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    Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Operating Temperature Voltage - Rated DC Technology Operating Mode HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Reference Standard Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Power Dissipation-Max Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Drive Voltage (Max Rds On,Min Rds On) Vgs (Max)
    SPD02N50C3 SPD02N50C3 Infineon Technologies $0.00
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    		 download Surface Mount Tape & Reel (TR) 2002 CoolMOS™ yes Obsolete 1 (Unlimited) 2 RoHS Compliant Contains Lead 1.8A 3 AVALANCHE RATED TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC Surface Mount -55°C~150°C TJ 560V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) GULL WING NOT SPECIFIED NOT SPECIFIED 3 R-PSSO-G2 FET General Purpose Power Not Qualified 1 TO-252AA DRAIN Not Halogen Free Single 25W 10 ns 3V 500V 25W Tc 1.8A 3Ohm 70 ns SILICON N-Channel 3 Ω @ 1.1A, 10V 3.9V @ 80μA 190pF @ 25V 9nC @ 10V 5ns 15 ns 20V 500V 1.8A Tc 5.4A 50 mJ 10V ±20V
    SPP02N60C3HKSA1 SPP02N60C3HKSA1 Infineon Technologies $0.00
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    		 download Tube 2005 CoolMOS™ yes Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant AVALANCHE RATED TO-220-3 compliant Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB 25W Tc SWITCHING 3Ohm 600V SILICON N-Channel 3 Ω @ 1.1A, 10V 3.9V @ 80μA 200pF @ 25V 12.5nC @ 10V 1.8A 1.8A Tc 650V 5.4A 50 mJ 10V ±20V
    SPB03N60C3ATMA1 SPB03N60C3ATMA1 Infineon Technologies $0.00
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    		 download Surface Mount Tape & Reel (TR) 2005 CoolMOS™ no Obsolete 1 (Unlimited) 2 EAR99 RoHS Compliant Contains Lead No AVALANCHE RATED, HIGH VOLTAGE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING 4 R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE Halogen Free 38W 7 ns 600V 38W Tc 3.2A SWITCHING 64 ns SILICON N-Channel 1.4 Ω @ 2A, 10V 3.9V @ 135μA 400pF @ 25V 17nC @ 10V 3ns 12 ns 20V 3.2A Tc 650V 9.6A 10V ±20V
    AUIRF3004WL AUIRF3004WL Infineon Technologies $0.00
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    		 download 16 Weeks Surface Mount, Through Hole Tube 2011 HEXFET® Active 1 (Unlimited) 3 EAR99 10.67mm ROHS3 Compliant Tin No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-262-3 Wide Leads No SVHC 11.3mm 4.83mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 FET General Purpose Power 1 TO-262AA Single 375W 19 ns 2V 375W Tc 240A SWITCHING 90 ns SILICON N-Channel 1.4m Ω @ 195A, 10V 4V @ 250μA 9450pF @ 32V 210nC @ 10V 220ns 130 ns 20V 40V 2 V 240A Tc 470 mJ 10V ±20V
    IRFP7718PBF IRFP7718PBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2013 HEXFET®, StrongIRFET™ Active 1 (Unlimited) 3 EAR99 15.87mm ROHS3 Compliant Lead Free 3 TO-247-3 No SVHC 20.7mm 5.31mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE NOT SPECIFIED NOT SPECIFIED 1 1 TO-247AC DRAIN Single 517W 58 ns 517W Tc 195A SWITCHING 75V 266 ns SILICON N-Channel 1.8m Ω @ 100A, 10V 3.7V @ 250μA 29550pF @ 25V 830nC @ 10V 164ns 160 ns 20V 195A Tc 75V 2004 mJ 6V 10V ±20V
    AUIRFP4110 AUIRFP4110 Infineon Technologies $0.00
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    		 download 16 Weeks Through Hole Tube 2014 HEXFET® Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant ULTRA LOW RESISTANCE TO-247-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED R-PSFM-T3 AEC-Q101 1 SINGLE WITH BUILT-IN DIODE TO-247AC DRAIN 370W Tc 120A SWITCHING 0.0045Ohm 100V SILICON N-Channel 4.5m Ω @ 75A, 10V 4V @ 250μA 9620pF @ 50V 210nC @ 10V 120A Tc 100V 670A 190 mJ 10V ±20V
    IPP60R125CPXKSA1 IPP60R125CPXKSA1 Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2007 CoolMOS™ yes Not For New Designs 1 (Unlimited) 3 ROHS3 Compliant Lead Free 25A 3 TO-220-3 Through Hole -55°C~150°C TJ 600V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB Halogen Free 208W 15 ns 600V 208W Tc 25A SWITCHING 50 ns SILICON N-Channel 125m Ω @ 16A, 10V 3.5V @ 1.1mA 2500pF @ 100V 70nC @ 10V 5ns 20V 25A Tc 650V 82A 708 mJ 10V ±20V
    IPI200N25N3GAKSA1 IPI200N25N3GAKSA1 Infineon Technologies $0.00
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    		 download 18 Weeks Through Hole Tube 2011 OptiMOS™ no Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Contains Lead 3 TO-262-3 Long Leads, I2Pak, TO-262AA not_compliant Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE Halogen Free 18 ns 250V 300W Tc 64A SWITCHING 0.02Ohm 45 ns SILICON N-Channel 20m Ω @ 64A, 10V 4V @ 270μA 7100pF @ 100V 86nC @ 10V 20ns 12 ns 20V 64A Tc 256A 10V ±20V
    IPB60R099CPAATMA1 IPB60R099CPAATMA1 Infineon Technologies $0.00
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    		 download 8 Weeks Surface Mount Tape & Reel (TR) 2009 CoolMOS™ no Not For New Designs 1 (Unlimited) 2 ROHS3 Compliant Contains Lead 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant Surface Mount -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 255W 10 ns 600V 255W Tc 31A SWITCHING 60 ns SILICON N-Channel 105m Ω @ 18A, 10V 3.5V @ 1.2mA 2800pF @ 100V 80nC @ 10V 5ns 20V 31A Tc 800 mJ 10V ±20V
    IPI60R099CPXKSA1 IPI60R099CPXKSA1 Infineon Technologies $0.00
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    		 download 8 Weeks Tube 2008 CoolMOS™ yes Not For New Designs 1 (Unlimited) 3 ROHS3 Compliant TO-262-3 Long Leads, I2Pak, TO-262AA Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSIP-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE 255W Tc SWITCHING 0.099Ohm 600V SILICON N-Channel 99m Ω @ 18A, 10V 3.5V @ 1.2mA 2800pF @ 100V 80nC @ 10V 31A 31A Tc 600V 93A 800 mJ 10V ±20V
    IPW60R125CPFKSA1 IPW60R125CPFKSA1 Infineon Technologies $0.00
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    		 download Through Hole Tube 2011 CoolMOS™ yes Not For New Designs 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 25A 3 TO-247-3 Through Hole -55°C~150°C TJ 600V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE 208W 15 ns 600V 208W Tc 25A SWITCHING 50 ns SILICON N-Channel 125m Ω @ 16A, 10V 3.5V @ 1.1mA 2500pF @ 100V 70nC @ 10V 5ns 20V 25A Tc 82A 708 mJ 10V ±20V
    AUIRFP4004 AUIRFP4004 Infineon Technologies $0.00
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    		 download 16 Weeks Through Hole Tube 2008 HEXFET® Active 1 (Unlimited) 3 EAR99 15.87mm ROHS3 Compliant No 3 ULTRA-LOW RESISTANCE TO-247-3 No SVHC 20.7mm 5.31mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-247AC DRAIN Single 380W 59 ns 2V 380W Tc 195A SWITCHING 160 ns SILICON N-Channel 1.7m Ω @ 195A, 10V 4V @ 250μA 8920pF @ 25V 330nC @ 10V 370ns 190 ns 20V 40V 195A Tc 290 mJ 10V ±20V
    IPW60R045CPAFKSA1 IPW60R045CPAFKSA1 Infineon Technologies $0.00
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    		 download 18 Weeks Through Hole Tube 2010 Automotive, AEC-Q101, CoolMOS™ yes Active 1 (Unlimited) 3 ROHS3 Compliant Lead Free TO-247-3 25.4mm Through Hole -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 R-PSFM-T3 1 Not Qualified 1 SINGLE WITH BUILT-IN DIODE 431W 30 ns 600V 431W Tc 60A 150°C SWITCHING 0.045Ohm 100 ns SILICON N-Channel 45m Ω @ 44A, 10V 3.5V @ 3mA 6800pF @ 100V 190nC @ 10V 20ns 10 ns 20V 600V 60A Tc 230A 10V ±20V
    IPA65R065C7XKSA1 IPA65R065C7XKSA1 Infineon Technologies $0.00
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    		 download 18 Weeks Through Hole Tube 2005 CoolMOS™ C7 Active 1 (Unlimited) 3 ROHS3 Compliant Lead Free 3 TO-220-3 Full Pack Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED Halogen Free 17 ns 650V 34W Tc 15A SWITCHING 0.065Ohm 72 ns SILICON N-Channel 65m Ω @ 17.1A, 10V 4V @ 850μA 3020pF @ 400V 64nC @ 10V 14ns 7 ns 20V 19A 15A Tc 145A 171 mJ 10V ±20V
    IPF05N03LA G IPF05N03LA G Infineon Technologies $0.00
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    		 download Tape & Reel (TR) 2008 OptiMOS™ Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant LOGIC LEVEL COMPATIBLE TO-252-3, DPak (2 Leads + Tab), SC-63 compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN SINGLE GULL WING 260 NOT SPECIFIED 4 YES R-PSSO-G3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE 94W Tc SWITCHING 0.0084Ohm 25V SILICON N-Channel 5.1m Ω @ 30A, 10V 2V @ 50μA 3110pF @ 15V 25nC @ 5V 50A 50A Tc 25V 350A 300 mJ 4.5V 10V ±20V
    IRLR7843TR IRLR7843TR Infineon Technologies $0.00
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    		 download Tape & Reel (TR) 2003 HEXFET® Obsolete 1 (Unlimited) 2 EAR99 Non-RoHS Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 140W Tc SWITCHING 0.0033Ohm 30V SILICON N-Channel 3.3m Ω @ 15A, 10V 2.3V @ 250μA 4380pF @ 15V 50nC @ 4.5V 30A 161A Tc 30V 620A 1440 mJ 4.5V 10V ±20V
    IRF7413PBF IRF7413PBF Infineon Technologies $0.00
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    		 download 14 Weeks Tube 2004 HEXFET® Discontinued 1 (Unlimited) 8 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE 8-SOIC (0.154, 3.90mm Width) Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING 260 30 YES R-PDSO-G8 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE MS-012AA 2.5W Ta SWITCHING 0.011Ohm 30V SILICON N-Channel 11m Ω @ 7.3A, 10V 3V @ 250μA 1800pF @ 25V 79nC @ 10V 13A 13A Ta 30V 58A 260 mJ 4.5V 10V ±20V
    IRF7463PBF IRF7463PBF Infineon Technologies $0.00
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    		 download Tube 2004 HEXFET® Discontinued 1 (Unlimited) 8 EAR99 ROHS3 Compliant 8-SOIC (0.154, 3.90mm Width) Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PDSO-G8 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE MS-012AA 2.5W Ta SWITCHING 0.008Ohm 30V SILICON N-Channel 8m Ω @ 14A, 10V 2V @ 250μA 3150pF @ 15V 51nC @ 4.5V 14A 14A Ta 30V 110A 320 mJ 2.7V 10V ±12V
    IRF7420PBF IRF7420PBF Infineon Technologies $0.00
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    		 download Surface Mount Tube 2004 HEXFET® Discontinued 1 (Unlimited) 4.9784mm ROHS3 Compliant Lead Free Tin -11.5A No 8 8-SOIC (0.154, 3.90mm Width) No SVHC 1.4986mm 3.9878mm 14MOhm Surface Mount -55°C~150°C TJ -12V MOSFET (Metal Oxide) 1 Single 2.5W 8.8 ns -900mV 2.5W Ta -11.5A 291 ns P-Channel 14m Ω @ 11.5A, 4.5V 900mV @ 250μA 3529pF @ 10V 38nC @ 4.5V 8.8ns 225 ns 8V -12V -12V -900 mV 11.5A Tc 12V 1.8V 4.5V ±8V
    IRF7834PBF IRF7834PBF Infineon Technologies $0.00
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    		 download 15 Weeks Surface Mount Tube 2004 HEXFET® Discontinued 1 (Unlimited) 8 EAR99 4.9784mm ROHS3 Compliant Lead Free 19A No 8 8-SOIC (0.154, 3.90mm Width) No SVHC 1.4986mm 3.9878mm Surface Mount -55°C~150°C TJ 30V MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL GULL WING FET General Purpose Power 1 Single 2.5W 13.7 ns 2.5W Ta 19A SWITCHING 0.0045Ohm 18 ns SILICON N-Channel 4.5m Ω @ 19A, 10V 2.25V @ 250μA 3710pF @ 15V 44nC @ 4.5V 14.3ns 5 ns 20V 30V 2.25 V 19A Ta 25 mJ 4.5V 10V ±20V
    IRF7842PBF IRF7842PBF Infineon Technologies $0.00
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    		 download Tube 2004 HEXFET® Discontinued 1 (Unlimited) EAR99 ROHS3 Compliant 8-SOIC (0.154, 3.90mm Width) Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 2.5W Ta N-Channel 5m Ω @ 17A, 10V 2.25V @ 250μA 4500pF @ 20V 50nC @ 4.5V 18A Ta 40V 4.5V 10V ±20V
    IRF7831PBF IRF7831PBF Infineon Technologies $0.00
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    		 download 14 Weeks Tube 2005 HEXFET® Discontinued 1 (Unlimited) 8 ROHS3 Compliant 8-SOIC (0.154, 3.90mm Width) Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PDSO-G8 1 SINGLE WITH BUILT-IN DIODE MS-012AA 2.5W Ta SWITCHING 0.0036Ohm 30V SILICON N-Channel 3.6m Ω @ 20A, 10V 2.35V @ 250μA 6240pF @ 15V 60nC @ 4.5V 21A 21A Ta 30V 170A 100 mJ 4.5V 10V ±12V
    IRF8113PBF IRF8113PBF Infineon Technologies $0.00
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    		 download Tube 2005 HEXFET® Discontinued 1 (Unlimited) 8 EAR99 ROHS3 Compliant 8-SOIC (0.154, 3.90mm Width) Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PDSO-G8 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE MS-012AA 2.5W Ta SWITCHING 0.0056Ohm 30V SILICON N-Channel 5.6m Ω @ 17.2A, 10V 2.2V @ 250μA 2910pF @ 15V 36nC @ 4.5V 17.2A 17.2A Ta 30V 135A 48 mJ 4.5V 10V ±20V
    IRFR220NPBF IRFR220NPBF Infineon Technologies $0.00
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    		 download Tube 2000 HEXFET® Discontinued 1 (Unlimited) EAR99 ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 43W Tc N-Channel 600m Ω @ 2.9A, 10V 4V @ 250μA 300pF @ 25V 23nC @ 10V 5A Tc 200V 10V ±20V
    IRFR3709ZPBF IRFR3709ZPBF Infineon Technologies $0.00
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    		 download Tube 2003 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 79W Tc SWITCHING 0.0065Ohm 30V SILICON N-Channel 6.5m Ω @ 15A, 10V 2.25V @ 250μA 2330pF @ 15V 26nC @ 4.5V 30A 86A Tc 30V 340A 100 mJ 4.5V 10V ±20V
    IRFR4105PBF IRFR4105PBF Infineon Technologies $0.00
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    		 download Tube 1998 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, ULTRA-LOW RESISTANCE TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 68W Tc SWITCHING 0.045Ohm 55V SILICON N-Channel 45m Ω @ 16A, 10V 4V @ 250μA 700pF @ 25V 34nC @ 10V 20A 27A Tc 55V 100A 65 mJ 10V ±20V
    IRFR5305PBF IRFR5305PBF Infineon Technologies $0.00
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    		 download Tube 2000 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.95 e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PSSO-G2 Other Transistors Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 110W Tc SWITCHING 0.065Ohm 55V SILICON P-Channel 65m Ω @ 16A, 10V 4V @ 250μA 1200pF @ 25V 63nC @ 10V 31A 31A Tc 55V 110A 280 mJ 10V ±20V
    IRFR5505PBF IRFR5505PBF Infineon Technologies $0.00
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    		 download Tube 1997 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 Other Transistors Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 57W Tc SWITCHING 0.11Ohm 55V SILICON P-Channel 110m Ω @ 9.6A, 10V 4V @ 250μA 650pF @ 25V 32nC @ 10V 18A 18A Tc 55V 64A 150 mJ 10V ±20V
    IRFR024NPBF IRFR024NPBF Infineon Technologies $0.00
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    		 download Tube 1998 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, ULTRA LOW RESISTANCE TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 45W Tc SWITCHING 0.075Ohm 55V SILICON N-Channel 75m Ω @ 10A, 10V 4V @ 250μA 370pF @ 25V 20nC @ 10V 17A 17A Tc 55V 68A 71 mJ 10V ±20V
    IRFR9120NPBF IRFR9120NPBF Infineon Technologies $0.00
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    		 download 20 Weeks Tube 1998 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.95 e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 Other Transistors Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 40W Tc SWITCHING 0.48Ohm 100V SILICON P-Channel 480m Ω @ 3.9A, 10V 4V @ 250μA 350pF @ 25V 27nC @ 10V 6.6A 6.6A Tc 100V 26A 100 mJ 10V ±20V