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IXYS(3783)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Length | RoHS Status | Lead Free | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Number of Drivers | Height | Width | Resistance | Mounting Type | Operating Temperature | Technology | Operating Mode | Nominal Supply Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Subcategory | Qualification Status | Output Voltage | Number of Elements | Configuration | JEDEC-95 Code | Number of Outputs | Output Current | Case Connection | Repetitive Peak Off-state Voltage | Leakage Current (Max) | Non-Repetitive Pk On-state Cur | Critical Rate of Rise of Off-State Voltage-Min | Holding Current-Max | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Supplier Device Package | Power Dissipation-Max | Continuous Drain Current (ID) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Trigger Device Type | Isolation Voltage | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Voltage - Off State | Current - On State (It (RMS)) (Max) | Current - Hold (Ih) (Max) | Voltage - Gate Trigger (Vgt) (Max) | Current - Non Rep. Surge 50, 60Hz (Itsm) | Current - Gate Trigger (Igt) (Max) | SCR Type | Voltage - On State (Vtm) (Max) | Current - Off State (Max) | Current - On State (It (AV)) (Max) | Circuit Commutated Turn-off Time-Nom |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| N3012ZC260 | IXYS | $0.00 |
Min: 1 Mult: 1 |
8 Weeks | Active | 1 (Unlimited) | ROHS3 Compliant | TO-200AF | Chassis Mount | -40°C~125°C | W13 | 2.6kV | 5922A | 1A | 3V | 49700A @ 50Hz | 300mA | Standard Recovery | 1.4V | 200mA | 3012A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| N1159NC380 | IXYS | $0.00 |
Min: 1 Mult: 1 |
8 Weeks | Active | 1 (Unlimited) | ROHS3 Compliant | TO-200AC, K-PUK | Chassis Mount | -40°C~125°C | W11 | 3.8kV | 2268A | 1A | 3V | 16100A @ 50Hz | 300mA | Standard Recovery | 3.08V | 100mA | 1159A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| N3565HA180 | IXYS | $0.00 |
Min: 1 Mult: 1 |
8 Weeks | Active | 1 (Unlimited) | ROHS3 Compliant | TO-200AF | Chassis Mount | -40°C~125°C | 1.8kV | 7050A | 1A | 3V | 50000A @ 50Hz | 300mA | Standard Recovery | 1.2V | 150mA | 3565A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| N3175HE160 | IXYS | $0.00 |
Min: 1 Mult: 1 |
8 Weeks | Active | 1 (Unlimited) | ROHS3 Compliant | TO-200AF | Chassis Mount | -40°C~125°C | 1.6kV | 6310A | 1A | 3V | 50000A @ 50Hz | 300mA | Standard Recovery | 1.2V | 150mA | 3175A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| K0900ME650 | IXYS | $0.00 |
Min: 1 Mult: 1 |
12 Weeks | Active | 1 (Unlimited) | ROHS3 Compliant | TO-200AC, K-PUK | Chassis Mount | -40°C~125°C | SCR | 6.5kV | 1980A | 1A | 3V | 14000A @ 50Hz | 300mA | Standard Recovery | 2.5V | 150mA | 1010A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| R0830LC12C | IXYS | $0.00 |
Min: 1 Mult: 1 |
8 Weeks | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | TO-200AB, B-PuK | Chassis Mount | -40°C~125°C | Silicon Controlled Rectifiers | 1200V | 70mA | 9350 A | 200V/us | 1000mA | SCR | 1.2kV | 1713A | 1A | 3V | 9350A @ 50Hz | 300mA | Standard Recovery | 2.4V | 70mA | 830A | 15 µs | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| K1010MA650 | IXYS | $0.00 |
Min: 1 Mult: 1 |
12 Weeks | Active | 1 (Unlimited) | ROHS3 Compliant | TO-200AC, K-PUK | Chassis Mount | -40°C~125°C | 6.5kV | 2210A | 1A | 3V | 14000A @ 50Hz | 300mA | Standard Recovery | 2.5V | 150mA | 1130A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| N4340TE220 | IXYS | $0.00 |
Min: 1 Mult: 1 |
8 Weeks | Active | 1 (Unlimited) | ROHS3 Compliant | TO-200AF | Chassis Mount | -40°C~125°C | 2.2kV | 8545A | 1A | 3V | 60500A @ 50Hz | 300mA | Standard Recovery | 2.12V | 200mA | 4340A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| N3790TE280 | IXYS | $0.00 |
Min: 1 Mult: 1 |
8 Weeks | Active | 1 (Unlimited) | ROHS3 Compliant | TO-200AF | Chassis Mount | -40°C~125°C | 2.8kV | 7410A | 1A | 3V | 55000A @ 50Hz | 300mA | Standard Recovery | 2.1V | 250mA | 3790A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| N3790TE240 | IXYS | $0.00 |
Min: 1 Mult: 1 |
8 Weeks | Active | 1 (Unlimited) | ROHS3 Compliant | TO-200AF | Chassis Mount | -40°C~125°C | W82 | 2.4kV | 7410A | 1A | 3V | 55000A @ 50Hz | 300mA | Standard Recovery | 2.1V | 250mA | 3790A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| N2543ZD300 | IXYS | $0.00 |
Min: 1 Mult: 1 |
8 Weeks | Active | 1 (Unlimited) | ROHS3 Compliant | TO-200AF | Chassis Mount | 3kV | 32000A @ 50Hz | Standard Recovery | 2543A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK320N17T2 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Through Hole | Tube | 2009 | GigaMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | No | AVALANCHE RATED | TO-264-3, TO-264AA | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 100A | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | 3 | R-PSFM-T3 | FET General Purpose Power | 170V | 1 | SINGLE WITH BUILT-IN DIODE | 1 | 320A | DRAIN | 46 ns | 1670W Tc | 320A | SWITCHING | 0.0052Ohm | 115 ns | SILICON | N-Channel | 5.2m Ω @ 60A, 10V | 5V @ 8mA | 45000pF @ 25V | 640nC @ 10V | 170ns | 230 ns | 320A Tc | 800A | 5000 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IXTY08N100P | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Surface Mount | Tube | 2009 | Polar™ | yes | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | No | AVALANCHE RATED | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | GULL WING | 4 | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 42W | 42W Tc | 800mA | SWITCHING | 35 ns | SILICON | N-Channel | 20 Ω @ 500mA, 10V | 4V @ 50μA | 240pF @ 25V | 11.3nC @ 10V | 37ns | 34 ns | 20V | 1kV | 0.8A | 800mA Tc | 1000V | 80 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IXTT6N120 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Surface Mount | Tube | 2004 | yes | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Lead Free | AVALANCHE RATED | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | not_compliant | 2.6MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSSO-G2 | Not Qualified | 1 | DRAIN | Single | 300W | 300W Tc | 6A | SWITCHING | 42 ns | SILICON | N-Channel | 2.6 Ω @ 3A, 10V | 5V @ 250μA | 1950pF @ 25V | 56nC @ 10V | 33ns | 18 ns | 20V | 1.2kV | 6A | 6A Tc | 1200V | 24A | 500 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IXFB82N60P | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Through Hole | Tube | 2006 | HiPerFET™, PolarHT™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | 3 | AVALANCHE RATED | TO-264-3, TO-264AA | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 1 | DRAIN | Single | 1.25kW | 1250W Tc | 82A | SWITCHING | 0.075Ohm | 79 ns | SILICON | N-Channel | 75m Ω @ 41A, 10V | 5V @ 8mA | 23000pF @ 25V | 240nC @ 10V | 23ns | 24 ns | 30V | 600V | 82A Tc | 200A | 5000 mJ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| IXFL100N50P | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Through Hole | Tube | 2006 | HiPerFET™, PolarHT™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | AVALANCHE RATED, UL RECOGNIZED | ISOPLUS264™ | No SVHC | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 1 | ISOLATED | Single | 625W | 5V | 625W Tc | 70A | SWITCHING | 0.052Ohm | 2.5kV | 110 ns | SILICON | N-Channel | 52m Ω @ 50A, 10V | 5V @ 8mA | 20000pF @ 25V | 240nC @ 10V | 29ns | 26 ns | 30V | 500V | 70A Tc | 250A | 5000 mJ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| IXFT16N120P | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tube | 2008 | HiPerFET™, PolarP2™ | yes | Active | 1 (Unlimited) | 2 | ROHS3 Compliant | Lead Free | AVALANCHE RATED | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | DRAIN | Single | 660W | 660W Tc | 16A | SWITCHING | 0.95Ohm | 66 ns | SILICON | N-Channel | 950m Ω @ 500mA, 10V | 6.5V @ 1mA | 6900pF @ 25V | 120nC @ 10V | 28ns | 35 ns | 30V | 1.2kV | 16A Tc | 1200V | 35A | 800 mJ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| IXFN110N85X | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 19 Weeks | Tube | 2016 | HiPerFET™ | yes | Active | Not Applicable | ROHS3 Compliant | SOT-227-4, miniBLOC | unknown | Chassis Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | 1170W Tc | N-Channel | 33m Ω @ 55A, 10V | 5.5V @ 8mA | 17000pF @ 25V | 425nC @ 10V | 110A Tc | 850V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTT48P20P | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Surface Mount | Tube | 2008 | PolarP™ | yes | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Lead Free | No | AVALANCHE RATED | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 85MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | PURE TIN | GULL WING | 4 | R-PSSO-G2 | Other Transistors | 1 | DRAIN | Single | 462W | 462W Tc | 48A | SWITCHING | 67 ns | SILICON | P-Channel | 85m Ω @ 24A, 10V | 4.5V @ 250μA | 5400pF @ 25V | 103nC @ 10V | 46ns | 27 ns | 20V | -200V | 48A Tc | 200V | 2500 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IXFN230N20T | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Chassis Mount | Tube | 2007 | GigaMOS™ | yes | Active | 1 (Unlimited) | 4 | EAR99 | ROHS3 Compliant | Lead Free | UL RECOGNIZED, AVALANCHE RATED | SOT-227-4, miniBLOC | Chassis Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PUFM-X4 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | ISOLATED | 1090W Tc | 220A | SWITCHING | 0.0075Ohm | 200V | SILICON | N-Channel | 7.5m Ω @ 60A, 10V | 5V @ 8mA | 28000pF @ 25V | 378nC @ 10V | 220A Tc | 200V | 630A | 3000 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN56N90P | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 35 Weeks | Chassis Mount | Tube | 2011 | Polar™ | yes | Active | 1 (Unlimited) | 4 | ROHS3 Compliant | Lead Free | 4 | AVALANCHE RATED, UL RECOGNIZED | SOT-227-4, miniBLOC | 135MOhm | Chassis Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 4 | FET General Purpose Power | Not Qualified | 1 | ISOLATED | Single | 1kW | 1000W Tc | 56A | SWITCHING | 93 ns | SILICON | N-Channel | 135m Ω @ 28A, 10V | 6.5V @ 3mA | 23000pF @ 25V | 375nC @ 10V | 80ns | 38 ns | 900V | 56A Tc | 168A | 2000 mJ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| IXTH12N150 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 28 Weeks | Through Hole | Tube | 2012 | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | AVALANCHE RATED | TO-247-3 | not_compliant | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | NOT SPECIFIED | NOT SPECIFIED | R-PSFM-T3 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | TO-247AD | DRAIN | 890W | 890W Tc | 12A | SWITCHING | 2Ohm | SILICON | N-Channel | 2 Ω @ 6A, 10V | 4.5V @ 250μA | 3720pF @ 25V | 106nC @ 10V | 30V | 12A Tc | 1500V | 40A | 750 mJ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH170N10P | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Through Hole | Tube | 2006 | HiPerFET™, PolarP2™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | 16.26mm | ROHS3 Compliant | Lead Free | No | 3 | AVALANCHE RATED | TO-247-3 | No SVHC | 21.46mm | 5.3mm | 9MOhm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | FET General Purpose Power | 1 | TO-247AD | DRAIN | Single | 714W | 35 ns | 5V | 715W Tc | 170A | SWITCHING | 90 ns | SILICON | N-Channel | 9m Ω @ 500mA, 10V | 5V @ 4mA | 6000pF @ 25V | 198nC @ 10V | 50ns | 33 ns | 20V | 100V | 170A Tc | 2000 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IXTX200N10L2 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 28 Weeks | Through Hole | Tube | 2010 | Linear L2™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | No | 247 | AVALANCHE RATED | TO-247-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | TIN SILVER COPPER | SINGLE | 3 | R-PSIP-T3 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 1.04kW | 1040W Tc | 200A | SWITCHING | SILICON | N-Channel | 11m Ω @ 100A, 10V | 4.5V @ 3mA | 23000pF @ 25V | 540nC @ 10V | 200A Tc | 100V | 500A | 5000 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFB30N120P | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Through Hole | Tube | 2010 | HiPerFET™, PolarP2™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | 3 | AVALANCHE RATED | TO-264-3, TO-264AA | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | 3 | FET General Purpose Power | Not Qualified | 1 | DRAIN | Single | 1.25kW | 1250W Tc | 30A | SWITCHING | 95 ns | SILICON | N-Channel | 350m Ω @ 500mA, 10V | 6.5V @ 1mA | 22500pF @ 25V | 310nC @ 10V | 60ns | 56 ns | 30V | 1.2kV | 30A Tc | 1200V | 75A | 2000 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IXFH400N075T2 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 20 Weeks | Through Hole | Tube | 2009 | GigaMOS™, HiPerFET™, TrenchT2™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | AVALANCHE RATED | TO-247-3 | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSFM-T3 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 1000W Tc | 400A | SWITCHING | 0.0023Ohm | 75V | SILICON | N-Channel | 2.3m Ω @ 100A, 10V | 4V @ 250μA | 24000pF @ 25V | 420nC @ 10V | 400A Tc | 75V | 1000A | 1500 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH80N65X2 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 19 Weeks | Through Hole | Tube | 2015 | HiPerFET™ | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | AVALANCHE RATED | TO-247-3 | not_compliant | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | NOT SPECIFIED | NOT SPECIFIED | R-PSFM-T3 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 890W Tc | 80A | SWITCHING | 0.038Ohm | 650V | SILICON | N-Channel | 40m Ω @ 40A, 10V | 5.5V @ 4mA | 8245pF @ 25V | 143nC @ 10V | 80A Tc | 650V | 160A | 3000 mJ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN360N10T | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Chassis Mount, Screw | Tube | 2009 | HiPerFET™ | yes | Active | 1 (Unlimited) | 4 | EAR99 | ROHS3 Compliant | Lead Free | No | 4 | AVALANCHE RATED, UL RECOGNIZED | SOT-227-4, miniBLOC | 2.6MOhm | Chassis Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | NICKEL | UPPER | UNSPECIFIED | 4 | FET General Purpose Power | 1 | ISOLATED | Single | 830W | 830W Tc | 360A | SWITCHING | 80 ns | SILICON | N-Channel | 2.6m Ω @ 180A, 10V | 4.5V @ 250μA | 36000pF @ 25V | 505nC @ 10V | 100ns | 160 ns | 20V | 360A Tc | 100V | 900A | 2000 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IXFK360N15T2 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Through Hole | Tube | 2009 | GigaMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | AVALANCHE RATED | TO-264-3, TO-264AA | 1 | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 100A | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSFM-T3 | FET General Purpose Power | Not Qualified | 150V | 1 | SINGLE WITH BUILT-IN DIODE | 360A | DRAIN | 50 ns | 1670W Tc | 360A | SWITCHING | 0.004Ohm | 115 ns | SILICON | N-Channel | 4m Ω @ 60A, 10V | 5V @ 8mA | 47500pF @ 25V | 715nC @ 10V | 170ns | 265 ns | 360A Tc | 900A | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IXFN360N15T2 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Chassis Mount | Tube | 2009 | GigaMOS™ | yes | Active | 1 (Unlimited) | 4 | EAR99 | ROHS3 Compliant | Lead Free | UL RECOGNIZED, AVALANCHE RATED | SOT-227-4, miniBLOC | unknown | 4mOhm | Chassis Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 100A | NICKEL | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PUFM-X4 | FET General Purpose Power | Not Qualified | 150V | 1 | SINGLE WITH BUILT-IN DIODE | 1 | 310A | ISOLATED | 50 ns | 1070W Tc | 310A | SWITCHING | 115 ns | SILICON | N-Channel | 4m Ω @ 60A, 10V | 5V @ 8mA | 47500pF @ 25V | 715nC @ 10V | 170ns | 265 ns | 310A Tc | 900A | 10V | ±20V |