) | 4 | EAR99 | 38.2mm | RoHS Compliant | Lead Free | 4 | AVALANCHE RATED, LOW CONDUCTION LOSS | ISOTOP | 9.6mm | 25.4mm | Chassis Mount | 30.000004g | -55°C~150°C TJ | UPPER | UNSPECIFIED | 4 | Insulated Gate BIP Transistors | 480W | 480W | 1 | Single | ISOLATED | N-CHANNEL | Standard | 140A | 1.2kV | 1.2kV | POWER CONTROL | SILICON | 7.2nF | 5mA | 1.7V | 335 ns | 2.1V @ 15V, 100A | 610 ns | Trench Field Stop | No | 20V | 7.2nF @ 25V | 2.1 V | 1200V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT75GP120J | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 23 Weeks | Chassis Mount, Screw | 1999 | POWER MOS 7® | yes | Active | 1 (Unlimited) | 4 | EAR99 | 38.2mm | RoHS Compliant | Lead Free | 128A | 4 | ULTRA FAST, LOW CONDUCTION LOSS | ISOTOP | 9.6mm | 25.4mm | Chassis Mount | 30.000004g | -55°C~150°C TJ | 1.2kV | UPPER | UNSPECIFIED | 4 | 543W | 1 | Single | ISOLATED | N-CHANNEL | 20 ns | Standard | 128A | 1.2kV | 1.2kV | POWER CONTROL | 163 ns | SILICON | 7.04nF | 1mA | 3.3V | 60 ns | 3.9V @ 15V, 75A | 359 ns | PT | No | 7.04nF @ 25V | 1200V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APTGL475U120D4G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 36 Weeks | Chassis Mount, Screw | 2011 | Active | 1 (Unlimited) | 4 | EAR99 | RoHS Compliant | Lead Free | 4 | D4 | Chassis Mount | -40°C~175°C TJ | UPPER | UNSPECIFIED | 5 | Insulated Gate BIP Transistors | 2.082kW | 2082W | 1 | Single | ISOLATED | N-CHANNEL | 160 ns | Standard | 610A | 1.2kV | 1.2kV | POWER CONTROL | 340 ns | SILICON | 24.6nF | 4mA | 210 ns | 2.2V @ 15V, 400A | 620 ns | Trench Field Stop | No | 20V | 24.6nF @ 25V | 2.2 V | 1200V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APTGT300DU60G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 36 Weeks | Chassis Mount, Screw | 2006 | yes | Active | 1 (Unlimited) | 7 | EAR99 | RoHS Compliant | 7 | AVALANCHE RATED | SP6 | Chassis Mount | -40°C~175°C TJ | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | 7 | 1.15kW | 1150W | 2 | Dual, Common Source | ISOLATED | N-CHANNEL | Dual | Standard | 430A | 600V | 600V | POWER CONTROL | SILICON | 24nF | 350μA | 170 ns | 1.8V @ 15V, 300A | 320 ns | Trench Field Stop | No | 24nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT75GN120JDQ3 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 29 Weeks | Chassis Mount, Screw | 1999 | yes | Active | 1 (Unlimited) | 4 | EAR99 | 38.2mm | RoHS Compliant | 4 | HIGH RELIABILITY | ISOTOP | 9.6mm | 25.4mm | Chassis Mount | 30.000004g | -55°C~150°C TJ | UPPER | UNSPECIFIED | 4 | Insulated Gate BIP Transistors | 379W | 1 | Single | ISOLATED | N-CHANNEL | Standard | 124A | 1.2kV | 1.2kV | POWER CONTROL | SILICON | 4.8nF | 200μA | 1.7V | 101 ns | 2.1V @ 15V, 75A | 925 ns | Trench Field Stop | No | 30V | 4.8nF @ 25V | 1200V | 124A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT150GN60JDQ4 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 25 Weeks | Chassis Mount, Screw | 1999 | yes | Active | 1 (Unlimited) | 4 | EAR99 | 38.2mm | RoHS Compliant | Lead Free | 220A | 4 | HIGH RELIABILITY, UL RECOGNIZED | ISOTOP | 9.6mm | 25.4mm | Chassis Mount | 30.000004g | -55°C~175°C TJ | 600V | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | UPPER | UNSPECIFIED | 4 | Insulated Gate BIP Transistors | 536W | 1 | Single | ISOLATED | N-CHANNEL | 44 ns | Standard | 220A | 600V | 600V | POWER CONTROL | 430 ns | SILICON | 9.2nF | 50μA | 1.5V | 154 ns | 1.85V @ 15V, 150A | 575 ns | Trench Field Stop | No | 30V | 9.2nF @ 25V | 6.5V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT85GR120JD60 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Chassis Mount, Screw | 2001 | Active | 1 (Unlimited) | EAR99 | RoHS Compliant | Lead Free | 4 | SOT-227-4, miniBLOC | Chassis Mount | -55°C~150°C TJ | 543W | 543W | Single | Standard | 116A | 1.2kV | 1.2kV | 8.4nF | 1.1mA | 3.2V @ 15V, 85A | NPT | No | 8.4nF @ 25V | 1200V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT100GF60JU3 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | 2006 | yes | Obsolete | 1 (Unlimited) | 4 | EAR99 | 150°C | -55°C | 38.2mm | RoHS Compliant | 4 | AVALANCHE RATED | ISOTOP | 9.6mm | 25.4mm | Chassis Mount | 30.000004g | UPPER | UNSPECIFIED | 4 | Insulated Gate BIP Transistors | 416W | 1 | Single | ISOLATED | N-CHANNEL | Standard | 120A | 600V | 600V | POWER CONTROL | 4.3nF | 100μA | 2.1V | 51 ns | 2.5V @ 15V, 100A | 210 ns | NPT | No | 20V | 4.3nF @ 25V | 5V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APTGF180DA60TG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | 2006 | yes | Obsolete | 1 (Unlimited) | 12 | EAR99 | 150°C | -40°C | RoHS Compliant | 20 | SP4 | Chassis Mount | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 12 | R-XUFM-X12 | Insulated Gate BIP Transistors | Not Qualified | 833W | 1 | Single | ISOLATED | N-CHANNEL | Standard | 220A | 600V | 600V | MOTOR CONTROL | 8.6nF | 300μA | 51 ns | 2.5V @ 15V, 180A | 210 ns | NPT | Yes | 8.6nF @ 25V | 2.5 V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT50GF60JU3 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | 2006 | yes | Obsolete | 1 (Unlimited) | 4 | EAR99 | 150°C | -55°C | RoHS Compliant | 4 | AVALANCHE RATED | ISOTOP | Chassis Mount | UPPER | UNSPECIFIED | 4 | Insulated Gate BIP Transistors | 277W | 1 | Single | ISOLATED | N-CHANNEL | Standard | 75A | 600V | 600V | POWER CONTROL | 2.25nF | 40μA | 103 ns | 2.7V @ 15V, 50A | 450 ns | NPT | No | 20V | 2.25nF @ 25V | 2.7 V |
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