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IXYS(3783)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Length | RoHS Status | Lead Free | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Resistance | Mounting Type | Operating Temperature | Technology | Operating Mode | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Subcategory | Qualification Status | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Power Dissipation-Max | Continuous Drain Current (ID) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | FET Feature | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IXTK140N20P | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 28 Weeks | Through Hole | Tube | 2006 | PolarHT™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | AVALANCHE RATED | TO-264-3, TO-264AA | No SVHC | unknown | 18MOhm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 1 | DRAIN | Single | 800W | 5V | 800W Tc | 140A | SWITCHING | 150 ns | SILICON | N-Channel | 18m Ω @ 70A, 10V | 5V @ 500μA | 7500pF @ 25V | 240nC @ 10V | 35ns | 90 ns | 20V | 200V | 140A Tc | 280A | 4000 mJ | 10V | ±20V | |||||||||||||||||||||
| IXFN170N30P | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Chassis Mount, Screw | Tube | 2008 | Polar™ | yes | Active | 1 (Unlimited) | 4 | EAR99 | ROHS3 Compliant | Lead Free | No | 4 | AVALANCHE RATED | SOT-227-4, miniBLOC | Chassis Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Nickel (Ni) | UPPER | UNSPECIFIED | 4 | FET General Purpose Power | 1 | ISOLATED | Single | 890W | 890W Tc | 138A | SWITCHING | 79 ns | SILICON | N-Channel | 18m Ω @ 85A, 10V | 4.5V @ 1mA | 20000pF @ 25V | 258nC @ 10V | 29ns | 16 ns | 30V | 300V | 138A Tc | 500A | 5000 mJ | 10V | ±20V | |||||||||||||||||||||||||
| IXFB44N100P | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Through Hole | Tube | 2008 | HiPerFET™, PolarP2™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | 3 | AVALANCHE RATED | TO-264-3, TO-264AA | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | 3 | FET General Purpose Power | Not Qualified | 1 | DRAIN | Single | 1.25kW | 1250W Tc | 44A | SWITCHING | 0.22Ohm | 90 ns | SILICON | N-Channel | 220m Ω @ 22A, 10V | 6.5V @ 1mA | 19000pF @ 25V | 305nC @ 10V | 68ns | 56 ns | 30V | 1kV | 44A Tc | 1000V | 110A | 2000 mJ | 10V | ±30V | |||||||||||||||||||||||
| IXTA3N150HV | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Surface Mount | Tube | 2005 | Active | 1 (Unlimited) | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | e3 | Matte Tin (Sn) | 250W Tc | 3A | N-Channel | 7.3 Ω @ 1.5A, 10V | 5V @ 250μA | 1375pF @ 25V | 38.6nC @ 10V | 3A Tc | 1500V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP36P15P | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Through Hole | Tube | 2009 | PolarP™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | No | AVALANCHE RATED | TO-220-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | TIN SILVER COPPER | 3 | R-PSFM-T3 | Other Transistors | 1 | TO-220AB | DRAIN | Single | 300W | 300W Tc | 36A | SWITCHING | 36 ns | SILICON | P-Channel | 110m Ω @ 18A, 10V | 4.5V @ 250μA | 3100pF @ 25V | 55nC @ 10V | 31ns | 15 ns | 20V | -150V | 36A Tc | 150V | 90A | 10V | ±20V | |||||||||||||||||||||||||
| IXFH88N30P | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Through Hole | Tube | 2006 | HiPerFET™, PolarP2™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | 16.26mm | ROHS3 Compliant | Lead Free | 3 | AVALANCHE RATED | TO-247-3 | No SVHC | 21.46mm | 5.3mm | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | 3 | FET General Purpose Power | Not Qualified | 1 | TO-247AD | DRAIN | Single | 600W | 25 ns | 5V | 600W Tc | 88A | SWITCHING | 0.04Ohm | 96 ns | SILICON | N-Channel | 40m Ω @ 44A, 10V | 5V @ 4mA | 6300pF @ 25V | 180nC @ 10V | 24ns | 25 ns | 20V | 300V | 88A Tc | 220A | 2000 mJ | 10V | ±20V | ||||||||||||||||
| IXFK27N80Q | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Through Hole | Tube | 2002 | HiPerFET™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | 19.96mm | ROHS3 Compliant | Lead Free | 3 | AVALANCHE RATED | TO-264-3, TO-264AA | 26.16mm | 5.13mm | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 1 | DRAIN | Single | 500W | 20 ns | 500W Tc | 27A | SWITCHING | 50 ns | SILICON | N-Channel | 320m Ω @ 500mA, 10V | 4.5V @ 4mA | 7600pF @ 25V | 170nC @ 10V | 28ns | 13 ns | 20V | 800V | 27A Tc | 108A | 2500 mJ | 10V | ±20V | |||||||||||||||||||||||
| IXFK360N10T | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Through Hole | Tube | 2011 | GigaMOS™ HiPerFET™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | AVALANCHE RATED | TO-264-3, TO-264AA | unknown | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSFM-T3 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 1250W Tc | 360A | SWITCHING | 0.0029Ohm | 100V | SILICON | N-Channel | 2.9m Ω @ 100A, 10V | 5V @ 3mA | 33000pF @ 25V | 525nC @ 10V | 360A Tc | 100V | 900A | 3000 mJ | 10V | ±20V | |||||||||||||||||||||||||
| IXFN140N30P | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Chassis Mount, Panel | Tube | 2003 | Polar™ | yes | Active | 1 (Unlimited) | 4 | EAR99 | 38.2mm | ROHS3 Compliant | Lead Free | 4 | AVALANCHE RATED, UL RECOGNIZED | SOT-227-4, miniBLOC | No SVHC | unknown | 9.6mm | 25.07mm | 24mOhm | Chassis Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 4 | FET General Purpose Power | Not Qualified | 1 | ISOLATED | Single | 700W | 30 ns | 5V | 700W Tc | 115A | SWITCHING | 100 ns | SILICON | N-Channel | 24m Ω @ 70A, 10V | 5V @ 8mA | 14800pF @ 25V | 185nC @ 10V | 30ns | 20 ns | 20V | 300V | 110A | 110A Tc | 300A | 5000 mJ | 10V | ±20V | ||||||||||||||
| IXTH76P10T | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 17 Weeks | Through Hole | Tube | 2010 | TrenchP™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | No | AVALANCHE RATED | TO-247-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | 3 | R-PSFM-T3 | Other Transistors | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 298W | 298W Tc | 76A | SWITCHING | 0.024Ohm | SILICON | P-Channel | 25m Ω @ 500mA, 10V | 4V @ 250μA | 13700pF @ 25V | 197nC @ 10V | 15V | 76A Tc | 100V | 230A | 10V | ±15V | |||||||||||||||||||||||||||||
| IXFH22N65X2 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 19 Weeks | Through Hole | Tube | 2015 | HiPerFET™ | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | TO-247-3 | not_compliant | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 390W Tc | 22A | N-Channel | 160m Ω @ 11A, 10V | 5.5V @ 1.5mA | 2310pF @ 25V | 38nC @ 10V | 22A Tc | 650V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| IXTQ110N10P | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Through Hole | Tube | 2006 | PolarHT™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | 3 | AVALANCHE RATED | TO-3P-3, SC-65-3 | unknown | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 1 | DRAIN | Single | 480W | 480W Tc | 110A | SWITCHING | 0.015Ohm | 65 ns | SILICON | N-Channel | 15m Ω @ 500mA, 10V | 5V @ 250μA | 3550pF @ 25V | 110nC @ 10V | 25ns | 25 ns | 20V | 100V | 110A Tc | 250A | 1000 mJ | 10V | ±20V | ||||||||||||||||||||||||
| IXFT320N10T2 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tube | 2012 | GigaMOS™, HiPerFET™, TrenchT2™ | yes | Active | 1 (Unlimited) | 2 | ROHS3 Compliant | Lead Free | 3 | AVALANCHE RATED | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | unknown | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | PURE TIN | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 1000W Tc | 320A | SWITCHING | 100V | SILICON | N-Channel | 3.5m Ω @ 100A, 10V | 4V @ 250μA | 26000pF @ 25V | 430nC @ 10V | 320A Tc | 100V | 800A | 1500 mJ | 10V | ±20V | |||||||||||||||||||||||||
| IXFK220N15P | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Through Hole | Tube | 2011 | HiPerFET™, PolarP2™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | AVALANCHE RATED | TO-264-3, TO-264AA | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSFM-T3 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 1250W Tc | 220A | SWITCHING | 0.009Ohm | 150V | SILICON | N-Channel | 9m Ω @ 500mA, 10V | 4.5V @ 8mA | 15400pF @ 25V | 162nC @ 10V | 220A Tc | 150V | 600A | 3000 mJ | 10V | ±20V | |||||||||||||||||||||||||||
| IXFR16N120P | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Through Hole | Tube | 2012 | HiPerFET™, PolarP2™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | 3 | AVALANCHE RATED, UL RECOGNIZED | ISOPLUS247™ | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | 3 | FET General Purpose Power | Not Qualified | 1 | ISOLATED | Single | 230W | 230W Tc | 9A | SWITCHING | 66 ns | SILICON | N-Channel | 1.04 Ω @ 8A, 10V | 6.5V @ 1mA | 6900pF @ 25V | 120nC @ 10V | 28ns | 35 ns | 30V | 1.2kV | 9A | 9A Tc | 1200V | 800 mJ | 10V | ±30V | |||||||||||||||||||||||||
| IXFB170N30P | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Through Hole | Tube | 2008 | HiPerFET™, PolarP2™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | AVALANCHE RATED | TO-264-3, TO-264AA | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSIP-T3 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 1250W Tc | 170A | SWITCHING | 0.018Ohm | 300V | SILICON | N-Channel | 18m Ω @ 85A, 10V | 4.5V @ 1mA | 20000pF @ 25V | 258nC @ 10V | 170A Tc | 300V | 500A | 5000 mJ | 10V | ±20V | ||||||||||||||||||||||||||
| IXFB52N90P | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Through Hole | Tube | 2009 | HiPerFET™, PolarP2™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | 3 | AVALANCHE RATED | TO-264-3, TO-264AA | No SVHC | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | 3 | FET General Purpose Power | Not Qualified | 1 | DRAIN | Single | 1.25kW | 3.5V | 1250W Tc | 52A | SWITCHING | 0.16Ohm | 95 ns | SILICON | N-Channel | 160m Ω @ 26A, 10V | 6.5V @ 1mA | 19000pF @ 25V | 308nC @ 10V | 80ns | 42 ns | 30V | 900V | 3.5 V | 52A Tc | 104A | 2000 mJ | 10V | ±30V | |||||||||||||||||||||
| IXFR40N90P | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Through Hole | Tube | 2011 | HiPerFET™, PolarP2™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | 247 | AVALANCHE RATED, UL RECOGNIZED | ISOPLUS247™ | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSIP-T3 | FET General Purpose Power | Not Qualified | 1 | ISOLATED | Single | 300W | 300W Tc | 21A | SWITCHING | 0.23Ohm | 77 ns | SILICON | N-Channel | 230m Ω @ 20A, 10V | 6.5V @ 1mA | 14000pF @ 25V | 230nC @ 10V | 50ns | 46 ns | 900V | 21A Tc | 80A | 1500 mJ | 10V | ±30V | |||||||||||||||||||||||||
| IXFX26N100P | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Through Hole | Tube | 2008 | HiPerFET™, PolarP2™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | 3 | AVALANCHE RATED | TO-247-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | 3 | FET General Purpose Power | Not Qualified | 1 | DRAIN | Single | 780W | 780W Tc | 26A | SWITCHING | 72 ns | SILICON | N-Channel | 390m Ω @ 13A, 10V | 6.5V @ 1mA | 11900pF @ 25V | 197nC @ 10V | 45ns | 50 ns | 30V | 1kV | 26A Tc | 1000V | 65A | 1000 mJ | 10V | ±30V | |||||||||||||||||||||||||
| IXFN140N25T | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Chassis Mount | Tube | 2010 | GigaMOS™ HiPerFET™ | yes | Active | 1 (Unlimited) | 4 | EAR99 | ROHS3 Compliant | AVALANCHE RATED, UL RECOGNIZED | SOT-227-4, miniBLOC | unknown | Chassis Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | NICKEL | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PUFM-X4 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | ISOLATED | 690W Tc | 120A | SWITCHING | 0.017Ohm | 250V | SILICON | N-Channel | 17m Ω @ 60A, 10V | 5V @ 4mA | 19000pF @ 25V | 255nC @ 10V | 120A Tc | 250V | 400A | 3000 mJ | 10V | ±20V | ||||||||||||||||||||||||||
| IXFN50N50 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Tube | 2000 | HiPerFET™ | yes | Active | 1 (Unlimited) | 4 | ROHS3 Compliant | Lead Free | No | 4 | AVALANCHE RATED | SOT-227-4, miniBLOC | 90MOhm | Chassis Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Nickel (Ni) | UPPER | UNSPECIFIED | 4 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 600W | 600W Tc | 50A | SWITCHING | 120 ns | SILICON | N-Channel | 90m Ω @ 500mA, 10V | 4.5V @ 8mA | 9400pF @ 25V | 330nC @ 10V | 60ns | 45 ns | 20V | 500V | 50A Tc | 200A | 10V | ±20V | |||||||||||||||||||||||||||
| IXKN45N80C | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 28 Weeks | Chassis Mount | Tube | 2008 | CoolMOS™ | yes | Active | 1 (Unlimited) | 4 | ROHS3 Compliant | Lead Free | 4 | UL RECOGNIZED, AVALANCHE RATED | SOT-227-4, miniBLOC | Chassis Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 4 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | ISOLATED | 380W | 380W Tc | 44A | SWITCHING | 75 ns | SILICON | N-Channel | 74m Ω @ 44A, 10V | 3.9V @ 4mA | 360nC @ 10V | 15ns | 10 ns | 20V | 800V | Super Junction | 44A Tc | 670 mJ | 10V | ±20V | |||||||||||||||||||||||||
| IXTY2N100P | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2008 | Polar™ | yes | Active | 1 (Unlimited) | 2 | ROHS3 Compliant | Lead Free | AVALANCHE RATED | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | TO-252AA | DRAIN | Single | 86W | 86W Tc | 2A | SWITCHING | 80 ns | SILICON | N-Channel | 7.5 Ω @ 500mA, 10V | 4.5V @ 100μA | 655pF @ 25V | 24.3nC @ 10V | 29ns | 27 ns | 20V | 1kV | 2A | 2A Tc | 1000V | 5A | 150 mJ | 10V | ±20V | ||||||||||||||||||||||
| IXFA4N100Q | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Surface Mount | Tube | 2011 | HiPerFET™ | yes | Active | 1 (Unlimited) | 2 | ROHS3 Compliant | Lead Free | No | AVALANCHE RATED | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 3Ohm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | GULL WING | 4 | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 150W | 150W Tc | 4A | SWITCHING | 32 ns | SILICON | N-Channel | 3 Ω @ 2A, 10V | 4.5V @ 1.5mA | 1050pF @ 25V | 39nC @ 10V | 15ns | 18 ns | 20V | 1kV | 4A | 4A Tc | 1000V | 700 mJ | 10V | ±20V | ||||||||||||||||||||||||
| IXTQ200N10T | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2008 | TrenchMV™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | AVALANCHE RATED | TO-3P-3, SC-65-3 | unknown | 5.5MOhm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | PURE TIN | NOT SPECIFIED | NOT SPECIFIED | 3 | FET General Purpose Power | Not Qualified | 1 | DRAIN | Single | 550W | 550W Tc | 200A | SWITCHING | 45 ns | SILICON | N-Channel | 5.5m Ω @ 50A, 10V | 4.5V @ 250μA | 9400pF @ 25V | 152nC @ 10V | 31ns | 34 ns | 100V | 200A Tc | 500A | 1500 mJ | 10V | ±30V | |||||||||||||||||||||||
| IXFH220N06T3 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Through Hole | Tube | 2016 | HiperFET™, TrenchT3™ | yes | Active | 1 (Unlimited) | ROHS3 Compliant | TO-247-3 | unknown | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | 440W Tc | 220A | N-Channel | 4m Ω @ 100A, 10V | 4V @ 250μA | 8500pF @ 25V | 136nC @ 10V | 220A Tc | 60V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH34N65X2 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 19 Weeks | Through Hole | Tube | 2015 | HiPerFET™ | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | TO-247-3 | unknown | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 540W Tc | 34A | N-Channel | 105m Ω @ 17A, 10V | 5.5V @ 2.5mA | 3330pF @ 25V | 56nC @ 10V | 34A Tc | 650V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| IXTQ88N30P | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2006 | PolarHT™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | 3 | AVALANCHE RATED | TO-3P-3, SC-65-3 | No SVHC | unknown | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 1 | DRAIN | Single | 600W | 5V | 600W Tc | 88A | SWITCHING | 0.04Ohm | 96 ns | SILICON | N-Channel | 40m Ω @ 44A, 10V | 5V @ 250μA | 6300pF @ 25V | 180nC @ 10V | 24ns | 25 ns | 20V | 300V | 88A Tc | 220A | 2000 mJ | 10V | ±20V | |||||||||||||||||||||||
| IXFA220N06T3 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tube | 2016 | HiperFET™, TrenchT3™ | yes | Active | 1 (Unlimited) | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | 440W Tc | 220A | N-Channel | 4m Ω @ 100A, 10V | 4V @ 250μA | 8500pF @ 25V | 136nC @ 10V | 220A Tc | 60V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IXTQ75N10P | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Through Hole | Tube | 2006 | PolarHT™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | 3 | AVALANCHE RATED | TO-3P-3, SC-65-3 | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 1 | DRAIN | Single | 360W | 360W Tc | 75A | SWITCHING | 0.025Ohm | 66 ns | SILICON | N-Channel | 25m Ω @ 500mA, 10V | 5.5V @ 250μA | 2250pF @ 25V | 74nC @ 10V | 53ns | 45 ns | 20V | 100V | 75A Tc | 200A | 1000 mJ | 10V | ±20V |