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    Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode Current JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Reference Standard Voltage Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Polarity/Channel Type Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Reverse Recovery Time Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min FET Technology Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Drive Voltage (Max Rds On,Min Rds On) Vgs (Max)
    IRFR3410TRLPBF IRFR3410TRLPBF Infineon Technologies $0.00
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    		 download 12 Weeks Tape & Reel (TR) 2004 HEXFET® Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 3W Ta 110W Tc SWITCHING 0.039Ohm 100V SILICON N-Channel 39m Ω @ 18A, 10V 4V @ 250μA 1690pF @ 25V 56nC @ 10V 30A 31A Tc 100V 125A 140 mJ 10V ±20V
    IPD50R500CEAUMA1 IPD50R500CEAUMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Surface Mount Tape & Reel (TR) 2005 CoolMOS™ yes Active 3 (168 Hours) 2 EAR99 ROHS3 Compliant Contains Lead TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 500V 57W Tc SWITCHING 0.5Ohm SILICON N-Channel 500m Ω @ 2.3A, 13V 3.5V @ 200μA 433pF @ 100V 18.7nC @ 10V 7.6A Tc 550V 24A 129 mJ 13V ±20V
    IPD60R950C6ATMA1 IPD60R950C6ATMA1 Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2008 CoolMOS™ C6 Not For New Designs 1 (Unlimited) 2 ROHS3 Compliant Lead Free 3 TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount 3.949996g -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 1 DRAIN Single 37W 10 ns 600V 37W Tc 4.4A SWITCHING 0.95Ohm 60 ns SILICON N-Channel 950m Ω @ 1.5A, 10V 3.5V @ 130μA 280pF @ 100V 13nC @ 10V 8ns 13 ns 30V 600V 4.4A Tc 46 mJ 10V ±20V
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2010 HEXFET® Active 1 (Unlimited) 2 EAR99 10.668mm ROHS3 Compliant Contains Lead, Lead Free 9.3A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.826mm 9.65mm 300mOhm Surface Mount -55°C~175°C TJ 200V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 82W 7.9 ns 82W Tc 9.3A SWITCHING 27 ns SILICON N-Channel 300m Ω @ 5.4A, 10V 4V @ 250μA 575pF @ 25V 35nC @ 10V 14ns 15 ns 20V 200V 4 V 9.3A Tc 94 mJ 10V ±20V
    BSP300H6327XUSA1 BSP300H6327XUSA1 Infineon Technologies $0.00
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    		 download 10 Weeks Surface Mount Cut Tape (CT) 2008 SIPMOS® yes Last Time Buy 3 (168 Hours) 4 EAR99 6.5mm ROHS3 Compliant Lead Free 4 AVALANCHE RATED TO-261-4, TO-261AA 1.6mm 3.5mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 2A e3 Tin (Sn) DUAL GULL WING NOT SPECIFIED NOT SPECIFIED 4 800V 1 DRAIN Halogen Free Single 1.8W 7 ns 800V 1.8W Ta 190mA 27 ns SILICON N-Channel 20 Ω @ 190mA, 10V 4V @ 1mA 230pF @ 25V 16ns 21 ns 20V 800V 190mA Ta 36 mJ 10V ±20V
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2006 HEXFET® Active 1 (Unlimited) 8 EAR99 4.9784mm ROHS3 Compliant Lead Free -11.5A No 8 ULTRA LOW RESISTANCE 8-SOIC (0.154, 3.90mm Width) No SVHC 1.4986mm 3.9878mm 14MOhm Surface Mount -55°C~150°C TJ -12V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING 260 30 Other Transistors 1 Single 2.5W 8.8 ns 2.5W Ta 11.5mA SWITCHING 291 ns SILICON P-Channel 14m Ω @ 11.5A, 4.5V 900mV @ 250μA 3529pF @ 10V 38nC @ 4.5V 8.8ns 225 ns 8V -12V -900 mV 11.5A Tc 12V 46A 1.8V 4.5V ±8V
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    		 download 14 Weeks Tape & Reel (TR) 2003 HEXFET® Obsolete 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 120W Tc SWITCHING 0.028Ohm 80V SILICON N-Channel 28m Ω @ 23A, 10V 2.5V @ 250μA 1890pF @ 25V 33nC @ 4.5V 30A 30A Tc 80V 150A 250 mJ 4.5V 10V ±16V
    IPB037N06N3GATMA1 IPB037N06N3GATMA1 Infineon Technologies $0.00
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    		 download 13 Weeks Surface Mount Tape & Reel (TR) 2008 OptiMOS™ no Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead 3 AVALANCHE RATED TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 188W 30 ns 3V 60V 188W Tc 90A SWITCHING 40 ns SILICON N-Channel 3.7m Ω @ 90A, 10V 4V @ 90μA 11000pF @ 30V 98nC @ 10V 70ns 5 ns 20V 90A Tc 10V ±20V
    IRF1010EZSTRLP IRF1010EZSTRLP Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2002 HEXFET® yes Active 1 (Unlimited) ROHS3 Compliant Lead Free No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 8.5MOhm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 1 Single 140W 19 ns 140W Tc 75A 38 ns N-Channel 8.5m Ω @ 51A, 10V 4V @ 100μA 2810pF @ 25V 86nC @ 10V 90ns 54 ns 20V 60V 75A Tc 10V ±20V
    IRFR7740TRPBF IRFR7740TRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2004 HEXFET® Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Lead Free 3 TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC not_compliant Surface Mount 3.949996g -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 1 TO-252AA DRAIN Single 10 ns 3.7V 140W Tc 87A SWITCHING 0.0072Ohm 75V 55 ns SILICON N-Channel 7.2m Ω @ 52A, 10V 3.7V @ 100μA 4430pF @ 25V 126nC @ 10V 36ns 30 ns 20V 87A Tc 75V 242 mJ 6V 10V ±20V
    IPD65R950CFDATMA1 IPD65R950CFDATMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Surface Mount Tape & Reel (TR) 2006 CoolMOS™ Active 1 (Unlimited) 2 ROHS3 Compliant 3 HIGH RELIABILITY TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 9 ns 650V 36.7W Tc 3.9A SWITCHING 0.95Ohm 43 ns SILICON N-Channel 950m Ω @ 1.5A, 10V 4.5V @ 200μA 380pF @ 100V 14.1nC @ 10V 6.5ns 13.8 ns 20V 700V 3.9A Tc 11A 50 mJ 10V ±20V
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2009 Automotive, AEC-Q101, OptiMOS™ yes Active 1 (Unlimited) 2 6.5mm ROHS3 Compliant Tin 3 TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant 2.3mm 6.22mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 DRAIN Halogen Free Single 15 ns 60V 71W Tc 50A 0.009Ohm 20 ns SILICON N-Channel 9m Ω @ 50A, 10V 4V @ 34μA 3785pF @ 25V 47.1nC @ 10V 40ns 5 ns 20V 50A Tc 200A 87 mJ 10V ±20V
    IPD65R950C6ATMA1 IPD65R950C6ATMA1 Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2008 CoolMOS™ C6 Not For New Designs 1 (Unlimited) 2 ROHS3 Compliant Contains Lead, Lead Free 3 TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount 3.949996g -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 1 Halogen Free Single 37W 6.6 ns 650V 37W Tc 4.5A SWITCHING 0.95Ohm 41 ns SILICON N-Channel 950m Ω @ 1.5A, 10V 3.5V @ 200μA 328pF @ 100V 15.3nC @ 10V 5.2ns 13.6 ns 20V 650V 4.5A Tc 50 mJ 10V ±20V
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    		 download 18 Weeks Surface Mount Tape & Reel (TR) 2009 OptiMOS™ Active 3 (168 Hours) 8 EAR99 ROHS3 Compliant Tin 8 8-SOIC (0.154, 3.90mm Width) Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 DUAL GULL WING NOT SPECIFIED NOT SPECIFIED 1 SINGLE WITH BUILT-IN DIODE 1.56W 1.56W Ta 16A SWITCHING 0.004Ohm 30V SILICON N-Channel 4m Ω @ 20A, 10V 2V @ 250μA 5700pF @ 15V 73nC @ 10V 9ns 20V 16A Ta 30V 4.5V 10V ±20V
    IRFR6215TRRPBF IRFR6215TRRPBF Infineon Technologies $0.00
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    		 download Tape & Reel (TR) 2004 HEXFET® Not For New Designs 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 Other Transistors Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 110W Tc SWITCHING 0.295Ohm 150V SILICON P-Channel 295m Ω @ 6.6A, 10V 4V @ 250μA 860pF @ 25V 66nC @ 10V 13A 13A Tc 150V 44A 310 mJ 10V ±20V
    IRL3103STRLPBF IRL3103STRLPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2004 HEXFET® Not For New Designs 1 (Unlimited) 2 EAR99 10.668mm ROHS3 Compliant Contains Lead Tin 64A No 3 AVALANCHE RATED TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 4.826mm 9.65mm 12MOhm Surface Mount -55°C~175°C TJ 30V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 1 DRAIN Single 110W 8.9 ns 94W Tc 64A SWITCHING 14 ns SILICON N-Channel 12m Ω @ 34A, 10V 1V @ 250μA 1650pF @ 25V 33nC @ 4.5V 120ns 9.1 ns 16V 30V 64A Tc 220A 4.5V 10V ±16V
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2009 HEXFET® Active 1 (Unlimited) 3 SMD/SMT EAR99 5.2324mm ROHS3 Compliant No 8 8-PowerTDFN No SVHC 1.1684mm 6.1468mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL R-PDSO-N3 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.1W 12 ns 3.1W Ta 24A SWITCHING 0.0035Ohm 14 ns SILICON N-Channel 3.5m Ω @ 24A, 10V 2.35V @ 50μA 3100pF @ 15V 30nC @ 4.5V 16ns 7.5 ns 20V 30V 30V 1.8 V 76A 24A Ta 76A Tc 190A 97 mJ 4.5V 10V ±20V
    IPG20N04S409ATMA1 IPG20N04S409ATMA1 Infineon Technologies $0.00
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    		 download 12 Weeks Tape & Reel (TR) 2010 Active 1 (Unlimited) 8 EAR99 ROHS3 Compliant not_compliant ENHANCEMENT MODE DUAL FLAT NOT SPECIFIED NOT SPECIFIED YES R-PDSO-F8 AEC-Q101 2 SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE N-CHANNEL 0.0086Ohm 40V METAL-OXIDE SEMICONDUCTOR SILICON 20A 80A 145 mJ
    BSZ146N10LS5ATMA1 BSZ146N10LS5ATMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Tape & Reel (TR) yes Active 1 (Unlimited) EAR99 ROHS3 Compliant 8-PowerTDFN not_compliant Surface Mount e3 Tin (Sn)
    IRFR1010ZTRLPBF IRFR1010ZTRLPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2010 HEXFET® Active 1 (Unlimited) 2 EAR99 6.7056mm ROHS3 Compliant No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-252-3, DPak (2 Leads + Tab), SC-63 2.3876mm 6.22mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 140W 17 ns 140W Tc 42A SWITCHING 0.0075Ohm 42 ns SILICON N-Channel 7.5m Ω @ 42A, 10V 4V @ 100μA 2840pF @ 25V 95nC @ 10V 76ns 48 ns 20V 55V 42A Tc 220 mJ 10V ±20V
    IRF3710ZSTRLPBF IRF3710ZSTRLPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2003 HEXFET® Active 1 (Unlimited) 2 SMD/SMT EAR99 10.668mm ROHS3 Compliant Lead Free 59A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 5.084mm 9.65mm 18MOhm Surface Mount -55°C~175°C TJ 100V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 1 FET General Purpose Power 1 DRAIN Single 160W 17 ns 4V 50 ns 160W Tc 75 ns 59A 175°C SWITCHING 41 ns SILICON N-Channel 18m Ω @ 35A, 10V 4V @ 250μA 2900pF @ 25V 120nC @ 10V 77ns 56 ns 20V 100V 100V 4 V 59A Tc 240A 200 mJ 10V ±20V
    BSC034N06NSATMA1 BSC034N06NSATMA1 Infineon Technologies $0.00
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    		 download 26 Weeks Surface Mount Tape & Reel (TR) 2012 OptiMOS™ Active 1 (Unlimited) 5 EAR99 ROHS3 Compliant Contains Lead 8 8-PowerTDFN not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) DUAL FLAT NOT SPECIFIED NOT SPECIFIED R-PDSO-F5 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 2.5W 60V 2.5W Ta 74W Tc 100A SWITCHING 0.0034Ohm SILICON N-Channel 3.4m Ω @ 50A, 10V 3.3V @ 41μA 3000pF @ 30V 41nC @ 10V 5ns 20V 100A Tc 400A 6V 10V ±20V
    IRL3803STRLPBF IRL3803STRLPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2002 HEXFET® Active 1 (Unlimited) 2 SMD/SMT EAR99 10.668mm ROHS3 Compliant Contains Lead, Lead Free Tin 140A No 3 AVALANCHE RATED, LOGIC LEVEL COMPATIBLE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.826mm 9.65mm 6mOhm Surface Mount -55°C~175°C TJ 30V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 200W 14 ns 1V 3.8W Ta 200W Tc 180 ns 140A SWITCHING 29 ns SILICON N-Channel 6m Ω @ 71A, 10V 1V @ 250μA 5000pF @ 25V 140nC @ 4.5V 230ns 35 ns 16V 30V 30V 1 V 140A Tc 470A 4.5V 10V ±16V
    IRF6662TRPBF IRF6662TRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2006 HEXFET® Active 1 (Unlimited) 3 EAR99 6.35mm ROHS3 Compliant Lead Free 8.3A No 7 DirectFET™ Isometric MZ 506μm 5.05mm 31MOhm Surface Mount -40°C~150°C TJ 100V MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) BOTTOM R-XBCC-N3 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 89W 11 ns 2.8W Ta 89W Tc 6.6A SWITCHING 24 ns SILICON N-Channel 22m Ω @ 8.2A, 10V 4.9V @ 100μA 1360pF @ 25V 31nC @ 10V 7.5ns 5.9 ns 20V 100V 8.3A Ta 47A Tc 66A 39 mJ 10V ±20V
    IRF3415STRLPBF IRF3415STRLPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 1998 HEXFET® Active 1 (Unlimited) 2 SMD/SMT EAR99 10.668mm ROHS3 Compliant Contains Lead, Lead Free 43A No 3 AVALANCHE RATED, HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.826mm 9.65mm 4.2MOhm Surface Mount -55°C~175°C TJ 150V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 1 DRAIN Single 3.8W 12 ns 4V 3.8W Ta 200W Tc 390 ns 43A SWITCHING 71 ns SILICON N-Channel 42m Ω @ 22A, 10V 4V @ 250μA 2400pF @ 25V 200nC @ 10V 55ns 69 ns 20V 150V 150V 4 V 43A Tc 590 mJ 10V ±20V
    BSC014N03LSGATMA1 BSC014N03LSGATMA1 Infineon Technologies $0.00
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    		 download 3 Weeks Surface Mount Tape & Reel (TR) 2006 OptiMOS™ no Not For New Designs 1 (Unlimited) 5 EAR99 ROHS3 Compliant Contains Lead 8 AVALANCHE RATED, LOGIC LEVEL COMPATIBLE 8-PowerTDFN not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) DUAL FLAT NOT SPECIFIED NOT SPECIFIED 8 R-PDSO-F5 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 139W 13 ns 30V 2.5W Ta 139W Tc 34A SWITCHING 0.0021Ohm 51 ns SILICON N-Channel 1.4m Ω @ 30A, 10V 2.2V @ 250μA 10000pF @ 15V 131nC @ 10V 8.6ns 20V 34A Ta 100A Tc 400A 290 mJ 4.5V 10V ±20V
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2007 HEXFET® Active 1 (Unlimited) 3 EAR99 6.35mm ROHS3 Compliant Lead Free No 5 DirectFET™ Isometric MT No SVHC 506μm 5.05mm Surface Mount -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) BOTTOM 260 30 R-XBCC-N3 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 89W 20 ns 2.8W Ta 89W Tc 180A SWITCHING 0.0017Ohm 25 ns SILICON N-Channel 1.7m Ω @ 32A, 10V 2.35V @ 150μA 6140pF @ 15V 77nC @ 4.5V 30ns 17 ns 20V 30V 1.7 V 32A 32A Ta 180A Tc 260 mJ 4.5V 10V ±20V
    IRF1010ESTRLPBF IRF1010ESTRLPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2002 HEXFET® Active 1 (Unlimited) 2 EAR99 10.668mm ROHS3 Compliant Contains Lead, Lead Free Tin 84A No 3 AVALANCHE RATED, HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Unknown 4.826mm 9.65mm 12mOhm Surface Mount -55°C~175°C TJ 60V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 170W 12 ns 200W Tc 84A SWITCHING 48 ns SILICON N-Channel 12m Ω @ 50A, 10V 4V @ 250μA 3210pF @ 25V 130nC @ 10V 78ns 53 ns 20V 60V 4 V 75A 84A Tc 10V ±20V
    BSC042NE7NS3GATMA1 BSC042NE7NS3GATMA1 Infineon Technologies $0.00
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    		 download 13 Weeks Surface Mount Tape & Reel (TR) 2011 OptiMOS™ no Active 1 (Unlimited) 5 EAR99 ROHS3 Compliant Contains Lead 8 8-PowerTDFN not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) DUAL FLAT 8 R-PDSO-F5 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 2.5W 14 ns 75V 2.5W Ta 125W Tc 19A SWITCHING 0.0042Ohm 34 ns SILICON N-Channel 4.2m Ω @ 50A, 10V 3.8V @ 91μA 4800pF @ 37.5V 69nC @ 10V 17ns 9 ns 20V 19A Ta 100A Tc 400A 220 mJ 10V ±20V
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    		 download 15 Weeks Surface Mount Tape & Reel (TR) 2006 HEXFET® Not For New Designs 1 (Unlimited) 2 EAR99 10.668mm ROHS3 Compliant Lead Free No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 4.572mm 9.65mm 6.3MOhm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 200W 26 ns 200W Tc 120A SWITCHING 51 ns SILICON N-Channel 6.3m Ω @ 75A, 10V 4V @ 150μA 5150pF @ 50V 180nC @ 10V 120ns 63 ns 20V 75V 75A 120A Tc 270 mJ 10V ±20V