Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Resistance | Mounting Type | Operating Temperature | Technology | Operating Mode | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | Surface Mount | JESD-30 Code | Subcategory | Qualification Status | Max Power Dissipation | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Halogen Free | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Max Dual Supply Voltage | Power Dissipation-Max | Recovery Time | Continuous Drain Current (ID) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | FET Feature | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IRF8306MTRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2007 | HEXFET® | Obsolete | 1 (Unlimited) | EAR99 | RoHS Compliant | Lead Free | No | 7 | DirectFET™ Isometric MX | Surface Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | FET General Purpose Power | 1 | Single | 75W | 16 ns | 2.1W Ta 75W Tc | 23A | 19 ns | N-Channel | 2.5m Ω @ 23A, 10V | 2.35V @ 100μA | 4110pF @ 15V | 38nC @ 4.5V | 34ns | 19 ns | 20V | 30V | Schottky Diode (Body) | 23A Ta 140A Tc | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
IRFHM831TR2PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Cut Tape (CT) | 2013 | HEXFET® | Obsolete | 1 (Unlimited) | 5 | EAR99 | 150°C | -55°C | 3.2766mm | RoHS Compliant | No | 8 | 8-PowerTDFN | No SVHC | 990.6μm | 3.3mm | Surface Mount | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | S-PDSO-N5 | 2.5W | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 2.5W | 6.9 ns | 22 ns | 14A | SWITCHING | 6.2 ns | N-Channel | 7.8m Ω @ 12A, 10V | 2.35V @ 25μA | 1050pF @ 25V | 16nC @ 10V | 12ns | 4.7 ns | 20V | 30V | 1.8 V | 14A Ta 40A Tc | 96A | 50 mJ | |||||||||||||||||||||||||||||||||||||
IPA60R450E6XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2008 | CoolMOS™ | yes | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | Lead Free | 3 | TO-220-3 Full Pack | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | Halogen Free | 30W | 11 ns | 600V | 30W Tc | 9.2A | SWITCHING | 0.45Ohm | 70 ns | SILICON | N-Channel | 450m Ω @ 3.4A, 10V | 3.5V @ 280μA | 620pF @ 100V | 28nC @ 10V | 9ns | 10 ns | 20V | 9.2A Tc | 26A | 10V | ±20V | |||||||||||||||||||||||||||||||||
IPP65R600E6XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2011 | CoolMOS™ | yes | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | Lead Free | TO-220-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSFM-T3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | Halogen Free | 63W | 10 ns | 650V | 63W Tc | 7.3A | SWITCHING | 0.6Ohm | 64 ns | SILICON | N-Channel | 600m Ω @ 2.1A, 10V | 3.5V @ 210μA | 440pF @ 100V | 23nC @ 10V | 8ns | 11 ns | 20V | 7.3A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
IPD60R750E6BTMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 2017 | CoolMOS™ | no | Discontinued | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | YES | R-PSSO-G2 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 48W Tc | SWITCHING | 0.75Ohm | 600V | SILICON | N-Channel | 750m Ω @ 2A, 10V | 3.5V @ 170μA | 373pF @ 100V | 17.2nC @ 10V | 5.7A Tc | 600V | 15.7A | 72 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
AUIRF3710Z | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Through Hole | Tube | 2010 | HEXFET® | Obsolete | 1 (Unlimited) | 3 | EAR99 | 10.6426mm | RoHS Compliant | No | 3 | TO-220-3 | No SVHC | 9.017mm | 4.82mm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | FET General Purpose Power | 1 | TO-220AB | Single | 160W | 17 ns | 2V | 160W Tc | 59A | SWITCHING | 41 ns | SILICON | N-Channel | 18m Ω @ 35A, 10V | 4V @ 250μA | 2900pF @ 25V | 120nC @ 10V | 77ns | 56 ns | 20V | 100V | 2 V | 59A Tc | 240A | 200 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||
AUIRF1010EZS | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tube | 2010 | HEXFET® | Discontinued | 1 (Unlimited) | 2 | EAR99 | 10.67mm | ROHS3 Compliant | Tin | No | 3 | ULTRA-LOW RESISTANCE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.83mm | 9.65mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 260 | 30 | R-PDSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 140W | 19 ns | 2V | 140W Tc | 75A | SWITCHING | 0.0085Ohm | 38 ns | SILICON | N-Channel | 8.5m Ω @ 51A, 10V | 4V @ 250μA | 2810pF @ 25V | 86nC @ 10V | 90ns | 54 ns | 20V | 60V | 75A Tc | 10V | ±20V | |||||||||||||||||||||||||||||
AUIRF3205ZS | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tube | 2010 | HEXFET® | Discontinued | 1 (Unlimited) | 2 | EAR99 | 10.67mm | ROHS3 Compliant | Tin | No | 3 | AVALANCHE RATED, ULTRA-LOW RESISTANCE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.83mm | 11.3mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 170W | 18 ns | 2V | 170W Tc | 110A | SWITCHING | 0.0065Ohm | 45 ns | SILICON | N-Channel | 6.5m Ω @ 66A, 10V | 4V @ 250μA | 3450pF @ 25V | 110nC @ 10V | 95ns | 67 ns | 20V | 55V | 75A | 75A Tc | 440A | 250 mJ | 10V | ±20V | |||||||||||||||||||||||||||
AUIRFP2907Z | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Through Hole | Tube | 2010 | HEXFET® | Obsolete | 1 (Unlimited) | 3 | EAR99 | 15.87mm | RoHS Compliant | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | TO-247-3 | No SVHC | 20.7mm | 5.31mm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | FET General Purpose Power | 1 | TO-247AC | DRAIN | Single | 310W | 19 ns | 2V | 310W Tc | 170A | SWITCHING | 0.0045Ohm | 97 ns | SILICON | N-Channel | 4.5m Ω @ 90A, 10V | 4V @ 250μA | 7500pF @ 25V | 270nC @ 10V | 140ns | 100 ns | 20V | 75V | 170A Tc | 680A | 690 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||
AUIRLR024NTRL | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Tape & Reel (TR) | 2015 | HEXFET® | Obsolete | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | YES | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 45W Tc | SWITCHING | 0.08Ohm | 55V | SILICON | N-Channel | 65m Ω @ 10A, 10V | 2V @ 250μA | 480pF @ 25V | 15nC @ 5V | 17A | 17A Tc | 55V | 72A | 68 mJ | 4V 10V | ±16V | |||||||||||||||||||||||||||||||||||||
IRF9392TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 17 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | HEXFET® | Obsolete | 1 (Unlimited) | 8 | EAR99 | ROHS3 Compliant | No | 8 | 8-SOIC (0.154, 3.90mm Width) | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | Other Transistors | 1 | Single | 2.5W | 15 ns | 2.5W Ta | 9.8A | SWITCHING | 73 ns | SILICON | P-Channel | 12.1m Ω @ 7.8A, 20V | 2.4V @ 25μA | 1270pF @ 25V | 14nC @ 4.5V | 47ns | 58 ns | 25V | -30V | 9.8A Ta | 30V | 10V 20V | ±25V | |||||||||||||||||||||||||||||||||||||||
AUIRLR3705Z | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Surface Mount | Tube | 2004 | HEXFET® | Discontinued | 1 (Unlimited) | 2 | EAR99 | 6.73mm | ROHS3 Compliant | Lead Free | Tin | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.39mm | 6.22mm | 8Ohm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | TO-252AA | DRAIN | Single | 130W | 17 ns | 130W Tc | 42A | SWITCHING | 33 ns | SILICON | N-Channel | 8m Ω @ 42A, 10V | 3V @ 250μA | 2900pF @ 25V | 66nC @ 5V | 150ns | 70 ns | 16V | 55V | 89A | 42A Tc | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||
IRF9332PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2006 | HEXFET® | Discontinued | 1 (Unlimited) | 8 | EAR99 | 5mm | ROHS3 Compliant | Lead Free | No | 8 | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.5mm | 4mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | GULL WING | Other Transistors | 1 | Single | 2.5W | 15 ns | -1.9V | 2.5W Ta | 54 ns | 9.8A | SWITCHING | 73 ns | SILICON | P-Channel | 17.5m Ω @ 9.8A, 10V | 2.4V @ 25μA | 1270pF @ 25V | 41nC @ 10V | 47ns | 58 ns | 20V | -30V | -1.9 V | 9.8A Ta | 30V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
AUIRLR3410 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 39 Weeks | Surface Mount | Tube | 2010 | HEXFET® | Discontinued | 1 (Unlimited) | 2 | EAR99 | 6.7056mm | ROHS3 Compliant | Lead Free | Tin | No | 3 | AVALANCHE RATED, HIGH RELIABILITY | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.3876mm | 6.22mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | TO-252AA | DRAIN | Single | 79W | 7.2 ns | 79W Tc | 17A | SWITCHING | 30 ns | SILICON | N-Channel | 105m Ω @ 10A, 10V | 2V @ 250μA | 800pF @ 25V | 34nC @ 5V | 53ns | 26 ns | 16V | 100V | 17A Tc | 60A | 4V 10V | ±16V | |||||||||||||||||||||||||||||
AUIRFS4310 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2010 | HEXFET® | Discontinued | 1 (Unlimited) | 2 | EAR99 | 10.67mm | ROHS3 Compliant | Tin | No | 3 | AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.83mm | 9.65mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 300W | 26 ns | 2V | 300W Tc | 130A | SWITCHING | 0.007Ohm | 68 ns | SILICON | N-Channel | 7m Ω @ 75A, 10V | 4V @ 250μA | 7670pF @ 50V | 250nC @ 10V | 110ns | 78 ns | 20V | 100V | 2 V | 75A | 75A Tc | 550A | 980 mJ | 10V | ±20V | |||||||||||||||||||||||||||
AUIRFZ44VZS | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2011 | HEXFET® | Discontinued | 1 (Unlimited) | 2 | EAR99 | 10.67mm | ROHS3 Compliant | Tin | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.83mm | 9.65mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 92W | 14 ns | 2V | 92W Tc | 57A | SWITCHING | 35 ns | SILICON | N-Channel | 12m Ω @ 34A, 10V | 4V @ 250μA | 1690pF @ 25V | 65nC @ 10V | 62ns | 38 ns | 20V | 60V | 57A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||
AUIRFR4105Z | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2010 | HEXFET® | Discontinued | 1 (Unlimited) | 2 | EAR99 | 6.73mm | ROHS3 Compliant | Lead Free | Tin | No | 3 | AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.39mm | 6.22mm | 24.5MOhm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | TO-252AA | DRAIN | Single | 48W | 10 ns | 2V | 48W Tc | 30A | SWITCHING | 26 ns | SILICON | N-Channel | 24.5m Ω @ 18A, 10V | 4V @ 250μA | 740pF @ 25V | 27nC @ 10V | 40ns | 24 ns | 20V | 55V | 20A Tc | 29 mJ | 10V | ±20V | ||||||||||||||||||||||||||||
AUIRFR5505 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tube | 2010 | HEXFET® | Obsolete | 1 (Unlimited) | 2 | EAR99 | 6.73mm | ROHS3 Compliant | Tin | No | 3 | AVALANCHE RATED, HIGH RELIABILITY | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.39mm | 6.22mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-PSSO-G2 | Other Transistors | 1 | TO-252AA | DRAIN | Single | 57W | 12 ns | -2V | 57W Tc | 18A | SWITCHING | 20 ns | SILICON | P-Channel | 110m Ω @ 9.6A, 10V | 4V @ 250μA | 650pF @ 25V | 32nC @ 10V | 28ns | 16 ns | 20V | -55V | 18A Tc | 55V | 64A | 10V | ±20V | ||||||||||||||||||||||||||||
AUIRFZ48ZS | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tube | 2011 | HEXFET® | Discontinued | 1 (Unlimited) | 2 | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | Tin | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.83mm | 9.65mm | 8.6MOhm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 91W | 15 ns | 91W Tc | 61A | SWITCHING | 35 ns | SILICON | N-Channel | 11m Ω @ 37A, 10V | 4V @ 250μA | 1720pF @ 25V | 64nC @ 10V | 69ns | 39 ns | 20V | 55V | 61A Tc | 240A | 10V | ±20V | |||||||||||||||||||||||||||||
AUIRLR2905 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 52 Weeks | Surface Mount, Through Hole | Tube | 2006 | HEXFET® | Obsolete | 1 (Unlimited) | 2 | EAR99 | 6.73mm | ROHS3 Compliant | Lead Free | Tin | No | 3 | AVALANCHE RATED | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.39mm | 6.22mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | TO-252AA | DRAIN | Single | 110W | 11 ns | 1V | 110W Tc | 42A | SWITCHING | 26 ns | SILICON | N-Channel | 27m Ω @ 25A, 10V | 2V @ 250μA | 1700pF @ 25V | 48nC @ 5V | 84ns | 15 ns | 16V | 55V | 42A Tc | 4V 10V | ±16V | |||||||||||||||||||||||||||||
IRFH5220TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2010 | HEXFET® | Obsolete | 1 (Unlimited) | 5 | EAR99 | RoHS Compliant | No | 8 | 8-VQFN Exposed Pad | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | R-PDSO-N5 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 3.6W | 7.2 ns | 3.6W Ta 8.3W Tc | 3.8A | SWITCHING | 0.0999Ohm | 14 ns | SILICON | N-Channel | 99.9m Ω @ 5.8A, 10V | 5V @ 100μA | 1380pF @ 50V | 30nC @ 10V | 4.7ns | 3.4 ns | 20V | 200V | 20A | 3.8A Ta 20A Tc | 47A | 290 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
IRF9388PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2005 | HEXFET® | Discontinued | 1 (Unlimited) | 8 | EAR99 | 4.9784mm | ROHS3 Compliant | Lead Free | No | 8 | 8-SOIC (0.154, 3.90mm Width) | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | GULL WING | Other Transistors | 1 | SINGLE WITH BUILT-IN DIODE | 2.5W | 19 ns | 2.5W Ta | 12A | SWITCHING | 80 ns | SILICON | P-Channel | 8.5m Ω @ 12A, 20V | 2.4V @ 25μA | 1680pF @ 25V | 52nC @ 10V | 57ns | 66 ns | 25V | -30V | 12A Ta | 30V | 96A | 10V 20V | ±25V | |||||||||||||||||||||||||||||||||||||||
IRF8788PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2005 | HEXFET® | Discontinued | 1 (Unlimited) | 8 | SMD/SMT | EAR99 | 5mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.5mm | 4mm | 2.8MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | GULL WING | FET General Purpose Power | 1 | Single | 2.5W | 23 ns | 1.8V | 2.5W Ta | 36 ns | 24A | SWITCHING | 23 ns | SILICON | N-Channel | 2.8m Ω @ 24A, 10V | 2.35V @ 100μA | 5720pF @ 15V | 66nC @ 4.5V | 24ns | 11 ns | 20V | 30V | 30V | 1.8 V | 24A Ta | 230 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
IRFH5207TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2010 | HEXFET® | Obsolete | 1 (Unlimited) | 5 | EAR99 | 5.9944mm | RoHS Compliant | Lead Free | Tin | No | 8 | 8-PowerVDFN | 838.2μm | 5mm | 9.6MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | R-PDSO-N5 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 3.6W | 7.2 ns | 3.6W Ta 105W Tc | 71A | SWITCHING | 20 ns | SILICON | N-Channel | 9.6m Ω @ 43A, 10V | 4V @ 100μA | 2474pF @ 25V | 59nC @ 10V | 12ns | 7.1 ns | 20V | 75V | 13A Ta 71A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
IRLR8729PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2008 | HEXFET® | Discontinued | 1 (Unlimited) | 2 | EAR99 | 6.73mm | ROHS3 Compliant | Lead Free | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.39mm | 6.22mm | 8.9MOhm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | TO-252AA | DRAIN | Single | 55W | 10 ns | 55W Tc | 24 ns | 58A | SWITCHING | 11 ns | SILICON | N-Channel | 8.9m Ω @ 25A, 10V | 2.35V @ 25μA | 1350pF @ 15V | 16nC @ 4.5V | 47ns | 10 ns | 20V | 30V | 1.8 V | 50A | 58A Tc | 260A | 74 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||
IRF9393PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2010 | HEXFET® | Discontinued | 1 (Unlimited) | 8 | EAR99 | 5mm | ROHS3 Compliant | No | 8 | 8-SOIC (0.154, 3.90mm Width) | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | GULL WING | Other Transistors | 1 | SINGLE WITH BUILT-IN DIODE | 2.5W | 16 ns | 2.5W Ta | 9.2A | SWITCHING | 55 ns | SILICON | P-Channel | 13.3m Ω @ 9.2A, 20V | 2.4V @ 25μA | 1110pF @ 25V | 38nC @ 10V | 44ns | 49 ns | 25V | -30V | 9.2A Ta | 30V | 75A | 10V 20V | ±25V | ||||||||||||||||||||||||||||||||||||||||
IRFS4010TRRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2008 | HEXFET® | Discontinued | 1 (Unlimited) | 2 | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.826mm | 9.65mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 375W | 21 ns | 375W Tc | 180A | SWITCHING | 0.0047Ohm | 100 ns | SILICON | N-Channel | 4.7m Ω @ 106A, 10V | 4V @ 250μA | 9575pF @ 50V | 215nC @ 10V | 86ns | 77 ns | 20V | 100V | 180A Tc | 720A | 10V | ±20V | ||||||||||||||||||||||||||||||||
IRF1405ZSTRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 15 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | HEXFET® | Obsolete | 1 (Unlimited) | 2 | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.826mm | 9.65mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 230W | 18 ns | 230W Tc | 75A | SWITCHING | 0.0049Ohm | 48 ns | SILICON | N-Channel | 4.9m Ω @ 75A, 10V | 4V @ 250μA | 4780pF @ 25V | 180nC @ 10V | 110ns | 82 ns | 20V | 55V | 75A Tc | 600A | 420 mJ | 10V | ±20V | |||||||||||||||||||||||||||||
IRFR3704ZTRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Obsolete | 1 (Unlimited) | 2 | EAR99 | 6.7056mm | RoHS Compliant | Lead Free | Tin | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.26mm | 6.22mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-PSSO-G2 | 1 | TO-252AA | DRAIN | Single | 48W | 8.4 ns | 48W Tc | 60A | SWITCHING | 0.0084Ohm | 4.9 ns | SILICON | N-Channel | 8.4m Ω @ 15A, 10V | 2.55V @ 250μA | 1190pF @ 10V | 14nC @ 4.5V | 8.9ns | 12 ns | 20V | 20V | 60A Tc | 240A | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
IRL8113STRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Obsolete | 1 (Unlimited) | 2 | EAR99 | 10.668mm | RoHS Compliant | Lead Free | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.699mm | 9.65mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | 1 | DRAIN | Single | 110W | 14 ns | 110W Tc | 105A | SWITCHING | 0.006Ohm | 18 ns | SILICON | N-Channel | 6m Ω @ 21A, 10V | 2.25V @ 250μA | 2840pF @ 15V | 35nC @ 4.5V | 38ns | 5 ns | 20V | 30V | 42A | 105A Tc | 420A | 220 mJ | 4.5V 10V | ±20V |
Products