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IXYS(3783)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | RoHS Status | Lead Free | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Number of Drivers | Resistance | Mounting Type | Operating Temperature | Technology | Operating Mode | HTS Code | Nominal Supply Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Surface Mount | JESD-30 Code | Subcategory | Qualification Status | Max Power Dissipation | Power - Max | Output Voltage | Number of Elements | Configuration | JEDEC-95 Code | Output Current | Case Connection | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Input | Power Dissipation-Max | Recovery Time | Max Collector Current | Collector Emitter Breakdown Voltage | Collector Emitter Voltage (VCEO) | Continuous Drain Current (ID) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | FET Feature | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Input Capacitance | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Current - Collector Cutoff (Max) | Vce(on) (Max) @ Vge, Ic | IGBT Type | NTC Thermistor | Input Capacitance (Cies) @ Vce | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MWI150-06A8T | IXYS | $0.00 |
Min: 1 Mult: 1 |
Chassis Mount | Bulk | Active | 1 (Unlimited) | ROHS3 Compliant | E3 | Chassis Mount | MWI | 515W | 515W | Three Phase Inverter | Standard | 170A | 600V | 2.5V | 6.5nF | 1.5mA | 2.5V @ 15V, 150A | NPT | No | 6.5nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MIXG240W1200TEH | IXYS | $0.00 |
Min: 1 Mult: 1 |
20 Weeks | Active | E3 | Chassis Mount | -40°C~175°C TJ | 1250W | Three Phase Inverter | Standard | 200μA | 2V @ 15V, 200A | PT | Yes | 10.6nF @ 400V | 1200V | 370A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MWI75-12A8T | IXYS | $0.00 |
Min: 1 Mult: 1 |
Chassis Mount | Bulk | Active | 1 (Unlimited) | ROHS3 Compliant | Chassis Mount | MWI | 500W | 500W | Three Phase Inverter | Standard | 125A | 1.2kV | 2.6V | 5.5nF | 5mA | 2.6V @ 15V, 75A | NPT | No | 5.5nF @ 25V | 1200V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MIXA100PF1200TMH | IXYS | $0.00 |
Min: 1 Mult: 1 |
Obsolete | 3 (168 Hours) | MiniPack2 | Chassis Mount | -40°C~150°C TJ | 500W | Half Bridge | Standard | 300μA | 2.1V @ 15V, 100A | Yes | 1200V | 155A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH42N50P2 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Through Hole | Tube | 2011 | HiPerFET™, PolarHV™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | AVALANCHE RATED | TO-247-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSFM-T3 | FET General Purpose Power | Not Qualified | 1 | DRAIN | Single | 830W | 830W Tc | 42A | SWITCHING | 0.145Ohm | SILICON | N-Channel | 145m Ω @ 500mA, 10V | 4.5V @ 4mA | 5300pF @ 25V | 92nC @ 10V | 30V | 500V | 42A Tc | 126A | 1400 mJ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| IXFK24N100F | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Tube | 2003 | HiPerRF™ | yes | Obsolete | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | 3 | AVALANCHE RATED | TO-264-3, TO-264AA | No SVHC | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | Not Qualified | 1 | DRAIN | Single | 560W | 560W Tc | 24A | SWITCHING | 52 ns | SILICON | N-Channel | 390m Ω @ 12A, 10V | 5.5V @ 8mA | 6600pF @ 25V | 195nC @ 10V | 18ns | 11 ns | 20V | 1kV | 24A Tc | 1000V | 96A | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IXFK21N100F | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Tube | 2002 | HiPerRF™ | yes | Obsolete | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | 3 | AVALANCHE RATED | TO-264-3, TO-264AA | No SVHC | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | FET General Purpose Power | Not Qualified | 1 | DRAIN | Single | 500W | 500W Tc | 21A | SWITCHING | 0.5Ohm | 55 ns | SILICON | N-Channel | 500m Ω @ 10.5A, 10V | 5.5V @ 4mA | 5500pF @ 25V | 160nC @ 10V | 16ns | 15 ns | 20V | 1kV | 21A Tc | 1000V | 84A | 2500 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IXTP80N10T | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Through Hole | Tube | 2009 | TrenchMV™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | AVALANCHE RATED | TO-220-3 | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSFM-T3 | FET General Purpose Power | Not Qualified | 1 | TO-220AB | DRAIN | Single | 230W | 230W Tc | 80A | SWITCHING | 0.014Ohm | 40 ns | SILICON | N-Channel | 14m Ω @ 25A, 10V | 5V @ 100μA | 3040pF @ 25V | 60nC @ 10V | 54ns | 48 ns | 20V | 100V | 80A Tc | 220A | 400 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IXFK160N30T | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Through Hole | Tube | 2009 | GigaMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | AVALANCHE RATED | TO-264-3, TO-264AA | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSFM-T3 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 1390W Tc | 160A | SWITCHING | 0.019Ohm | 300V | SILICON | N-Channel | 19m Ω @ 60A, 10V | 5V @ 8mA | 28000pF @ 25V | 335nC @ 10V | 160A Tc | 300V | 440A | 3000 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IXTT40N50L2 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Surface Mount | Tube | 2006 | Linear L2™ | yes | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Lead Free | 3 | AVALANCHE RATED | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | No SVHC | unknown | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | PURE TIN | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSSO-G2 | FET General Purpose Powers | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 540W | 2.5V | 540W Tc | 40A | SWITCHING | 500V | SILICON | N-Channel | 170m Ω @ 20A, 10V | 4.5V @ 250μA | 10400pF @ 25V | 320nC @ 10V | 20V | 2.5 V | 40A Tc | 500V | 80A | 2000 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IXFN180N25T | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Chassis Mount | Tube | 2009 | GigaMOS™ | yes | Active | 1 (Unlimited) | 4 | EAR99 | ROHS3 Compliant | Lead Free | UL RECOGNIZED, AVALANCHE RATED | SOT-227-4, miniBLOC | unknown | Chassis Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | NICKEL | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PUFM-X4 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | ISOLATED | 900W Tc | 168A | SWITCHING | 0.0129Ohm | 250V | SILICON | N-Channel | 12.9m Ω @ 60A, 10V | 5V @ 8mA | 28000pF @ 25V | 345nC @ 10V | 164A | 168A Tc | 250V | 500A | 3000 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IXTT02N450HV | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Surface Mount | Tube | 2012 | Active | 1 (Unlimited) | 2 | ROHS3 Compliant | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | GULL WING | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 113W | 113W Tc | 200mA | SWITCHING | 625Ohm | 28 ns | SILICON | N-Channel | 750 Ω @ 10mA, 10V | 6.5V @ 250μA | 256pF @ 25V | 10.4nC @ 10V | 48ns | 143 ns | 20V | 4.5kV | 0.2A | 200mA Tc | 4500V | 0.6A | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN160N30T | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Chassis Mount | Tube | 2009 | GigaMOS™ | yes | Active | 1 (Unlimited) | 4 | EAR99 | ROHS3 Compliant | Lead Free | AVALANCHE RATED, UL RECOGNIZED | SOT-227-4, miniBLOC | Chassis Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PUFM-X4 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | ISOLATED | 900W Tc | 130A | SWITCHING | 0.019Ohm | 300V | SILICON | N-Channel | 19m Ω @ 60A, 10V | 5V @ 8mA | 28000pF @ 25V | 335nC @ 10V | 130A Tc | 300V | 440A | 3000 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IXTT100N25P | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Surface Mount | Tube | 2006 | PolarHT™ | yes | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Lead Free | AVALANCHE RATED | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | not_compliant | 27MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSSO-G2 | Not Qualified | 1 | DRAIN | Single | 600W | 600W Tc | 100A | SWITCHING | 100 ns | SILICON | N-Channel | 24m Ω @ 50A, 10V | 5V @ 250μA | 6300pF @ 25V | 185nC @ 10V | 26ns | 28 ns | 20V | 250V | 100A Tc | 250A | 2000 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IXFT24N90P | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tube | 2008 | HiPerFET™, PolarP2™ | yes | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | 3 | AVALANCHE RATED | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | No SVHC | unknown | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | DRAIN | Single | 660W | 3.5V | 660W Tc | 24A | SWITCHING | 0.42Ohm | 68 ns | SILICON | N-Channel | 420m Ω @ 12A, 10V | 6.5V @ 1mA | 7200pF @ 25V | 130nC @ 10V | 40ns | 38 ns | 30V | 900V | 3.5 V | 24A Tc | 48A | 1000 mJ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| IXFK520N075T2 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Through Hole | Tube | 2009 | GigaMOS™, TrenchT2™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | AVALANCHE RATED | TO-264-3, TO-264AA | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSFM-T3 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 1250W Tc | 520A | SWITCHING | 0.0022Ohm | 75V | SILICON | N-Channel | 2.2m Ω @ 100A, 10V | 5V @ 8mA | 41000pF @ 25V | 545nC @ 10V | 520A Tc | 75V | 1350A | 3000 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IXFX140N30P | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Through Hole | Tube | 2008 | HiPerFET™, PolarP2™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | No | 3 | AVALANCHE RATED | TO-247-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | FET General Purpose Power | 1 | DRAIN | Single | 1.04kW | 1040W Tc | 140A | SWITCHING | 0.024Ohm | 100 ns | SILICON | N-Channel | 24m Ω @ 70A, 10V | 5V @ 8mA | 14800pF @ 25V | 185nC @ 10V | 30ns | 20 ns | 20V | 300V | 140A Tc | 5000 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IXFK120N65X2 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 19 Weeks | Through Hole | Tube | 2015 | HiPerFET™ | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | TO-264-3, TO-264AA | not_compliant | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 1250W Tc | 120A | N-Channel | 24m Ω @ 60A, 10V | 5.5V @ 8mA | 15500pF @ 25V | 225nC @ 10V | 120A Tc | 650V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK44N80P | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Through Hole | Tube | 2006 | HiPerFET™, PolarHT™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | No | 3 | AVALANCHE RATED | TO-264-3, TO-264AA | No SVHC | 190MOhm | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | 1 | DRAIN | Single | 1.04kW | 5V | 1040W Tc | 44A | SWITCHING | 75 ns | SILICON | N-Channel | 190m Ω @ 22A, 10V | 5V @ 8mA | 12000pF @ 25V | 198nC @ 10V | 22ns | 27 ns | 30V | 800V | 44A Tc | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| IXFH6N100F | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Tube | 2003 | HiPerRF™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | 3 | AVALANCHE RATED | TO-247-3 | No SVHC | 1.9Ohm | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | Not Qualified | 1 | DRAIN | Single | 180W | 180W Tc | 6A | SWITCHING | 31 ns | SILICON | N-Channel | 1.9 Ω @ 3A, 10V | 5.5V @ 2.5mA | 1770pF @ 25V | 54nC @ 10V | 8.6ns | 8.3 ns | 20V | 1kV | 6A | 6A Tc | 1000V | 24A | 700 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IXFN420N10T | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Chassis Mount | Tube | 2009 | GigaMOS™ HiPerFET™ | yes | Active | 1 (Unlimited) | 4 | EAR99 | ROHS3 Compliant | Lead Free | 4 | AVALANCHE RATED, UL RECOGNIZED | SOT-227-4, miniBLOC | Chassis Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 4 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | ISOLATED | 1070W Tc | 420A | SWITCHING | 0.0023Ohm | 100V | SILICON | N-Channel | 2.3m Ω @ 60A, 10V | 5V @ 8mA | 47000pF @ 25V | 670nC @ 10V | 420A Tc | 100V | 1000A | 5000 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IXFX360N15T2 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Through Hole | Tube | 2009 | GigaMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 247 | AVALANCHE RATED | TO-247-3 | unknown | 1 | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 100A | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSIP-T3 | FET General Purpose Power | Not Qualified | 150V | 1 | SINGLE WITH BUILT-IN DIODE | 360A | DRAIN | 50 ns | 1670W Tc | 360A | SWITCHING | 0.004Ohm | 115 ns | SILICON | N-Channel | 4m Ω @ 60A, 10V | 5V @ 8mA | 47500pF @ 25V | 715nC @ 10V | 170ns | 265 ns | 360A Tc | 900A | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IXFA6N120P | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Surface Mount | Tube | 2011 | HiPerFET™, PolarP2™ | yes | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Lead Free | 3 | AVALANCHE RATED | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 8541.90.00.00 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 250W Tc | 6A | SWITCHING | 0.0024Ohm | 1200V | SILICON | N-Channel | 2.4 Ω @ 500mA, 10V | 5V @ 1mA | 2830pF @ 25V | 92nC @ 10V | 6A | 6A Tc | 1200V | 18A | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| IXTP4N80P | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Through Hole | Tube | 2004 | PolarHV™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | AVALANCHE RATED | TO-220-3 | No SVHC | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 1 | TO-220AB | DRAIN | Single | 100W | 5.5V | 100W Tc | 3.6A | SWITCHING | 60 ns | SILICON | N-Channel | 3.4 Ω @ 500mA, 10V | 5.5V @ 100μA | 750pF @ 25V | 14.2nC @ 10V | 24ns | 29 ns | 30V | 800V | 3.6A Tc | 8A | 250 mJ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| IXFH46N65X2 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 19 Weeks | Through Hole | Tube | 2013 | HiPerFET™ | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | TO-247-3 | unknown | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 660W Tc | 46A | N-Channel | 76m Ω @ 23A, 10V | 5.5V @ 4mA | 4810pF @ 25V | 75nC @ 10V | 46A Tc | 650V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX120N25P | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Through Hole | Tube | 2006 | PolarHT™ HiPerFET™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | AVALANCHE RATED | TO-247-3 | 24MOhm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | 3 | FET General Purpose Power | Not Qualified | 1 | DRAIN | Single | 700W | 700W Tc | 120A | SWITCHING | 130 ns | SILICON | N-Channel | 24m Ω @ 60A, 10V | 5V @ 4mA | 8000pF @ 25V | 185nC @ 10V | 33ns | 33 ns | 20V | 250V | 120A Tc | 2500 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IXFH20N100P | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Through Hole | Tube | 2008 | HiPerFET™, PolarP2™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | No | AVALANCHE RATED | TO-247-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | R-PSFM-T3 | FET General Purpose Power | 1 | TO-247AD | DRAIN | Single | 660W | 660W Tc | 20A | SWITCHING | 0.57Ohm | 56 ns | SILICON | N-Channel | 570m Ω @ 10A, 10V | 6.5V @ 1mA | 7300pF @ 25V | 126nC @ 10V | 37ns | 45 ns | 30V | 1kV | 20A Tc | 1000V | 50A | 800 mJ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| IXKH70N60C5 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 20 Weeks | Through Hole | Tube | 2009 | CoolMOS™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | No | 3 | AVALANCHE RATED | TO-247-3 | 45MOhm | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 3 | FET General Purpose Power | 1 | TO-247AD | DRAIN | Single | 625W | 70A | SWITCHING | 100 ns | SILICON | N-Channel | 45m Ω @ 44A, 10V | 3.5V @ 3mA | 6800pF @ 100V | 190nC @ 10V | 20ns | 10 ns | 20V | 600V | Super Junction | 70A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH9N80 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 1997 | HiPerFET™ | yes | Not For New Designs | 1 (Unlimited) | 3 | ROHS3 Compliant | 3 | AVALANCHE RATED | TO-247-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | NOT SPECIFIED | NOT SPECIFIED | 3 | FET General Purpose Power | Not Qualified | 1 | DRAIN | Single | 180W | 180W Tc | 250 ns | 9A | SWITCHING | 0.9Ohm | 70 ns | SILICON | N-Channel | 900m Ω @ 500mA, 10V | 4.5V @ 2.5mA | 2600pF @ 25V | 130nC @ 10V | 15ns | 35 ns | 20V | 800V | 9A | 9A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IXFH230N075T2 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Through Hole | Tube | 2010 | TrenchT2™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | AVALANCHE RATED | TO-247-3 | unknown | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-247AD | DRAIN | 480W Tc | 230A | SWITCHING | 0.0042Ohm | 75V | SILICON | N-Channel | 4.2m Ω @ 50A, 10V | 4V @ 250μA | 10500pF @ 25V | 178nC @ 10V | 230A Tc | 75V | 700A | 850 mJ | 10V | ±20V |